• Title/Summary/Keyword: ITO(Indium-Tin-Oxide)

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Preparation of Nano-sized Indium Tin Oxide (ITO) Powders and Their Sintering Behavior

  • Lee In-Gyu;Heo Seung-Moo
    • Journal of Powder Materials
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    • v.11 no.6 s.47
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    • pp.467-471
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    • 2004
  • In order to fabricate a high density sintered body of ITO, nano-sized ITO powders were synthesized by coprecipitation methods. Aqueous solutions of indium and tin salts were mixed and coprecipitated by changing their pH. Coprecipitated ITO powders possessed 20-30 nm crystallite size and a relatively high BET value ($35m^2/g$), however, aggregation of particles were occurred. Therefore, a novel recrystallization technique was applied in order to eliminate the aggregates. The recrystallized ITO material consists of a little bit larger needlelike crystals, $20nm{\times}80nm$, and it possesses a higher BET value $(57m^{2}/g)$ compared to the plain coprecipitated material $(35m^{2}/g)$. Metastable phase formation and higher content of aggregated particles were observed in the coprecipitated materials. Densification was 95% to 98% complete after 5 hour sintering at $1500^{\circ}C$ for the recrystallized powders while densities of the coprecipitated powders were below 75%.

Electrochemical Immunosensor Using the Modification of an Amine-functionalized Indium Tin Oxide Electrode with Carboxylated Single-walled Carbon Nanotubes

  • Aziz, Md.Abdul;Yang, Hae-Sik
    • Bulletin of the Korean Chemical Society
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    • v.28 no.7
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    • pp.1171-1174
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    • 2007
  • We have developed an electrochemical immunosensor that combines the electrocatalytic property of carbon nanotube and the low background current of indium tin oxide (ITO) electrode. A partial monolayer of carboxylated single-walled carbon nanotube (CCNT) is covalently formed on an ITO electrode modified with amine-terminated phosphonic acid. Nonspecifically adsorbed avidin on the hydrophobic sidewalls of CCNT is used to immobilize biotinylated antibody and to reduce the nonspecific binding to CCNT. The biotinylated antimouse IgG bound on avidin and the antimouse IgG conjugated with alkaline phosphatase (ALP) sandwiches a target mouse IgG. ALP catalyzes the conversion of p-aminophenyl phosphate monohydrate into p-aminophenol, which is electrocatalytically oxidized to p-quinone imine on CCNT surface. Moderate electrocatalytic electrode obtained with the combination of CCNT and ITO allows low detection limit (0.1 ng/ mL).

Properties of indium tin oxide thin films annealed in vacuum (진공에서 열처리된 ITO 박막의 특성)

  • 이임연;이기암
    • Korean Journal of Optics and Photonics
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    • v.11 no.3
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    • pp.152-157
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    • 2000
  • Post-deposition vacuum annealing effects in electron-bearn-evaporated indium tin oxide (ITO) films have been investigated by the change of transmittance, sheet resistance and crystalline structure with annealing temperature ( $200-335^{\circ}C$) and oxygen partial pressure ($1\times^10^{-5}-1$\times10^{-4} torr$) in air and vacuum. The sarnples were polycrystalline films with a preferred orientation in the (222) plan. High quality films with sheet resistance as low as 62 Q/O and transmittance over 99% (absentee layer at 500 nm) have been obtained by suitably controlling the vacuum annealing pararneters.neters.

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Characteristics of Laser Direct Patterned Indium Tin Oxide Layer by Overlapping Rates of Laser Beam

  • Li, Zhao-Hui;Ahn, Min-Hyung;Choi, Kyung-Min;Im, Seung-Hyeok;Jung, Kyung-Seo;Cho, Eou-Sik;Kwon, Sang-Jik
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1496-1499
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    • 2009
  • A diode-pumped Nd:$YVO_4$ laser was used to obtain indium tin oxide (ITO) patterns on glass substrate with various overlapping rates. The results showed that the overlapping rate of laser beam influences on the edge structure of ITO pattern and the surface roughness of ablated groove bottom. At a laser repetition rate of 40 kHz, the optimized condition of overlapping rate was 75 %.

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Etch characteristics of ITO(Indium Tin Oxide)using ${SF_6}/{O_2}$-gas ECR(Electron Cyclotron Resonance) plasmas (ECR을 이용한 ${SF_6}/{O_2}$ 가스 플라즈마에 의한 ITO의 식각 특성연구)

  • 권광호;강승열;김곤호;염근영
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.7
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    • pp.563-567
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    • 2000
  • We presented the etch results of indium-tin oxide thin films by using SF$_{6}$/O$_2$gas electron cyclotron resonance plasma and conducted X-ray phtoelectron spectroscopy and quadrupole mass spectrometer analyses for the etch characteristics. The etch rate of the films was greatly dependent on that of oxygen which was the major constituent element of the films. The oxygen was removed by the forms like $O_2$or SOF$_2$. We examined the ratio of atomic content of O and In and the change of this ratio was related to the removal rate of InF$_{x}$ and the S-metal bonding.ing.

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Indium Tin Oxide (ITO) Coatings Fabricated using Nanoparticle Slurry and Sol

  • Cheong, Deock-Soo;Yun, Dong-Hun;Kim, Dong-Hwan;Han, Kyoung-R.
    • Journal of the Korean Ceramic Society
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    • v.48 no.6
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    • pp.516-519
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    • 2011
  • Indium tin oxide (ITO) coatings were made using an ITO slurry and an ITO sol. This was achieved by dispersing nanosized ITO powder in a mixed solvent without any dispersant and developing an adhesive ITO sol from indium acetate and tin tetrachloride in a mixture of DMF and n-butanol. Coating was carried out in one step by spin coating an ITO slurry, which was then followed by an ITO sol over it. Here, the sol penetrates into the nano ITO particle layers to make them adhere to each other as well as to a glass substrate. This is then followed by sintering at 500$^{\circ}C$ for 1 h to produce a uniform film consisting of ITO particles of about 50 nm and 10 nm. ITO films were obtained with sheet resistances from 450 to 1500 ohm/${\Box}$ by varying spin speed and concentration. Transmittance is higher than 90% at 550 nm.

