• Analytical Science and Technology
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• v.17 no.4
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• pp.308-314
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• 2004

When the polymer was used for the guard raw materials of electronic device, the content of U, Th and their daughter nuclides were known as a factor of soft error. Because emitted alpha ray could be caused of mis-operation. And ionic impurities such as Cl, Fe, Na could shorten the device life-time. For the analysis of trace impurities in the polymer, neutron activation analysis(NAA) and ICP/AES have been studied. To improve the accuracy and sensitivity of the trace and ultratrace metallic impurities in the epoxy and phenol polymer, sample pretreatment method and optimum analytical condition of NAA were developed. Using the above method, U, Th and other 23 trace impurity elements were analyzed.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.215-219
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• 2001

Impurities removal from waste carbon black was carried out to produce high-grade carbon black. A lot of hydrophilic carbon black is produced as a byproduct of the hydrogen production process by flame decomposition of water. Due to its impurity content such as sulphur, iron, ash and etc., it can only be used as low-grade carbon or burnt out. High-grade hydrophilic carbon black is 3-5 times more expensive than oil-based carbon black because of its process difficulties and requires pollutant treatment. Hydrophilic carbon is normally used far conductive materials for batteries, pigment for plastics, electric wire covering, additives for rubber, etc.. In these applications, hydrophilic carbon must maintain its high purity. In this study magnetic separation, froth flotation and ultrasonic treatment were employed to remove impurities from the low-grade hydrophilic carbon black. As results, the ash, iron and sulphur content of product decreased to less than 0.01wt.%, 0.0lwt.% and 0.3wt.% respectively, and the surface area of product was about 930 $m^2$/g.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.187-190
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• 1997

The aluminum-magnesium (Al-Mg) aklloys have been proved to be an effective solvent for synthesis of cubic-phase boron nitride (cBN) from hexagonal-phase boron nitride (hBN) at the conditions of high pressures and high temperatures (HP/HT). Various kinds of hBN powders having different crystallinity have been tested for cBN synthesis with Al-Mg solvents. The conversion ratio from hBN to cBN and the shape of synthesized cBN crystals appeared to be affected strongly by chemical composition and added amount of Al-Mg solvents as well as crystallinity of BN powders. As the magnesium content increased in the Al-Mg solvents, the conversion ratio increased and the size of cBN crystals became larger. The crystal facets developed well in the specimens with solvents having high Mg content. It was observed that a hBNlongrightarrowcBN transformation occurred more easily in the specimens having well crystallized hBN powders. Amorphous BN having much $B_2O_3$ impurity exhibited a low threshold temperature for transformation to cBN, which was attributed to crystallization of amorphous BN to well crystallized hBN prior to transformation into cBN with help of $B_2O_3$.

• Fashion & Textile Research Journal
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• v.22 no.4
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• pp.523-533
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• 2020

Previous studies are used to examine cellulose content, degumming period, fiber quality, production yield, production cost, development limit of fiber according to physical, chemical, and microbial degumming methods. Three types of degumming methods are used to measure surface condition after degumming, necessity of additional degumming and degree of impurity removal. First, previous studies confirmed that the microbial degumming method is superior in terms of cellulose content, fiber quality, production yield, production cost, and fiber development possibility. Second, surface condition and the necessity of additional degumming were analyzed by SEM. The black skin binding material was removed in the case of the Sangnangyi and chemical degumming; however, it was insufficient and further degumming was required. Skin fiber binding material was removed in the case of microbial degumming and the surface was cleanest after degumming; in addition, most showed the form of yarn decomposition. The FT-IR spectrum determined the degree of removal of impurities and showed that it can utilize inherent physical properties as the best degumming method. The degree of removal of pectin and lignin by microbial degumming was cleanest with hemicellulose also reduced by microbial degumming.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.97-100
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• 1992

