• Journal of Sensor Science and Technology
• /
• v.10 no.3
• /
• pp.187-195
• /
• 2001

A wireless telemetry measurement system, using ISFETs, was developed for environmental monitoring applications, industrial processes, medical treatments and so on. This system is composed of the measurement part located at remote site and a personal computer(PC) which control whole instrument process. The measurement part transmits measured data to the PC by RF transceiver, and transmitted data are analyzed and handled in the PC. Proposed system utilizing time division multiplexing for the transmission of 3channel ISFET signal. The measurement part has an identification number(ID) so that the PC controls many measurement parts separately. Experiments were performed using pH-ISFETs, and the implemented system operates well within designed specification and accuracy of 0.1 pH.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.238-238
• /
• 2011

Ion sensitive field effect transistor (ISFET)는 용액의 이온 농도를 측정하는 반도체 센서로, 1970년 Bergveld에 의해 처음으로 제안되었다. ISFET가 제안된 이래로, 제조공정이 간단하고 감지막의 감지 특성 평가가 용이한 electrolyte-insulator-semiconductor (EIS) pH센서 또한 지속적으로 연구되었다. EIS pH센서는 작은 소자 크기, 견고한 구조, 빠른 응답속도와 CMOS공정과의 호환성이 좋다는 장점이 있다. EIS 또는 ISFET 센서를 이용하여 생물학적 요소의 신호 감지 특성을 평가함에 있어 소자의 signal to noise 비율이 우수해야 한다. EIS pH센서의 높은 signal to noise 비율을 얻기 위해, 소자의 표면적을 증가시키거나 감지막으로 유전상수가 높은 물질을 사용하여 출력 특성을 향상시켜야 한다. 본 연구에서는 trench구조와 SiO2/HfO2/Al2O3 (OHA) 적층 감지막을 갖는 EIS pH센서를 제작하여 출력 특성을 증가시키는 실험을 실시하였다. 120 nm, 380 nm, 780 nm의 다양한 깊이를 가진 trench를 형성하였으며, trench 깊이에 따른 출력특성을 비교하였다. 또한, 제작된 EIS 소자의 pH감지 특성을 분석하였다. 제작된 EIS소자의 감지막 중 SiO2는 Si와 high-k물질의 계면 상태를 보완하기 위한 완충막으로 성장되었고, HfO2는 높은 유전상수를 가지고 있어 signal to noise 비율을 향상시키는 물질로 증착되었다. 최종적으로 Al2O3는 pH용액과의 화학적 손상을 막기 위한 물질로 증착되었다. 실험 결과, trench 깊이가 깊어질수록 출력값이 증가하였고 이는 signal to noise 비율이 향상되는 것을 의미한다. 결론적으로 trench 형성을 통한 표면적 증가와 high-k물질을 적층한 감지막으로 인해 높은 출력 특성을 갖는 우수한 EIS 바이오센서를 제작할 수 있었다.

• Journal of Sensor Science and Technology
• /
• v.8 no.4
• /
• pp.320-326
• /
• 1999

A small cartridge, with a nozzle system for washing off the dirt from the surfaces of sensing gates, was fabricated. The proposed nozzle structure was designed for cartridge by using the simulation tool of fluid (CFD-ACE). Whole size of the fabricated cartridge by using micromachining techniques is about $2.6\;cm{\times}1.5\;cm$, the size of the washing nozzle is $0.2\;mm{\times}0.6\;mm$ and its dead volume is only about $20\;{\mu}l$. A micro-reference electrode was achieved by employing a differential system with ISFETs/QRE (quasi-reference electrode)/REFET (reference field-effect transistor). Metal electrodes was deposited at both ends of blowing channel were used to check the presence of bubble in the microchannel. The pH-ISFET was inserted into the fabricated cartridge and the washing effect of the nozzle system in cartridge was invested.

