• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.416-419
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• 2003

There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. We studied of phase-change according to temperature and voltage in chalcogenide thin film base on $Ge_2Sb_2Te_5$. Searching for Tg(Glass transition temperature) temperature controlled on hotplate with RT quenching. We measure I-V characteristic through out bottom electrode(ITO) and top electrode(Al) between $Ge_2Sb_2Te_5$. And compared with I-V characteristics after impress the variable stress.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.115-118
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semoconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline stale are assigned to binary states. AST(AsSbTe) used to phase change material by applying electical pulses. Thickness of AST chalcogenide thin film have about 100nm. Electrodes are made of ITO and Al. $T_c$(Crystallization temperature) of AST system is lower than that of the GST(GeSbTe) system, so that the current pulse width of crystallization process can be decreased.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.181-182
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• 2011

Phase-change materials can be cycled by exposure to laser beam, and as a function of the pulse intensity and duration, the laser beam triggers the switching from crystalline to amorphous phase and back. In other to progress better crystallization transition and amorphization long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10, 20 and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

• 한국주조공학회지
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• 제17권1호
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• pp.76-84
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• 1997

An investigation of the effects of transverse magnetic field on melt convection and macrosegregation in vertical Bridgman growth of Te doped InSb was carried out by means of microstructure observation, the measurement of Te distribution by Hall measurement, electrical resistivity measurement and X-ray analysis. Prior to the experiments, interface stability, convective instability and suppression of convection by magnetic field were examined. A thermosolutal convection in the Te doped InSb melt occurred in the examined growth condition without magnetic field. The effective distribution coefficient, $K_{eff}$, was about 0.35 without magnetic field, 0.45 with magnetic field of 2kG, and 0.7 at 4kG. It was found that the stronger the applied magnetic field was, the more the convection was suppressed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.143-146
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• 1996

In (GeTe)$_{100-x}$(Sb$_2$Te$_3$)$_{x}$(x=33.5, 50, 66.5, 80 at.%) thin films, the optical properties of amorphous and crystalline thin film, XRD were studied. Also, the application for the phase change optical recording materials with the high stability and rapid erasing ability were studied. In the (GeTe)$_{100-x}$(Sb$_2$Te$_{3}$)$_{x}$ the transmittance was decreased with the increase of x. In all thin films, the transmittance was decreased and the reflectance was increased by annealing and particularly, the reflectance before and after annealing showed the large reflectance ratio. The XRD pattern, it was confined that these change of optical properties was due to the crystallization of amorphous thin films. The reflectance change was investigated using isothermal annealing condition.ion.ion.

• 정보저장시스템학회논문집
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• 제1권1호
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• pp.93-98
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• 2005

Rewritable optical disk is one of the essential data storage media in these days, which takes advantage of the different optical properties in the amorphous and crystalline states of phase change materials. As well known, data transfer rate is one of the most important parameter of the phase change optical disks, which is mostly limited by the crystallization speed of recording media. Therefore, we doped Sn/Bi to $Ge_2Sb_2Te_5$ alloy in order to improve the crystallization speed and investigated the dependence of phase change characteristics on Sn/Bi doping concentration. The Sn/Bi doped $Ge_2Sb_2Te_5$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, UV-visible spectrophotometer, electron probe microanalysis (EPMA), inductively coupled plasma mass spectrometer (ICP-MS) and atomic force microscopy (AFM). Optimum doping concentration of Bi and Sn were 5${\~}$6 at.$\%$ and the minimum time for crystallization was below than 20 ns. This improvement is correlated with the simple crystalline structure of Sn/Bi doped $Ge_2Sb_2Te_5$ and the reduced activation barrier arising from Sn/Bi doping. The results indicate that Sn/Bi might play an important role in the transformation kinetics of phase change materials..

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.222.2-222.2
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• 2015

A $Ge_2Sb_2Te_5$ nanowire (GST NW) phase change memory device is investigated with Joule heating electrodes. GST is the most promising phase change materials, thus has been studied for decades but atomic structure transition in the phase-change area of single crystalline phase-change material has not been clearly investigated. We fabricated a phase change memory (PCM) device consisting of GST NWs connected with WN electrodes. The GST NW has switching performance with the reset/set resistance ratio above $10^3$. We directly observed the changes in atomic structure between the ordered hexagonal close packed (HCP) structure and disordered amorphous phase of a reset-stop GST NW with cross-sectional STEM analysis. Amorphous areas are detected at the center of NW and side areas adjacent to heating electrodes. Direct imaging of phase change area verified the atomic structure transition from the migration and disordering of Ge and Sb atoms. Even with the repeated phase transitions, periodic arrangement of Te atoms is not significantly changed, thus acting as a template for recrystallization. This result provides a novel understanding on the phase-change mechanism in single crystalline phase-change materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.268-271
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• 2004

The phase transition from amorphous to crystalline states, and vice versa, of $Ge_2Sb_2Te_5$ films by applying electrical pulses have been studied. This material can be used as nonvolatile memory. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.80-81
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• 2005

Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a sample of PRAM with thermal protected layer. We have investigated the phase transition behaviors in function of process factor including thermal protect layer. As a result, we have observed that set voltage and duration of protect layer are more improved than no protect layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.57-57
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• 2010

In this study, nano-sized phase change materials were evaluated using nanoimprint lithography and c-AFM technique. The 200nm in diameter phase change nano-pillar device of GeSbTe, AgInSbTe, InSe, GeTe, GeSb were successfully fabricated using nanoimprint lithography. And the electrical properties of the phase change nano-pillar device were evaluated using c-AFM with pulse generator and voltage source.