• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.121-124
• /
• 1998

Generally the structure of powder electroluminescent devices (PELDs) on ITO-film was makeup of the ZnS:Cu phosphor layer and BaTiO$_3$ insulating layer. The active layer, which consists of a suitably doped ZnS powder mixed in a dielectric, is sandwiched between two electrodes; one of which are ITO film and the other is aluminum. In this paper, three kinds of powder eleotroluminescent devices (PELDs) : WK-A(ITO/BaTiO$_3$/ZnS:Cu/Silver paste). WK-B(ITO/BaTiO$_3$+ZnS:Cu/Silver paste) and WK-C(ITO/BaTiO$_3$/ZnS:Cu/BaTiO$_3$/Silver paste), fabricated by spin coating method, were investigated. To evaluate the luminescence properties of three kinds of PELDs, EL emission spectroscopy, transferred charge density and time response of EL emission intensity under square wave voltage driving were measured.

• Journal of Powder Materials
• /
• v.11 no.1
• /
• pp.22-27
• /
• 2004

The Indium Tin Oxide(ITO) nano powders were prepared by spray drying and heat treatment process. The liquid solution dissolved Indium and Tin salts was first spray dried to prepare chemically homogeneous recursor powders at the optimum spray drying conditions. Subsequently, the precursor powders were subjected to eat treatment process. The nano size ITO powders was synthesized from the previous precursor powders and the npuities also were decreased with increasing heat treatment temperature. Furthermore, the lattice parameter of TO nano powders was increased by doping Tin into Indium with increasing heat treatment temperature. The par icle size of the resultant ITO powders was about 20∼50nm and chemical composition was composed of In:Sn =86:10 wt.％ at 80$0^{\circ}C$.

• Journal of Powder Materials
• /
• v.15 no.6
• /
• pp.450-457
• /
• 2008

The objectives of this study were the development of a synthesis technique for highly active nanosized ITO powder and the understanding of the reaction mechanisms of the ITO precursors. The precipitation and agglomeration phenomena in ITO and $In_{2}O_{3}$ precursors are very sensitive to reaction temperature, pH, and coexisting ion species. Excessive $Cl^-$ ion and $Sn^{+4}$ ions had a negative effect an synthesizing highly active powders. However, with a relevant stabilizing treatment the shape and size of ITO and $In_{2}O_{3}$ precursors could be controlled and high density sintered products of ITO were obtained. By applying the reprecipitation process (or stabilization technique), highly active ITO and $In_{2}O_{3}$ powders were synthesized. Sintering these powders at $1500^{\circ}C$ for 5 hours produced 97% dense ITO bodies.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1328_1329
• /
• 2009

Nano porous indium tin oxide (ITO) powder was synthesized employing a new route sol-gel combustion hybrid method using Ketjen Black as a fuel. The nano porous ITO powder was composed of $SnCl_4$-98.0% and $In(NO_3)_3{\cdot}XH_2O$-99.999%, produce with a $NH_4OH$ with sol-gel method as a catalyst [1,2]. Crystal structures were examined by powder X-ray diffraction (XRD), and those results show shaper intensity peak at $25.6^{\circ}(2{\Theta})$ of $SnO_2$ by increased sintering temperature. A particle morphology as well as crystal size was investigated by scanning electron microscopy(FE-SEM), and the size of the nano porous powder was found to be in the range of 20~30nm. ITO films could controlled by nano porous powder at various sintering temperature in this paper[3,4]. The sol-gel combustion method was offered simple and effective route for the synthesis of nano porous ITO powder[5].

• Korean Journal of Metals and Materials
• /
• v.48 no.9
• /
• pp.831-841
• /
• 2010

Indium tin oxide (ITO) nanopowders were synthesized by coprecipitation and the sol-gel method to prepare a stable dispersion of ITO nano-colloid for antistatic coating of a display panel. The colloidal dispersions were prepared by attrition process with a vibratory milling apparatus using a suitable dispersant in organic solvent. The ITO coating solution was spin-coated on a glass panel followed by the deposition of partially hydrolyzed alkyl silicate as an over-coat layer. The double-layered coating films were characterized by measuring the sheet resistance and reflectance spectrum for antistatic and antireflective properties.

