• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.1
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• pp.70-78
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• 2000

In applying high-${\underline{T_c}}$ superconducting material to microwave devices, Uncertainty of electromagnetics of high-${\underline{T_c}}$ superconductor(HTS) and the temperature dependence of the substrate fits with HTS thin film cause difficulty in realization of such antenna for industrial applications. It must be noted to characteristic the HTS antenna in contrast with normal conducting counterpart for this real application. In this paper, a comparative study between HTS microstrip antennas and gold antennas was reported in terms of the return loss, the characteristic impedance, efficiency, and other various characteristics. HTS thin films were $YBa_2Cu_3O_{7-x}$ (YBCO) on MgO substrates. Superconducting microstrip antennas used in this work were to directly inset a microstrip transmission line into the 50 ${\Omega}$ region of the radiating patch. Measurement results of HTS antennas and gold antennas showed that usable antennas can be made using this architecture.

• Journal of the Korean Society for Nondestructive Testing
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• v.24 no.5
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• pp.508-517
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• 2004

We described a near-field scanning microwave microscope which uses a high-quality dielectric resonator with a tunable screw. The operating frequency is f=4.5 5GHz. The probe tip is mounted in a cylindrical resonant cavity coupled to a dielectric resonator We developed a hybrid tip combining a reduced length of the tapered part with a small apex. In order to understand the function of the probe, we fabricated three different tips using a conventional chemical etching technique and observed three different NSMM images for patterened Cr films on glass substrates. We measured the reflection coefficient of different metal thin film samples with the same thickness of 300m and compared with theoretical impedance respectly. By tuning the tunable screw coming through the top cover, we could improve sensitivity, signal-to-noise ratio, and spatial resolution to better than $1{\mu}m$. To demonstrate the ability of local microwave characterization, the surface resistance of metallic thin films has been mapped.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1703-1706
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• 1996

The purpose of this study is to research and develop polypyrrole(PPy) positive for thin film rechargeable lithium battery. We investigated cyclic voltammetry, AC impedance response and charge/discharge cycling of PPy/SPE/Li cells as a function of temperature. The redox capacity of $PPy/CF_{3}SO_{3}$ film was the most large. The discharge capacity of PPy/SPE/Li cell with $PPy/CF_{3}SO_{3}$ film was higher than those of $PPy/ClO_{4}$ and $PPy/AsF_6$ films at all cycles. The energy density of PPy/SPE/Li cells during 1st cycle was 73, 90 and 101Wh/kg at $25^{\circ}C$, $45^{\circ}C$ and $60^{\circ}C$, respectively. The improvement of energy density is due to reduction of charge-transfer resistance associated doping-undoping process in PPy film with Increasing temperature. $PPy/CF_{3}SO_{3}$ film shows a good property on charge/discharge cycling in PEO-$LiClO_4$-PC-EC electrolyte.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.3
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• pp.70-74
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• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1745-1747
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• 2004

In order to anticipate gradual increase of fault current in electric power systems, current limiting technology and current limiting device has been investigated for a long time. But the commercial use of current limiting device was delayed due to the lack of effective method to insert impedance to the elective power systems without loss and surplus defects. However, novel current limiting device, which use superconducting materials, was considered as a dream technology to be applied in a distribution and transmission lines. LG Industrial systems and KERPI started to investigate resistive type superconducting fault current limiters in order to develop 154kV fault current limiters and this year, we succeed to test 3 phase 6.6kV/200A fault current limiters. Based on these achievements, 24kV superconducting fault current limiters will be realized withing 3 years which could be tested in a real fields. In this paper, the developments of fault current limiting module which use YBCO thin films, cryogenic systems, the structure and construction of 3 phase fault current limiters and finally the test results of 6.6kV superconducting fault current limiters will be introduced.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.108-108
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• 2000

급증하는 무선통신 정보수요는 특히, 고주파대역 (300NHz-300GHz)에서 사용되는 공진기, 필터, 발진기 등과 같은 소자의 품질향상을 요구하고 있다. 고주파용 유전체 중 ZrTiO4 는 $\alpha$-PbO2 계열의 사방정구조를 갖고 있는 유전체로서 높은 유전율 ($\varepsilon$=40)과 높은 품질계수 (Q=1/tan$\delta$=4700 at 7GHz)를 갖고 있고, Sn 첨가시 0ppm/$^{\circ}C$의 공진주파수 온도계수를 얻을 수 있다고 보고되어 있다. 본 연구에서는 약 110$0^{\circ}C$ 이상에서 안정한 상으로 존재하는 ZrTiO4를 저온에서 증착하여 준안정한 상태로 결정화되게 한후, 유전손실 (tan$\delta$)과 유전율($\varepsilon$)을 측정하였다. 또한 증착온도와 열처리과정에 따른 박막의 us형 (Strain) 정도의 변화를 X-선 회절결과로부터 분석하였으며 이를 측정된 유전특성 값과 비교하였다. ZrTiO4 박막은 DC magnetron reactive sputter로 Zr과 Ti 타겟으로부터 high phosphorous doped Si (100) 기판위에 증착하였다. 압력은 4mTorr로 유지하고 박막의 화학양론적 조성비를 맞추기 위해 각 타겟에 가해지는 power는 Zr/Ti=500W/650W로 고정하고, 반응가스의 비율을 Ar/O2=17sccm/3.5sccm으로 유지하여 박막내에 인입되는 산소량을 제어하였다. 증착 직후와 열처리 후의 박막특성을 비교하기 위해 증착온도를 상온에서부터 $600^{\circ}C$까지 변호시키고 증착후 각각의 시편을 80$0^{\circ}C$ 산소분위기에서 2시간동안 열처리하여 시편을 준비하였다. 박막의 상형성 여부와 결정성변화는 $ heta$-2$\theta$X-선 회절법을 사용하여 조사하였고, EPMA를 이용하여 박막의 조성을 확인하였다. 유전특성의 측정을 위해 백금 상부전극을 증착한 후, impedance analyzer를 이용하여 100kHz 영역에서의 유전손실을 측정하고, 측정된 정전용량과 박막의 두께로부터 유전율을 계산하였다. ZrTiO4 박막은 증착온도 20$0^{\circ}C$ 이상에서 결정성을 보이기 시작했으며, 열처리 이후에는 상온에서 비정질이었던 시편이 $650^{\circ}C$ 이상의 온도에서 결정화되기 시작하였다. 증착온도에 따라 유전손실은 0.038에서 0.017 정도로 감소하는 경향을 나타냈으며, 각각 열처리에 의해서 0.034, 0.005 정도로 다시 감소하였다. 박막의 유전율은 약 35 정도의 값을 나타내었으며 X-선 회절 data로부터 분석한 박막의 변형은 증온도에 따라 7.2%에서 0.04%로 감소하였고 이 이경향은 유전손실은 감소경향과 일치하였다.