• 제목/요약/키워드: ITO (Indium Tin Oxide)

검색결과 835건 처리시간 0.028초

Investigation into the stability of ion beam treated inorganic alignment layer

  • Kim, Kyung-Chan;Ahn, Han-Jin;Kim, Jong-Bok;Hwang, Byung-Har;Baik, Hong-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.328-329
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    • 2005
  • Inorganic alignment layer (IAL) was deposited on an indium-tin-oxide (ITO) by using reactive sputtering deposition method. After deposited, IAL was irradiated by $Ar^+$ ion beam (IB) for liquid crystal (LC) alignment. IAL treated by various conditions such as IB energy, IB incident angle, and IB irradiation time had excellent alignment property and electro-optical property the same as that of PI. We investigated into the stability of ion beam treated IAL after a lapse of long time. However IAL irradiated IB did not occur degradation of electro-optical property. The results implied that IAL irradiated IB was adopted as LC alignment layer instead of rubbed polyimide.

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3전극형 반사형 디스플레이의 단일컬러 구현 및 구동방법 (Single Color Realization and Driving Method of Three-Electrode Type Reflective Display)

  • 이상일;김영조
    • 한국전기전자재료학회논문지
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    • 제28권2호
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    • pp.109-114
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    • 2015
  • We realize a color reflective display without any color filter and sub-pixelation concept, by which the full or single color realization is basically impossible. In this study, we use a 3-electrode on the lower substrate with indium tin oxide (ITO) glass. The width of a rib is $30{\mu}m$, a cell size is $150{\mu}m{\times}150{\mu}m$, and the space of lower electrodes is $10{\mu}m$. To get the single color, we drive this panel by a identical algorithm based on the movement of charged particle in color fluid within a cell with hermetic seal. According to the driving method, the lifetime of panel is different.

$Alq_3$/TPD EL소자의 제작과 그 특성에 관한 연구 (Preparation and characterization of $Alq_3$/TPD EL devices)

  • 채수길;김태완;강도열
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 C
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    • pp.1469-1471
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    • 1997
  • In this study, Organic electroluminescent(EU devices with multilayer structures were fabricated using tris (8-hydroxy quinolinate) aluminum($Alq_3$) as an electron-tran sporting emitting layer and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl)-[1,1'-biphenyl]-4,4'-diamine : aromatic diamine) as a hole-transporting layer. A cell with a structure of glass substrate/indium-tin-oxide(ITO)/$Alq_3$/TPD/Mg:In exhibited bright green electroluminescence from the TPD layer. The peak intensity of TPD and $Alq_3$ different from spin coating and vacuum evaporation. The peak emission energy shifts to a higher energy with deposition technique. An emission peak at 500nm was achieved at a driving voltage of 30V.

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유기층 증착속도에 따른 OLEDs의 전기적, 광학적 특성

  • 이영환;김귀열;홍진웅
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
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    • pp.135-138
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    • 2006
  • OLEDs are attractive because of possible application in display with low operating voltage, low power consumption, self-emission and capability of multicolor emission by the selection of emissive material. We investigated the effects of deposition rate on the electrical characteristics, physical characteristics and optical characteristics of OLEDs in the ITO(indium-tin-oxide)/N,N'-diphenyl-N,N'-bis(3-methyphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris(8-hydroxyquinoline)aluminum($Alq_3$)/Al device. We measured current density, luminous flux and luminance characteristics of devices with varying deposition rates of TPD and $Alq_3$. It has been found that optimal deposition rate of TPD and $Alq_3$ were respectively $1.5{\AA}/s$ from the device structure. An AFM measurement results, surface roughness of the deposited film was the lowest when deposition rate was $1.5{\AA}/s$.

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Optoelectronic and electronic applications of graphene

  • Yang, Hyun-Soo
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2012년도 춘계학술발표대회
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    • pp.67.2-67.2
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    • 2012
  • Graphene is expected to have a significant impact in various fields in the foreseeable future. For example, graphene is considered to be a promising candidate to replace indium tin oxide (ITO) as transparent conductive electrodes in optoelectronics applications. We report the tunability of the wavelength of localized surface plasmon resonance by varying the distance between graphene and Au nanoparticles [1]. It is estimated that every nanometer of change in the distance between graphene and the nanoparticles corresponds to a resonance wavelength shift of ~12 nm. The nanoparticle-graphene separation changes the coupling strength of the electromagnetic field of the excited plasmons in the nanoparticles and the antiparallel image dipoles in graphene. We also show a hysteresis in the conductance and capacitance can serve as a platform for graphene memory devices. We report the hysteresis in capacitance-voltage measurements on top gated bilayer graphene which provide a direct experimental evidence of the existence of charge traps as the cause for the hysteresis [2]. By applying a back gate bias to tune the Fermi level, an opposite sequence of switching with the different charge carriers, holes and electrons, is found [3]. The charging and discharging effect is proposed to explain this ambipolar bistable hysteretic switching.