• Resources Recycling
• /
• v.16 no.1 s.75
• /
• pp.28-36
• /
• 2007

Nano-sized ITO powders with the average particle size below 50 nm were synthesized from complex acid solution dissolved the ITO target into hydrochloric acid by a spray pyrolysis process, and the influences of reaction factors as reaction temperature and concentration of raw material solution were investigated. As the reaction temperature increases from 800 to $1000^{\circ}C$, the average particle size of the ITO powder increases from 40 nm to 100 nm, the microstructure gradually becomes solid, individual particles independently appear with the shape of polygon, the particle size distribution becomes increasingly irregular, the XRD peak intensity gradually increases and the specific surface area decreases. As the concentration of the raw material solution increases from 50g/l to 400g/l, the average particle size of ITO powder gradually increases, yet the particle size distribution appears more irregular. When the concentration is at 50 g/l, the average particle size of ITO powder is below 30 nm and the particle size distribution appears comparatively uniform. Nevertheless, when the concentration reaches 400 g/l, which is close to e saturated concentration, the particle size distribution appears extremely irregular, and the particles with the size ranging from 20 nm to 100 nm coexist. Along with the concentration rise, the XRD peak intensity gradually increases, yet the specific surface area decreases.

• Resources Recycling
• /
• v.27 no.2
• /
• pp.24-31
• /
• 2018

In this study, waste ITO target is dissolved into hydrochloric acid to generate a complex indium-tin chloride solution. Nano sized ITO powder with an average particle size below 30 nm are generated from these raw material solutions by spray pyrolysis process. Also, in this study, thermodynamic equations for the formation of indium-tin oxide (ITO) are established. As the reaction temperature increased from $800^{\circ}C$ to $900^{\circ}C$, the proportion and size of the spherical droplet shape in which nano sized particles aggregated gradually decreased, and the surface structure gradually became densified. When the reaction temperature was $800^{\circ}C$, the average particle size of the generated powder was about 20 nm, and no significant sintering was observed. At a reaction temperature of $900^{\circ}C$, the split of the droplet was more severe than at $800^{\circ}C$, and the rate of maintenance of the initial atomized droplet shape decreased sharply. The average particle size of the powder formed was about 25 nm. The ITO particles were composed of single solid crystals, regardless of reaction temperature. XRD analysis showed that only the ITO phase was formed. Remarkably, the specific surface area decreased by about 30% as the reaction temperature increased from $800^{\circ}C$ to $900^{\circ}C$.

• Journal of the Korean institute of surface engineering
• /
• v.33 no.5
• /
• pp.349-355
• /
• 2000

Indium tin oxide (ITO) thin films have been deposited on PET (polyethylene terephthalate) and glass substrates by a do magnetron sputter method of powder target without heat treatments such as substrate heater and post heat treatment. During the sputtering deposition, sputtering parameters such as sputtering power, working pressure, oxygen gas mixture, film thickness and substrate-target distance are important factors for the high quality of ITO thin films. The structural, electrical and optical properties of as-deposited ITO oxide films are investigated by sputtering power, oxygen partial pressure and films thickness among the several sputtering conditions. XRD patterns of ITO films are affected by sputtering power and pressure. As the power and pressure are increased, (411) and (422) peaks of ITO films are grown strongly. Electrical resistivity is also increased, as the sputtering power and pressure are increased. Transmittance of ITO thin films in the visible light ranges is lowered with an increase of sputtering power and film thickness. Reflectance of ITO films in infra-red region is decreased, as the power and pressure is increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.2
• /
• pp.109-115
• /
• 2006

Indium tin oxide (ITO) films have been prepared by DC magnetron sputtering. In order to improve the utilization efficiency of the target and reduce the cost of the film deposition processes, the powder target was used instead of the conventional ceramic target. As-deposited films were annealed at temperatures between $200^{\circ}C$ and $500^{\circ}C$ for 30 min in air. Also, the film was annealed in various atmospheres such as air, $O_2,\;H_2,\;N_2$, and vacuum at $400^{\circ}C$C for 30 min. Effects of the heat treatment conditions on structural, electrical, and optical properties of ITO films were investigated. The annealing temperature of $400^{\circ}C$ and atmospheres of $H_2$ and $N_2$ seem to be the most suitable conditions for post processing.

• Transactions on Electrical and Electronic Materials
• /
• v.2 no.1
• /
• pp.22-26
• /
• 2001

ITO (Indium-tin-oxide) thin films were deposited on glass substrates by a dc magnetron sputtering system using ITO powder target. The methods of heat treatment are important factor to obtain high quality ITO films with low electrical resistivity and good optical transmittance. Therefore, both methods of the substrate temperature and post-deposition annealing temperature have been compared on the film structural, electrical and optical properties. A preferred orientations shifts from (411) to (222) peak at annealing temperature of 200$\^{C}$. Minimum resistivity of ITO film is approximately 8.7$\times$10$\^$-4/ Ωcm at substrate temperature of 450$\^{C}$. Optical transmittances at post annealing temperature above 200$\^{C}$ are 90%. As a result, the minimum value of annealing temperature that is required for the recrystallization of as-deposited ITo thin films is 200$\^{C}$.