• 제목/요약/키워드: ITO (indium tin oxide)

검색결과 837건 처리시간 0.028초

생물학적 노출평가를 통한 타겟 제조업 근로자의 공정별 인듐 노출위험성 조사 (Investigating the potential exposure risk to indium compounds of target manufacturing workers through an analysis of biological specimens)

  • 원용림;최윤정;최성렬;김은아
    • 한국산업보건학회지
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    • 제24권3호
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    • pp.263-271
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    • 2014
  • Objectives: Along with the several cases of pulmonary disorders caused by exposure to indium that have been reported in Japan, China, and the United States, cases of Korean workers involved in processes that require handling of indium compounds with potential risk of exposure to indium compounds have also been reported. We performed biological monitoring for workers in various target manufacturing processes of indium, indium oxide, and indium tin oxide(ITO)/indium zinc oxide(IZO) in domestic factories. Materials: As biological exposure indices, we measured serum concentrations of indium using inductively coupled plasma mass spectrometry, and Krebs von den Lungen 6(KL-6) and surfactant protein D(SP-D) using enzyme-linked immunosorbent assays. We classified the ITO/IZO target manufacturing process into powdering, mixing, molding, sintering, polishing, bonding, and finishing. Results: The powdering process workers showed the highest serum indium level. The mixing and polishing process workers also showed high serum indium levels. In the powdering process, the mean indium serum concentration in the workers exceeded $3{\mu}g/L$, the reference value in Japan. Of the powdering, mixing, and polishing process workers, 83.3%, 50.0%, and 24.5%, respectively, had values exceeding the reference value in Japan. We suppose that the reason of the higher prevalence of high indium concentrations in powder processing workers was that most of the particles in the powdering process were respirable dust smaller than $10{\mu}m$. The mean KL-6 and SP-D concentrations were high in the powdering, mixing, and polishing process workers. Therefore, the workers in these processes who were at greater risk of exposure to indium powder were those who had higher serum levels of indium, as well as KL-6 and SP-D. We observed significant differences in serum indium, KL-6, and SP-D levels between the process groups. Conclusions: Five among the seven reported cases of "indium lung" in Japan involved polishing process workers. Polishing process workers in Korea also had high serum levels of indium, KL-6, and SP-D. The outcomes of this study can be used as essential bases for establishing biological monitoring measures for workers handling indium compounds, and for developing health-care guidelines and special medical surveillance in Korea.

전도성 고분자 박막을 이용한 ITO 투명 전극 필름의 열성형 안정성 향상 연구 (The Enhanced Thermoforming Stability of ITO Transparent Electrode Film by Using the Conducting Polymer Thin-Film)

  • 손서영;박성연;이상섭;윤창훈
    • 멤브레인
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    • 제33권5호
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    • pp.248-256
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    • 2023
  • ITO 투명 전극 필름은 디스플레이, 전기 자동차 등 산업 전 범위에서 널리 사용되는 전자 재료이다. 본 연구에서는 이러한 indium tin oxide (ITO) 필름의 열성형 안정성을 향상시키기 위하여 Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) 전도성 고분자 코팅 용액 조성을 결정하였다. 1000 S/cm의 고 전도성을 보이는 PEDOT:PSS 용액에 끓는점이 각기 다른 4가지 종류의 용매를 희석하였고, 코팅 전 후 면저항 변화를 분석하였다. 또한 380~800 nm 영역의 광 투과율 분석 및 Raman 스펙트럼 분석을 통하여 PEDOT:PSS 박막이 코팅된 ITO 투명 전극의 전기적 특성 결정 메커니즘을 규명하였다. 230℃ 열성형 공정 결과 ITO 필름은 113% 연신 상태에서 이미 전기 전도성을 읽었지만, ethylene glycol을 희석 용매로 사용하여 얻어진 전도성 고분자 박막이 적용된 ITO 필름은 126% 고 연신 상태에서도 초기 60 Ω/sq 면저항을 246 Ω/sq로 유지하는 우수한 전기 전도성을 보였다.

