• Title/Summary/Keyword: Impurity activation

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The Analysis on the Activation Procedure of Polymer Electrolyte Fuel Cells

  • Jang, Jong-Mun;Park, Gu-Gon;Sohn, Young-Jun;Yim, Sung-Dae;Kim, Chang-Soo;Yang, Tae-Hyun
    • Journal of Electrochemical Science and Technology
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    • v.2 no.3
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    • pp.131-135
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    • 2011
  • It is, in general, believed that during the activation process, the proton conductivity increases due to wetting effect and the electrochemical resistance reduction, resulting in an increase in the fuel cell performance with time. However, until now, very scant information is available on the understanding of activation processes. In this study, dominant variables that effect on the performance increase of membrane electrode assemblies (MEAs) during the activation process were investigated. Wetting, pore restructuring and active metal utilization were analyzed systematically. Unexpectedly, the changes for both ohmic and reaction resistance characterized by the electrochemical impedance spectroscopy (EIS) after initial wetting process were much smaller when considering the degree of cell performance increases. However, the EIS spectra represents that the pore opening of electrode turns into gas transportable structure more easily. The increase in the performance with activation cycles was also investigated in a view of active metals. Though the particle size was grown, the number of effective active sites might be exposed more. The impurity removal and catalytic activity enhancement measured by cyclic voltammetry (CV) could be a strong evident. The results and analysis revealed that, not merely wetting of membrane but also restructuring of electrodeand catalytic activity increase are important factors for the fast and efficient activation of the polymer electrolyte fuel cells.

Photoluminescent and crystallographic characterization of CdTe {111} surfaces grown by the ertical Bridgman method (수직 Bridgman 방법으로 성장된 CdTe {111} 면의 결정학과 광발광 특성)

  • Jeong, T. S.;Park, E. O.;Yu, P. Y.;Kim, T. S.;Lee, H.;Shin, Y. J.;Hong, K. J.
    • Journal of the Korean Vacuum Society
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    • v.8 no.3B
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    • pp.297-301
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    • 1999
  • High quality CdTe single crystal for the solar cell fabrication was grown by vertical Bridgman method. The etch pits patterns of {111} surfaces of CdTe etched by Nakagawa solution was observed the {11} A composed of Cd atoms with typical triangle etch pits of pyramid mode. From the photoluminescence measurement of {111} A, we observed free exciton $(E_x)$ existing only high quality crystal and neutral acceptor bound exciton ($A^{\circ}$, X) having very strong peak intensity. Then, the full width at half maximum and binding energy of neutral acceptor bound exciton were 7 meV and 5.9 meV, respectively. By Haynes rule, and activation energy of impurity was 59meV. Therefore, the origins on impurity level acting as a neutral acceptor were associated Ag or Cu elements.

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Adsorption Characteristics of Flue Gas Components on Zeolite 13X and Effects of Impurity (제올라이트 13X에 의한 배가스 성분의 흡착 특성 및 불순물의 영향)

  • Suh, Sung-Sup;Lee, Ho-Jin
    • Korean Chemical Engineering Research
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    • v.54 no.6
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    • pp.838-846
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    • 2016
  • Most of combustion processess used in industries require recovering or removing flue gas components. Recently a new MBA (moving bed adsorption) process for recovering $CO_2$ using zeolite 13X was developed. In this study, adsorption experiments for carbon dioxide, nitrogen, sulfur dioxide, and water vapor on zeolite 13X were carried out. Adsorption equilibrium and adsorption rate into solid particle were investigated. Langmuir, Toth, and Freundlich isotherm parameters were calculated from the experiment data at various temperatures. Experimental results were consistent with the theoretically predicted values. Also $CO_2$ adsorption amount was measured under the conditions with impurities such as $SO_2$ and $H_2O$. Binary adsorption data were well fitted to the extended Langmuir isotherm using parameters obtained from pure component experiment. However, $H_2O$ impurity less than, roughly, ${\sim}10^{-5}H_2O\;mol/g$ zeolite 13X enhanced slightly $CO_2$ adsorption. Spherical particle diffusion model well described experimentally measured adsorption rate. Diffusion coefficients and activation energies of $CO_2$, $SO_2$, $N_2$, $H_2O$ were obtained. Diffusion coefficients of $CO_2$ and $SO_2$ decreased with small amount of preadsorbed impurity. Parameter values from this study will be helpful to design of real commercial adsorption process.

