• 한국진공학회:학술대회논문집
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• 한국진공학회 1993년도 제4회 학술발표회 논문개요집
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• pp.29-31
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• 1993

NH3-pplasma treatment has been used for ppassivation of native-oxide-contaminated GaAs surface. Ex-situ band-gapp pphotoluminescence(ppL) measurement shows enhanced intensity for the treated surfaces. Auger electron sppectroscoppy(AES) shows that the treated surface contains nitrogen atoms but no arsenic atoms, which leads us to sppeculate that the graded GaN thin layer was formed on the surface. Based on these results, new metal-insulator-GaAs structure is ppropposed.

• 한국지하수토양환경학회:학술대회논문집
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• 한국지하수토양환경학회 2004년도 임시총회 및 추계학술발표회
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• pp.175-178
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• 2004

Little study has been published specifically addressing the dynamics of nitrate reducing bacteria (NBR) during the bioremediation of nitrate-contaminated aquifer. In our previous study we successfully quantified fumarate-enhanced microbial nitrate reduction rate in a nitrate-contaminated aquifer by using a series of single-well push-pull tests (PPTs). In this study we analyzed the suspended population during PPTs. To monitor changes in the microbial community, PCR amplification of 16S rDNA genes and denaturing gradient gel electrophoresis (DGGE) were used to study the dynamics of the bacterial community in detail. Before the stimulation of NBR, the dominant DGGE bands obtained by PCR were affiliated with V-Proteobacteria consisting of Acinetobacter spp. and Pseudomonas fluorescens. However, as NBR biostimulation proceeded, the dominant patterns of DGGE bands changed, and they were affiliated with Azoarcus denitrificans Td-3 and Flavobacterium xanthum. Azoarcus denitrificans Td-3 is known to completely reduce nitrate to nitrogen gas. The series of single-well push-pull tests in this study should prove useful for conducting rapid, low-cost feasibility assessments for in situ denitrification and provide important information about which microorganisms play a key role in bioremediation of a nitrate contaminated aquifer.

• Asian-Australasian Journal of Animal Sciences
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• 제6권1호
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• pp.5-11
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• 1993

First crop of alfalfa (Medicago sativa L.) was harvested, wilted and ensiled with or without NaOH or $NH_3$, and fed to three rumen fistulated goats in a $3{\times}3$ Latin-square design. Each alkali treatment (2.44% of alfalfa dry matter) was made by spraying its solution prior to ensiling. Silage pH, $NH_3-N$ and butyric acid concentration were increased with each alkali addition, and NaOH-treated silage showed the lowest chemical quality. Compared with untreated silage, digestibilities of organic matter, ADF and cellulose were depressed by both alkali treatments, and the reductions in NaOH-treated silage were significant. Crude protein digestibility was also significantly decreased in NaOH-treated silage, but the goats receiving the silage excreted less nitrogen in urine than those on the other two silages. Nitrogen retention of goats was not different among the treatments. Ruminal solubility and potential degradability of dry matter and nitrogen determined with the in situ bag technique were reduced, and rate of degradation of the two components were increased by the NaOH treatment. Addition of $NH_3$ provided ruminal soluble nitrogen to the silage, but the rate of degradation was similar to that of untreated silage. These results suggest that NaOH treatment would denature the protein and reduce the susceptibility to microbial degradation in the rumen, while no positive effect of alkali treatment on fiber digestion and nitrogen utilization was observed in this study.

• Asian-Australasian Journal of Animal Sciences
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• 제19권5호
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• pp.705-712
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• 2006

Influences of urea treated corncobs (UTC) ensiled with or without different additives on ruminal characteristics, in situ digestion kinetics, nutrient digestibility and nitrogen metabolism were examined in a $5{\times}5$ Latin square design using five ruminally cannulated buffalo bulls. Five iso-caloric and iso-nitrogenous diets were formulated to contain 30% dry matter (DM) from concentrate and 70% DM from 5% UTC ensiled without any additive (U) or with 5% enzose (EN), 5% acidified molasses (AM), 5% non-acidified molasses (NM) and 5% acidified water (AW), respectively. These diets were fed to buffalo bulls at 1.5% of their body weight daily. Ruminal $NH_3$-N concentration at 3 hours (h) post feeding was significantly higher in bulls fed U, NM and AW diets, however, at 6, 9 and 12 h post feeding it was significantly higher in bulls fed EN and AM diets. Ruminal total volatile fatty acids (VFA) and acetate concentrations were significantly higher with EM and AM diets compared with other diets at 3, 6, 9 and 12 h post feeding. Ruminal pH at 6 and 9 h post feeding was higher with EN and AM diets; however; it was notably lower with these diets at 3 h post feeding. Total ruminal bacterial and cellulolytic bacterial counts were higher in bulls fed EN and AM diets than in those fed the other diets. In situ ruminal DM and NDF degradabilities and total tract digestibilities were significantly higher with UTC ensiled with enzose and acidified molasses than those ensiled without any additive or other additives. Nitrogen balance was significantly higher in bulls fed EN and AM diets than those fed U, AW and NM diets. The UTC ensiled with enzose or acidified molasses resulted in better digestibility and N utilization than those ensiled without any additive, with non-acidified molasses and acidified water in buffaloes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.79-83
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• 2001

