• Journal of Electrochemical Science and Technology
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• 제2권3호
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• pp.131-135
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• 2011

It is, in general, believed that during the activation process, the proton conductivity increases due to wetting effect and the electrochemical resistance reduction, resulting in an increase in the fuel cell performance with time. However, until now, very scant information is available on the understanding of activation processes. In this study, dominant variables that effect on the performance increase of membrane electrode assemblies (MEAs) during the activation process were investigated. Wetting, pore restructuring and active metal utilization were analyzed systematically. Unexpectedly, the changes for both ohmic and reaction resistance characterized by the electrochemical impedance spectroscopy (EIS) after initial wetting process were much smaller when considering the degree of cell performance increases. However, the EIS spectra represents that the pore opening of electrode turns into gas transportable structure more easily. The increase in the performance with activation cycles was also investigated in a view of active metals. Though the particle size was grown, the number of effective active sites might be exposed more. The impurity removal and catalytic activity enhancement measured by cyclic voltammetry (CV) could be a strong evident. The results and analysis revealed that, not merely wetting of membrane but also restructuring of electrodeand catalytic activity increase are important factors for the fast and efficient activation of the polymer electrolyte fuel cells.

• 한국진공학회지
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• 제8권3B호
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• pp.297-301
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• 1999

High quality CdTe single crystal for the solar cell fabrication was grown by vertical Bridgman method. The etch pits patterns of {111} surfaces of CdTe etched by Nakagawa solution was observed the {11} A composed of Cd atoms with typical triangle etch pits of pyramid mode. From the photoluminescence measurement of {111} A, we observed free exciton $(E_x)$ existing only high quality crystal and neutral acceptor bound exciton ($A^{\circ}$, X) having very strong peak intensity. Then, the full width at half maximum and binding energy of neutral acceptor bound exciton were 7 meV and 5.9 meV, respectively. By Haynes rule, and activation energy of impurity was 59meV. Therefore, the origins on impurity level acting as a neutral acceptor were associated Ag or Cu elements.

• Korean Chemical Engineering Research
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• 제54권6호
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• pp.838-846
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• 2016

산업체에서 많이 사용되는 연소공정은 배가스 성분의 회수나 제거를 필요로 한다. 최근에는 배가스로부터 이산화탄소를 회수하기 위해 제올라이트 13X를 사용하는 MBA(이동상흡착) 공정이 개발되었다. 본 연구에서는 제올라이트 13X에 대한 이산화탄소, 질소, 이산화황 및 수증기의 흡착 실험을 수행하여 흡착평형 및 고체입자 안으로의 흡착속도를 조사하였다. 여러 실험온도에서의 흡착데이터를 Langmuir, Toth, Freundlich 등온흡착식에 적용하여 각 흡착등온식의 파라미터를 구했고, 이론식에 의한 예측값과 실험데이터가 잘 일치함을 확인하였다. 이산화황과 수증기가 불순물로 존재할 경우에 주성분인 이산화탄소의 흡착량을 측정하였다. 이성분 흡착 데이터는 순수 성분에 대해 얻어진 파라미터를 extended Langmuir 등온흡착식에 적용하여 예측한 결과와 잘 일치하였다. 다만, $H_2O$ 불순물이 대략 ${\sim}10^{-5}H_2O\;mol/g$ zeolite 13X 이하 존재할 때에는 $CO_2$ 흡착량이 순수 $CO_2$의 흡착보다 오히려 소량 증가하는 현상이 관찰되었다. 실험으로 측정한 흡착속도를 구형 입자 확산모델에 적용하여 이산화탄소, 이산화황, 질소, 수분의 확산계수와 활성화에너지를 구했다. 미량의 불순물이 흡착되어있을 때는 이산화탄소나 이산화황의 확산계수가 줄어들었다. 본 연구에서 얻어진 파라미터 값들은 실제 흡착공정의 설계에 유용할 것이다.

• 수산해양기술연구
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• 제26권1호
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• pp.8-13
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• 1990

LiF(Mg, Cu, P) 단결정의 미시적 이완매개변수와 유전손실 등을 구하기 위하여 TSD glow곡선을 측정하고, 측정된 glow곡선을 초기상승법, 가열율법 및 전면적법으로 해석하였다. 쌍극자의 이완시간 $\tau$, pre-exponential인자 $\tau$하(o) 및 활성화에너지E는 각각 12.19S, 1.97$\times$10 상(-12)S 및 0.55eV이었다. 또한 TSD glow곡선을 사용하여 온도영역 300k~340k 사이에서 구한 LiF(Mg, Cu, P)단 결정의 tan$\delta$값은 약 3$\times$10 상(-2)이었다.

