• Title/Summary/Keyword: Impedance Signal

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Design of a Bias Circuit for Reducing Memory Effects (Memory Effect를 줄이기 위한 바이어스 회로의 설계)

  • Kang, Sanggee
    • Journal of Satellite, Information and Communications
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    • v.12 no.4
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    • pp.115-119
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    • 2017
  • Intermodulation distortion degrades the S/N(signal-to-noise) of the original signal and also affects the adjacent channels. Intermodulation distortion is mainly caused by the nonlinear characteristics of the power amplifier. If the power amplifier with nonlinear characteristics has a memory effect, the intermodulation distortions occurred in the power amplifier are generated in various and complex forms. The predistorter is used as a way to improve intermodulation distortions. In order to efficiently utilize the performance of the predistorter, the memory effect of the power amplifier must be reduced. In this paper, we describe the design method of bias circuit to reduce the memory effect in power amplifiers. To reduce the memory effect, the bias circuit must have a high impedance for the signal and a low impedance for the envelope(modulating signal) and the second harmonic component of the signal. To verify the performance of the bias circuit designed considering the memory effect, a power amplifier operating at 170 ~ 220MHz was designed and implemented. The designed bias circuit has a large impedance in the operating frequency band and low impedance in the envelope signal and the second harmonic of the signal. As a result of the performance measurement, it was found that the asymmetric intermodulation distortion component is improved by 3.7dB.

Modified Principal Component Analysis for Real-Time Endpoint Detection of SiO2 Etching Using RF Plasma Impedance Monitoring

  • Jang, Hae-Gyu;Kim, Dae-Gyeong;Chae, Hui-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.32-32
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    • 2011
  • Plasma etching is used in microelectronic processing for patterning of micro- and nano-scale devices. Commonly, optical emission spectroscopy (OES) is widely used for real-time endpoint detection for plasma etching. However, if the viewport for optical-emission monitoring becomes blurred by polymer film due to prolonged use of the etching system, optical-emission monitoring becomes impossible. In addition, when the exposed area ratio on the wafer is small, changes in the optical emission are so slight that it is almost impossible to detect the endpoint of etching. For this reason, as a simple method of detecting variations in plasma without contamination of the reaction chamber at low cost, a method of measuring plasma impedance is being examined. The object in this research is to investigate the suitability of using plasma impedance monitoring (PIM) with statistical approach for real-time endpoint detection of $SiO_2$ etching. The endpoint was determined by impedance signal variation from I-V monitor (VI probe). However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ film on Si wafer is etched by fluorocarbon plasma on inductive coupled plasma (ICP) etcher. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance analysis is compared with optical emission spectroscopy (OES). From impedance data, we tried to analyze physical properties of plasma, and real-time endpoint detection can be achieved.

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Analysis of Bobbin Probe Signal in Steam Generator Tube with Bulge Defect (증기발생기 세관의 Bulge결함에 대한 보빈프로브 신호해석)

  • Lee, Hyang-Beom
    • Proceedings of the KIEE Conference
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    • 2003.07b
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    • pp.702-704
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    • 2003
  • In this paper, analysis of bobbin probe signal in steam generator tube with bulge defect on CE system 80 nuclear power plant is represented. The CE system 80 steam generator is adopted in ULJIN-4 nuclear power plant. From Maxwell's equation, the electromagnetic governing equation for eddy current problem is derived and by performing the finite element formulation the 3-dimensional finite element code with brick element is developed. For the ease of the comparison the numerical results with experimental ones, the calculated signals are adjusted by using the ASME standard 100[%] through hole signal. For analysis of the effect of variation of the bulge depth on the impedance signal 0.2[mm] and 0.4[mm] depth of bulge defect signals are calculated and analyzed. As the depth of the bulge defect is increased, the magnitude of the signal is increased, too. But the rate of the increment of the signal is less than that of the depth of defect. From the result of this paper, we can obtained the information of the effect of bulge defect on the impedance signal.

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Measurement method of the signal transfer characteristic(S21) of the impedance transformer (임피던스 변환회로의 신호 전달특성(S21) 측정 방법)

  • Park, Ung-hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.23 no.10
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    • pp.1282-1289
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    • 2019
  • In order to measure the transfer characteristic(S21) of the impedance transformer, two impedance transformers must be symmetrically connected. However, the transfer characteristic of two symmetrically connected impedance transformers is influenced by the length of the intermediate connection line. This paper theoretically examines closely the length of the intermediate connection line to obtain the accurate transfer characteristic of the impedance transformer. The electrical length of the intermediate connection line for obtaining the accurate transfer characteristic of the 4:1(50-Ω:12.5-Ω) impedance transformer is calculated about 45°. Using the calculated length of the connection line, The λ/4-microstrip impedance transformer is fabricated at 1 GHz to measure the transfer characteristic. The symmetrically connected impedance transformer is measured the reflection characteristic(S11) of -40.64dB and the transfer characteristic(S21) of -0.154dB at 0.980GHz. This value is approximately equal to the theoretical calculated 987MHz center frequency and -0.15dB transfer loss value of the λ/4-microstrip impedance transformer.

