• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.24-27
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• 2008

ZnO has intensively attracted interest for the next generation of short wavelength LEDs and semiconductor lasers. However, for the development and application of the devices based on this material, the fabrication of p-type ZnO thin films is pivotal. Generally, the process of preparation of ZnO is unavoidably accompanied by the natural donor ions such as interstitial Zn ions and oxygen vacancy ions that show n-type electrical property and make fabrication of p-type ZnO to be a hard problem. On this study, to realize stable high-quality p-type ZnO thin films, the undoped ZnO thin films were diffused with P in vapor state. The ZnO:P thin films showed high-quality p-type properties electrically and optically.

• Transactions on Electrical and Electronic Materials
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• v.1 no.3
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• pp.18-22
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• 2000

In this work, we reported the sulfur compositional variation of ZnS$\_$x/Se$\_$1-x/ epitaxial layers with growth temperature and BEP ration of ZnX/Se/)P$\_$ZnS//P$\_$Se/) grown on GaAs substrates by molecular beam epitaxy. The sulfur composition of ZnSSe epitaxial layers was varied sensitively on the growth temperature and show different linear relationship with growth temperature and BEP ration of ZnS/Se(P$\_$ZnS//P$\_$Se/), which revealed -0.107 %$\^{C}$ at (P$\_$ZnS//P$\_$Se/)=0.30 and -0.052 %$\^{C}$ at (P$\_$ZnS//P$\_$Se/)=0.158 rspectively. A reference data for the accurate control of the sulfur composition and the growth of high quality ZnSSe/GaAs epitaxial layers was provided.

• Asian-Australasian Journal of Animal Sciences
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• v.30 no.7
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• pp.1006-1012
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• 2017

Objective: This study was conducted to investigate effects of zinc (Zn) bearing palygorskite (ZnPal) supplementation on growth performance, hepatic mineral content, and antioxidant status of broilers at early age. Methods: A total of 240 1-day-old Arbor Acres broiler chicks were allocated into 5 treatments with 6 replicates of 8 chicks each. Birds in 5 treatments were fed a basal diet supplemented with 0 (Control group; Analyzed Zn content: 81 mg/kg), 20, 40, 60, and 80 mg/kg Zn as ZnPal for 21 days, respectively. Blood, liver and intestinal mucosa were collected at 21 days of age. Results: Treatments did not affect growth performance of broilers during the 21-day study (p>0.05). The contents of hepatic Zn and magnesium (Mg) were linearly increased (p<0.001) by ZnPal supplementation. ZnPal inclusion linearly (p = 0.007) reduced malondialdehyde (MDA) concentration in serum. The activity of total superoxide dismutase (T-SOD) in liver increased linearly (p = 0.001) with concentration of ZnPal in diet. ZnPal inclusion linearly (p = 0.036) and quadratically (p = 0.005) increased T-SOD activity, and linearly (p = 0.012) increased copper/zinc superoxide dismutase (Cu/Zn SOD) activity in jejunal mucosa. The maximum responses of hepatic and jejunal antioxidant enzymes activities (T-SOD and Cu/Zn SOD) were found when supplementing the basal diet with 60 mg/kg Zn as ZnPal. Furthermore, ZnPal supplementation quadratically (p = 0.001) increased Cu/Zn SOD activity in ileal mucosa, and its maximum activity was observed in the diet supplemented with 20 mg/kg Zn as ZnPal. Conclusion: ZnPal supplementation did not alter growth performance of broilers. Dietary ZnPal inclusion could increase concentrations of hepatic trace minerals (Zn and Mg) and inhibit lipid peroxidation by reducing serum MDA accumulation, with the optimal dosage of Zn from ZnPal being 80 mg/kg diet (analyzed Zn content in the diet: 165 mg/kg), and 60 mg/kg Zn as ZnPal (analyzed Zn content in the diet: 148 mg/kg) was the optimum dosage for broilers to achieve maximum antioxidant enzyme activities.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.34-38
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• 2011

In this study, the effects of an annealed buffer layer with different thickness on heterojunction diodes based on the ZnO/ZnO/p-Si(111) systems were reported. The effects of an annealed buffer layer with different thickness on the structural, optical, and electrical properties of zinc oxide (ZnO) films on p-Si(111) were also studied. Before zinc oxide (ZnO) deposition, different thicknesses of ZnO buffer layer, 10 nm, 30 nm, 50 nm and 70 nm, were grown on p-Si(111) substrates using a radio-frequency sputtering system; samples were subsequently annealed at $700^{\circ}C$ for 10 minutes in $N_2$ in a horizontal thermal furnace. Zinc oxide (ZnO) films with a width of 280nm were also deposited using a radio-frequency sputtering system on the annealed ZnO/p-Si (111) substrates at room temperature; samples were subsequently annealed at $700^{\circ}C$ for 30 minutes in $N_2$. In this experiment, the structural and optical properties of ZnO thin films were studied by XRD (X-ray diffraction), and room temperature PL (photoluminescence) measurements, respectively. Current-voltage (I-V) characteristics were measured with a semiconductor parameter analyzer. The thermal tensile stress was found to decrease with increasing buffer layer thickness. Among the ZnO/ZnO/p-Si(111) diodes fabricated in this study, the sample that was formed with the condition of a 50 nm thick ZnO buffer layer showed a strong c-axis preferred orientation and I-V characteristics suitable for a heterojunction diode.

