• Title/Summary/Keyword: Impedance Measurement

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Comparison Analysis of Soil Structure Methods for Deciding the Position of a Deeply Driven Ground Rod (심매설 접지봉의 위치결정을 위한 대지구조 분석 방법들의 비교분석)

  • Eom, Ju-Hong;Cho, Sung-Chul;Lee, Tae-Hyung;Lee, Bok-Hee
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.21 no.7
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    • pp.37-45
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    • 2007
  • Recently, there has been an increase of the use of ground system for lightning protection called deeply driven grounding electrode. In the case of deeply driven grounding electrode, the rod electrode is equipped perpendicularly and deeply, therefore, it has a benefit to have less restriction of place compared to mesh grid electrode. However, ground impedance is largely changed by the local earth resistivity, so it requires a detailed analysis of the ground structure when planning. The measurement of earth resistivity by existing Wenner's method has been widely used, however, this method can not find out a change in the local ground resistance and it shows the result outwardly to be difficult to estimate exact depth. Therefore, this study analyzed the ground structure as 2-D image using 96 channels measurement facility and tried to analyze change in the local ground resistance and depth of the ground in order to design a deeply driven electrode effectively for lightning protection. It used Wenner alpha method dipole-dipole method and Schlumberger method for 2-D image analysis of the ground resistivity ma based on, it the result was compared with the ground structure analyzed with the result using the CDEGS and Wenner 1-D method.

Traveling-wave Ti:LiNbO3 optical modulator capable of complete switching (완전 스위칭이 가능한 Ti:LiNbO3 진행파 광변조기)

  • 곽재곤;김경암;김영문;정은주;피중호;박권동;김창민
    • Korean Journal of Optics and Photonics
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    • v.14 no.5
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    • pp.545-554
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    • 2003
  • Design of the optical modulator composed of a three-waveguide coupler and CPW traveling-wave electrodes was carried out. Switching phenomena of three-waveguide couplers were analyzed by using the coupled mode theory, and the coupling-lengths of the devices were calculated by means of the FDM. CPW traveling-wave electrodes were analysed by the CMM and SOR simulation technique in order to find the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electrolyte technique. The fabricated modulator chip was end-polished, pig-tailed and packaged in a brass mount with K-connector. The insertion loss and the switching voltage of the optical modulator were about 4㏈ and 19V, respectively. Network analyzer was used to obtain the S parameter and the corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted to be Z$_{c}$= 45 Ω, N$_{eff}$=2.20, and $\alpha$$_{0}$=0.055/cm√GHZ. The measured optical response R($\omega$) was compared with the theoretically estimated one, showing both responses agree well. The measurement results revealed that 3㏈ bandwidth turned out to be about 13 GHz.

Ti:LiNbO3 three-waveguide type traveling-wave optical modulator; outer fed, anti-symmetrical Detuning (Ti:LiNbO3 세 도파로형 진행파 광변조기;바깥입사, 반대칭 Detuning)

  • 이우진;정은주;피중호;김창민
    • Korean Journal of Optics and Photonics
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    • v.15 no.4
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    • pp.375-384
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    • 2004
  • Switching phenomenon of a three-waveguide optical coupler was analyzed by using the coupled mode theory, and the coupling-length of the device was calculated by means of the FDM. CPW traveling-wave electrodes were designed by the CMM and SOR simulation techniques so as to satisfy the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on a z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electroplating technique. Insertion loss and switching voltage of the optical modulator were about 4 ㏈ and 15.6V. Network analyzer was used to obtain S parameters and corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted as such Z$_{c}$=39.2 $\Omega$, Neff=2.48, and a0=0.0665/cm((GHz) (1/2)). The measured optical response R(w) was compared with the theoretically estimated and both responses were shown to agree well. The measurement results revealed that the ㏈ bandwidth turned out to be about 13 GHz.