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나노실버 투명전도소재 보호필름의 개발 및 공정 최적화와 실험 계획법을 이용한 검증 (Commercialization & Process Optimization of Protective Film on Nano Silver Transparent Conductive Substrate by Means of Large Scale Roll-to-Roll Coating and Experimental Design)

  • 박광민;이지훈
    • 한국전기전자재료학회논문지
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    • 제28권12호
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    • pp.813-820
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    • 2015
  • We have studied commercialization and process optimization of protective film on transparent conductive coated substrate, nano silver on flexible PET (poly ethylene terephthalate), by means of roll-to-roll micro-gravure coater. Nanosilver on flexible PET substrate is potential materials to replace ITO (indium tin oxide). Protective film is most important to maintain unique silver pattern on top of transparent PET. PSA pressure sensitive adhesives) was developed solely for nano silver on PET and protective film was successfully laminated. We have optimized all process conditions such as coating thickness, line speed and aging time & temperature via experimental design. Transparent conductive film and its protective film developed in this research are commercially available at this moment.

Synthesis and Characterization of Red Light-Emitting Random Copolymers

  • Lee, Yeong-Beom;Shim, Hong-Ku
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1418-1421
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    • 2009
  • A series of new light-emitting random copolymers with fully conjugated structure was prepared, for the first time through the well-known Gilch polymerization between 1,4-bis(chloromethyl)-2-ethylhexyloxy-5-methoxybenzene and 2,5-bis(bromomethyl)thiophene monomers in different ratios. The synthesized polymers (on thin film) showed the maximum wavelength of UV-visible absorbance and photoluminescence (PL) near 500 nm and near 600 nm, respectively. A single-layer light-emitting diode device, which has a simple ITO (indium-tin oxide)/polymer/Al configuration, was fabricated by spin-coating of polymers and then vacuum evaporation of Al metal. The threshold bias of PMEHPVTVs was in the range of 3.5-10 V. As in the PL spectra, the maximum wavelength of light emission near 600 nm was also shown in electroluminescence (EL) spectra of PMEHPVTVs when the operating voltage was about 7 - 14 V.

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Sol-Gel 법으로 제작된 PLZT 박막의 Zr/Ti 비에 따른 구조 특성에 관한 연구 (A Study on the Structural Characteristics of PLZT Thin Films with Zr/Ti Ratios Prepared by Sol-Gel Method)

  • 최형욱;장낙원;;박창엽
    • 한국전기전자재료학회논문지
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    • 제11권7호
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    • pp.535-540
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    • 1998
  • Thin films of PLZT were prepared on indium tin oxide(ITO) coated glass substrates by sol-gel process and annealed by rapid thermal annealing(RTA) at $750^{\circ}C$ for 5 minutes. The crystal structure of PLZT thin films were investigated for a different Zr mol% content. XRD results showed that the crystallographic structure was transitted from tetragonal to rhombohedral structure as Zr mol% increased. Raman spectroscopy results showed that the bands of spectra became broader as the amount of Zr mol% increased and two crystal phase coexisted at 2/55/45 PLZT film. Raman spectroscopy was useful for crystal structure analysis of PLZT thin films.

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The Poly(3-hexylthiophene)을 발광층으로 사용한 전계 발광소자의 발광특성 (Emission Properties of Electroluminescent Device Using Poly(3-hexylthiophene) as Emilting Material)

  • 김주승;구할본;조재철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.263-266
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    • 1999
  • Electrolunlinescent devices based on conjugated polymer emitting materials have been much attracted possible applications for multicolor flat panel display, since the conjugated polymers have a small band gap emitting obtained at a low driving voltage. In this paper, we fabricated the single layer EL device using poly(3-hexylthiophene) as emitting material Electroluminescence(EL) and I-V-L characteristics of indium-tin-oxide[ITO]P3HT/AI device with a various thickness were investigated. It was demonstrate that the I-V characteristics depend, not the voltage but the electric- field strength, The current is dependent on the electric filed and not on the applied voltage, indicating that the carriers are injected by a tunneling process. In the device, the barrier to hole injection is only 0.5eV and the barrier to electron injection is 1.5eV.

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Para-sexiphenyl 유기 EL 소자의 전기적 특성 (Electrical Characterization of Para-Sexiphenyl Organic Electroluminescenct Devices)

  • 이용수;박재훈;최종선
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 C
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    • pp.1739-1741
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    • 2000
  • DC current density-voltage and impedance spectroscopy studies have been performed on indium-tin-oxide(ITO)/para-sexiphenyl(6p)/aluminium organic electroluminescent device. The device exhibited a blue color emission, The turn-on voltage of the device is observed at 5V from the current density-voltage measurements. The impedance spectroscopy measurements show that a resonance frequency shift with applied DC bias is observed and a single semi-circle Cole-Cole plot is confirmed. The bias-dependent bulk resistance and bias-independent bulk capacitance is observed.

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