• Transactions on Electrical and Electronic Materials
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• v.10 no.1
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• pp.24-27
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• 2009

N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at $800^{\circ}C$ for 5 minutes in ambient of $O_2$ with pressure of 10Torr. X -ray diffraction shows that the homo-buffer layer is beneficial to the crystalline of N-doped ZnO thin films and all films have preferable c-axis orientation. Atomic force microscopy shows that undoped ZnO thin film grown on homo-buffer layer has an evident improvement of smoothness compared with N-dope ZnO thin films. Hall-effect measurements show that all ZnO films annealed at $800^{\circ}C$ possess p-type conductivities. The undoped ZnO film has the highest carrier concentration of $1.145{\times}10^{17}cm{-3}$. The photoluminescence spectra show the emissions related to FE, DAP and many defects such as $V_{Zn}$, $Zn_O$, $O_i$ and $O_{Zn}$. The p-type defects ($O_i$, $V_{Zn}$, and $O_{Zn}$) are dominant. The undoped ZnO thin film has a better p-type conductivity compared with N-doped ZnO thin film.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.766-772
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• 1996

Undoped $SnO_x$ thin films were deposited on Si(100) substrate by using reactive ioassisted deposition technique (R-IAD). In order to investigate the effect of initial oxygen content and heat treatment on the oxidation state and crystalline structure of tin oxide films, $SnO_x$ thin films were post-annealed at 400~$600^{\circ}C$ for 1 hr. in a vacuum ~$5 \times 10^{-3}$ -3/ Torr or were directly deposited on the substrate of $400^{\circ}C$ and the relative arrival ration ($Gamma$) of oxygen ion to Sn metal varied from 0.025 to 0.1, i.e., average impinging energy ($E_a$) form 25 to 100 eV/atom. As $E_a$ increased, the composition ratio of $N_ON{sn}$ changed from 1.25 to 1.93 in post-annealing, treatment and 1.21 to 1.87 in in-situ substrate heating. In case of post-annealing, the oxidation from SnO to $SnO_2$ was closely related to initial oxygen contents and post-annealing temperature, and the perfect oxidation of $SnO_2$ in the film was obtained at higher than $E_a$=75 eV/atom and $600^{\circ}C$. The temperature for perfect oxidation of $SnO_2$ was reduced as low as $400^{\circ}C$ through in-situ substrate heating. The variation of the chemical state of $SnO_x$ thin films with changing $E_a$'s and heating method were also observed by Auger electron spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.380-380
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• 2010

Currently, organic light-emitting diodes (OLEDs) have been proven of their readiness for commercialization in terms of lifetime and efficiency. In accordance with emerging new technologies, enhancement of light efficiency and extension of application fields are required. Particularly inverted structures, in which electron injection occurs at bottom and hole injection on top, show crucial advantages due to their easy integration with Si-based driving circuits for active matrix OLED as well as large open area for brighter illumination. In order to get better performance and process reliability, usually a proper buffer layer for carrier injection is needed. In inverted top emission OLED, the buffer layer should protect underlying organic materials against destructive particles during the electrode deposition, in addition to increasing their efficiency by reducing carrier injection barrier. For hole injection layers, there are several requirements for the buffer layer, such as high transparency, high work function, and reasonable electrical conductivity. As a buffer material, a few kinds of transition metal oxides for inverted OLED applications have been successfully utilized aiming at efficient hole injection properties. Among them, we chose 2 nm of $WO_3$ between NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] and Au (or Al) films. The interfacial energy-level alignment and chemical reaction as a function of film coverage have been measured by using in-situ ultraviolet and X-ray photoelectron spectroscopy. It turned out that the $WO_3$ interlayer substantially reduces the hole injection barrier irrespective of the kind of electrode metals. It also avoids direct chemical interaction between NPB and metal atoms. This observation clearly validates the use of $WO_3$ interlayer as hole injection for inverted OLED applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.65-65
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• 2006