반응성 마그네트론 프로세스에 의한 ITO박막 형성에 관한 연구 (A study on the formation of ITO thin film by DC reactive magnetron sputtering)

  • 곽영순;조정수;박정후;하홍주;성열문
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1992년도 하계학술대회 논문집 B
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    • pp.897-899
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    • 1992
  • This paper deals with the characteristics of Indium Tin Oxide(ITO) sputtered by the reactive magnetron sputtering process. ITO films have been grown at various substrate temperatures(R.T, 100$^{\circ}C$, 200$^{\circ}C$, 240$^{\circ}C$) and we used the target material of alloy of Indium and Tin. The electrical and optical properties of the ITO film have been investigated and the effect of magnetic field to the properties of ITO was studied. We have studied how much the improvement of transmission rate and sheet resistivity by heat treatment was. The sample with good electrical and optical properties can be obtained for the low substrate temperature of 200$^{\circ}C$-250$^{\circ}C$.

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스퍼터링 공법으로 제작한 ITO 박막의 디지털 홀로그래피를 이용한 단차에 대한 측정 (Measurement of Step Difference using Digital Holography of ITO Thin Film Fabricated by Sputtering Method)

  • 정현일;신주엽;박종현;정현철;김경석
    • 한국기계가공학회지
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    • 제20권9호
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    • pp.84-89
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    • 2021
  • Indium tin oxide (ITO) transparent electrodes, which are used to manufacture organic light-emitting diodes, are used in light-emitting surface electrodes of display EL panels such as cell phones and TVs, liquid crystal panels, transparent switches, and plane heating elements. ITO is a major component that consists of indium and tin and is advantageous in terms of obtaining sheet resistance and light transmittance in a thin film. However, the optical performance of devices decreases with an increase in its thickness. A digital holography system was constructed and measured for the step measurement of the ITO thin film, and the reliability of the technique was verified by comparing the FE-SEM measurement results. The error rate of the step difference measurement was within ±5%. This result demonstrated that this technique is useful for applications in advanced MEMS and NEMS industrial fields.

유기 전계 발광 디스플레이용 ITO 투명 전도성 박막의 CMP에 관한 연구 (The Study on the CMP of Transparent Conductive ITO Thin Films for the Organic Electro-Luminescence Display)

  • 조성환;김형재;김경준;정해도
    • 대한기계학회논문집A
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    • 제26권5호
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    • pp.976-985
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    • 2002
  • The purpose of this paper is that the roughness(Rrms = 31$\AA$, Rp-v = 270$\AA$) of ITO thin film deposited by sputtering method for OELD is improved to Rrms $\leq$ 10$\AA$, Rp-v $\leq$ 80$\AA$ by chemical mechanical polishing(CMP). First, ITO thin films are polished with a variety of consumables (Pads, Slurries) to choose proper some for the roughness improvement and the CMP mechanism of ITO thin films is demonstrated on the ground of the experiment results. Henceforth, the CMP characteristics (Removal rate, Non-uniformity) of chosen consumables are evaluated according to processing conditions (Polishing pressures, Table velocities) and suitable conditions for ITO film CMP are selected. Finally, the electrical and optical properties (Sheet resistance, Transmittance) of ITO thin films are investigated to verify whether or not ITO thin film are still suitable for OELD after polished.

