• 동력기계공학회지
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• 제12권3호
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• pp.60-65
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• 2008

This study aims at investigating the wear properties of thermally sprayed $Al/Al_2O_3$ metal matrix composite(MMC) coating against different counterparts. $Al/Al_2O_3$ MMC coatings were fabricated using a flame spray system on an Al 6061 substrate. Dry sliding wear tests were performed using the sliding speeds of 0.2m/s and the applied loads of 1 and 2 N. AISI 52100, $Al_2O_3$, $Si_3N_4\;and\;ZrO_2$ balls(diameter: 8mm) were used as counterpart materials. Wear properties of $Al/Al_2O_3$ MMC coatings were analyzed using a scanning electron microscope(SEM) and energy dispersive X-ray spectroscopy (EDX). It was revealed that wear properties of $Al/Al_2O_3$ composite coatings were much influenced by counterpart materials. In the case of AISI 52100 used as counterparts, the wear rate of composites coating layer increased according to the increase of the applied load. On the contrary, in the case of ceramics used as counterparts, the wear rate of composites coating layer decreased according to the increase of the applied load.

• 한국분말재료학회지
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• 제5권4호
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• pp.286-292
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• 1998

Ni$_3$Al intermetallic compound has been tested as a binder phase, in order to improve the oxidation resistance and the mechanical properties of TiC-Ni cermet at a high temperature. The wettability of $Ni_3Al$ on TiC and the optimum sintering condition were investigated in TiC-(30, 40) vol% $Ni_3Al$ cermets with the sintering temperature (1380~$1430^{\circ}C$) and time (30~99 min). The results are summarized as follows: 1) Ni$_3$Al showed good wettability on TiC above 1400$^{\circ}C$ ; 2) The shrinkages of the specimens increased with the sintering temperature, the sintering time and the binder content, whereas the relative densities were decreased; 3) Any other phase did not appeared in the microstructures of all sintered cermets. The grain sizes of TiC became larger as the sintering temperature and the sintering time as well as the binder content increased; 4) The hardness of the cermets decreased with increase in the sintering temperature and the sintering time as well as the binder content; 5) The transverse-rupture strength of the cermets increased with the sintering temperature and the sintering time, whereas it decreased with the binder content.

• 한국주조공학회지
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• 제34권5호
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• pp.156-161
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• 2014

This study is focused on the effect of $Al_2Ca$ as a modifier on eutectic Si modification of A356 alloy. Microstructural observation was carried out for as-cast, as-solution treated and as-aged samples. Solution treatment and aging were performed for 2, 4, 6 and 10 hrs at $540^{\circ}C$ and $170^{\circ}C$, respectively. Although A356 alloy, which $Al_2Ca$ was added, has no significant difference in as-cast phases with normal A356 alloys, it shows much more modified eutectic Si, grain refinement and improved tensile property both in as-cast and as-heat treated conditions. TGA result shows that $Al_2Ca$ added A356 alloy has a certain improvement in oxidation resistance.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1321-1323
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• 1998

We investigated drain leakage current in GaAs power MESFET. The device we studied by 20 simulation has a $1000{\AA}$ thick AlGaAs buffer layer under n-GaAs active layer. The calculation shows that the leakage current through GaAs substrate is significantly reduced by the buffer layer.

• 한국진공학회지
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• 제8권3B호
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• pp.290-296
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• 1999

We have studied the phase separation and ordering phenomeon of InAlAs epilayers grown on InP substrate by LP-MOCVD with DCXRD, PL, and TEM. From the intensity and FWHM of DCXRD and PL, we observed that the structural and optical quality of InAlAs epilayers were improved as growth temperature increased. The band-gap reduction due to phase separation and ordering is 291, 246, and 28 meV in the InAlAs epilayers grown at $565^{\circ}C$, $615^{\circ}C$, and $700^{\circ}C$, respectively, and shows the same from the InAlAs epilayer town at 5$65^{\circ}C$ in which the HRTEM micrograph showed the lattice fringe between InAs-rich and AlAs-rich regions was tilted by $2^{\circ}$ due to composition difference. However the maximum degree of ordering by intensity of extra spots was obtained at medium growth temperature. The annealing experiment by RTA of sample grown at $565^{\circ}$ shows a maximum band-gap shift of 78eV at $880^{\circ}$ for 3 min, and TEM shows that the origin of the blue shift of band-gap is the complete disappearance of ordering. Through annealing we can conclude that short time annealing affects only ordering and that most of the total band-gap reduction (~3/4) occurs by phase separation.

