• Title/Summary/Keyword: Impurity effects

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Mineralogical Analysis and Mechano-Chemical Purification of Natural Silica Ore for High Purity Silica Powder

  • Park, Jesik;Lee, Churl Kyoung;Lee, Hyun-Kwon
    • Korean Journal of Materials Research
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    • v.26 no.6
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    • pp.306-310
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    • 2016
  • To produce 4N grade high-purity silica powder from natural ore, the mineralogical characteristics of natural silica ore were investigated and their effects on the purification process were revealed. The Chinese silica mineral ore used was composed of iron and aluminum as main impurities and calcium, magnesium, potassium, sodium, and titanium as trace impurities; these trace impurities generally exist as either single oxides or complex oxides. It was confirmed that liberation and acidic washing of the impurities were highly dependent on the particle size of the ground silica ore and on its mineralogical characteristics such as the distribution and phases of existing impurities. It is suggested that appropriate size reduction of silica ore should be realized for optimized purification according to the origin of the natural silica ore. A single step purification process, the mechano-chemical washing (MCW) process, was proposed and verified in comparison with the conventional multi step washing process.

Influence of thermo-physical properties on solutal convection by physical vapor transport of Hg2Cl2-N2 system: Part I - solutal convection

  • Kim, Geug-Tae;Kim, Young-Joo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.3
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    • pp.125-132
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    • 2010
  • For typical governing dimensionless parameters of Ar = 5, Pr = 1.16, Le = 0.14, Pe = 3.57, Cv = 1.02, $Gr_s=2.65{\times}10^6$, the effects of thermo physical properties such as a molecular weight, a binary diffusivity coefficient, a partial pressure of component B on solutally buoyancy-driven convection (solutal Grashof number $Gr_s=2.65{\times}10^6$) are theoretically investigated for further understanding and insight into an essence of solutal convection occurring in the vapor phase during the physical vapor transport of a $Hg_2Cl_2-N_2$ system. The solutally buoyancy-driven convection is significantly affected by any significant disparity in the molecular weight of the crystal components and the impurity gas of nitrogen. The solutal convection in a vertical orientation is found to be more suppressed than a tenth reduction of gravitational accelerations in a horizontal orientation. For crystal growth parameters under consideration, the greater uniformity in the growth rate is obtained for either solutal convection mode in a vertical orientation or thermal convection mode in horizontal geometry. The growth rate is also found to be first order exponentially decayed for $10{\leq}P_B{\leq}200$ Torr.

Effects of Ca Implantation on the Sintering and Crack Healing Behavior of High Purity $Al_2$O$_3$ Using Micro-Lithographic Technique-III: Stability of Crack-Like Pore (Ion Implantation으로 Ca를 첨가된 단결정 $Al_2$O$_3$의 Crack-Like Pore의 Healing 거동-III: Stability of Crack-Like Pore)

  • 김배연
    • Journal of the Korean Ceramic Society
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    • v.36 no.9
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    • pp.887-892
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    • 1999
  • The inner crack-like pore with controlled amount of Ca impurity in the high purity alumina single crystal sapphire had been created by micro-fabrication technique which includes ion implanation photo-lithography Ar ion milling and hot press technique. The crack-like pores in two-hour hot pressed specimen were extremely stable even after heat treating at 1,80$0^{\circ}C$ for 5 hours almost no healing was observed. But the crack-like pores in one-hour hot pressed specimen at 1,30$0^{\circ}C$ were healed by heat treatment and the amount of healing was increased with the heat treatment time and temperature and the amount of Ca addition. The edges of crack-like pore parallel to <1100> direction in (001) basal plane were stable but the edges normal to this direction in (00101) plane <1120> direction were unstable to facetting This means that the surface energy of alumina along the <1100> direction in (0001) basal plane in much lower than <1120> direction.