In order to compare the barrier properties of Ta-N/Si(001) with those of Ta-N/Ta/Si(001), we studied structural properties of films grown by RF magnetron sputtering with various $Ar/N_2$ ratios. To evaluate the barrier properties, the samples were annealed in a vacuum chamber. Ex-situ x-ray scattering measurements were done using an in-house x-ray system. With increasing nitrogen ratio in Ta-N/Si(001), the barrier property of Ta-N/Si(001) was enhanced, finally failed at $750^{\circ}C$ due to the crystallization and silicide formation. Compared with Ta-N/Si(001), Ta-N/Ta/Si(001) forms silicides at $650^{\circ}C$. However it does not crystallize even at $750^{\circ}C$. With increasing nitrogen composition in Ta-N/Ta/Si(001), the formation of tantalum silicide was reduced and the surface roughness was improved. To observe the surface morphology of Ta-N/Ta/Si(001) during annealing, we performed an in-situ x-ray scattering experiment using synchrotron radiation of the 5C2 at Pohang Light Source(PLS). Addition of Ta layer between Ta-N and Si(001) improved the surface morphology and reduced the surface degradation at high temperatures. In addition, increasing $N_2/Ar$ flow ratio reduced the formation of tantalum silicide and enhanced the barrier properties.

• Composites Research
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• 제36권2호
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• pp.101-107
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• 2023

본 연구에서는 질화알루미늄을 강화재로 갖는 알루미늄기지 복합재료를 질소 분위기에서의 아크용해 공정을 통해 제조하였다. 알루미늄과 질소 원자의 화학반응을 1분간 유지시켰을 때, 중간층과 라멜라층으로 구분되는 질화알루미늄 강화상이 자발적으로 알루미늄 용탕 내부에 형성되어 기지 전반에 분포되었다. 복합재료는 약 10 vol.%의 AlN을 가지며, 이 강화재는 계면에서 낮은 열저항과 강한 결합을 보였다. 제조된 복합재료는 열전도도가 높고 열팽창계수는 낮은 열적 특성 조합을 보였다. 또한, 본 연구의 복합재료는 이종원소인 실리콘을 기지에 첨가함으로써 열팽창계수를 추가적으로 감소시키는 것이 가능했다. 이는 아크 용해법으로 제조된 알루미늄기지 복합재료가 낮은 열팽창계수를 요구하는 방열소재로 적용될 수 있는 가능성을 시사한다.

• 한국산림과학회지
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• 제84권2호
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• pp.198-206
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• 1995

이 연구는 루브라참나무림과 레시노사소나무림의 질소 무기화율이 개벌후 어떤 변화를 보이는지에 관하여 조사한 결과이다. 토양상층부 15cm에서의 질소 무기화율이 비닐주머니에 토양을 배양하는 방법을 이용하여 1991년과 1992년 임목 생장 기간 동안(5월-10월) 조사되었다. 두 임목 생장 기간 동안 추정된 참나무림의 질소 무기화율은 개벌 처리구 67kg/ha, 무처리구 30kg/ha였고, 소나무림은 개벌 처리구 27kg/ha, 무처리구 13kg/ha였다. 총 질소 무기화율은 항상 참나무림이 소나무림보다 높았다. 배양전과 한달 배양후 토양으로부터 질산태 질소는 소나무림의 개벌 처리구에서 검출된 반면(두임목 생장 기간동안 평균 질산화율 : 3.3kg/ha), 두 임분의 무처리구와 참나무림의 개벌 처리구에서는 거의 검출되지 않았다. 연구 결과들은 두 임분내 이용 가능한 질소량에 상당한 증가가 개벌후 발생하였으며, 낮은 질산화율은 이 임분들에 질소 보유를 위한 중요한 작용일 가능성을 시사한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35{\mu}m$ Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by $0.35{\mu}m$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and $Si_{2}NO$ species near the new $Si-SiO_{2}$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the $Si-SiO_{2}$ interface and contributed to electron trap generation.

• Membrane and Water Treatment
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• 제8권4호
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• pp.311-321
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• 2017

Hydrophilic and high modulus PPTA molecules were incorporated into PVDF matrix via the in situ polymerization of PPD and TPC in PVDF solution. PPTA/PVDF/NWF blend membrane was prepared through the immersion precipitation phase inversion method and nonwoven coating technique. The membrane integrated technology including PPTA/PVDF/NWF blend membrane and reverse osmosis (RO) membrane was employed to treat the polyester/viscose spunlace nonwoven process wastewater. During the consecutive running of six months, the effects of membrane integrated technology on the COD, ammonia nitrogen, suspended substance and pH value of water were studied. The results showed that the removal rate of COD, ammonia nitrogen and suspended substance filtered by PPTA/PVDF blend membrane was kept above 90%. The pH value of the permeate water was about 7.1 and the relative water flux of blend membrane remained above 90%. After the deep treatment of RO membrane, the permeate water quality can meet the water circulation requirement of spunlace process.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.501-504
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• 2004

High quality GaN layer was obtained on 0001 sapphire substrate using ammonia($NH_3$) as a nitrogen source by gas source molecular beam epitaxy. As a result, RHEED is used to investigate the relaxation processes which take place during the growth of GaN. In-situ RHEED(reflection high electron energy diffraction) appeared streaky-like pattern. The full Width at half maximum of the x-ray diffraction(FWHM) rocking curve measured from plane of GaN has exhibited as narrow as 8arcmin and surface roughness was 7.83nm. Photoluminescence measurement of GaN was investigated at room temperature, where the intensity of the band edge emission is much stronger than that of deep level emission. The GaN epitaxy layer according to various growth condition was investigated.