• Analytical Science and Technology
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• v.17 no.4
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• pp.308-314
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• 2004

When the polymer was used for the guard raw materials of electronic device, the content of U, Th and their daughter nuclides were known as a factor of soft error. Because emitted alpha ray could be caused of mis-operation. And ionic impurities such as Cl, Fe, Na could shorten the device life-time. For the analysis of trace impurities in the polymer, neutron activation analysis(NAA) and ICP/AES have been studied. To improve the accuracy and sensitivity of the trace and ultratrace metallic impurities in the epoxy and phenol polymer, sample pretreatment method and optimum analytical condition of NAA were developed. Using the above method, U, Th and other 23 trace impurity elements were analyzed.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.79-80
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• 1994

A systematic study on isoelectronic impurities in thin-film eletroluminescent devices (TFELD) has been made on the basis of the experimental analysis aimed at a survey for the blue-emitting materials. Codoping effects of isoelectronic impurities, such as oxygen(O), tellurium(Te), and lithium(Li), on the emissive characteristics of ZnS:Ce$^{3+}$ and ZnS:Tm$^{3+}$TFELD have been investigated by means of the X-ray diffraction studies, the Auger electron spectroscopy, the cathodoluminescent spectra, and the electroluminescent spectra. Experiment results reveal that oxygen codoping gives rise to an increase of the luminance, due to a suppression of the nonradiative energy transfer via sulfur vacancies Te codoping in ZnS:Ce$^{3+}$ TFELD result in a large change in the crystal field around Ce$^{3+}$ ions. Li codoping in ZnS:Tm$^{3+}$ TFELD causes the luminance to increase slightly, due to a lowering in the symmetry of Tm$^{3+}$ions. Likewise, the experimental results suggest strongly that an Auger-type enegy loss via lattece defects such an sulfur vacancies acts as a non-emissive in TFELD.ve in TFELD.

• Analytical Science and Technology
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• v.32 no.6
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• pp.225-232
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• 2019

Traceability establishment in chemical measurements is a like a linkage established through an unbroken chain from the measured results to the international system (SI) of units. The primary process for traceability establishment is the purity assignment of a target material to be measured. In this study, we studied the purity assignment of 17α-hydroxyprogesterone (17-OHP). The presence of 17-OHP is indicative of congenital adrenal hyperplasia (CAH) and it builds up due to the deficiency of 21-hydroxylase and 11β-hydroxylase enzyme in the human blood. The purity assignment of 17-OHP was performed by the mass balance method, in which the impurities are categorized into four classes: total related structural impurities, water, residual organic solvents, and nonvolatiles/inorganics. The total related structural impurities were characterized by HPLC-UV; water content was determined by Karl-Fisher coulometer; and the total residual solvents and nonvolatiles/inorganics were determined by TGA. The purity of 17-OHP from a commercial manufacturer was calculated as 993.30 mg/g, and the expanded uncertainty was 0.58 mg/g. The proposed method was validated by uncertainty evaluation and comparing with the actual value of purity.

• Journal of Power System Engineering
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• v.7 no.4
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• pp.25-30
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• 2003

Hydrocyclone has been widely used for the solid-Liquid separation in many industrial sites because of its comparatively preferable applications that can be applied to wide-range panicle sizes. If seawater with impurities flows through pumps or heat exchanger, it might cause an decrease in efficiency of cooling system. In this paper, we have suggested solid methods of separating impurities from seawater in the cooling system by using a Hydrocyclone. The effects of design factors as solid concentration, cyclone inlet pressure, flow rate and diameter of underflow on the seperating performance of the Hydrocyclone were investigated. The results from the study are summarized as follows: 1) In proportion to the increase of solid concentration, the efficiency of solid-liquid separation is improved. 2) According as the cyclone inlet pressure increases the efficiency of separation is improved. Conclusively, this research suggested that the Hydrocyclone will be used as a pre-treatment system of cooling water in ships, and eventually prevent unexpected accidents in engine systems.

