• Analytical Science and Technology
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• v.32 no.6
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• pp.233-242
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• 2019

Substance identification is the first step of the REACH registration. It is essential in terms of Classification, Labelling and Packaging (CLP) regulation and because even trace amounts of impurities or additives can affect the classification. In this study, a scheme for the screening, quantification, and interpretation of trace amounts of hazardous inorganic substances is proposed to detect the presence of more than 0.1% hazardous inorganic substances that have been affecting the hazard classification. An exemplary list of hazardous inorganic substances was created from the substances of very high concern (SVHCs) in REACH. Among 201 SVHCs, there were 67 inorganic SVHCs containing at least one or ~2-3 heavy metals, such as As, Cd, Co, Cr, Pb, Sb, and Sn, in their molecular formula. The inorganic SVHCs are listed in excel format with a search function for these heavy metals so that the hazardous inorganic substances, including each heavy metal and the calculated ratio of its atomic weight to molecular weight of the hazardous inorganic substance containing it, can be searched. The case study was conducted to confirm the validity of the established scheme with zinc oxide (ZnO). In a substance that is made of ZnO, Pb was screened by XRF analysis and measured to be 0.04% (w/w) by ICP-OES analysis. After referring to the list, the presence of Pb was interpreted just as an impurity, but not as an impurity relevant for the classification. Future studies are needed to expand on this exemplary list of hazardous inorganic substances using proper regulatory data sources.

• Bulletin of the Korean Chemical Society
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• v.25 no.1
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• pp.79-84
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• 2004

The existing technological schemes for processing rhenium-containing raw materials involve the recovery of Re from solutions, which can be effectively achieved by anion exchange method. The application of anion exchange also allows to study rhenium state in aqueous solutions and to develop analytical control methods. The present work is focused on investigation of ion exchange equilibrium in the analytical system Re(VII)-HCl-$SnCl_2$-KSCN-anion exchanger by means of sorption-desorption method as well as by electron, IR- and diffuse reflection spectroscopy. It was shown that rhenium can be quantitatively recovered from this system. It is proposed to use the sorption-spectroscopic method for Re(VII) determination in aqueous solutions. The calibration curve is linear in the concentration range of 0.5-20.0 mg/L (sample volume is 25.0 mL) and the detection limit is 0.05 mg/L. The presence of Mo(VI), Cu(II), Fe(II, III), Ni(II), Zn(II) as well as $K^+,\;Na^+$ do not hinder the solid-phase determination of rhenium. Rhenium (VII) determination by diffuse reflection spectroscopy was carried out in model solutions as well as in samples of river-derived water and in solutions obtained after the dissolution of spent catalysts.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.86.1-86.1
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• 2012

나노재료와 나노기술의 연구개발 지원을 위하여 국가나노인프라인 나노종합팹센터에서 개발되고 있는 나노재료/나노현상의 실시간 관찰을 위한 SiN membrane chip 기술 및 나노그래핀 기반구축에 대한 최근 결과와 향후계획을 소개하고자 한다. 나노재료의 합성, 배열, 구조 등의 실시간 관찰을 가능하게 하기 위하여 제작된SiN membrane chip은 투과전자현미경(transmission electron microscope, TEM)에서 투명한 기판으로, 그 위에 나노재료를 합성, 배열하고 원하는 모양의 전극을 형성하여 나노재료 및 나노소자의 온도변화 및 전기적 특성 측정 등이 가능하다. 이러한 기술은 Ag, Sn, Cu 등 nano-cluster의 percolation 소자, SiN 및 Graphene 나노기공 소자, SiGe, BiTe, Si, ZnO 나노선 및 CNT의 내부구조변화, 상변화 등 다양한 나노재료/나노소자의 나노현상 관찰 및 해석에 적용되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.307.1-307.1
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• 2016

Amorphous zinc tin oxide (ZTO) thin films are being widely studied for a variety electronic applications such as the transparent conducting oxide (TCO) in the field of photoelectric elements and thin film transistors (TFTs). Thin film transistors (TFTs) with transparent amorphous oxide semiconductors (TAOS) represent a major advance in the field of thin film electronics. Examples of TAOS materials include zinc tin oxide (ZTO), indium gallium zinc oxide (IGZO), indium zinc oxide, and indium zinc tin oxide. Among them, ZTO has good optical and electrical properties (high transmittance and larger than 3eV band gap energy). Furthermore ZTO does not contain indium or gallium and is relatively inexpensive and non-toxic. In this study, ZTO thin films were formed by UHV RF magnetron co-sputter deposition on silicon substrates and sapphires. The films were deposited from ZnO and SnO2 target in an RF argon and oxygen plasma. The deposition condition of ZTO thin films were controlled by RF power and post anneal temperature using rapid thermal annealing (RTA). The deposited and annealed films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), ultraviolet and visible light (UV-VIS) spectrophotometer.