증착압력과 $O_2$ 농도 변화에 따른 Indium-zinc-tin-oxide(IZTO) 박막의 투명전도 특성에 관한 연구

  • 손동진;남은경;정동근;김용성
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.214-214
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    • 2010
  • Indium-tin-oxide(ITO)는 평판디스플레이 산업이 성장함에 따라 그 수요는 계속 늘고 있지만 세계적으로 In의 매장량의 한계로 그 단가가 매우 높다. 또한 ITO는 플렉시블 디스플레이에 적용함에 있어서 고온 공정으로 인해 많은 단점을 보이고 있어 이를 대체할 새로운 투명전극의 개발이 활발히 진행되고 있다. 본 연구에서는 IZTO($In_2O_3$:ZnO:$SnO_2$=80:10:10 wt.%)의 In 량을 절감한 조성의 타겟을 제조하였다. 그리고 유리기판 위에 IZTO 박막을 펄스 DC 마그네트론 스퍼터링을 이용하여 증착압력과 활성 산소의 분압을 변화시키며 증착하였다. 증착압력의 변화는 3mTorr~8mTorr 범위에서 제어하였고 활성 산소의 분압은 0%~3% 범위에서 제어하였으며 기판의 온도의 제어 없이 상온에서 증착하였다. 증착한 박막은 전기적, 광학적 및 구조적 특성 등을 조사하였다. 증착압력 6mTorr와 산소분압 2%의 조건에서 비저항은 $5.07{\times}10^{-4}\;({\Omega}{\cdot}cm)$, 캐리어 농도는 $2.96{\times}10^{20}(cm^{-3})$, 이동도는 $41.6(cm^{-2}/Vs)$로 가장 좋은 전기적 특성을 보였다. 박막의 투과율을 측정한 결과 평균 85% (400nm~800nm)이상의 우수한 광학적 특성을 보였다. 또한 이 IZTO 박막을 이용하여 OLED 소자를 제작하여 그 특성을 조사하였다. 조사 결과 플렉시블 디스플레이 분야에서 IZTO 박막은 In 절감효과와 상온 공정에서 우수한 투명전극 특성을 보여 ITO를 대체할 물질로 가능성을 보여주었다.

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Analysis of morphological and electrical properties of optoelectronic devices with trimethoxy(proply)silane

  • Myung-Gyun Baek;Sang-Seok Yun;Jin-Sa Kim;Hong-Gyu Park;Sang-Geon Park
    • Journal of Ceramic Processing Research
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    • 제23권3호
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    • pp.320-325
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    • 2022
  • In this study, we investigated the deposition of trimethoxy(propyl)silane as a self-assembled monolayer (SAM) on the surface of an indium tin oxide (ITO) substrate in organic light-emitting diodes (OLEDs) by examining the changes in surface characteristics of the modified substrate with variations in deposition time and temperature. The highest contact angle was obtained at 160 ℃, and for each deposition time, the contact angles were 63°, 66°, 80°, 96°, 103°, 103°, 103°, and 104°, respectively, indicating the contact angle, and thus the hydrophobicity, increased with increasing deposition time and temperature. In addition, after 90 min of deposition, adequate SAM coverage was achieved on the ITO surface. When the coverage ratio was calculated, ≥ 99% coverage was obtained after 90 min of deposition at 160 ℃. Atomic force microscopy of samples with SAM coverage obtained after 90 min at different deposition tem-peratures revealed improvement in the surface roughness of the fabricated samples. The work function, measured using a photoelectron spectrometer, demonstrated a characteristic increase with increasing temperature. Thus, SAM deposition can improve the ITO surface properties depending on the time and temperature of deposition.

Fetal Bovine Serum을 포함한 세포 배양액에 담근 Indium Tin Oxide 전극 계면의 전기화학적 특성 (Electrochemical Properties of Indium Tin Oxide Electrodes Immersed in a Cell Culture Medium with Fetal Bovine Serum)

  • 최원석;조성보
    • 대한의용생체공학회:의공학회지
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    • 제34권1호
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    • pp.34-39
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    • 2013
  • For the biocompatibility test of implantable devices or for the sensitivity evaluation of biomedical sensors, it is required to understand the mechanism of the protein adsorption and the interaction between the adsorbed proteins and cells. In this study, the adsorption of proteins in a cell culture medium with fetal bovine serum onto an indium tin-oxide electrode was characterized by using linear sweep voltammetry and impedance spectroscopy. We immersed the fabricated ITO electrodes in the culture medium for 30, 60, or 90 min, and then measured the electrochemical properties of electrodes with 10 mM $Fe(CN){_6}^{3-/4-}$ and 0.1 M KCl electrolyte. With an increase of contacting time, the anodic peak current was decreased and the charge transfer resistance was increased. However, both parameters were recovered to the values before contact with the medium after the treatment of Trypsin/Ethylenediaminetetraacetic acid hydrolyzing proteins.