• Journal of the Korean Chemical Society
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• v.42 no.5
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• pp.526-530
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• 1998

Analysis of trace impurities in the gases has been very important with the development of semi-conductor related industry. Particularly, the contamination of the gas handling systems in a semi-conductor plant by the air has been a trouble to the manufacturers. Thus, the analysis of the air components in the system has been a task to the analysts. In this study, we report the analysis data with a expanded uncertainty for the trace impurities of nitrogen and argon in the bulk helium and hydrogen. All data show a good correspondence, exhibiting reliable statistical error ranges.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.1-5
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• 2000

As the semiconductor devices are miniaturized, the number of the unit cleaning processes increases. In order to processes by conventional RCA cleaning process, the consumption of volume of liquid chemical and DI water became huge. Therefore, the problem of environmental issues are evolved by the increased consumption of chemicals. To resolve this matter, an advanced cleaning process by Electrolyzed Water was studied in this work. The electrolyzed water was made by an electrolysis equipment which was composed of three chambers of anode, cathode, and middle chambers. In the case of electrolyzed water with electrolytes in the middle chamber, oxidatively acidic water of anode and reductively alkaline water of cathode were obtained. The oxidation/reduction potentials and pH of anode water and cathode water were measured to be +l000mV and 4.8, and -530mV and 6.3, respectively. The Si-wafers contaminated with metallic impurities were cleaning with the electrolyzed water. To analysis the amounts of metallic impurities on Si-water surfaces, ICP-MS(Inductively Coupled Plasma-Mass spectrometer) was introduced. From results of ICP-MS measurements, it was concluded that the ability of electrolyzed water was equivalent to that of the conventional RCA cleaning.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.482-489
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• 1999

AC PDP(P1asma Display Pane1)s use the mixture of inert gases to generate a discharge inside the display pixels. Impurities such as CO, $CO_2$ and OH inside discharge region may deteriorate the characteristics of PDP operation during long life time of PDP. Electro-negative gas such as CO can cause the sustain pulse amplitude to rise by attaching electrons which will play an important role in the earlier stage of the discharge. MgO film is used to protect the dielectric layer in AC PDP, and is in contact with the free space of display pixel where it is filled with the inert gas mixture. So, MgO film can be a main source of impurities. In this experiment, we observed the change of impurity generation of various MgO films which were deposited by different methods, by using QMS. (quadropole mass spectrometer) The main impurites were $H_2$, CO and $CO_2$. And with the comparison of the TPD (temperature programmed desorption) result, it can be understood that impurity gases are generated by sputtering of MgO surface not by outgassing. Deposition method had effects on the characteristics of the impurity generation. The MgO film manufactured by e-beam evaporation generated more amount of impurity gases than the MgO films manufactured by sputtering or ion-plating. And also heat treatment of MgO film after deposition decreased the magnitude of impurity gas generation.

• Corrosion Science and Technology
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• v.17 no.3
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• pp.116-122
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• 2018

The secondary coolant of a nuclear power plant has small amounts of various impurities (S, Pb, and Cl, etc.) introduced during the initial construction, maintenance, and normal operation. While the concentration of impurities in the feed water is very low, the flow of the cooling water is restricted, so impurities can accumulate on the Top of Tubesheet (TTS). This environment is chemically very complicated and has a very wide range of pH from acidic to alkaline. In this study, the characteristics of the oxide and the mechanism of stress corrosion cracking (SCC) are investigated for Alloy 690 TT in alkaline solution containing Pb, Cl, and S. Reverse U-bend (RUB) specimens were used to evaluate the SCC resistance. The test solution comprises 3m NaCl + 500ppm Pb + 0.31m $Na_2SO_4$ + 0.45m NaOH. Experimental results show that Alloy 690 TT of the crevice environment containing Pb, S, and Cl has significant cracks, indicating that Alloy 690 is vulnerable to stress corrosion cracking under this environment.

• Transactions of the Korean hydrogen and new energy society
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• v.24 no.4
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• pp.288-294
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• 2013

This gas analysis data come from the hydrogen which is produced by proton exchange membrane. Main impurities of hydrogen are methane, oxygen, nitrogen, carbon monoxide, and carbon dioxide. The concentration of impurities is ranged between 0.0191 to $315{\mu}mol/mol$ for each impurity. Methane contamination is believed from the electrode reaction between carbon doped electrode and produced hydrogen. Nitrogen contamination should take place the sampling process error, not from PEM hydrogen Production system.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.31-43
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• 1993

Thermal behavior and $O_{2}$ plasma effects on residue and penetrated impurities formed by reactive ion etching (RIE) in CHF$_{3}$/C$_{2}$F$_{6}$ have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) techniques. Decomposition of polymer residue film begins between 200-300.deg. C, and above 400.deg. C carbon compound as graphite mainly forms by in-situ resistive heating. It reveals that thermal decomposition of residue can be completed by rapid thermal anneal above 800.deg. C under nitrogen atmosphere and out-diffusion of penetrated impurities is observed. The residue layer has been removed with $O_{2}$ plasma exposure of etched silicon and its chemical bonding states have been changed into F-O, C-O etc.. And $O_{2}$ plasma exposure results in the decrease of penetrated impurities.