Study on TSD Characteristics of LiF ( Mg , Cu , P ) Single Crystal (LiF ( Mg , Cu , P ) 단결정의 TSD 특성에 관한 연구)

  • 도시홍
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.26 no.1
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    • pp.8-13
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    • 1990
  • The microscopic relaxation parameters for the single crystal were measured by using thermally stimulated depolarization (TSD). Initial rise method, various heating rate method and total glow peak method were used for the determination of the activation energy and Debye relaxation time from TSD glow curves. Activation energy, pre-exponential factor and relaxation time for impurity-vacancy dipole reorientation were 0.55eV, 1.97$\times$10 super(-12) sec and 12.19sec in average, respectively. Dielectric dissipation factor for the crystal was calculated from the measured TSD glow curve, its value being about 3$\times$10 super(-2).

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A Study on Activation Characteristics Generated by 9 MeV Electron Linear Accelerator for Container Security Inspection (컨테이너 보안 검색용 9 MeV 전자 선형가속기에서 발생한 방사화 특성평가에 관한 연구)

  • Lee, Chang-Ho;Kim, Jang-Oh;Lee, Yoon-Ji;Jeon, Chan-Hee;Lee, Ji-Eun;Min, Byung-In
    • Journal of the Korean Society of Radiology
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    • v.14 no.5
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    • pp.563-575
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    • 2020
  • The purpose of this study is to evaluate the activation characteristics that occur in a linear accelerator for container security inspection. In the computer simulation design, first, the targets consisted of a tungsten (Z=74) single material target and a tungsten (Z=74) and copper (Z=29) composite target. Second, the fan beam collimator was composed of a single material of lead (Z=82) and a composite material of tungsten (Z-74) and lead (Z=82) depending on the material. Final, the concrete in the room where the linear accelerator was located contained magnetite type and impurities. In the research method, first, the optical neutron flux was calculated using the MCNP6 code as a F4 Tally for the linear accelerator and structure. Second, the photoneutron flux calculated from the MCNP6 code was applied to FISPACT-II to evaluate the activation product. Final, the decommissioning evaluation was conducted through the specific activity of the activation product. As a result, first, it was the most common in photoneutron targets, followed by a collimator and a concrete 10 cm deep. Second, activation products were produced as by-products of W-181 in tungsten targets and collimator, and Co-60, Ni-63, Cs-134, Eu-152, Eu-154 nuclides in impurity-containing concrete. Final, it was found that the tungsten target satisfies the permissible concentration for self-disposal after 90 days upon decommissioning. These results could be confirmed that the photoneutron yield and degree of activation at 9 MeV energy were insignificant. However, it is thought that W-181 generated from the tungsten target and collimator of the linear accelerator may affect the exposure when disassembled for repair. Therefore, this study presents basic data on the management of activated parts of a linear accelerator for container security inspection. In addition, When decommissioning the linear accelerator for container security inspection, it is expected that it can be used to prove the standard that permissible concentration of self-disposal.

Dependence of Stress-Induced Leakage Current on Low Temperature Polycrystalline Silicon TFTs

  • Chen, Chih-Chiang;Chang, Jiun-Jye;Chuang, Ching-Sang;Wu, Yung-Fu;Sheu, Chai-Yuan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.622-625
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    • 2003
  • The dependence of stress-induced leakage current on LTPS TFTs was characterized in this study. The impacts of poly-Si crystallization, gate insulator, impurity activation, hydrogenation process and electrostatic discharge damage were investigated. It was observed more TFTs instable characteristic under those process-assisted processes. According to the LTPS roadmap, smaller geometric and low temperature process were the future trend and the stress-induced leakage current should be worthy of remark.