The Electrical Characteristics of the Grain Boundary in a $BaTiO_{3}$ PTC Thermistor ($BaTiO_{3}$ PTC 서미스터 입계의 전기적인 특성)

  • Kwon, Hyuk-Joo;Lee, Jae-Sung;Lee, Yong-Soo;Lee, Dong-Kee;Lee, Yong-Hyun
    • Journal of Sensor Science and Technology
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    • v.1 no.1
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    • pp.67-75
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    • 1992
  • PTC thermistor has been fabricated with as-received $BaTiO_{3}$ powder and its electrical properties were investigated. The resistivity of the PTC thermistor was measured at $20^{\circ}C$ intervals from $20^{\circ}C$ to $200^{\circ}C$. The electrical characteristics of the PTC thermistor are determined by the ac complex impedance analysis. The average grain size measured with a scanning electron microscope increased from $3.8{\mu}m$ to $8.8{\mu}m$ with increasing sintering temperature between $1280^{\circ}C$ and $1400^{\circ}C$. The maximum resistivity jump was $4{\times}10^{5}$. The bulk resistivity of the thermistor sintered above $1340^{\circ}C$ decreased with increasing temperature of the measurement. The grain boundary resistance increased exponentially, the grain boundary capacitance decreased, and the built-in potential at the grain boundary increased with increasing temperature of the measurement. The charge densiy at the grain boundary increased with increasing temperature up to $110^{\circ}C$, which leveled off with further increase in measuring temperature.

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Acoustic Performance Evaluation of Noise Barriers Installed Adjacent to Rails and Suggestion of Approximation Formula for the Prediction of Insertion Loss (근접 방음벽의 음향성능평가 및 삽입손실 예측을 위한 근사식의 제안)

  • Yoon, Je Won;Jang, Kang Seok;Cho, Yong Thung
    • Journal of the Korean Society for Railway
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    • v.19 no.5
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    • pp.629-637
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    • 2016
  • In this paper, an investigation was conducted to evaluate the acoustic performance of low height noise barriers installed adjacent to rails; an easy-to-use approximation formula was suggested for the evaluation of insertion loss (IL), instead of using the boundary element method. At first, the acoustic performance of the low height noise barriers was measured in an anechoic chamber using a scaled down model; the overall IL according to the source location was analyzed with the equivalent IL contour line. Using the measurement results obtained from the scaled down model, an approximation formula was suggested for the IL of low height noise barriers having various shapes. Also, the prediction program was validated through a comparison between the actual measurement results in the anechoic chamber and the prediction results. Finally, using the prediction program, an approximation formula for IL was suggested for the low height noise absorption barriers. Considering the frequency characteristics of the noise sources of the train, the absorptive low height noise barriers have a 'ㄱ' type shape, a height of 1.0m, and a length of 0.5m when they are installed on the structure gauge for the train.

Photoelectrochemical Properties of Gallium Nitride (GaN) Photoelectrode Using Cobalt-phosphate (Co-pi) as Oxygen Evolution Catalyst (산소발생용 Cobalt-phosphate (Co-pi) 촉매를 이용한 Gallium Nitride (GaN) 광전극의 광전기화학적 특성)

  • Seong, Chaewon;Bae, Hyojung;Burungale, Vishal Vilas;Ha, Jun-Seok
    • Journal of the Microelectronics and Packaging Society
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    • v.27 no.2
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    • pp.33-38
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    • 2020
  • In the photoelectrochemical (PEC) water splitting, GaN is one of the most promising photoanode materials due to high stability in electrolytes and adjustable energy band position. However, the application of GaN is limited because of low efficiency. To improve solar to hydrogen conversion efficiency, we introduce a Cobalt Phosphate (Co-pi) catalyst by photo-electrodeposition. The Co-pi deposition GaN were characterized by SEM, EDS, and XPS, respectively, which illustrated that Co-pi was successfully decorated on the surface of GaN. PEC measurement showed that photocurrent density of GaN was 0.5 mA/㎠ and that of Co-pi deposited GaN was 0.75 mA/㎠. Impedance and Mott-Schottky measurements were performed, and as a result of the measurement, polarization resistance (Rp) and increased donor concentration (ND) values decreased from 50.35 Ω to 34.16 Ω were confirmed. As a result of analyzing the surface components before and after the water decomposition, it was confirmed that the Co-pi catalyst is stable because Co-pi remains even after the water decomposition. Through this, it was confirmed that Co-pi is effective as a catalyst for improving GaN efficiency, and when applied as a catalyst to other photoelectrodes, it is considered that the efficiency of the PEC system can be improved.

