• Journal of the Korean Society for Precision Engineering
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• v.12 no.7
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• pp.46-52
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• 1995

This paper proposes methodologies for the development of radiation thermometer using InSb photo-detector of which spectral sensitivity is excellent over the wave length range of 2 .mu. m .approx. 5 .mu. m. The proposed radiation thermometer has broad measurement range from normal to high, up to more than 1000 .deg. C, with high accuracy, and can measure temperature on the material surface or heat emission noncontactely with high speed. Optical system was consisted of two convex lens with foruslength of 15.2mm for infrared lay focusing, Ge filter to cut the short wave length components and sapphire filter to cut the long wave length components. The cold shielded was installed in the whole surface of the light-absorbing element to remove the error- mometer, calibration using black body furnace which has temperature range of 90 .deg. C .approx. 1100 .deg. C was carried out, and temperature calaibration curve was obtained by exponential function curvefitting. The result shows maximum error less than 0.24%(640K .+-. 1.6K) over the measurement range of 90 .deg. C .approx. 700 .deg. C, and from this result the usefulness of the developed thermometer has been confirmed.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.108-115
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• 2009

The superlattice infrared photodetector (SLIP) with an active layer of 8/8-ML InAs/GaSb type-II strained-layer superlattice (SLS) of 150 periods was grown by MBE technique, and the proto-type discrete device was defined with an aperture of $200-{\mu}m$ diameter. The contrast profile of the transmission electron microscope (TEM) image and the satellite peak in the x-ray diffraction (XRD) rocking curve show that the SLS active layer keeps abrupt interfaces with a uniform thickness and a periodic strain. The wavelength and the bias-voltage dependences of responsivity (R) and detectivity ($D^*$) measured by a blackbody radiation source give that the cutoff wavelength is ${\sim}5{\mu}m$, and the maximum Rand $D^*$ ($\lambda=3.25{\mu}m$) are ${\sim}10^3mA/W$ (-0.6 V/13 K) and ${\sim}10^9cm.Hz^{1/2}/W$ (0 V/13 K), respectively. The activation energy of 275 meV analyzed from the temperature dependent responsivity is in good agreement with the energy difference between two SLS subblevels of conduction and valence bands (HH1-C) involving in the photoresponse process.