• 대한안전경영과학회지
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• 제4권2호
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• pp.199-207
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• 2002

The polycrystalline CdS of large scale were grown by chemical pyrolysis deposition for $Cu_2$S/CdS heterojunction solar cells. For high quality CdS polycrystalline thin films, the chemical solution was deposited on indium tin oxide(ITO) glasses at the temperature of 50$0^{\circ}C$ for 15 second and annealed at 35$0^{\circ}C$ for 20 minute or 50$0^{\circ}C$ for 30 second. To fabricate high efficiency solar cells, optical and electrical properties, morphology by SEM and x-ray diffraction on polycrystalline CdS thin films were investigated. From the I-V characteristics of $Cu_2$S/CdS heterojunction, the open circuit voltage, $V_{oc}$ was 0.7 V and the short circuit current, $I_{sc}$ was 4.2 mA. We found that the fill factor(FF) was 0.5 and the efficiency was 2.5%.

• Journal of the Optical Society of Korea
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• 제17권5호
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• pp.428-432
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• 2013

This research presents a flexible reflective thermochromic display (TCD) comprised of thermochromic pigments and a patterned indium tin oxide (ITO) film coated on a polyethylene naphthalate (PEN) substrate, and the display's thermo-optical characteristics. The display showed maximum red, green, and blue reflectances of 30%, 38%, and 29%, respectively. Furthermore, the display exhibited a continuous grey color when the temperature was changed continuously. As a flexible display, the display showed reliable thermo-optical performance without image damage even when highly bent. We expect the proposed TCD will be used in outdoor information display applications where low cost is a key factor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.339-342
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• 1997

The optical properties of WO$_3$thin films deposited by RF magnetron reactive sputtering were studied. The substrate was an ITO(indium-tin-oxide) glass(100$\Omega$/ ). The optical properties are examined by different deposition conditions. RF power, substrate temperature, $O_2$concentraction. Ar flow rate, working pressure and thickness are 40~60W, 25~30$0^{\circ}C$, 10%, 54~72sccm, 5~20m7orr and 1200~2400$\AA$, respectively. All these films were colorless, light yellow and found to be amorphous in structure by X-ray diffraction analysis. When RF power, substrate temperature, $O_2$concentraction, Ar flow rate, working pressure and thickness are 40W, $25^{\circ}C$, 10%, 72sccm, 20mTorr and 2400$\AA$, respectively the values of transmittance of the WO$_3$thin films in visible region are about 80%.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.622-626
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• 2003

We report the electrical properties of organic light emitting diodes (OLEDs) depending on the crystal structure of hole injection layer of copper(II)-phthalocyanine(CuPc) and the light irradiation the carrier mobility of copper(II)-phthalocyanine(CuPc) of light source. OLEDs were constructed with indium tin oxide(ITO)/CuPc/triphenyl-diamin(TPD)/tris-(8-hydroxyquinoline)aluminum(Alq$_3$)/Al.Photocurrent multiplication of OLEDs was varied by the heat-treatment condition of CuPc thin film and the light irradiation.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.376-382
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• 2000

We successfully fabricated OLED(Organic Light Emitting Diodes) with Al cathodes electrode deposited by the DC magnetron sputtering. The effects of a controlled Al cathode layer of an Indium Tin Oxide (ITO)/blended single polymer layer (PVK Bu:PBD:dye)/Al light emitting diodes are described. The PVK (Poly(N-vinylcarbazole)) and Bu-PBD (2-(4-biphenyl-phenyl)-1,3,4-oxadiazole) are used hole transport polymer and electron transport molecule respectively. We found that both current injection and electroluminescence output are significantly different with a variable DC sputtering power. The difference is believed to be due to the influence near the blended polymer layer/cathode interface that results from the DC power and H$\sub$2//O in a chamber. And DC sputtering deposition is an effective way to fabricate Al electrodes with pronounced orientational characteristics without damage occurring to metal-organic interface during the sputtering deposition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.475-476
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• 2005

Efficient electron injection is essential to achieve bright and efficient organic light-emitting diodes (OLEDs). In spite of high work function of Al, it is a common cathode because of its stability. In this paper, to overcome the poor electron injection in OLEDs with Al cathode, OLEDs with various composite cathodes were fabricated and investigated using a conventional OLEDs structure of indium tin oxide ITO/NPB(40 nm)/$Alq_3$(50 nm)/Al. composite cathodes were composed of alkaline materials such as Ca and Li, Al deposition or codeposited with AI. We showed best performance at the device with composite cathode (LiF/Al).

• Applied Science and Convergence Technology
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• 제26권6호
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• pp.149-156
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• 2017

Recently, stretchable and transparent electrodes have received great attention owing to their potential for realizing wearable electronics. Unlike the traditional transparent electrodes represented by indium tin oxide (ITO), stretchable and transparent electrodes are able to maintain their electrical and mechanical properties even under stretching stress. Lots of research efforts have been dedicated to the development of stretchable and transparent electrodes since they represent the most important engineering platform for the production of wearable electronics. Various approaches using silver nanowires, nanostructured networks, conductive polymers, and carbon-based electrodes have been explored by many world leading research groups. In this review, present and recent advances in the fabrication methods of stretchable and transparent electrodes are discussed.