ZnO 박막은 II-VI족 화합물 반도체로서 상온에서 3.37eV의 넓은 밴드갭을 가지고 있을 뿐만 아니라 GaN(28meV) 보다 상온에서 큰 엑시톤 결합 에너지(60meV)와 열 안정성을 가지고 있다. 특히 ZnO를 base로 한 2차원의 화합물 (MgZnO, CdZnO 그리고 MgO) 반도체 물질은 UV LED, 생 화학 센서와 투명전극 등으로 응용이 가능하다. ZnO/MgZnO 양자우물 구조의 양자제한 효과로 인한 엑시톤 결합에너지와 전기적 광학적 특성 향상으로 광전자 소 자 제작이 가능하다. 그렇지만, Zn-Mg 상평형도에서 ZnO 내에 Mg 고용도가 상온에서 열역학적으로 4at% 이하 이고, 또한 ZnO와 MgO는 각각 우르짜이트 구조와 면심입방 구조를 가지기 때문에 Mg 함량을 높이는데 어려움이 있다. 이러한 문제점을 해결하기 위해 열처리를 함으로써 MgZnO 박막 내에 Mg 함량의 증가와 결정성 향상으로 고품질의 광전자 소자 제작을 가능하게 했다. 본 실험에서는 RF 마그네트론 스퍼터링 장비로 MgZnO 박막 성장 후 Si 기판위에 성장된 박막의 결정성 향상과 MgZnO 내의 Mg 함량 변화를 관찰하기 위해 성장된 박막에 대한 열처리 효과를 연구 하였다.

• Molecules and Cells
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• v.26 no.6
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• pp.621-624
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• 2008

We previously showed that Asb-4 and Asb-17 is uniquely expressed in developing male germ cells. A recent report showed that Asb-9 is specifically expressed in the kidney and testes; however, detailed expression patterns in developing germ cells have not been shown. Northern blot analysis in various tissues demonstrated that mAsb-9 was strongly expressed in the testes. Expression analysis by RT-PCR and Northern blot in developing mouse testes indicates that mAsb-9 is expressed from the fourth week after birth to adulthood, with the highest expression in round spermatids. Expression sites were further localized by in situ hybridization in the testes. Pachytene spermatocytes and spermatids expressed mAsb-9 but spermatogonia and generated spermatozoa did not. This study reveals that mAsb-9 could be a specific marker of active spermatogenesis and would be useful for studies of male germ cell development.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• Journal of the Korean Electrochemical Society
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• v.13 no.2
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• pp.145-152
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• 2010

The gel polymer electrolyte(GPE) were prepared by in-situ thermal cross-linking reaction of homogeneous precursor solution of perfluorinated phosphate-based cross-linker and liquid electrolyte. Ionic conductivities and electrochemical properties of the prepared gel polymer electrolyte with the various contents of liquid electrolytes and perfluorinated organophosphate-based cross-linker were examined. The stable gel polymer electrolyte was obtained up to 97 wt% of the liquid electrolyte. Ionic conductivity and electrochemical properties of the gel polymer electrolytes with the various chain length of perfluorinated ethylene oxide and different content of liquid electrolytes were examined. The maximum ionic conductivity of liquid electrolyte was measured to be $1.02\;{\times}\;10^{-2}\;S/cm$ at $30^{\circ}C$ using the cross-linker($PFT_nGA$). The electrochemical stability of the gel polymer electrolyte was extended to 4.5 V. The electrochemical performances of test cells composed of the resulting gel polymer electrolyte were also studied to evaluate the applicability on the lithium polymer batteries. The test cell carried a discharge capacity of 136.11mAh/g at 0.1C. The discharge capacity was measured to be 91% at 2C rate. The discharge capacity decreased with increase of discharge rate which was due to the polarization. After 500th charge/discharge cycles, the capacity of battery decreased to be 70% of the initial capacity.

• Korean Journal of Environment and Ecology
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• v.19 no.2
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• pp.162-176
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• 2005