• Journal of Animal Science and Technology
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• v.44 no.4
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• pp.399-406
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• 2002

An experiment was conducted to investigate the effects of supplemental copper or/and zinc methionine chelates(Cu-Met or/and Zn-Met) on the performance, nutrient digestibility, serum IgG level, gizzard erosion, and the contents of Cu and Zn in liver and excreta of broiler chickens. One thousand d-old broiler chickens (Ross$^{(R)}$) were assigned to 4 treatments: control, 100 ppm Cu in methionine chelate(Cu-Met), 100 ppm Zn in methionine chelate(Zn-Met) and 100 ppm Cu plus 100 ppm Zn in methionine chelate(Cu-Zn-Met). Each treatment had five replications of 50 (25 male + 25 female) birds each. Average weight gains of chicks fed chelated Cu or/and Zn were significantly higher than that of chicks fed the control (P<0.05). Moreover, feed conversion rates of chicks were better in the chicks fed chelated Cu or/and Zn than in the chicks fed the control (P<0.05). The birds fed the chelated Cu and Zn(Cu-Zn-Met) tended to perform the best growth rate and feed conversion rate. Nutrient digestibilities were not affected by the dietary treatments. Serum IgG level of chicks fed Cu-Zn-Met was significantly higher than that of chicks fed the control (P<0.05). Gizzard erosion index was not significantly different among the treatments. The contents of Cu and Zn in liver were not significantly affected by the dietary treatments. The excreta contents of Cu or/and Zn were significantly high in the birds fed supplementary Cu or/and Zn. It was concluded that dietary supplementation of Cu or/and Zn in methionine chelated form improved growth and feed conversion efficiency of broilers.

• Asian-Australasian Journal of Animal Sciences
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• v.10 no.5
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• pp.471-477
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• 1997

A study detennined whether certain biochemical and physiological variables were altered during marginal Zn deficiency. Ten weaned crossbred Hereford Angus heifer calves, weighing $163{\pm}2kg$, were utilized. Five calves were fed a Zn - deficient (- Zn) brome-alfalfa hay diet containing 17 mg Zn/kg diet DM, and five calves were fed a Zn-adequate (+Zn) diet with 23 mg Zn/kg diet DM from $ZnSO_4$ added to the - Zn diet (total diet, 40 mg Zn/kg diet DM), for 32 d. At 21 d the - Zn calves had a reduction (p < .05) in feed efficiency. By 25 d, plasma Zn and alkaline phosphatase concentrations were reduced (p < .05) in the - Zn calves. Blood urea nitrogen, glucose, insulin, IGF-I, Cu plasma concentration and Zn and Cu concentrations of red blood cell (RBC) and liver were not altered (p > .05) by the - Zn diet through 25 d. In response to a single i. m. injection of dexamethasone (20 mg) on d 25, calves fed the two dietary Zn amounts showed no changes (p > .05) in plasma or RBC Zn and Cu concentrations, serum IGF-I, insulin, and glucose when measured at 6, 12, 24, 48, 72, and 96 h after injection. In response to an intradermal injection of phytohemagglutinin on d 30, cell mediated immune (CMI) response was reduced (p < .05) in the - Zn calves. These observations indicate that during a marginal Zn deficiency in calves, there was a decrease in feed efficiency, plasma Zn, serum alkaline phosphatase, and CMI response.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.3
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• pp.472-476
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• 2007

In this study, we investigated methods for p-type ZnO deposition as well as stability enhancement of its properties. The film was prepared by co-depositing AlAs and ZnO in a RF magnetron sputtering system. Property variation was monitored with photoluminescence and Hall measurements by stressing the films at $250^{\circ}C$ for various duration upto 144 hours. Results indicated that co-deposition is a useful method for p-type ZnO preparation. In particular, pre-treatment in 30% $H_2O_2$ for 1min was observed to be effective in reducing the property variation taking place during the subsequent high temperature processes.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.50-56
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• 2011

In this study, the effects of ZnO buffer layer thickness and annealing temperature on the heterojunction diode, ZnO/b-ZnO/p-Si(111), were reported. The effects of those on the structural and electrical properties of zinc oxide (ZnO) films on ZnO buffered p-Si (111) substrate were also studied. Structural properties of ZnO thin films were studied by X-ray diffraction and I-V characteristics were measured by a semiconductor parameter analyzer. ZnO thin films with 70 nm thick buffer layer and annealing temperature of $700^{\circ}C$ showed the best c-axis preferred orientation. The best electrical property was found at the condition of buffer layer annealing temperature of $700^{\circ}C$ and 50nm thick ZnO buffer layer (resistivity: $2.58{\times}10^{-4}[{\Omega}-cm]$, carrier concentration: $1.16{\times}1020[cm^{-3}]$). The I-V characteristics for ZnO/b-ZnO/p-Si(111) heterojunction diode were improved with increasing buffer layer thickness at buffer layer annealing temperature of $700^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.120-121
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• 2006

To investigate the ZnO thin films which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. Al sputtering process of ZnO thin films substrate temperature, work pressure respectively is $100^{\circ}C$ and 15 mTorr, and the purity of target is ZnO 5N. The ZnO thin films were in-situ annealed at $600^{\circ}C$, $800^{\circ}C$ in $O_2$ atmosphere. Phosphorus (P) and arsenic (As) were diffused into ZnO thin films sputtered by RF magnetron sputtering system in ampoule tube which was below $5{\times}10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAS_2$. Those diffusion was perform at $650^{\circ}C$ during 3hr. We confirmed that p-type properties of ZnO thin films were concerned with dopant sources rather than diffusion temperature.