• 한국표면공학회지
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• 제30권4호
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• pp.223-230
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• 1997

Tungsten oxide and nickel oxide thin films were deposited onto ITO(Indium Tin Oxide) transparent glass by the E-beam evaporation and were used as a cathode and an anode for the EC(Electrochromic) smart window, respectively. Stoichiometric structures of the deposited films were investigated by the implementation of XPS(X-ray Photoelectron Spectroscopy) analysis and the results were $WO_{2.42}$ and $NiO_{0.44}$. This oxygen deficincy might affect affect the transparency of the thin films. The electrolyte for the EC smart windows was PAN-$LiCIO_4$ conducting polymer. EC(Ethylene Carbonate)and PC(Propylene Carbonate) were added as plasticizer to enhance ion conductivity. When the weight ratio of the EC : PC was 3 : 1, transmission difference and cycle life performance were tested. Polymer EC windows showed 40% $\Delta$T at 1.5V operating volage for 3,200 cycles. Structural degradation was observed by the SIMS(Secondary Ion Mass Spectroscopy) analysis and it was confirmed that structural degradation of polymer caused by the solvent evaporation was the main cause to degrade EC smart windows.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.111.2-111.2
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• 2012

정보 기술 시대에 맞춰 광전소자의 연구가 활발해지면서 투명전극으로 사용될 수 있는 Transparent Conductive Oxide (TCO) 재료에 대한 관심이 높아지고 있다. 하지만 TCO의 대표적인 물질인 Indium Tin Oxide (ITO)의 경우 In의 가격 상승으로 인해 최근에는 낮은 전도도와 높은 투과도를 가질 수 있는 대체 물질에 대한 연구가 활발히 진행되고 있다. 그 중에서 3.2 eV 의 높은 밴드갭을 갖는 ZnO 는 가시광선 영역에서 높은 투과율을 나타낼 뿐만 아니라 Al, Ga을 도핑함으로써 낮은 전도도를 가질 수 있다. 이러한 TCO 재료는 surface texturing을 통하여 optical region 에서 반사를 억제 시킴으로서 빛을 모으는 역할을 하여 태양전지의 효율을 향상 시킬 수 있기 때문에 PV (Photovoltaics) Cell의 anti-reflective coating에 적용 할 수 있다. 본 연구에서는 pulsed DC magnetron sputtering을 이용하여 Ga-doped ZnO (GZO) 박막을 증착하였고, HCl 0.5 wt %로 wet etching을 통하여 surface texturing을 진행하였다. 결정성은 X-ray diffractometer (XRD)로 분석하였으며, 표면 형상은 Scanning Electron Microscope (SEM)을 통해 확인하였다. Van der Pauw 방법을 통해 resistivity, carrier concentration, hall mobility 등의 전기적 특성을 분석하였고 UV-Vis spectrophotometer 를 통해 투과도 및 반사도를 측정하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.188-188
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• 2010

최근까지는 주로 비정질 실리콘이 디스플레이의 채널층으로 상용화 되어왔다. 비정질 실리콘 기반의 박막 트랜지스터는 제작의 경제성 및 균일성을 가지고 있어서 널리 상용화되고 있다. 하지만 비정질 실리콘의 구조적인 문제인 낮은 전자 이동도(< 1 cm2/Vs)로 인하여 디스플레이의 대면적화에 부적합하며, 광학적으로 불투명한 특성을 갖기 때문에 차세대 디스플레이의 응용에 불리한 점이 있다. 이런 문제점의 대안으로 현재 국내외 여러 연구 그룹에서 산화물 기반의 반도체를 박막 트랜지스터의 채널층으로 사용하려는 연구가 진행중이다. 산화물 기반의 반도체는 밴드갭이 넓어서 광학적으로 투명하고, 상온에서 증착이 가능하며, 비정질 실리콘에 비해 월등히 우수한 이동도를 가짐으로 디스플레이의 대면적화에 유리하다. 특히 Zinc Oxide, Tin Oxide등의 산화물이 연구되고 있으며, indium이나 aluminum등을 첨가하여 전기적인 특성을 향상시키려는 노력을 보이고 있다. 본 연구에서는 Zinc Oxide 기반의 박막 트랜지스터를 DC magnetron sputtering를 이용하여 상온에서 제작한 후 다양한 조건에서의 후열처리를 통하여 소자의 특성의 최적화를 이루는 것을 시도하였다. 그리고 ITO를 전극으로 사용하여 bottom gate 구조의 박막 트랜지스터를 만들고 air 분위기에서 온도별, 시간별 열처리를 진행하였다. 또한 gate insulator의 처리를 통하여 thin film의 interface 개선을 통하여 소자의 성능 향상을 시도 하였다. semiconductor analyzer로 소자의 출력 특성 및 전이 특성을 평가하였다. 그 결과 기존의 a-Si 기반의 박막 트랜지스터보다 우수한 이동도의 특성을 갖는 ZnO 박막 트랜지스터를 얻었다. 그리고 이를 바탕으로 ZnO를 이용하여 대면적 적합한 디스플레이를 제작할 수 있다는 가능성을 보인다. 그리고 Temperature, Bias Temperature stability, 경시변화 등의 다양한 조건에서의 안정성을 평가하여 안정성이 향상을 확보하여 비정질 실리콘을 대체할 유력한 후보중위 하나가 될 것이라고 생각된다.