• Journal of the Optical Society of Korea
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• 제11권3호
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• pp.133-137
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• 2007

We compare electroabsorption modulators (EAMs) with multiple quantum wells (MQWs) based on InGaAs(P)/InP and InGa(Al)As/InAlAs material systems. We carefully choose the quantum-well structures so that the structures based on different material systems have similar band-offset energies and excition-peak wavelengths. Assuming the same light wavelength of $1.55{\mu}m$, we show the transfer functions of EAMs with each quantum-well structure and calculate the escape times of photogenerated charge carriers. As the heavy-hole escape time of the quantum well based on InGaAs(P)/InP is much longer than those of photogenerated charge carriers of InGa(Al)As/InAlAs, the EAM based on the InGa(Al)As/InAlAs material seems to be more suitable for high-optical-power operation.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.68-72
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• 2008

AlGaInP high-brightness LEDs(HB-LEDs) have gained importance a variety of application operating in the red, orange, yellow and yellow-green wavelength. The light generated from inside LED chips should be emitted to the air through the surfaces of the chips. However, because of the differences between the semiconductor and air or epoxy's refractive index, some of the light was blocked so that caused lowering external quantum efficiency. In this study, nano-scale roughness on the top-GaP layer of AlGaInP epitaxial wafer was fabricated to improve' the brightness of AlGaInP LEDs. Nano-scale roughness was made by ICP dry etcher. Our AlGaInP LEDs with nano-scale roughness has higher brightness (about 28.5 %) than standard AlGaInP LEDs.

• 한국환경과학회지
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• 제32권10호
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• pp.731-739
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• 2023

In this study, lab-scale phosphorus coagulation/precipitation experiments were performed using three types of polyaluminum chloride (PAC) with different Al contents (10%, 12%, and 17%). The PO₄-P removal efficiencies at various operating conditions, such as initial PO₄-P concentration, initial pH, and Al/P molar ratio, were evaluated, and correlations among the operating factors affecting phosphorus coagulation/precipitation with PAC were derived to optimize the process efficiency. When the initial PO₄-P concentration was 0.065 and 0.161 mmol P/L under an initial pH of 8-10, the optimal PAC dose was 0.126-0.378 and 0.189-0.667 mmol Al/L, respectively. Under these conditions, the Al/P molar ratio was 2.16-6.18 and 1.28-4.30, respectively, and the PO₄-P removal efficiency was in the range of 40.2-92.5%. When the Al/P molar ratio was 2 or less under an initial pH condition of 6-8, the PO₄-P removal efficiency was approximately ≤40% owing to insufficient Al³⁺ ions. However, when the Al/P molar ratio is 3-5, the PO₄-P removal efficiency improved to approximately 80-90%. Thus, the optimal Al/P molar ratio to achieve a PO₄-P removal efficiency of over 90% was determined to be approximately 4 in the PO₄-P coagulation/precipitation process using PAC.

• 한국주조공학회지
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• 제20권2호
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• pp.89-96
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• 2000

The effects of modification processing on the refinement of primary Si and the wear behavior of hyper-eutectic Al-Si alloys have been mainly investigated. Refining effects of primary Si in Al-17%Si alloy was more efficient than that of B.390 alloy. Optimum condition of getting the finest primary Si microstructure was when AlCuP modifier is added into the melt at $750^{\circ}C$ and held it at $700^{\circ}C$ for 30 minutes. Wear loss in the specimens of as-cast condition decreases as the size of primary Si decreases, in the order of B.390 alloy, B.390 alloy with AlCuP addition, Al-17%Si alloy and Al-17%Si alloy with AlCuP addition. Wear loss in the aged condition of Al-17%Si alloy, B.390 alloy and B.390 alloy with AlCuP addition decreased due to the increase of compressive residual stress in the matrix by the aging treatment. While, wear loss increased in the aged specimens of Al-17%Si alloy with AlCuP addition and Hepworth addition in which compressive residual stress decreases by the aging treatment. Therefore, it is assumed that higher compressive residual stress in the matrix can reduce the wear loss in composite materials such as hyper-eutectic Al-Si alloys.

• Composites Research
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• 제13권6호
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• pp.1-8
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• 2000

무가압함침법에 의한 $Al_2O_{3p}$/AC8A 복합재료의 제조와, 제조법과 관련하여 부가적인 Mg의 첨가와 강화상의 부피분율이 $Al_2O_{3p}$/AC8A복합재료의 기계적 성질과 마모저항에 미치는 영향을 조사하였다. 강화상 입자와 기지재료의 일부를 분말로 조합한 혼합분말 속으로 기지금속을 자발적으로 침투시켜 부피분율이 20~40%인 $Al_2O_{3p}$/AC8A 복합재료를 제조할 수 있었다. 그러나 강화상의 부피분율이 40%인 복합재료의 경우 기공율의 상승으로 복합재료의 강도는 저하하였다. Mg의 첨가량이 5~7wt% 일 때 가장 높은 강도를 나타냈으며, 경도는 Mg 첨가량의 증가에 따라 점진적으로 상승하였다. $Al_2O_{3p}$/AC8A복합재료는 저속에서 기지재료에 비해 내마모성이 저하하였으나, 고속에서는 AC8A합금에 비해 약 5.5배의 우수한 내마모성을 나타냈다. 마모기구의 관찰에 의해 부피분율 20% $Al_2O_{3p}$/AC8A복합재료의 경우 연삭마모가 주된 마모기구임을 알 수 있었으며, 부피분율 40% $Al_2O_{3p}$/AC8A복합재료는 높은 기공율로 인한 마모 가중으로 저속에서도 경미한 응착마모가 관찰됐고 마찰 속도가 증가함에 따라 격심한 마모로 진행되었다.