• 한국세라믹학회지
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• 제20권1호
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• pp.49-54
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• 1983

The main object of this study is to investigate the effect of Al powder as an additive on the sintering of calcined alumina comparing with that of calcined alumina alone. The degree of Al oxidation is calculated by measuring the weight increase during the firing Water absorption bulk density and compressive strength of the $Al_2O_3+Al$ system at each temperature are compared with those of $Al_2O_4$ alone. The $Al_2O_3+Al$ system shows better physical propeties than Al2O3 alone and it seems by the SEM observation that the fine oxidized Al particles(fine $Al_2O_3$ particles submicron unit) fill the interstices of the original $Al_2O_3$ par-ticles and thus result in the well-close-packed arrangement of the particles.

• ETRI Journal
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• 제26권5호
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• pp.475-480
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• 2004

Self-assembled InAs quantum dots (QDs) embedded in an InAlGaAs matrix were grown on an InP (001) using a solid-source molecular beam epitaxy and investigated using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. TEM images indicated that the QD formation was strongly dependent on the growth behaviors of group III elements during the deposition of InAlGaAs barriers. We achieved a lasing operation of around 1.5 ${\mu}m$ at room temperature from uncoated QD lasers based on the InAlGaAs-InAlAs material system on the InP (001). The lasing wavelengths of the ridge-waveguide QD lasers were also dependent upon the cavity lengths due mainly to the gain required for the lasing operation.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.665-668
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• 2008

Multi-layered thin films of $Fe_2O_3/Na_3AlF_6/Fe_2O_3/Cu$, Cr, Al were deposited on glass substrate by evaporation process. As high and low refractive index material, $Fe_2O_3$ and $Na_3AlF_6$ were selected and additionally Cu, Al and Cr were chosen as mid reflective layer respectively. Optical properties including reflectance were systematically studied depending on optical thickness of $Na_3AlF_6$ especially $0.25{\lambda}$ and $0.5{\lambda}$. In order to expect the experimental result, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. Based on the results taken by spectrophotometer at viewing angle $45^{\circ}C$, the $Fe_2O_3/Na_3AlF_6/Fe_2O_3/Cu$ show the colour rage between red and orange in $0.25{\lambda}$ and green and pupple in $0.5{\lambda}$ respectively. When the Al was used as mid reflective layers in $Fe_2O_3/Na_3AlF_6/Fe_2O_3$ system, typical yellow colour and mixed colour between green and pupple were appeared in $0.25{\lambda}$ and $0.5{\lambda}$ of $Na_3AlF_6$ respectively. As compared the experimental result to simulation data, it was found out that the experimental data is relatively well matched with the EMP simulation data.

• 전자공학회논문지 IE
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• 제43권2호
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• pp.7-10
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• 2006

일반적인 산화 절연 게이트 대신 $BaTa_2O_6$를 사용한 GaN metal-insulator-semiconductor(MIS) 구조를 제작하였다. $Al_2O_3$(0001) 기판 위에서와 GaAs(001) 기판 위에서의 GaN 막의 누설 전류는 각각 $10^{-12}-10^{-13}A/cm^2$와 $10^{-6}-10^{-7}A/cm^2$로 측정되었다. 이 막의 누설전류는 각각 $Al_2O_3$(0001) 기판 위의 GaN인 경우는 45 MV/cm가 넘는 공간전하 제한전류에 의하여, GaAs(001) 기판 위의 GaN인 경우는 Poole-Frenkel 방출에 따른다는 것을 확인하였다.

• Applied Microscopy
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• 제43권3호
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• pp.127-131
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• 2013

The crystallization behavior in the $Al_{87}Ni_3Y_{10}$ and $Al_{88}Ni_3Y_9$amorphous alloys has been investigated. As-quenched $Al_{87}Ni_3Y_{10}$ amorphous phase decomposes by simultaneous formation of Al and intermetallic phase at the first crystallization step, while as-quenched $Al_{88}Ni_3Y_9$ amorphous phase decomposes by forming Al nanocrystals in the amorphous matrix. The density of Al nanocrystals is extremely high and the size distribution is homogeneous. Such a microstructure can result from rapid explosion of the nucleation event in the amorphous matrix or growth of the preexisting nuclei embedded in the as-quenched amorphous matrix. The final equilibrium crystalline phases and their distribution at 873 K are exactly same in both $Al_{87}Ni_3Y_{10}$ and $Al_{88}Ni_3Y_9$ alloys.