Sensitivity Analysis and Estimation of the Depth of Investigation in Small-Loop EM Surveys (소형루프 전자탐사의 감도분석 및 가탐심도 추정)

  • Song Yoonho;Chung Seung-Hwan
    • Geophysics and Geophysical Exploration
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    • v.5 no.4
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    • pp.299-308
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    • 2002
  • We have derived an analytical expression for the sensitivity of the frequency domain small-loop electromagnetic (EM) surveys over a two-layer earth in order to estimate the depth of investigation with an instrument having the source-receiver separation of about 2 m. We analyzed the sensitivities to the lower layer normalized by those to the upper half-space and estimated the depth of investigation from the sensitivity analyses and the mutual impedance ratio. The computational results showed that the in-phase components of the sensitivity to the lower layer dominates those to the upper layer when the thickness of the upper layer is less than 20 m, while the quadrature components are not sensitive to the lower layer over the entire frequency range. Hence we confirmed that the accurate measurement of the in-phase component is essential to increase the depth of investigation in the multi-frequency small-loop EM survey. When conductive basement of 10 ohm-m underlies the upper layer of 100 ohm-m, an accurate measurement of the in-phase components ensures the depth of the investigation more than 10 m even accounting a noise effect, from which we conclude that the small-loop EM survey is quite effective in imaging the conductive plume down to a considerable depth. On the other hand, in the presence of the resistive basement of 1,000 ohm-m, the depth of investigation may not exceed 5 m considering the instrumental accuracy, which implies that the application of the small-loop EM survey is not recommended over the resistive environment other than detecting the buried conductor.

Fabrication of a PMN-PZT needle hydrophone for photoacoustic imaging (광음향 영상화를 위한 PMN-PZT 바늘형 수중청음기 제작)

  • Fan, Xiaofeng;Cao, Yonggang;Ha, Kanglyeol;Kim, Moojoon;Kang, Hyun Wook;Oh, Junghwan
    • The Journal of the Acoustical Society of Korea
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    • v.35 no.3
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    • pp.175-182
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    • 2016
  • For application to several MHz photoacoustic imaging systems, a needle hydrophone was designed and fabricated by using PMN-PZT piezoelectric single crystal, and its characteristics were evaluated through comparison with a commercial PVDF(Polybinylidene Fluoride) hydrophone of which receiving sensitivity is known. The simulation using the KLM model results show that the peak receiving impulse response for $50{\Omega}$ terminating impedance of the fabricated hydrophone is -261.6 dB re $1V/{\mu}Pa$ and the frequency response is relatively flat over 2 ~ 12 MHz with fluctuation less than 5 dB. The measurement results using tone burst signals also show that it has higher (ave. 10.9 dB) sensitivity than the commercial hydrophone in 2 ~ 8 MHz, and the receiving sensitivity of $-255.8{\pm}2.8$ dB re $1V/{\mu}Pa$ was measured for the fabricated hydrophone. In addition, it is known that the photoacoustic signals and the image of a hair obtained by a mechanical scanned photoacoustic imaging system with the fabricated hydrophone were bigger and better than those obtained with the commercial hydrophone.

