• Proceedings of the KSME Conference
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• 2007.05a
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• pp.215-219
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• 2007

In this work, the indium zinc oxide (IZO) films had been deposited on the glass substrate coated with the SiO film. Based on a comparative investigation of the IZO monolayer and IZO/SiO multilayer, it is shown that the thickness of SiO film has a great effect on the mechanical properties of the thin films. The AFM images of the IZO thin film included the SiO film were shown smoother surfaces than monolayer. Resistivity was in inverse proportion to Mobility. If it deposited the SiO film on the substrate, the layer of change was generated between two layer(SiO and substrate). The layer of change influenced resistance because of oxygen content was more than the IZO monolayer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.575-575
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• 2013

Indium Zinc Oxide (IZO)는 가시광 영역(380~780 nm)에서 높은 투과율과 적외선영역에서 높은 반사율을 보이는 투명산화막으로서 Flexible display 적용으로 주목 받는 재료이다. 특히 비 화학적 양론비(non-stoichiometric)로 성장된 박막은 N형 반도체 특성을 갖기 때문에 광전자 소자, 액정표시소자와 태양전지의 투명전극 재료로 이용되고 있으며, 향 후에도 수요는 계속 증가될 전망이다. 일반적으로 IZO 박막은 높은 열처리 온도에 의한 기판재료의 선택이 한정적인 단점이 있다. 따라서 최근에는 정밀하게 제어된 에너지를 가진 전자를 표면에 조사(E-beam irradiation)하여 박막의 물성을 개선하고 기판재료의 선택성을 넓히는 연구가 활발히 진행되고 있다 [1]. 본 연구에서는 RF Magnetron Sputtering 법을 이용하여 Glass 위에 IZO를 증착하였다. 스퍼터링타겟은 고순도 IZO 타겟을 이용하여 100 nm의 두께를 가지는 박막을 증착하였다. 증착된 IZO 박막에 E-beam Source ((주)인포비온)를 이용하여 E-beam irradiation energy 조건에 변화를 주어 박막의 물성 변화를 관찰하였다. IZO 박막의 두께를 측정하기 위해 SEM (Cross section)을 이용하였다. E-beam irradiation energy에 따른 가시광 영역(380~780 nm)에서의 광투 과도는 UV-Vis spectrometer를 사용하여 측정하였고, 전기적인 특성은 Hall measurement system 을 이용하여 측정하였다. 또한 박막의 결정성과 거칠기의 변화는 XRD (X-ray Diffraction)와 원자 간력현미경(Atomic Force Microscope; AFM)을 이용하여 측정하였다. Rf magnetron Sputtering 법을 이용하여 증착한 IZO 박막에 Post E-beam irradiation이 전기전도 및 광 투과특성과 결정성과 표면 조도를 향상시키는데 크게 기여함을 확인할 수 있었다.

• Journal of IKEEE
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• v.23 no.3
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• pp.904-909
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• 2019

Using the ion-beam irradiated indium zinc oxide (IZO) films which was cured at $100^{\circ}C$, uniform LC and homogeneous alignment of liquid crystal (LC) molecules was achieved. The IZO film was deposited on the glass substrate at the curing temperature of $100^{\circ}C$ and irradiated by the ion-beam which is an LC alignment method. To verify the LC alignment characteristics, polarizing optical microscope and the crystal rotation method were used. Additionally, it was confirmed that the LC cell with the IZO films had an enough thermal budget for high-quality LC applications. Field emission scanning electron microscope was conducted as a surface analysis to evaluate the effect of the ion-beam irradiation on the IZO films. Through this, it was revealed that the ion-beam irradiation induced rough surface with anisotropic characteristics. Finally, electro-optical (EO) performances of the twisted-nematic cells with the IZO films were collected and it was confirmed that this cell had better EO performances than the conventional rubbed polyimide. Furthermore, the polar anchoring energy was measured and a suitable value for stable LC device operation was achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.405-406
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• 2008

The amorphous indium zinc oxide (IZO) thin films were deposited on polyethersulfone (PES) and glass substrates by facing targets sputtering. IZO thin films deposited as functions of gas flow ratio on PES and glass substrates, respectively. The electrical, optical and structural properties of IZO thin films were evaluated by a Hall Effect Measurement, an X-Ray Diffractormeter, UV/VIS spectrometer in visible range and a scanning electron microscopy, respectively. As-deposited IZO thin films exhibited resistivity of $5.4\times10^{-4}$ and $4.5\times10^{-4}$ [$\Omega$-cm] on PES and glass substrates, respectively. The optical transmittance showed over 85% in the visible region on PES and glass substrates.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.51-55
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• 2009

We investigated that electrical and optical the properties of IZO thin film for OLED anode application. The IZO thin film was the deposited on the glass substrate by facing targets system as a function of substrate temperature. As a result, the electrical and optical property of IZO thin film prepared with $150^{\circ}C$ was most excellent. To confirm the suitability of the IZO thin film for OLED anode, we evaluated the performance of OLED with IZO/TPD/Alq3/LiF/Al fabricated on IZO anode. Also, the performance of OLED fabricated on IZO anode showed the most excellent at $150^{\circ}C$ substrate temperature.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.238-244
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• 2005