• Economic and Environmental Geology
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• v.42 no.3
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• pp.177-193
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• 2009

The Samgwang deposit consists of eight massive mesothermal quartz veins that filled NE and NW-striking fractures along fault zones in Precambrian granitic gneiss of the Gyeonggi massif. The mineralogy and paragenesis of the veins allow two separate discrete mineralization episodes(stage I=quartz and calcite stage, stage II-calcite stage) to be recognized, temporally separated by a major faulting event. The ore minerals are contained within quartz and calcite associated with fracturing and healing of veins that occurred during both mineralization episodes. The hydrothermal alteration of stage I is sericitization, chloritization, carbonitization, pyritization, silicification and argillization. Sericitic zone occurs near and at quartz vein and include mainly sericite, quartz, and minor illite, carbonates and chlorite. Chloritic zone occurs far from quartz vein and is composed of mainly chlorite, quartz and minor sericite, carbonates and epidote. Fe/(Fe+Mg) ratios of sericite and chlorite range 0.45 to 0.50(0.48$\pm$0.02) and 0.74 to 0.81(0.77$\pm$0.03), and belong to muscovite-petzite series and brunsvigite, respectiveIy. Calculated $Al_{IV}$-FE/(FE+Mg) diagrams of sericite and chlorite suggest that this can be a reliable indicator of alteration temperature in Au-Ag deposits. Calculated activities of chlorite end member are $a3(Fe_5Al_2Si_3O_{10}(OH)_6$=0.0275${\sim}$0.0413, $a2(Mg_5Al_2Si_3O_{10}(OH)_6$=1.18E-10${\sim}$7.79E-7, $a1(Mg_6Si_4O_{10}(OH)_6$=4.92E-10${\sim}$9.29E-7. It suggest that chlorite from the Samgwang deposit is iron-rich chlorite formed due to decreasing temperature from high temperature(T>450$^{\circ}C$). Calculated ${\alpha}Na^+$, ${\alpha}K^+$, ${\alpha}Ca^{2+}$, ${\alpha}Mg^{2+}$ and pH values during wallrock alteration are 0.0476($400^{\circ}C$), 0.0863($350^{\circ}C$), 0.0154($400^{\circ}C$), 0.0231($350^{\circ}C$), 2.42E-11($400^{\circ}C$), 7.07E-10($350^{\circ}C$), 1.59E-12($400^{\circ}C$), 1.77E-11($350^{\circ}C$), 5.4${\sim}$6.4($400^{\circ}C$), 5.3${\sim}$5.7($350^{\circ}C$)respectively. Gain elements(enrichment elements) during wallrock alteration are $TiO_2$, $Fe_2O_3(T)$,CaO, MnO, MgO, As, Ag, Cu, Zn, Ni, Co, W, V, Br, Cs, Rb, Sc, Bi, Nb, Sb, Se, Sn and Lu. Elements(Ag, As, Zn, Sc, Sb, Rb, S, $CO_2$) represents a potential tools for exploration in mesothermal and epithermal gold-silver deposits.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.7
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• pp.1285-1290
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• 2017

We prepared ITZO thin films with various thicknesses on glass substrates using RF magnetron sputtering and investigated electrical, optical and structural properties of the thin film. Sheet resistance of ITZO thin film showed a decreasing trend on the increase of film thickness, but its resistivity exhibited a substantially constant value of $5.06{\pm}1.23{\times}10^{-4}{\Omega}-cm$. Transmittance of ITZO thin film moved to the long-wavelength with the increase of film thickness. Figure of merit in a visible light and an absorption area of P3HT:PCBM organic active layer of the 360nm-thick IZTO thin film was $8.21{\times}10^{-3}{\Omega}^{-1}$ and $9.29{\times}10^{-3}{\Omega}^{-1}$, respectively. Through XRD and AFM measurements, it was confirmed that all the ITZO thin films have amorphous structure and the surface roughness of films are very smooth in the range of 0.561 to 0.263 nm. In this study, it was found that amorphous ITZO thin film is a very promising material for organic solar cell.