This study was carried out as a field survey and a review of articles to investigate a characteristic of the distribution pattern in Korean endemic Corylopsis coreana. Distribution of Corylopsis coreana was found in Boseung-gun, Gwangyang-si, Suncheon-si, Jeumam-myeon Goheung-gun, Ganjeon-myeon Gurye-gun, Mt, Cheongwan Jangheung-gun, Nogodan Mt. Jiri in Jeollanam-do, Mt. Cheonhwang Namwon-si and Beamsagol and Banyabong Mt. Jiri in Jeollabuk-do, Sancheong-gun, hadong-gun and Namhea-gun in Gyeongsangnam-do and Mt. Backun, Pocheon-si in Gyeonggi-do. Total flora in the distribution region of Coryloplsis coreana was recorded as 242 taxa; 70 families, 159 genus, 216 species, 22 varieties, 4 forma. Ratio of taxonomic categories was consisted of Pteridophyte $5.8\%$, Gymnosperm $3.7\%$, Dicotyledon $18.6\%$ and Monocotyledon $71.9\%$. Ratio of Life cycle styles was Annual $1.7\%$ and Perennial $93.3\%$. Ratio of growth habit was appeared to Herb $44.2\%$, Vine $12.4\%$, Shrub $17.8\%$ and Tree $25.6\%$. The distribution region of Corylopsis coreana found to typical type which distribute in N, NE or NW slope. The native Corylopsis coreana of Sinjeonri Sungju-eup in Jellanam-do appeared to have a declining tendency which was caused by influence of tree lager.

• Proceedings of the Korean Society of Environment and Ecology Conference
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• 2005.04a
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• pp.85-101
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• 2005

This study was carried out a field survey and review articles to investigate a characteristic of the distribution pattern in Korean endemic Corylopsis coreana. Distribution of Corylopsis coreana was found from Boseung-gun, Gwangyang-si, Suncheon- si, Jeumanl-myeon Goheung-gun, Ganjeon-myeon Gurye-gun, Mt. Cheongwan Jangheung-gun, Nogodan Mt. Jiri in Jeollanam-do, Mt. Cheonhwang Namwon-si and Beamsagol and Banyabong Mt. Jiri, in Jeollabuk-do, Sancheong-gun, hadong-gun and Namhea-gun in Gyeongsangnam-do and Mt. Backun, Pocheon-si in Gyeonggi-do. Total flora in the distribution region of Coryloplsis coreana were recorded as 242 taxa; 70 families, 159 genus, 216 species, 22 varieties, 4 forma. Ratio of taxonomic categories was consisted of Pteridophyte $5.8\%$, Gymnosperm $3.7\%$, Dicotyledon $18.6\%$ and Monocotyledon $71.9\%$. Ratio of Life cycle styles was Annual $1.7\%$ and Perennial $98.3\%$. Ratio of growth habit was appeared to Herb $44.2\%$, Vine $12.4\%$, Shrub $17.8\%$ and Tree $25.6\%$. The distribution region of Corylopsis coreana found to typical type which distribute in N, NE or NE slope. The native Corylopsis coreana of Sinjeonri Sungju-eup in Jellanam-do appeared to a declining tendency which caused by influence of tree lager.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.16 no.1
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• pp.27-38
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• 2011

The distributions of phytoplankton assemblages and environmental factors in Jinhae Bay and their relationships were investigated to estimate the potential limiting nutrient for phytoplankton growth and community structure. In situ algal bioassay experiments were also conducted to assess the species-specific characteristics in phytoplankton responses under different nutrient conditions (control, N(+) and P(+) treatment). During the study periods, bacillariophyceae and cryptophyceae occupied more than 90% of total phytoplankton assemblages. Phytoplankton standing crops in the inner part of Masan Bay were higher than that of Jinhae Bay. The DIN:DIP ratio, pH and transparency showed the significant positive correlation with phytoplankton biomass. According to cluster and multidimensiolnal scaling (MDS) analysis based on phytoplankton community data from each station, the bay was divided into three groups. The first group included stations from the south-western part of Jinhae bay where cryptophyta species were dominated. The second group was distinguished from inner stations in Masan Bay. These stations showed low transpancy and high DIN:DIP ratio. The other cluster included the stations from the eastern part and central part of Jinhae Bay, which was characterized by the high DSi:DIP ratio and dominant of diatom species. Phosphorous (P) was limited in Masan Bay due to significantly increases in the phytoplankton abundances. Based on stoichiometric limitation and algal bio-assay in Jinhae Bay, nitrogen (N) was a major limiting factor for phytoplankton production. However, silicate (Si) was not considered as limiting factor, since Si/DIN and Si/P ratio and absolute concentration of nutrient did not create any potential stoichiometric limitation in the bay. This implies that high Si availability in winter season contributes favorably to the maintenances of diatom species.