IZO thin films are prepared on a corning 7059 glass substrate in a mixed gases of Ar +$O_2$ by rf-magnetron sputtering, using a powder target with a composition ratio of $In_{2}O_{3}$ : ZnO=90 : 10 $wt.\%$. Their electrical sheet resistance are strongly dependent on the oxygen concentration introduced during the deposition, a minimum resistivity of $3.7\times10^{-4}\Omega\cdot$ cm and an average transmittance over $85\%$ in the visible range are obtained in a film deposited in pure Ar gas which is close to near the stoichiometry. During the heat treatment from room temperature up tp $600^{\circ}C$ in various environments, the electrical resistance changes are explained by cyrstallizations or oxidizations of In metal and InO contained in the IZO film. The electrical properties due to oxygen adsorption and phase transitions occurring at temperatures over $40000^{\circ}C$ during heat treatment in air are also investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.687-694
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• 2006

We report on the fabrication of organic-based flexible displays using an amorphous IZO anode grown at room temperature. The IZO anode films were grown by a conventional DC reactive sputtering on the polycarbonate (PC) substrate at room temperature using a synthesized IZO target in a $Ar/O_2$ ambient. Both x-ray diffraction (XRD) and high resolution electron microscope (HREM) examination results show that the IZO anode film grown at room temperature Is complete amorphous structure due to low substrate temperature. A sheet resistance of $35.6\Omega/\Box$, average transmittance above 90 % in visible range, and root mean spare roughness of $6\sim10.5\AA$ were obtained even in the IZO anode film grown on PC substrate at room temperature. It is shown that the $Ir(ppy)_3$ doped flexible organic light emitting diode (OLED) fabricated on the IZO anode exhibit comparable current-voltage-luminance characteristics as well as external quantum efficiency and power efficiency to OLED fabricated on conventional ITO/Glass substrate. These findings indicate that the IZO anode film grown on PC substrate is a promising anode materials for the fabrication of organic based flexible displays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.491-492
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• 2006

We report on the fabrication of organic-based flexible display using an amorphous IZO anode grown at room temperature. The IZO anode films were grown by a conventional DC reactive sputtering on polycarbonate (PC) substrate at room temperature using a synthesized IZO target in a Ar/$O_2$ ambient. X-ray diffraction examination results show that the IZO anode film grown at room temperature is complete amorphous structure due to low substrate temperature. It is shown that the $Ir(ppy)_3$ doped flexible organic light emitting diode (OLED) fabricated on the IZO anode exhibit comparable current-voltage-luminance characteristics to OLED fabricated on conventional ITO/glass substrate. These findings indicate that the IZO anode film grown on PC substrate is a promising anode materials for the fabrication of organic based flexible displays.

• Journal of the Korean Ceramic Society
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• v.44 no.6 s.301
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• pp.303-307
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• 2007

Transparent In-doped zinc oxide (IZO) thin films are deposited with variation of pulsed DC power at Ar atmosphere on coming 7059 glass substrate by pulsed DC magnetron sputtering. A c-axis oriented IZO thin films were grown in perpendicular to the substrate. The optical transmittance spectra showed high transmittance of over 80% in the UV-visible region and exhibited the absorption edge of about 350 nm. Also, the IZO films exhibited the resistivity of ${\sim}10^{-3}{\Omega}\;cm$ and the mobility of ${\sim}6cm/V\;s$. Organic Light-emitting diodes (OLEDs) with IZO/N,N'-diphenyl-N, N'-bis(3-methylphenl)-1, 1'-biphenyl-4,4'-diamine (TPD)/tris (8-hydroxyquinoline) aluminum ($Alq_3$)/LiF/Al configuration were fabricated. LiF layer inserted is used as an interfacial layer to increase the electron injection. Under a current density of $100\;mA/cm^2$, the OLEDs show an excellent efficiency (9.4 V turn-on voltage) and a good brightness ($12000\;cd/m^2$) of the emission light from the devices. These results indicate that IZO films hold promise for anode electrodes in the OLEDs application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.381-382
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• 2007

IZO/Ag/IZO (IAI) anode films for flexible organic light emitting diodes (OLEDs) were grown on PC (polycarbonate) substrate using DC sputter (IZO) and thermal evaporator (Ag) systems as a function of Ag thickness. To investigate electrical and optical properties of IAI stacked films, 4-point probe and UV/Vis spectrometer were used, respectively. From a IAI stacked film with 12nm-thick Ag, sheet resistance of $6.9\;{\Omega}/{\square}$ and transmittance of above 82 % at a range of 500-550 nm wavelength were obtained. In addition, structural and surface properties of IAI stacked films were analyzed by XRD (X-ray diffraction) and SEM (scanning electron microscopy), respectively. Moreover, IAI stacked films showed dramatically improved mechanical properties when subjected to bending both as a function of number of cycles to a fixed radius. Finally, OLEDs fabricated on both flexible IAI stacked anode and conventional ITO/Glass were fabricated and, J-V-L characteristics of those OLEDs were compared by Keithley 2400.