• Economic and Environmental Geology
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• v.43 no.2
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• pp.73-84
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• 2010

Gold and silver deposits within the Eunjeok and Sangeun mines are located in Yeongam district, Cheollanamdo-province. They are composed of vein ore bodies infilling the fractures of Cretaceous rhyolitic tuff. The Eunjeok mine have three gold and silver bearing hydrothermal veins which is infilling the fracture of rhyolitic tuff. Major ore minerals within the Eunjeok and Sangeun mines are arsenopyrite, pyrite, chalcopyrite, sphalerite and galena and minor ores are electrum, native silver and argentite. Sericitization is dominant in alteration zone and chloritization and dickitization is minor. Quartz veins in the Eunjeok and Sangeun mine have the similar paragenesis and vein textures such like breccia, crustiform, comb and vuggy morphology indicating the formation of typical epithermal environment. In order to carry out the preliminary feasibility study of mine according to the commodity and elucidate the occurrence features of mineral resources from Eunjeok and Sangeun mine, common commodity (Pb, Zn, Cu, Fe, Mo, W, Au and U), and industrial commodity (In, Re, Ga, Ge, Se, Te, Y, Eu and Sm) for 17 ore specimen were analyzed. It is tentatively thought that there is no exploitable mine for iron, lead, zinc, copper, tungsten and uranium based on the preliminary result. If the reserves are secured through the detailed prospecting in case of molybdenum and silver, it is tentatively thought that there will be exploitable deposits depending on international metal price. If we assume the vein width from 0.25 m to 2 m including alteration zone with the gold grade of 80g/t, it is inferred that the resources amount of the Eunjeok-Sangeun mines range from 6.5 to 65ton. However, as the vein structure of the Eunjeok and Sangeun mines is developed together with alteration zone, it should be estimated to include potential alteration zone in order to yield the average grade. It is needed to carry out more exploration in the near future because the reserves can be flexibly estimated according to the change of average grade considering the alteration zone.

• Korean Journal of Optics and Photonics
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• v.18 no.5
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• pp.351-361
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• 2007

The samples composed of a GST thin film and the protective layers of $ZnS-SiO_2$ or $Al_2O_3$ coated on c-Si substrate were prepared by using the magnetron sputtering method. Samples of three different structures were prepared, that is, i) the GST single film on c-Si substrate, ii) the GST film sandwiched by the protective $ZnS-SiO_2$ layers on c-Si substrate, and iii) the GST film sandwiched by $Al_2O_3$ protective layers on c-Si substrate. The ellipsometric constants in the temperature range from room temperature to $700^{\circ}C$ were obtained by using the in-situ ellipsometer equipped with a conventional heating chamber. The measured ellipsometric constants show strong variations versus temperature. The variation of ellipsometric constants at the temperature region higher than $300^{\circ}C$ shows different behaviors as the ambient medium is changed from in air to in vacuum or the protective layers are changed from $ZnS-SiO_2$ to $Al_2O_3$. Since the long heating time of 1-2 hours is believed to be the origin of the high temperature variation of ellipsometric constants upon the heating environment and the protective layers, a PRAM (Phase-Change Random Access Memory) recorder is introduced to reduce the heating time drastically. By using the PRAM recorder, the GST samples are heated up to $700^{\circ}C$ decomposed preventing its partial evaporation or chemical reactions with adjacent protective layers. The surface image obtained by SEM and the surface micro-roughness verified by AFM also confirmed that samples prepared by the PRAM recorder have smoother surface than the samples prepared by using the conventional heater.

• Transactions of the Society of Information Storage Systems
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• v.4 no.1
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• pp.1-5
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• 2008

Super-resolution near-field structure (super-RENS) technology and solid immersion lens (SIL) based near-field (NF) technology have been expected as promising approaches to increase data capacity or areal density of optical disc. Super-RENS technology has been studied until now using mainly numerical aperture (NA) of 0.85 far-field optical system and possibility of tangential data density increment have been presented. NF technology has been studied with NA over 1 and presented demonstration of removable performance. To achieve much higher density, approach to increase NA of super-RENS by NF technology (Near-Field Super-Resolution, NFSR) can be a candidate and we think this technology would be advantageous compared to wavelength reduction or much higher NA increment of NF technology or much smaller effective optical spot size reduction of far-field super-resolution technology. In this paper we present readout result of ROM media having monotone pits using NF optical system with wavelength of 405nm and NA of 1.84 surface type SIL. GeSbTe material was used for super resolution active layer and pit length is 37.5nm which is shorter than resolution limit 55nm. We present the feasibility of NFSR technology by confirming the CNR threshold according to readout power (Pr) and CNR 33dB over threshold Pr.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.25-30
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• 2002