PPV를 이용한 유기 박막 EL 소자의 전기-광학적특성 (Electro-optical properties of organic thin film EL device using PPV)

  • 김민수;박이순;박세광
    • 센서학회지
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    • 제7권2호
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    • pp.97-102
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    • 1998
  • PPV(poly(p-phenylenevinylene))를 발광체로 이용한 유기 박막 EL 소자를 다양한 구조와 조건으로 제작하였으며, 그 전기-광학적 특성을 평가하였다. 제작된 EL 소자는 단층구조(ITO(indium tin oxide)PPV/Mg), 이층구조 (ITO/PVK(poly(N-vinylcarbazole))/PPV)Mg와 ITO/PPV/Polymer matrix+PBD/Mg) 그리고 삼층구조 (ITO/PVK/PPV/PS(polystyrene)+PBD(butyl-2-(4-biphenyl)-5-(4-tert-butylphenyl-1,3,4-oxadiazole))/Mg)를 가지며, 그들의 전기광학적 특성을 상호 비교하였다. 이층구조(ITO/PPV)Polymer matrix+PBD/Mg)에서는 PMMA (poly(methyl methacrylate)), PC(polycarbonate) PS 와 MCH(side chain liquid crystalline homopolymer)를 고분자 메트릭스로 사용하였으며, 특히, PS 고분자 메트 릭스를 전자수송층으로 사용하는 경우에 전자수송제인 PBD의 농도에 따른 발광휘도 특성을 구하였다. 제작된 소자의 인가전압에 따른 전류, 휘도특성을 분석한 결과 터널링효과를 나타내었고 안정된 발광특성을 가진다는 것을 알 수 있었다.

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롤투롤 스퍼터를 이용하여 PET 기판 위에 제조된 ITO 박막의 색도(b*) 및 투과도 연구 (Chromaticity (b*) and Transmittance of ITO Thin Films Deposited on PET Substrate by Using Roll-to-Roll Sputter System)

  • 서성만;강보갑;김후식;임우택;최식영
    • 한국재료학회지
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    • 제19권7호
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    • pp.376-381
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    • 2009
  • Indium Tin Oxide (ITO) thin films on Polyethylene Terephtalate (PET) substrate were prepared by Roll-to-Roll sputter system with targets of 5 wt% and 10 wt% $SnO_2$ at room temperature. The influence of the chromaticity (b*) and transmittance properties of the ITO Films were investigated. The ITO thin films were deposited as a function of the DC power, rolling speed, and Ar/$O_2$ gas flow ratio, and then characterized by spectrophotometer. Their crystallinity and surface resistance were also analyzed by X-ray diffractometer and 4-point probe. As a result, the chromaticity (b*) and transmittance of the ITO films were broadly dependent on the thickness, which was controlled by the rolling speed. When the ITO films were prepared with the DC power of 300 W and the Ar/$O_2$ gas flow ratio of 30/1 sccm using 10 wt% $SnO_2$ target as a function of the rolling speeds 0.01 through 0.10 m/min, its chromaticity (b*) and transmittance were about -4.01 to 11.28 and 75.76 to 86.60%, respectively. In addition, when the ITO films were deposited with the DC power of 400W and the Ar/$O_2$ gas flow ratio of 30/2 sccm used in 5 wt% $SnO_2$ target, its chromaticity (b*) and transmittance were about -2.98 to 14.22 and 74.29 to 88.52%, respectively.