The Degradation mechanism of the ZnO-varistor fabricated with the content of a 3-Composition seed grain is discussed using the method of Thermally Stimulated Current (TSC). The spectra of TSC is measured in the temperature range of -130～270$^{\circ}C$ with a various forming electric fields E$\sub$f/, temperature T$\sub$f/ time tf, and a various rising rate of temperature. It is observed that there are appeared the peaks of ${\alpha}$, ${\alpha}$$_2$, ${\beta}$ and ${\gamma}$from high temperature in a TSC spectrum. It seems that ${\alpha}$$_1$ peak is due to thermal depolarization of donor ions forming the space charge in the depletion layer, and ${\alpha}$$_2$peak is due to the detrapping of trapped electrons in deep trap level of intergranular layer, and ${\beta}$ peak is due to the thermal exciting of carrier existing in the donor level of grain itself, and ${\gamma}$ peak is due to the thermal exciting of trapped carrier in all shallow trap site randomly distributed in the inner of sample and/or a intrinsic impurity existing in it.

• Transactions of the Korean hydrogen and new energy society
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• v.16 no.3
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• pp.290-295
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• 2005

For the application of fuel cell, the content and concentration of impurities in hydrogen stream must be classified. The purpose of this study is to provide analysis tool for the determination of impurities in hydrogen with ultra high purity. To produce UHT hydrogen, we purified hydrogen gas by both getter-based catridge and liquid-nitrogen soaked catridge. We compare two methods and propose new method to know about what is in hydrogen stream.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.89-92
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• 2012

The effect of organic impurities on the electrical properties of a neat epoxy resin was studied. 0.05, 0.5 and 1.0 phr of iso-propyl alcohol (IPA) and methylene chloride (MC) mixture (50/50 wt%) were used as impurities. The current density, volume resistance and impedance characteristics of the epoxy/IPA/MC systems were measured with a high voltage source meter and broadband dielectric spectroscopy. Glass transition temperature (Tg) was measured by a differential scanning calorimetry (DSC) and it was found that Tg decreased slightly with increasing IPA/MC content. It was also found that Tg values of the epoxy systems with various IPA/MC contents were closely related to the current density, volume resistance and impedance characteristics.

• Journal of the Korean institute of surface engineering
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• v.33 no.2
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• pp.115-125
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• 2000

TiN films were deposited onto Stellite 6B alloy (Co base) by the reactive magnetron sputter ion plating. As the bias increases, TiN film changes from columnar structure to dense structure with great hardness and smooth surface due to densification and resputtering by ion bombardment. The content of oxygen and carbon impurities in the TiN film decreases greatly when the substrate bias is applied. The preferred orientation of the TiN films changes from (200) to (111) with decreasing $N_2$/Ar ratio, and from (200) to (111) and then (220) with increasing the substrate bias. The change of the preferred orientation is discussed in terms of surface energy and strain energy which are related to the impurity contents and the ion bombardment damage. The hardness of the TiN film increases with increasing compressive stress generated in the film by virtue of ion bombardment. It becomes as high as up to 3500kgf/mm$^2$ when an appropriate substrate bias is applied.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.162-165
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• 1991

Oxygen behaviors in CZ-silicon wafer, grown by the Lucky Advanced Materials Inc. that is a pioneer of silicon material industries in Korea, were investigated to simulate effects on the device performance of oxygen, neglecting the effect of other impurity content, defects and thermal history. Silicon wafers were annealed through simulated 16K SRAM thermal cycle. As initial oxygen concentration increased up to 16.7ppma the amount of oxygen precipitation increased up to 10.6ppma and the bulk microdefect density increased up to $10.3{\times}10^3/mm^2$, but the depth of the denuded zone decreased to $5.0{\mu}m$

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.171-174
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• 1999

We have characterized solid solution Y$_{l-x}Ca_xBa_2Cu_3O_y$ (0${\le}$x${\le}$0.3) materials by measuring the XRD pattern, resistivity and hole concentrations, etc. As Ca concentration increases, T$_c$, is decreased monotonically because the hole concentration on the superconducting plane increases beyond the optimum region in the electronic phase diagram due to the hole transfer from the Cu-O chain to the CuO$_2$ plane. A very small amount of secondary phase have large effects on the analysis of oxygen content and hole concentration etc. The results before the correction of impurity phase are compared with those after the correction.