• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.280-287
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• 2000

Adsorption behavior and amount of phenolic resin followed silica (SiO2) formation onto silicon nitride(Si3N4) surface were investigated using electrokinetic sonic amplitude (ESA) technique and with UV spectrometer, to fabricate Si3N4/SiC nano-composite based on reaction between SiO2 formed and phenolic resin absorbed onto Si3N4 particle. The amount of SiO2 formed and carbon from phenolic resin absorbed onto Si3N4 surface were calculated quantitatively to adjust the reaction between SiO2 and phenolic resin, resulting in no residual SiO2 and carbon. As a result, pre-heated tempeature for optimized reaction was below 25$0^{\circ}C$, in which there was no residual SiO2 and carbon.

• Journal of the Korean Ceramic Society
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• v.44 no.4 s.299
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• pp.189-193
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• 2007

Effect of additive composition on fracture toughness of in situ-toughened $SiC-Si_3N_4$ composites was investigated for five different additive compositions. The highest toughness $(6.4MPa{\cdot}m^{1/2})\;in\;SiC-Si_3N_4$ composites investigated herein was obtained when an Y-Mg-Si-Al-O-N oxynitride glass was used as a sintering additive. The improvement in fracture toughness was produced by enhanced bridging and deflection by $Si_3N_4$ grains.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.386-391
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• 2014

Silicon nitride ($Si_3N_4$) is regarded as one of the most promising materials for high temperature structural applications due to its excellent mechanical properties at both room and elevated temperatures. However, one high-temperature $Si_3N_4$ material intended for use in radomes has a relatively high dielectric constant of 7.9 - 8.2 at 8 - 10 GHz. In order to reduce the dielectric constant of the $Si_3N_4$, an in-situ reaction process was used to fabricate $Si_3N_4-SiO_2$-BN composites. In the present study, an in-situ reaction between $B_2O_3$ and $Si_3N_4$, with or without addition of BN in the starting powder mixture, was used to form the composite. The in-situ reaction process resulted in the uniform distribution of the constituents making up the composite ceramic, and resulted in good flexural strength and dielectric constant. The composite was produced by pressure-less sintering and hot-pressing at $1650^{\circ}C$ in a nitrogen atmosphere. Microstructure, flexural strength, and dielectric properties of the composites were evaluated with respect to their compositions and sintering processes. The highest flexural strength (193 MPa) and lowest dielectric constant (5.4) was obtained for the hot-pressed composites. The strength of these $Si_3N_4-SiO_2$-BN composites decreased with increasing BN content.

• Journal of Adhesion and Interface
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• v.24 no.2
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• pp.60-63
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• 2023

The AlGaN/GaN heterostructure has high electron mobility due to the two-dimensional electron gas (2-DEG) layer, and has the characteristic of high breakdown voltage at high temperature due to its wide bandgap, making it a promising candidate for high-power and high-frequency electronic devices. Despite these advantages, there are factors that affect the reliability of various device properties such as current collapse. To address this issue, this paper used metal-organic chemical vapor deposition to continuously deposit AlGaN/GaN heterostructure and SiN passivation layer. Material and electrical properties of GaN HEMTs with/without SiN cap layer were analyzed, and based on the results, low-frequency noise characteristics of GaN HEMTs were measured to analyze the conduction mechanism model and the cause of defects within the channel.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.657-657
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• 2013

In-situ observations of nano-scale behavior of nanomaterials are very important to understand onthe nano-scale phenomena associated with phase change, atomic movement, electrical or optical properties, and even reactions which take place in gas or liquid phases. We have developed on the in-situ experimental technologies of nano-materials (nano-cluster, nanowire, carbon nanotube, and graphene, et al.) and their interactions (percolation of metal nanoclusters, inter-diffusion, metal contacts and phase changes in nanowire devices, formation of solid nano-pores, melting behavior of isolated nano-metal in a nano-cup, et al.) by nano-discovery membrane platform [1-4]. Between two microelectrodes on a silicon nitride membrane platform, electrical percolations of metal nano-clusters are observed with nano-structures of deposited clusters. Their in-situ monitoring can make percolation devices of different conductance, nanoclusters based memory devices, and surface plasmonic enhancement devices, et al. As basic evidence on the phase change memory, phase change behaviors of nanowire devices are observed at a nano-scale.

• Journal of the Korean Vacuum Society
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• v.3 no.3
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• pp.360-367
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• 1994

Si2H6PH3 혼합기체를 사용하여 증착된 in-situ P-doped 비정질 실리콘과 SiH4 기체를사용하여 증착한후에 As+ 이온주입에 의해 도핑시킨 다결정 실리콘 박막을 하부 전극으로 하는 캐패시터를 형성 하였다. 여기서 유전박막층은 자연산화막 화학증착된 실리콘질화막 및 질화막의 산화에 의해 형성된 O-N-O 구조를 갖는 것이었다. 두 종류의 하부전극에 따른 캐패시터의 전기적 특서을 조사하였다. 전기 적 특성으로는 정전용량, 누설전류, 절연파괴전압 및 TDDB 등이었다. 이 가운데 정전용량, 누설전류 및 절연파괴전압은 하부전극에 따라 큰 차이를 보이지않았다. 그러나 음의 전장하에서의 TDDB 특성은 in-situ P-doped 비정실 실리콘이 하부전극인 캐패시터가 As+ 이온 주입실리콘이 하부전극인 것에 비해 더우수하였다. 이와 같은 TDDB 특성의 차이는 하부전극 실리콘의 integrity 차이로 인한 자연산화막의 결함 정도의 차이에 기인하는 것 같다. 이를 뒷받침하는 것으로 투과전자현미경 단면사진으로 확인하였 다. Shallow junction을 유지하는데도 in-situ P-doped 비정실 실리콘은 만족할 만한 결과를 보이며 박 막자체의 면저항값도 낮출 수 있어 초고집적 회로의 캐패시터 전극으로서 이용될 수 있는 것으로 평가 되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.149-153
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• 2003

Chemical mechanical polishing (CMP) technology for global planarization of multi-level inter-connection structure has been widely studied for the next generation devices. CMP process has been paid attention to planarized pre-metal dielectric (PMD), inter-layer dielectric (ILD) interconnections. Expecially, shallow trench isolation (STI) used to CMP process on essential. Recently, the direct STI-CMP process without the conventional complex reverse moat etch process has established by using slurry additive with the high selectivity between $SiO_2$ and $Si_3N_4$ films for the purpose of process simplification and n-situ end point detection(EPD). However, STI-CMP process has various defects such as nitride residue, tom oxide and damage of silicon active region. To solve these problems, in this paper, we studied the planarization characteristics using a high selectivity slurry(HSS). As our experimental results, it was possible to achieve a global planarization and STI-CMP process could be dramatically simplified. Also we estimated the reliability through the repeated tests with the optimized process conditions in order to identify the reproducibility of HSS STI-CMP process.