A Reconfigurable Directional Coupler Using a Variable Impedance Mismatch Reflector for High Isolation

  • Lee, Han Lim;Park, Dong-Hoon;Lee, Moon-Que
    • Journal of electromagnetic engineering and science
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    • v.16 no.4
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    • pp.206-209
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    • 2016
  • This letter proposes a reconfigurable directional coupler that uses a variable impedance mismatch reflector to achieve high isolation characteristics in the antenna front end. The reconfigurable coupler consists of a directional coupler and a single-pole four-throw (SP4T) switch with different load impedances as a variable load mismatch reflector. Selection of the load impedance by the reflector allows cancellation of the reflected signal due to antenna load mismatch and the leakage from the input to isolation port of the directional coupler, resulting in high isolation characteristics. The performance of the proposed architecture in separating the received (Rx) signal from the transmitted (Tx) signal in the antenna front end was verified by implementing and testing the reconfigurable coupler at 917 MHz for UHF radio-frequency identification (RFID) applications. The proposed reconfigurable directional coupler showed an improvement in the isolation characteristics of more than 20 dB at the operation frequency band.

Development of the Measurement Tool and Impedance Test Method for the Signal fidelity in PCB Tracks (PCB 트랙의 신호충실성을 위한 임피던스 계산 방법 및 측정 툴 개발)

  • 라광열;유재현;김철기;이재경;남지현;윤달환
    • Proceedings of the IEEK Conference
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    • 2002.06e
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    • pp.51-54
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    • 2002
  • As digital systems continue to use components with faster edge rate and clock speeds, transmission of the digital information can take place many troubles. The increasing requirement for controlled impedance PCBs becomes both a critical success factor and a design challenge. Especially, the noise sources in digital system include the noise in power supply, ground and packaging due to simultaneous switching of signal, signal reflections and distortions on single and multiple transmission lines. This paper simulates the tracks controlled impedance with the test coupon. So, it can saves the design time and supports the economical PCB design.

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Selection of mother wavelet for Low Impedance Fault Detection (Low Impedance Fault 검출을 위한 최적 마더 웨이브렛의 선정)

  • Byun, S.H.;Kim, C.H.;Kim, I.D.;Nam, K.N.
    • Proceedings of the KIEE Conference
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    • 1997.07c
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    • pp.1012-1014
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    • 1997
  • This paper introduces wavelets and shows that they may be efficient and useful for the detection of general faults in power system. The wavelet transform of a signal consists in measuring the "similarity" between the signal and a set of translated and scaled versions of a "mother wavelet". The "mother wavelet" is a chosen fast decaying oscillation function. A number of mother wavelet for signal analysis have been proposed and some of them are in use in fault detection. However, the performance of fault detection depend on used mother wavelet. In the present paper a comparative evaluation of different mother wavelets for low impedance fault detection is performed. The discussion is focused in well-known mother wavelet based wavelet transform. Several families of wavelets are used to analyse transient earth fault signals in a 345kV model system as generated by EMTP.

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Signal-to-noise Ratio Improvement of a FM Antenna Using a Non-Foster Circuit (Non-Foster 회로를 이용한 FM 안테나의 신호 대 잡음비 개선)

  • Park, Hongwoo;Kahng, Sungtek;Kim, Hongjoon
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.2
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    • pp.329-334
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    • 2016
  • In this paper, we demonstrate a Non-Foster matching method for an electrically small antenna to improve the signal-to-noise ratio (SNR) of communication link. For the experiment, we used a general FM antenna whose resonance frequency is about 52-57 MHz and a floating type Linvill negative impedance converter(NIC)-based circuit as a Non-Foster matching element. By implementing the Non-Foster circuit to cover FM band, we can achieve a wide bandwidth matching covers 40-200 MHz. Our measurement shows 3-7 dB improvement of SNR for the same bandwidth though there are several spikes which means no improvement of SNR in the band.

Fabrication of High Precision Pre-amplifier for EEG Signal Measurement and Development of Auto Classification System (뇌파신호 측정을 위한 고성능 전치증폭기 제작 및 자동 신호분류 시스템 개발)

  • 도영수;장긍덕;남효덕;장호경
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.409-412
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    • 2000
  • A high performance EEG signal measurement system is fabricated. It consists of high precision pre-amplifier and auto identification bandwidth unit. High precision pre-amplifier is composed of signal generator, signal amplifier with a impedance converter, body driver and isolation amplifier. The pre-amplifier is designed for low noise characteristics, high CMRR, high input impedance, high IMRR and safety, Auto identification bandwidth unit is composed of AD-converter and PIC micro-controller for real time processing EEG signal. The performance of EEG signal measurement system has been shown the classified bandwidth through the clinical demonstrations.

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Rejecting Interference in Electrical Impedance Measurements by Using Spread Spectrum Technique (전기 임피던스를 측정할 때 외부 간섭을 제거하기 위한 대역확산 기술의 적용)

  • Kang, Hyun-Kag;Hwang, In-Duk
    • The Transactions of the Korean Institute of Electrical Engineers D
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    • v.55 no.4
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    • pp.195-197
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    • 2006
  • When we measure electrical impedance of a small object, such as an electronic component, external interference or jamming signal can be rejected by shielding the object. However, when we measure impedance of a large object, such as a human body, shielding is not easy and severe error due to the external interference could be introduced. In this paper, spread spectrum technique applicable to bioimpedance measurements for rejecting external interference without shielding is introduced. The improvement in signal-to-jamming ratio by the spread spectrum technique was experimentally confirmed.