The ternary semiconducting compounds of the $A_{4}BX_{6}$(A=Cd, Zn, Hg; B=Si, Sn, Ge; X=S, Se, Te) type exhibit strong fluorescence and high photosensitivity in the visible and near infrared ranges, so these are supposed to be materials applicable to photoelectrical devices. These materials were synthesized and single crystals were first grown by Nitsche, who identified the crystal structure of the single crystals. In this paper. author describe the undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ single crystals were grown by the chemical transport reaction(CTR) method using iodine of $6mg/cm^{3}$ as a transport agent. For the crystal. growth, the temperature gradient of the CTR furnace was kep at $700^{\circ}C$ for the source aone and at $820^{\circ}C$ for the growth zone for 7-days. It was found from the analysis of x-ray diffraction that undoped and $Co^{2+}$-doped $Zn_{4}SnSe_{6}$ compounds have a monoclinic structure. The optical absorption spectra obtained near the fundamental absorption edge showed that these compounds have a direct energy gaps. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]

• Journal of radiological science and technology
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• v.26 no.2
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• pp.57-61
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• 2003

The purpose of this study is to compare both 1.5T and 4.7T in Praietal White matter material Phantom using the same methodology at both field strengths. Data at both field strengths are compared in terms of $T_2$ relaxation times, line widths and SNRs MR imaging and $^1H$ MR spectroscopy were performed on GE 1.5T SIGNA system and Broker Biospec 4.7T/30 MRI/MRS system. After phantom axial scan $^1H$ MRS was obtained from T2 weighted image by 3-dimensional localization technique(PRESS : Point RE solved spectroscopy Sequence) this phantom is composed of an aqueous solution 36.7 mmol/L of NAA, 25.0 mmol/L of Cr, 6.3 mmol/L of choline chloride, 30.0 mmol/L or Glu, and 22.5 mmol/L of MI(adjusted to a pH of 7,15 in a phosphate buffet). Data processed using software developed inhouse. At 1.5T, T2 relaxation times for Cho, Cr, and NAA were $0.41{\pm}0.07,\;0.26{\pm}0.04,\;0.46{\pm}0.07$ while at 4.7T they were $0.17{\pm}0.03,\;0.14{\pm}0.05,\;0.20{\pm}0.03$ respectively. At 1.5T, line widths for water, Cho, Cr and NAA were $2.9{\pm}0.7,\;1.6{\pm}0.7,\;1.7{\pm}0.8,\;2.2{\pm}0.02Hz$ while at 4.7T they were $5.2{\pm}1.1,\;4.6{\pm}1.9,\;4.01{\pm}1.8,\;4.8{\pm}1.9Hz$ respectively. It can be seen that $T_2$ relaxation times were significantly shorter at 4.7 compared to 1.5T and that the line widths were also broader. The average SNRs for NAA for subjects at short and long TEs were $23.5{\pm}11.3$ at TE=20 msec ; $15.4{\pm}7.7$ at TE=272 msec at 1.5T and $40{\pm}8.3$ and $17{\pm}3.5$ respectively at 4.7T higher field strength is superior because of improved sensitivity and chemical shift dispersion. However these improvements are partially offset by increased line widths and decrease $T_2$ relaxation times, which act to reduce both sensitivity and resolution. In our experiments with the equipment available to us, 4.7T proton spectra at short TEs exhibit moderately improved sensitivity compared to 1.5T.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.421-421
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• 2009

Since carbon nanotubes (CNTs) are discovered, tremendous attentions have been paid to these materials due to their unique mechanical, electrical and chemical properties. Thereupon, many methods to produce a large scale of CNTs have been contrived by many scientists and engineers. Thus the examination of growth mechanisms of CNTs, which is essential to produce CNTs in large scale, has been an attractive issue. Though many scientists have been strived to investigate and understand the growth mechanisms of CNTs, many of them still remain controversial or unclear. Here we introduce representative growth mechanisms of CNTs, based on broadly employed fabrication methods of CNTs. We applied Thermo-electrical Pulse Induced Evaporation (TPIE) method based on field and thermal evaporation to synthesis of CNTs. However TPIE method was originally devised to fabricate graphene sheets and $Ge_2Sb_2Te_5$ nanostructures. While performing TPIE experiments to synthesize graphene, we eventually found experimental results widely supporting the growth model of CNTs proposed already. We observed the procedure of growth of CNTs obtained by TPIE method through Transmission Electron Microscopy (TEM). We believe this study provides an experimental basis on understanding and investigating carbon-based nanomaterials.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.184-184
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• 2011