• Journal of Conservation Science
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• v.36 no.3
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• pp.178-186
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• 2020

Verdigris is a traditional artificial pigment reported on old research papers and according to the methods mentioned in the literature, it is manufactured by the corrosion of copper or copper alloys using vinegar and by further scraping the generated rust. Since the Three Kingdoms Period, various household products with copper alloys, such as bronze and brass, have been used, and pigment analysis of these cultural heritage items has revealed the presence of tin, zinc, lead, and copper in green pigments. Based on these data, five types of verdigris were prepared from copper and copper alloys, and analyzed. the analysis results revealed a bluish green pigmentation, and the chromaticity, particle shape, and oil absorption quantity of each verdigris differed based on the type of copper alloy used in its preparation. The main components of verdigris are Cu, Sn, Zn and Pb, and their proportions depended on the type of copper alloy used during manufacturing. However, the main constituent mineral of the pigments is the same as 'hoganite[Cu(CH₃COO)₂·H₂O]', regardless of the copper alloy used. The result of accelerated weathering test for stability evaluation revealed that verdigris was discolored rapidly, thereby indicating that its stability was low, in particular, the pigments comprising lead presented relatively lower stability.

• Journal of Korean Society of Environmental Engineers
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• v.28 no.5
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• pp.527-534
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• 2006

The purpose of this study is the development of more effective filter-type polymer adsorbent for removal of anionic pollutants from wastewater. In order to synthesize the polymer adsorbent that possesses anionic exchangeable function, carboxyl(-COOH) group of PP-g-AA nonwoven fabric was converted into amine($-NH_2$) group by the chemical modification using diethylene triamine(DETA). FT-IR data indicate that amine group was introduced into PP-g-AA through amidation of grafted acrylic acid by reaction with DETA. The degree of amination increased with increase in the reaction time and temperature of the chemical modification process, and was significantly improved by the pre-swelling treatment of PP-g-AA with solvent and addition of metal chlorides as a catalyst in following order as $NH_4OH>MeOH{\geq}HCl{\geq}H_2O\;and\;AlCl_3>FeCl_3{\geq}SnCl_2{\gg}ZnCl_2{\geq}FeCl_2$, respectively. However, the addition of catalyst limited the reusability of DETA, hence was less useful from the viewpoint of cost effectiveness and waste management. The anion exchange capacity of the aminated PP-g-AA(PP-g-AA-Am) increased with increase in the degree of amination, but it reached maximum value at the degree of amination as about $50{\sim}60%$. The anion exchange capacity of PP-g-AA-Am was higher than those of commercial anion resins.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.2
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• pp.394-400
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• 2014

In this study, we fabricated ITZO thin films on glass substrates with various RF power from 30 to 60W and investigated the electrical, optical and structural properties. ITZO thin film deposited at 50W exhibited the largest figure of merit ($10.52{\times}10^{-3}{\Omega}^{-1}$) and then its resistivity and sheet resistance were $3.08{\times}10^{-4}{\Omega}-cm$ and $11.41{\Omega}/sq.$, respectively. As results of optical characterization, average transmittance of all ITZO thin films were over 80%. ITZO thin films had amorphous structure regardless of the RF power. The FESEM and AFM results showed that all ITZO thin films have a very smooth surface having no cracks and defects and the film deposited at 50W exhibit the smallest surface roughness of 0.254nm. We found that a amorphous ITZO thin film is a very promising material for replacing ITO in the next display device such as OLED.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.243-251
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• 1994

ITO(Indium Tin Oxide) film with thickness of 1500.angs. was prepared by an e-beam evaporator onto a glass and a p-type InP wafer (100) LEC grown Zn-doped p=2.3*10$\^$16/cm$\^$-3/), in which the components of ITO used for evaporation source were hot pressed pellets 1 mole% ln$\_$2/O$\_$3/+9 mole% SnO$\_$2/, and evaporated in O$\_$2/ ambient. The optimum conditions to preparation of ITO thin film were the substrate temperature of 350.deg. C, the injected oxygen pressure of 2*10$\^$-4/ torr, and the evaporation speed of 0.2-0.3.angs./sec, respectively. In these optimum conditions, the resistivity and the carrier concentration were 5.3*10$\^$-3/ .ohm.-cm, 6.5*10$\^$20/cm$\^$-3/, and the transmittance was over 80%. From the results of J-V measurements in ITO/p-InP structure solar cells, the higher pressure of injected oxygen, the more open circuit voltage. The efficiency of ITO/p-InP solar cell without the grid line contact, prepared by the optimum evaporation conditions, was 7.19%. By using the grid line contact, the efficiency, the open circuit voltage, the short circuit current density, the fill factor, the series resistance, and the shunt resistance were 8.5%, 0.47V, 29.48 mAcm$\^$-2/ , 61.35%, 3.ohm., and 26.6k.ohm., respectively.