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Development of thin film getters for field emission display

  • Yoon, Young-Joon;Kim, Kyoung chan;Baik, Hong-Koo;Lee, Sung-Man
    • Journal of Korean Vacuum Science & Technology
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    • v.3 no.1
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    • pp.74-78
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    • 1999
  • For a high efficient field emission display (FED), the specific vacuum conditions below 10-7 Torr should be required. However, because the FED has the geometrical restriction due to its micro size, the thin film getters can be proposed for chemical pumping as a way to reduce impurity gases in the panel. The thin film getters, developed by employing the coating of new materials such as NI or Pt on getter surface, can be used without any activation process and show the enhanced sorption characteristics. Especially, using the Zr (1${\mu}{\textrm}{m}$) thin film getters with the Pt surface layer, the significant gettering for various active gases could be achieved from 9$\times$10-5 Torr to 1$\times$10-6 Torr or below. this good sorption properties is mainly contributed to the surface coating layer which shows the catalytic effect for gas dissociation and protects the getter materials against oxidation.

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Growth and Photoluminescience Properties for $AgGaSe_2$ Single Crystal Thin Films ($AgGaSe_2$ 단결정 박막 성장과 광발광 특성)

  • Hong, Kwang-Joon;Yun, Seuk-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.159-160
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    • 2006
  • $AgGaSe_2$ single crystal thin films grown by using hot wall epitaxy (HWE) system. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition ($E_x$) observable only in high quality crystal and neutral bound exciton ($D^{\circ}$,X) having very strong peak intensity. And, the full width at hall maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

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Growth and Optoelectric Characterization of $ZnGa_{2}Se_{4}$ Sing1e Crystal Thin Films (Hot Wall Epitaxy (HWE)에 의한$ZnGa_{2}Se_{4}$단결정 박막 성장과 광전기적 특성)

  • 박창선;홍광준
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.163-166
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    • 2001
  • The stochiometric mix of evaporating materials for the ZnGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa$_2$Se$_4$ single crystal thin films measured from Hall effect by van der Pauw method are 9.63x10$^{17}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively, From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa$_2$Se$_4$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr were 251.9 MeV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on ZnGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$_{x}$) existing only high quality crystal and neutral bound excition (A$^{0}$ ,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.on energy of impurity was 122 meV.

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High-Temperature Corrosion Behavior of Alloy 617 in Helium Environment of Very High Temperature Gas Reactor (초고온가스로 헬륨 분위기에서 Alloy 617의 고온 부식 거동)

  • Lee, Gyeong-Geun;Jung, Sujin;Kim, Daejong;Jeong, Yong-Whan;Kim, Dong-Jin
    • Korean Journal of Metals and Materials
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    • v.50 no.9
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    • pp.659-667
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    • 2012
  • Alloy 617 is a Ni-base superalloy and a candidate material for the intermediate heat exchanger (IHX) of a very high temperature gas reactor (VHTR) which is one of the next generation nuclear reactors under development. The high operating temperature of VHTR enables various applications such as mass production of hydrogen with high energy efficiency. Alloy 617 has good creep resistance and phase stability at high temperatures in an air environment. However, it was reported that the mechanical properties decreased at a high temperature in an impure helium environment. In this study, high-temperature corrosion tests were carried out at $850^{\circ}C-950^{\circ}C$ in a helium environment containing the impurity gases $H_2$, CO, and $CH_4$, in order to examine the corrosion behavior of Alloy 617. Until 250 h, Alloy 617 specimens showed a parabolic oxidation behavior at all temperatures. The activation energy for oxidation in helium environment was 154 kJ/mol. The SEM and EDS results elucidated a Cr-rich surface oxide layer, Al-rich internal oxides and depletion of grain boundary carbides. The thickness and depths of degraded layers also showed a parabolic relationship with time. A normal grain growth was observed in the Cr-rich surface oxide layer. When corrosion tests were conducted in a pure helium environment, the oxidation was suppressed drastically. It was elucidated that minor impurity gases in the helium would have detrimental effects on the high-temperature corrosion behavior of Alloy 617 for the VHTR application.