• 한국방사선학회논문지
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• 제14권5호
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• pp.563-575
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• 2020

본 연구 목적은 컨테이너 보안 검색용 선형가속기에서 발생하는 방사화 특성을 평가하는 것이다. 전산모사 설계는 첫째, 표적은 텅스텐(Z=74) 단일물질 표적 및 텅스텐(Z=74)과 구리(Z=29) 복합물질 표적으로 구성하였다. 둘째, 부채꼴(Fan beam) 조준기는 물질에 따라 납(Z=82) 단일 물질과 텅스텐(Z-74)과 납(Z=82)의 복합물질로 구성하였다. 셋째 선형가속기가 위치한 방(Room)의 콘크리트는 Magnetite type 및 불순물(Impurity)을 포함하였다. 연구 방법은 첫째, MCNP6 코드를 이용하여 선형가속기 및 구조물을 F4 Tally로 광중성자 플럭스(Flux)를 계산하였다. 둘째, MCNP6 코드에서 계산된 광중성자 플럭스를 FISPACT-II에 적용하여 방사화 생성물을 평가하였다. 셋째, 방사화 생성물의 비방사능을 통해 해체 평가를 진행하였다. 그 결과 첫째, 광중성자 분포는 표적에서 가장 높게 나왔으며, 조준기 및 10 cm 깊이의 콘크리트 순으로 나타났다. 둘째, 방사화 생성물은 텅스텐 표적 및 조준기에서 W-181, 불순물이 포함된 콘크리트에서 Co-60, Ni-63, Cs-134, Eu-152, Eu-154 핵종이 부산물(by-product)로 생성되었다. 셋째, 해체 시 텅스텐 표적은 90일 이후 자체 처분 허용 농도를 만족하는 것으로 보였다. 이러한 결과는 9 MeV 에너지에서의 광중성자 수율(Yield) 및 방사화 정도가 미미한 것으로 확인할 수 있었다. 하지만, 선형가속기 텅스텐 표적 및 조준기에서 발생한 W-181은 수리를 위한 분해 시 피폭의 영향을 줄 수 있을 것으로 생각된다. 따라서, 본 연구는 컨테이너 보안검색용 선형가속기 방사화된 부품관리에 관한 기초 자료를 제시한 것이다. 또한, 컨테이너 보안 검색용 선형 가속기 해체 시 자체처분을 만족하는 농도 기준을 입증하는데 활용될 수 있을 것으로 기대한다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.622-625
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• 2003

The dependence of stress-induced leakage current on LTPS TFTs was characterized in this study. The impacts of poly-Si crystallization, gate insulator, impurity activation, hydrogenation process and electrostatic discharge damage were investigated. It was observed more TFTs instable characteristic under those process-assisted processes. According to the LTPS roadmap, smaller geometric and low temperature process were the future trend and the stress-induced leakage current should be worthy of remark.

• Journal of Korean Vacuum Science & Technology
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• 제3권1호
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• pp.74-78
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• 1999

For a high efficient field emission display (FED), the specific vacuum conditions below 10-7 Torr should be required. However, because the FED has the geometrical restriction due to its micro size, the thin film getters can be proposed for chemical pumping as a way to reduce impurity gases in the panel. The thin film getters, developed by employing the coating of new materials such as NI or Pt on getter surface, can be used without any activation process and show the enhanced sorption characteristics. Especially, using the Zr (1${\mu}{\textrm}{m}$) thin film getters with the Pt surface layer, the significant gettering for various active gases could be achieved from 9$\times$10-5 Torr to 1$\times$10-6 Torr or below. this good sorption properties is mainly contributed to the surface coating layer which shows the catalytic effect for gas dissociation and protects the getter materials against oxidation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.159-160
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• 2006

$AgGaSe_2$ single crystal thin films grown by using hot wall epitaxy (HWE) system. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition ($E_x$) observable only in high quality crystal and neutral bound exciton ($D^{\circ}$,X) having very strong peak intensity. And, the full width at hall maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.163-166
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• 2001

The stochiometric mix of evaporating materials for the ZnGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa$_2$Se$_4$ single crystal thin films measured from Hall effect by van der Pauw method are 9.63x10$^{17}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively, From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa$_2$Se$_4$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr were 251.9 MeV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on ZnGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$_{x}$) existing only high quality crystal and neutral bound excition (A$^{0}$ ,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.on energy of impurity was 122 meV.

• 대한금속재료학회지
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• 제50권9호
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• pp.659-667
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• 2012

Alloy 617 is a Ni-base superalloy and a candidate material for the intermediate heat exchanger (IHX) of a very high temperature gas reactor (VHTR) which is one of the next generation nuclear reactors under development. The high operating temperature of VHTR enables various applications such as mass production of hydrogen with high energy efficiency. Alloy 617 has good creep resistance and phase stability at high temperatures in an air environment. However, it was reported that the mechanical properties decreased at a high temperature in an impure helium environment. In this study, high-temperature corrosion tests were carried out at $850^{\circ}C-950^{\circ}C$ in a helium environment containing the impurity gases $H_2$, CO, and $CH_4$, in order to examine the corrosion behavior of Alloy 617. Until 250 h, Alloy 617 specimens showed a parabolic oxidation behavior at all temperatures. The activation energy for oxidation in helium environment was 154 kJ/mol. The SEM and EDS results elucidated a Cr-rich surface oxide layer, Al-rich internal oxides and depletion of grain boundary carbides. The thickness and depths of degraded layers also showed a parabolic relationship with time. A normal grain growth was observed in the Cr-rich surface oxide layer. When corrosion tests were conducted in a pure helium environment, the oxidation was suppressed drastically. It was elucidated that minor impurity gases in the helium would have detrimental effects on the high-temperature corrosion behavior of Alloy 617 for the VHTR application.