Performances and Electrical Properties of Vertically Aligned Nanorod Perovskite Solar Cell

  • Kwon, Hyeok-Chan;Kim, Areum;Lee, Hongseuk;Lee, Eunsong;Ma, Sunihl;Lee, Yung;Moon, Jooho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.429-429
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    • 2016
  • Organolead halide perovskite have attracted much attention over the past three years as the third generation photovoltaic due to simple fabrication process via solution process and their great photovoltaic properties. Many structures such as mesoporous scaffold, planar heterojunction or 1-D TiO2 or ZnO nanorod array structures have been studied to enhance performances. And the photovoltaic performances and carrier transport properties were studied depending on the cell structures and shape of perovskite film. For example, the perovskite cell based on TiO2/ZnO nanorod electron transport materials showed higher electron mobility than the mesoporous structured semiconductor layer due to 1-D direct pathway for electron transport. However, the reason for enhanced performance was not fully understood whether either the shape of perovskite or the structure of TiO2/ZnO nanorod scaffold play a dominant role. In this regard, for a clear understanding of the shape/structure of perovskite layer, we applied anodized aluminum oxide material which is good candidate as the inactive scaffold that does not influence the charge transport. We fabricated vertical one dimensional (1-D) nanostructured methylammonium lead mixed halide perovskite (CH3NH3PbI3-xClx) solar cell by infiltrating perovskite in the pore of anodized aluminum oxide (AAO). AAO template, one of the common nanostructured materials with one dimensional pore and controllable pore diameters, was successfully fabricated by anodizing and widening of the thermally evaporated Al film on the compact TiO2 layer. Using AAO as a scaffold for perovskite, we obtained 1-D shaped perovskite absorber, and over 15% photo conversion efficiency was obtained. I-V measurement, photoluminescence, impedance, and time-limited current collection were performed to determine vertically arrayed 1-D perovskite solar cells shaped in comparison with planar heterojunction and mesoporous alumina structured solar cells. Our findings lead to reveal the influence of the shape of perovskite layer on photoelectrical properties.

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All Solution processed BiVO4/WO3/SnO2 Heterojunction Photoanode for Enhanced Photoelectrochemical Water Splitting

  • Baek, Ji Hyun;Lee, Dong Geon;Jin, Young Un;Han, Man Hyung;Kim, Won Bin;Cho, In Sun;Jung, Hyun Suk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.417-417
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    • 2016
  • Global environmental deterioration has become more serious year by year and thus scientific interests in the renewable energy as environmental technology and replacement of fossil fuels have grown exponentially. Photoelectrochemical (PEC) cell consisting of semiconductor photoelectrodes that can harvest light and use this energy directly to split water, also known as photoelectrolysis or solar water splitting, is a promising renewable energy technology to produce hydrogen for uses in the future hydrogen economy. A major advantage of PEC systems is that they involve relatively simple processes steps as compared to many other H2 production systems. Until now, a number of materials including TiO2, WO3, Fe2O3, and BiVO4 were exploited as the photoelectrode. However, the PEC performance of these single absorber materials is limited due to their large charge recombinations in bulk, interface and surface, leading low charge separation/transport efficiencies. Recently, coupling of two materials, e.g., BiVO4/WO3, Fe2O3/WO3 and CuWO4/WO3, to form a type II heterojunction has been demonstrated to be a viable means to improve the PEC performance by enhancing the charge separation and transport efficiencies. In this study, we have prepared a triple-layer heterojunction BiVO4/WO3/SnO2 photoelectrode that shows a comparable PEC performance with previously reported best-performing nanostructured BiVO4/WO3 heterojunction photoelectrode via a facile solution method. Interestingly, we found that the incorporation of SnO2 nanoparticles layer in between WO3 and FTO largely promotes electron transport and thus minimizes interfacial recombination. The impact of the SnO2 interfacial layer was investigated in detail by TEM, hall measurement and electrochemical impedance spectroscopy (EIS) techniques. In addition, our planar-structured triple-layer photoelectrode shows a relatively high transmittance due to its low thickness (~300 nm), which benefits to couple with a solar cell to form a tandem PEC device. The overall PEC performance, especially the photocurrent onset potential (Vonset), were further improved by a reactive-ion etching (RIE) surface etching and electrocatalyst (CoOx) deposition.

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