Properties of Indium Tin Oxide Multilayer Fabricated by Glancing Angle Deposition Method

  • Oh, Gyujin;Lee, Kyoung Su;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.367-367
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    • 2013
  • Commercial applications of indium tin oxide (ITO) can be separated into two useful areas. As it is perceived to bear electrical properties and optical transparency at once, its chance to apply to promising fields, usually for an optical device, gets greater in the passing time. ITO is one of the transparent conducting oxides (TCO), and required to carry the relative resistance less than $10^{-3}{\Omega}$/cm and transmittances over 80 % in the visible wavelength of light. Because ITO has considerable refractive index, there exist applications for anti-reflection coatings. Anti-reflection properties require gradual change in refractive index from films to air. Such changes are obtained from film density or nano-clustered fractional void. Glancing angle deposition (GLAD) method is a well known process for adjusting nanostructure of the films. From its shadowing effects, GLAD helps to deposit well-controlled porous films effectively. In this study, we are comparing the reference sample to samples coated with controlled ITO multilayer accumulated by an e-beam evaporation system. At first, the single ITO layer samples are prepared to decide refractive index with ellipsometry. Afterwards, ITO multilayer samples are fabricated and fitted by multilayer ellipsometric model based on single layer data. The structural properties were measured by using atomic force microscopy (AFM), and by scanning X-ray diffraction (XRD) measurements. The ellipsometry was used to determine refractive indices and extinction coefficient. The optical transmittance of the film was investigated by using an ultraviolet-visible (UV-Vis) spectrophotometer.

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Environmental Impacts Assessment of ITO (Indium Tin Oxide) Using Material Life Cycle Assessment (물질전과정평가(MLCA)를 통한 투명전극 ITO (Indium Tin Oxide)의 환경성 평가)

  • Lee, Soo-Sun;Lee, Na-Ri;Kim, Kyeong-Il;Hong, Tae-Whan
    • Clean Technology
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    • v.18 no.1
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    • pp.69-75
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    • 2012
  • In this study, we executed an environmental impact assessment about recycling of ITO (Indium Tin Oxide), used for touch panel. ITO is mainly used to make transparent conductive coatings for touch and flat screen LCD (Liquid Crystal Display), ELD (Emitting Light Device), PDP (Plasma Display Panel). This demand is increasing little by little. but form current status, ITO is discarded than recycling. It is important to recycling ITO for national strategies about resource conservation, and reduce environmental burden. Also Landfill or incineration of ITO cloud be harmful to the human health in the long-term. Material Life Cycle Assessment method (MLCA) was conducted for comparison landfill and recycling of ITO. MLCA would provide more information for environmental issues and potential environmental impacts of ITO. The study includes two scenarios, the basic scenario is recycling of ITO (10, 20, 30%) and the other scenario is landfill of ITO. In addition, amount of carbon dioxide and energy were calculated.

Trends of Recycling of Indium-Tin-Oxide (ITO) Target Materials for Transparent Conductive Electrodes (TCEs) (투명전극용 인듐 주석 산화물 타겟 소재의 재자원화 동향)

  • Hong, Sung-Jei;Lee, Jae Yong
    • Clean Technology
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    • v.21 no.4
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    • pp.209-216
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    • 2015
  • Indium-Tin-Oxide (ITO) is a material that is widely used for transparent conductive electrodes (TCEs). Indium (In), chief element of the ITO, is expected to be depleted in the near future owing to its high cost and limited reserves. To overcome the issue, ITO has to be retained by recycling redundant ITO targets after manufacturing processes. In this article, we proposed an efficient recycling way of the redundant ITO targets with investigation of the current recycling tendencies in domestic and foreign countries. As a result, it was revealed that only In is recycled from the redundant targets in domestic and Japan. As well, fabrication of TCEs is being researched with ITO nanoparticles solutions. However, since the TCEs fabricated with ITO target is superior to those with other materials, it is thought that establishment of regeneration technology of ITO itself is demanded for an efficient recycling and fabrication of ITO target.

Fabrication of Indium Tin Oxide (ITO) Transparent Thin Films and Their Microwave Shielding Properties (Indium Tin Oxide (ITO) 투광성 박막의 제조 및 전자파 차폐특성)

  • Kim, Yeong-Sik;Jeon, Yong-Su;Kim, Seong-Su
    • Korean Journal of Materials Research
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    • v.9 no.11
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    • pp.1055-1061
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    • 1999
  • Indium Tin Oxide (ITO) films were fabricated by vacuum deposition technique and their microwave shielding properties were investigated for the application to the transparent shield material. The vacuum coating was conducted in a RF co-sputtering machine. The film composition and structure associated with the sputtering conditions (argon and oxygen pressure. substrate temperature. RF input power) were investigated for the attainment of high electrical conductivity and good transparency. The electrical conductivity of IT0 films fabricated under the optimum deposition conditions (substrate temperature : $300^{\circ}C$. Ar flow rate : 20 sccm, Oxygen flow rate : 10 sccm, In/Sn input power : 50/30 W) showed 5.6$\times10^4$mho/m. The optical transparency is also considerably good. The microwave shielding properties including the dominant shielding mechanism are investigated from the electrical conductivity, thickness and skin depth of the ITO films. The total shielding effectiveness is then estimated to be 26 dB, which provides a suggestion that the IT0 films can be effectively used as the transparent shield material.

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