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Chemical Beam Deposition of $MgF_2$ Thin Films (화학선 증착법에 의한 $MgF_2$ 박막제조)

  • 박보현;백성기
    • Journal of the Korean Ceramic Society
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    • v.33 no.3
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    • pp.299-306
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    • 1996
  • We invesgated the fesibility of thin films deposition by pyrolysis of metalorganic precursors using chemical beam deposition (CBD) process. We attempted to understand the effects of deposition variables such as substrate temperature operating pressure effusion cell temperature and H2 partial pressure on the properties of MgF2 grown by CBD. Mg(tfac)2 was used as a precursor. MgF2 thin films were always grown in an amorphous state and crystallized bypost-annealing. he higher the substrate temperature and the lower the operating pressure the less the impurities I the deposited MgF2 thin films. H2 gas has to be supplied for the pyrolitic reaction of Mg(tfac)2 decomposition. MgF2 films annealed in H2 have lower C impurity than those annealed in O2. But their crysatllinity was independent of annealing atmosphere. The optimum conditions for the prepara-tion of MgF2 films by CBD process were as following : The substrate temperature 55$0^{\circ}C$ the operating pressure 10-4 torr; effusion cell temperature 21$0^{\circ}C$ the percentage of H2 100% Post-annealing in H2 gas was required to remove residual carbon and to form MgF2 crystalline phase.

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Sulfide treatment of HgCdTe substrate for improving the interfacial characteristics of ZnS/HgCdTe heterostructure (HgCdTe 기판의 황화 처리에 따른 보호막 특성 향상)

  • Kim, Jin-Sang;Yoon, Seok-Jin;Kang, Chong-Yoon;Suh, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.973-976
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    • 2004
  • The results of numerous studies in III-V semiconductors show that sulfur treatment improves the electrical parameters of III-V compound devices. In this article, we examine the effects of sulfidation of HgCdTe surface on the interfacial characteristics of metal-ZnS-HgCdTe structures. Different from sulfidation in III-V material, S can not be act as an impurity because II-S compounds (ZnS, CdS) generally used as passivant for HgCdTe. Our studies of sulfur-treatment on HgCdTe surface show that sulfur agent forms the S- S, II-S bonds at the surface layer. These bonds are very effective to improve the electrical properties of ZnS layer on HgCdTe by reducing the possibility of native oxides formation. After the sulfidation process, MIS capacitors of HgCdTe show great improvement in electrical properties, such as low density of fixed charge and reduced hystereisis width.

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Study of Multi-Walled Carbon Nanotube Synthesis Using Liquid Nitrogen and Post-Process Filtration

  • Sornsuwit, Nuttaphong;Maaithong, Worawut
    • International Journal of Precision Engineering and Manufacturing
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    • v.9 no.3
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    • pp.18-21
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    • 2008
  • The study deals with the effects of parameters in the synthesis of carbon nanotubes in liquid nitrogen to find the most appropriate conditions such as electrical voltage and time that give carbon nanotubes with large volume and less proportion of impurity, which is a non-nanotubed carbon. The experiment employed the method of arc-discharge between graphite cathode and anode which are immersed in liquid nitrogen. The electrical DC current of 60A and 70A were applied with the time period ranging from 10 seconds to 25 seconds. It was found that the electrical current of 60A and 13 seconds arc-discharge time allowed the largest volume of carbon nanotubes generation. The longer time leads to more impurities around the carbon nanotubes. By the filtration of CNTs-suspended solution using 0.2 micrometers porous paper filter and the characterization using TEM, the carbon nanotubes synthesized in the study were approximately 25 layers multi-walled nanotubes with the average diameter of 18.2 nanometers.

Crystal growth from melt in combined heater-magnet modules

  • Rudolph, P.;Czupalla, M.;Dropka, N.;Frank-Rotsch, Ch.;KieBling, F.M.;Klein, O.;Lux, B.;Miller, W.;Rehse, U.;Root, O.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.5
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    • pp.215-222
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    • 2009
  • Many concepts of external magnetic field applications in crystal growth processes have been developed to control melt convection, impurity content and growing interface shape. Especially, travelling magnetic fields (TMF) are of certain advantages. However, strong shielding effects appear when the TMF coils are placed outside the growth vessel. To achieve a solution of industrial relevance within the framework of the $KRISTMAG^{(R)}$ project inner heater-magnet modules(HMM) for simultaneous generation of temperature and magnetic field have been developed. At the same time, as the temperature is controlled as usual, e.g. by DC, the characteristics of the magnetic field can be adjusted via frequency, phase shift of the alternating current (AC) and by changing the amplitude via the AC/DC ratio. Global modelling and dummy measurements were used to optimize and validate the HMM configuration and process parameters. GaAs and Ge single crystals with improved parameters were grown in HMM-equipped industrial liquid encapsulated Czochralski (LEC) puller and commercial vertical gradient freeze (VGF) furnace, respectively. The vapour pressure controlled Czochralski (VCz) variant without boric oxide encapsulation was used to study the movement of floating particles by the TMF-driven vortices.