반도체 전자 소자의 초고집적회로(VLSI, Very Large Scale Integrated Circuit)가 수년간 지속됨에 따라 실리콘 기반으로 하는 MOSFET 성능의 한계에 도달하게 되었다. 재료 물성, 축소, 소자 공정 등에 대한 원인으로 이를 극복하고자 하는 재료와 성능향상에 관한 연구가 진행되고 있다. 이에 기존 시스템의 전자의 전하 정보만을 응용하는 것이 아니라 전자의 스핀 정보까지 고려하는 스핀트로닉스 연구분야가 주목을 받고 있다. Spin-FET는 스핀 주입, 스핀 조절, 스핀측정 등으로 나뉘어 연구되고 있으며 이 중 스핀 주입의 효율 향상이 우선시 해결되어야 한다. 일반적으로 스핀 주입 과정에서 소스가 되는 강자성체와 스핀 확산 거리가 긴 반도체 물질과의 Conductance mismatch가 문제되고 있다. 이에 자성 반도체는 근본적인 문제를 해결하고 반도체와 자성체의 특성을 동시에 나타내는 물질로써, Si과 Ge (4족) 등의 반도체뿐만 아니라, GaAs, InP (3-5족), ZnO, ZnTe (2-6족) 등의 반도체 또한 많은 연구가 이루어지고 있다. 자성 반도체에서 해결해야 할 가장 큰 문제는 물질이 자성을 잃는 Curie 온도를 상온 이상으로 높이는 것이다. 이에 본 연구는 전이금속이 도핑된 4족 Si 반도체 박막을 성장하고 후처리 공정을 통하여 나타나는 구조적, 자기적 특성을 연구하였다. 펄스 레이저 증착 방법을 통하여 p-type Si 기판위에 전이금속 Fe이 도핑된 박막을 500 nm 로 성장하였다. 성장 온도는 $250^{\circ}C$로 하였고, 성장 분압은 $3 {\times}10^{-3}$Torr 로 유지하며 $N_2$ 가스를 사용하였다. 구조적 결과를 보기 위해 X선 회절 분석과 원자력 현미경 결과를 확인하였고, 자기적 특성을 확인하기 위해 저온에서 초전도 양자 간섭계로 조사하였다. XRD를 통해 (002)면, (004)면의 Si 기판 결정을 보았으며, Fe 관련된 이차상이 형성됨을 예측해 보았다. ($Fe_3Si$, $Fe_2Si$ 등) 초전도 양자 간섭계에서 20 K에서 측정한 이력 현상을 관찰하고, 온도변화에 따른 전체 자기모멘트를 관찰하였으며 이는 상온에서도 강자성 특성이 나타남을 확인하였다.

• Proceedings of the KSMRM Conference
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• 2002.11a
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• pp.111-111
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• 2002

Purpose： This study is to compare the distinct brain activation between implicit and explicit memory retrieval tasks using a non-invasive blood-oxygenation-level-dependent (BOLD) functional magnetic resonance imaging(fMRI). Materials ＆ Methods： We studied seven right-handed, healthy volunteers aged 21-25 years(mean；22 years) were scanned under a 1.5T Signa Horizon Echospeed MR imager(GE Medical Systems, Milwaukee, U.S.A.). During the implicit and explicit memory retrieval tasks of previously teamed words under the conceptual processing, we acquired fMRI data using gradient-echo EPI with 50ms TE, 3000ms TR, 26cm${\times}$26cm field-of-view, 128${\times}$128 matrix, and ten slices(6mm slice thickness, 1 mm gap) parallel to the AC-PC(anterior commissure and posterior commissure) line. By using the program of statistical parametric mapping(SPM99), functional activation maps were reconstructed and quantified.

• Journal of the Korean Magnetic Resonance Society
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• v.5 no.2
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• pp.99-109
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• 2001

Authors investigated neuronal changes of local cellular metabolism in the cerebral lesions of Parkinsonian symptomatic side between before and after stereotactic neurosurgery by follow-up 1H magnetic resonance spectroscopy (MRS). Patients with Parkinson's disease (PD) (n = 15) and age-matched normal controls (n = 15) underwen MRS examinations using a stimulated echo acquisition mode (STEAM) pulse sequence that provided 2${\times}$2${\times}$2 ㎤ (8ml) volume of interest in the regions of substantia nigra, thalamus, and lentiform nucleus. Spectral parameters were 20 ms TE, 2000 ms TR, 128 averages,2500 Hz spectral width, and 2048 data points. Raw data were processed by the SAGE data analysis package (GE Medical Systems). Peak areas of N-acetylaspartate (NAA), creatine (Cr), choline-containing compounds (Cho), inositols (Ins), and the sum (Glx) of glutamate and GABA were calculated by means of fitting the spectrum to a summation of Lorentzian curves using Marquardt algorithm. After blindly processed, we evaluated neuronal alterations of observable metabolite ratios between before and after stereotactic neurosurgery using Pearson product-moment analysis (SPSS, Ver. 6.0). A significant reduction of NAA/Cho ratio was observed in the cerebral lesion in substantia nigra of PD patient related to the symptomatic side after neurosurgery (P : 0.03). In thalamus, NAA/Cho ratio was also significantly decreased in the cerebral lesion including the electrode-surgical region (P : 0.03). A significant reduction of NAA/Cho ratio in lentiform nucleus was not oberved, but tended toward significant reduction after neurosurgery (P = 0.08). In particular, remarkable lactate signal was noted from the surgical thalamic lesions of 6 among 8 patients and internal segments of globus pallidus of 6 among 7 patients, respectively. Significant metabolic alterations of NAA/Cho ratio might reflect functional changes of neuropathological processes in the lesion of substantia nigra, thalamus, and lentiform nucleus, and could be a valuable finding fur evaluation of Parkinson's disease after neurosurgery. Increase of lactate signals, being remarkable in surgical lesions, could be consistent with a common consequence of neurosurgical necrosis. Thus, IH MRS could be a useful modality to evaluate the diagnostic and prognostic implications fur Parkinsons disease after functional neurosurgery.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.324-325
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• 2014

Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.