• Electrical & Electronic Materials
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• v.12 no.8
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• pp.18-23
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• 1999

InP 소자 기술은 밀리미터파 회로 제작에 지금까지 개발된 기술 중 가장 경쟁력 있는 기술로 InP HEMT와 HBT를 이용하여 100㎓ 이상의 회로가 만들어지고 있다. GaAs 소자 기술에 비해 InP 소자기술은 주파수 특성과 잡음특성, 집적도에 있어서 우수하나 반면에 V-band 이하의 주파수에서 전력특성이 나쁘며, 가격이 비싼 단점이 있다. V-band 이상의 고주파 대역에서 InP 소자기술은 대부분의 면에서 GaAs 소자기술을 능가하여 극초고주파에서 적용가능한 유일한 소자기술이 된다. 본 논문에서는 InP 소자 기술에 대한 기본적인 내용과 응용 예를 소개한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.183-184
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• 2007

A 40 Gb/s transimpedance amplifier IC was designed and fabricated with a InP/InGaAs HBTs technology. In this study, we interconnect 40Gbps trans impedance amplifier IC to a duroid substrate by a flip chip bonding instead of conventional wire bonding for interconnection. For flip chip bonding, we developed fine pitch bump with the $70{\mu}m$ diameter and $150{\mu}m$ pitch using WLP process. To study the effect of WLP, electrical performance was measured and analyzed in wafer and package module using WLP. The Small signal gains in wafer and package module were 7.24 dB and 6.93dB respectively. The difference of small signal gain in wafer and package module was 0.3dB. This small difference of gain is due to the short interconnection length by bump. The characteristics of return loss was under -10dB in both wafer and module. So, WLP process can be used for millimeter wave GaAs MMIC with the fine pitch pad and duroid substrate can be used in flip chip bonding process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.3-3
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• 2009

• ETRI Journal
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• v.27 no.1
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• pp.75-80
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• 2005

This paper addresses a fully-integrated low phase noise X-band oscillator fabricated using a carbon-doped InGaP heterojunction bipolar transistor (HBT) GaAs process with a cutoff frequency of 53.2 GHz and maximum oscillation frequency of 70 GHz. The oscillator circuit consists of a negative resistance generating circuit with a base inductor, a resonating emitter circuit with a microstrip line, and a buffering resistive collector circuit with a tuning diode. The oscillator exhibits 4.33 dBm output power and achieves -127.8 dBc/Hz phase noise at 100 kHz away from a 10.39 GHz oscillating frequency, which benchmarks the lowest reported phase noise achieved for a monolithic X-band oscillator. The oscillator draws a 36 mA current from a 6.19 V supply with 47.1 MHz of frequency tuning range using a 4 V change. It occupies a $0.8mm{\times}0.8mm$ die area.

• ETRI Journal
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• v.31 no.5
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• pp.601-603
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• 2009

This letter presents a high performance 2.4 GHz two-stage power amplifier (PA) operating in the temperature range from $-30^{\circ}C$ to $+85^{\circ}C$ for IEEE 802.11g, wireless local area network application. It is implemented in InGaP/GaAs hetero-junction bipolar transistor technology and has a bias circuit employing a temperature compensation technique for error vector magnitude (EVM) performance. The technique uses a resistor made with a base layer of HBT. The design improves EVM performance in cold temperatures by increasing current. The implemented PA has a dynamic EVM of less than 4%, a gain of over 26 dB, and a current less than 130 mA below the output power of 19 dBm across the temperature range from $-30^{\circ}C$ to $+85^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.10-12
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• 1996

AlGaAs/GaAs Heterojunotion Bipolar Transistors (HBTs) with various emitter areas were fabricated and the device size dependence on the current gain was examined. With the different emitter areas, the passivated devices having the same peripheral length were fabricated and measured. The measured base current density in the Gummel plots shows an ideality factor of nearly 2. It is found that as the emitter area becomes small, the base current density with the ideality factor of 2 increases linearly, and as the emitter perimeter/area ratio becomes large, the surface recombination current density component increases. The current gain performance in AlGaAs/GaAs HBTs is mainly determined by either the larger emitter area or the smaller ratio of the emitter perimeter to the emitter area. These results will be compared with experimental works for GaInP/GaAs HBTs

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.229-232
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• 2000

InP/lnGaAs HPT's were fabricated by employing Indium Tin Oxide(ITO) transparent emitter contact. The device showed the current gaing 70 was obtained but the emitter series resistance was significantly increased. the electrical charateristics of the device were similar to HBT's. However Vceoff was shifted the positive direction. Such a shift ma be resulted from the formation of the shottky barrier rather than the ohmic contact between ITO and n+ InP emitter.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.2
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• pp.2-11
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• 2000

Technologies for high-speed transistors, active devices essential to the fabrication of millimeter wave circuits have developed drastically with the design and processing techniques. The high frequency transistors, made of GaAs or InP related compound semiconductors mainly, are in the form of MODFETs and HBTs. Other than traditional III-V compound semiconductor materials, SiGe and GaN technologies are emerging as viable candidates of millimeter-wave devices. In this paper, basis and applications of millimeter-wave transistors are introduced.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2006.07a
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• pp.715-715
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• 2006

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.9
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• pp.1064-1069
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• 2007

This paper proposes the highly miniaturized active $90^{\circ} power combiner for application to MMIC. Conventional passive $90^{\circ} power combiners can't be integrated on MMIC because of their very larger size. Therefore, the highly miniaturized $90^{\circ} power combiners are required for a development of highly integrated MMIC. For this paper, the highly miniaturized active $90^{\circ} power combiner employing InGaP/GaAs HBT was fabricated on GaAs substrate for application to highly integrated MMIC. A size of fabricated active $90^{\circ} power combiner was $2.42{\times}1.05$ mm, which was 2.2 % of conventional passive $90^{\circ} power combiner. The fabricated active $90^{\circ} power combiner showed a gain characteristic about 10 dB and a good phase-difference coupling characteristic of $-92.6^{\circ} than conventional passive $90^{\circ} power combiner at 2.4 GHz. The highly miniaturized active $90^{\circ} power combiner exhibited good RF performances comparable to conventional passive $90^{\circ} power combiners. This work is the first report of an active $90^{\circ} power combiner.