Three-dimensional monte carlo simulation and mask effect of low-energy boron ion implantation into <100>single-crystal silicon (<100>방향 실리콘 단결정에서의 저 에너지 붕소 이온 주입 공정에 대한 3차원 몬테 카를로 시뮬레이션 및 마스크 효과)

  • 손명식;이준하;송영진;황호정
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.8
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    • pp.94-106
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    • 1995
  • A three-dimensional(3D) Monte Carlo simulator for boron ion implantation into <100>single-crystal silicon considering the mask structure has been developed to predict the mask-dependent impurity doping profiles of the implanted boron at low energies into the reduced area according to the trend of a reduction in the size of semiconductor devices. All relevant important parameters during ion implantation have been taken into account in this simulator. These are incident energy, tilt and rotation of wafer, orientation of silicon wafer, presence of native silicon dioxide layer, dose, wafer temperature, ion beam divergence, masking thickness, and size and structure of open window in the mask. The one-dimensional(1D) results obtained by using the 3D simulator have been compared with the SIMS experiments to demonstrate its capabilities and confirem its reliability, and we obtained relatively accurate 1D doping profiles. Through these 3D simulations considering the hole structure and its size, we found the mask effects during boron ion implantation process.

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Optimization of Chromatographic Separation of Lysozyme from Homogenate of Hen Egg White by Comparison of Breakthrough Behavior (파과분석(Breakthrough behavior) 비교에 의한 난백으로부터 라이소자임 크로마토그래피 분리 최적화)

  • 김원경;정봉현
    • KSBB Journal
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    • v.14 no.3
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    • pp.279-283
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    • 1999
  • We have compared the breakthrough behavior of lysozyme contained in fresh han egg white on various cation exchagers, and the adsorbent, known by the trade name Cellufine C-200 (Amicon), has shown the best performance. The effects of ion strength, pH, and linear flow rate on the breakthrough behavior were examined using the Cellufine C-200 adsorbent. The optimal conductivity, pH and linear flow rate were determined from the breakthrough behavior and found to be 2.75 mS/cm, 7.0, and 0.635 cm/min, respectively.

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Beryllium Effects on the Morphology of Iron Intermetallics in the A356 Aluminium Casting Alloy (주조용 A356합금에서 Fe계 금속간화합물의 형상에 미치는 Be의 영향)

  • Lee, Jeong-Keun;Park, Chong-Sung;Kim, Myung-Ho
    • Journal of Korea Foundry Society
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    • v.18 no.4
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    • pp.357-363
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    • 1998
  • Microstructure of A356 aluminium alloys cast in a permanent mold was investigated by optical microscope and image analyzer, with particular respect to the shape and size distribution of iron intermetallics known as ${\beta}-phase$ ($Al_5FeSi$). Morphologies of the ${\beta}-phase$ was found to change gradually with the Be:Fe ratio like these. In Be-free alloys, ${\beta}-phase$ with needlelike morphology was well developed, but script phase was appeared when the Be:Fe ratio is above 0.2:1. With the Be:Fe ratios of 0.4:1-1:1, script phase as well as Be-rich phase was also observed. In case of higher Be addition, above 1:1, Be-rich phase was observed on all regions of the specimens, and increasing of the Be:Fe ratios gradually make the Be-rich phase coarse. It was also observed that the ${\beta}-phase$ with needlelike morphology was coarsened with increase of the Fe content in Be-free alloys. However, in Be-added alloys, length and number of these ${\beta}-phases$ were considerably decreased with the increased Be:Fe ratio. It was concluded that Fe impurity element to be crystallized into needlelike intermetallics was tied up by Be addition element, and new phases were crystallized into script or Be-rich intermetallics.

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