• 한국재료학회지
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• 제11권8호
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• pp.655-660
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• 2001

Metalorganic chemical vapor deposition (MOCVD)으로 성장한 $In_{0.5}$ ($Gal_{1-x}$ $Al_{x}$ )0.5P/GaAS 이중 이종접합 구조의 특성을 표면 광전압 (surface Photovoltage ; SPV) 측정으로 연구하였다. $In_{0.5}$($Gal_{1-x}$ $Al_{x}$ )0.5P/GaAS 이중 이종접합 구조의 SPV 측정값을 Lorentzian 피팅한 띠 간격에너지 ($E_{0}$ ) 값과 조성비 (x)로 구한 이론 값이 잘 일치하였다. 그리고 변조 주파수 의존성을 측정한 결과 SPV 신호의 형태는 변하지 않고, 신호의 크기만이 변하는 것은 광 조사에 따른 전기적 상태의 과도 현상에 따른 것이고, GaAs와 InGaAlP의 특성시간의 차이는 광 캐리어의 수명의 차이로 분석된다. 그리고 온도 의존성 측정으로 $In_{0.5}$ /($Gal_{1-x}$ $Al_{x}$ )0.5P/GaAS 이중 이종 접합 시료의 균일한 변형분포와 계면상태가 양호함을 알 수 있었다.

• 한국진공학회지
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• 제17권4호
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• pp.353-358
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• 2008

AlGaInP 기반 수직형 적색 LED (Light Emitting Diode)의 광추출효율을 증가시키기 위하여 화학적 etching 기술을 이용하여 n-AlGaInP 표면에 삼각꼴 모양의 거칠기를 형성하였다. Etching은 $H_3PO_4$계의 용액을 이용하여 화학적 etching을 진행 하였다. AlGaInP etching은 광추출효율의 증가와 밀접한 관련을 갖고 있으며 AFM (Atomic Force Microscope)을 이용하여 AlGaInP 표면을 분석하여 약 44 nm의 RMS (root-mean-square) 거칠기가 형성됨을 알 수 있었다. 광추출효율은 기존 수직형 적색 LED보다 거칠기가 형성된 수직형 적색 LED에서 41%의 높은 발광 효율을 보임으로써 고효율 수직형 적색 LED의 가능성을 보였다.

• 반도체디스플레이기술학회지
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• 제20권1호
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• pp.12-17
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• 2021

The electronic and magnetic properties for Mn-adsorbed on the chalcopyrite (CH) AlGaP2 semiconductor are investigated by using first-principles FPLMTO method. The clean CH-AlGaP2 without adsorbed Mn is a p-type semiconductor with a direct band-gap. The Mn-adsorbed CH-AlGaP2 exhibits the ferromagnetic state. It is more energetically stable than the other magnetic ones. The interstitial site on P-terminated surface is more energetically favorable one than the Al/Ga-terminated surface, or the other adsorbing sites. In the case of Mn-adsorbed Al/Ga-terminated surface, it is induced a strong coupling between Mn-3d and neighboring P-3p electrons. The holes of partially unoccupied minority Mn-3d state and majority (or minority) Al-3p or P-3p state are induced. Thus a high magnetic moment of Mn is sustained by holes-mediated double-exchange coupling. It is noticeable that the semiconducting and half-metallic characteristics of CH-AlGaP2:Mn thin film is disappeared.

• 한국주조공학회지
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• 제15권4호
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• pp.416-421
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• 1995

Recently Al-Cu-P alloys are used to refine primary Si of hypereutectic Al-Si alloys. Because it has inside AlP compound that acts as nucleation site in the melt, Al-Cu-P alloy has good refinement effect in lower holding temperature and after shoter holding times. In this study Al-Cu-P refinement agent was made by mechanical alloying method. When Al-13.5wt%Cu-1.5wt%P was alloyed mechanically for 30hr in Ar atmosphere by high energy ball mill, it had the refinement effect that showed primary Si size of about $30{\mu}m$ in Al-20wt%Si at $760^{\circ}C$, treated for 15min.

• Journal of Plant Biology
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• 제37권3호
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• pp.301-308
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• 1994

The individual and combined effects of acidic rain, Mg deficiency (-Mg) and Al surplus (＋Al) on the growth of shoots and roots of pitch pine seedlings and the effect of humic substances (Lit) on Al toxicity were investigated. The growth of height and dry matter were not significantly less for pitch pine seedlings sprayed with simulated acid rain (SAR) of pH 3.5 than for those sprayed with SAR of pH 5.6. But treatments of Al and ＋Al-Mg in soil solution reduced the growth of seedlings in terms of height of shoots, and dry matter of shoots or roots. Effect of Mg deficiency on the growth of seedlings was apparent only when Al was treated simutaneously. The growth of seedlings, regardless of rain pH, decreased in the following order: control=-Mg>Lit＋Al>＋Al>＋Al-Mg. Treatments of Al and ＋Al-Mg in soil solution reduced the total length of secondary and teritary roots of seedlings regardless of rain pH, and decreased in the following order: the primary root