• Journal of Sensor Science and Technology
• /
• v.6 no.4
• /
• pp.307-315
• /
• 1997

In this paper, a sample chamber which provide easy replacement of ISFET sensor and consume only small sample volume for electrolyte analysis is designed and a 4-channel electrolyte analyzer employing 2-point calibration method is implemented. In addition, we proposed sample loading detection circuit for minimizing sample and calibration solutions and implemented it. Developed electrolyte analyzer consists of control system part and flow system part. For the effective control of the developed hardware, system software is developed as three individual routines ; measuring routine, calibration routine and washing routine.

• Journal of Sensor Science and Technology
• /
• v.1 no.2
• /
• pp.101-106
• /
• 1992

pH-ISFETs, the semiconductor pH sensors, were combined with immobilized enzyme membranes to prepare FET type urea and glucose sensors and its operational characteristics were investigated. Photolithography techniques were applied to immobilize enzymes on the $H^{+}$ sensing membrane of the pH-ISFET with photo-sensitive polymers, PVA-SbQ. Fabricated urea and glucose sensors could determine $0.5{\sim}50{\;}mg/dl$ urea concentrations and $10{\sim}1000{\;}mg/dl$ glucose concentrations, respectively.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.242-242
• /
• 2010

SiO2박막을 이온 감지막으로 이용한 pH농도센서를 제작하였다. 현재 많은 연구중인 pH센서, pH-ISFET(pH-Ion Sensitive Field Effect Transistor)는 용액과 기준전극간의 전기화학적 변위차를 이용하여 pH를 센싱한다. pH-ISFET는 기존 CMOS공정을 그대로 이용할 수 있고, 이온감지막의 변화만으로 다양한 센서를 제작할 수 있어 최근 많은 연구가 진행 중이다. 하지만 FET를 제작하기 위한 공정의 복잡성과 용액의 전위를 정해주고 FET에 바이어스를 인가해줄 기준전극이 반드시 필요하다는 제한성이 있다. 따라서 본 연구에서는 SOI 기판을 이용하여 간단한 구조의 pH센서를 제작하였다. 센서는 (100)결정면을 가지는 p-타입 SOI(Silicon On Insulator)기판을 사용하였으며 포토리소그래피 공정을 이용하여 back-gated MOSFET구조로 제작하였다. 이온감지막으로 사용할 SiO2박막은 RF 스퍼터링을 이용하여 $100{\AA}$ 증착하였다. 바이어스는 기존 pH-ISFET와는 다르게 기준전극 대신 기판을 backgate로 사용하여 FET에 바이어스를 인가해 주었다. pH 용액 주입을 위해 PDMS재질의 챔버를 제작하고 실리콘글루를 이용하여 센서에 부착하였다. pH12부터 pH4까지 단계적으로 누적시키며 챔버에 주입하였고, pH에 따른 드레인전류의 변화를 관찰하였다. pH용액을 챔버에 주입시, pH농도에 따라 제작된 센서의 문턱전압이 오른쪽으로 이동하는 결과를 관찰할 수 있었다. 결과적으로, 구조가 간단한 pseudo MOSFET을 이용하여 pH센서의 적용가능성을 확인하였으며 SiO2박막 역시 본 pH센서의 이온감지막의 역할과 센서의 안정성을 향상시킬 수 있다는 점을 확인하였다.

• Applied Chemistry for Engineering
• /
• v.24 no.1
• /
• pp.1-9
• /
• 2013

As the medical paradigm is changing from disease treatment to disease prevention and an early diagonosis, the demand to develop techniques for the detection of minute concentrations of biomolecules is increasing. Among the various techniques to sense the minute concentration of biomolecules, the biosensors utilizing the matured semiconductor techniques are presented here. To understand such biosensors, the structure and working principle of a MOSFET (Metal-oxide-semiconductor field-effect transistor) which is the basic semiconductor device is firstly introduced, and then the ISFET (Ion sensitive FET), BioFET (Biologically modified FET), Nanowire FET, and IFET (Ionic FET) are introduced, and their applications to biomedical fields are discussed.

• Journal of the Korean Society for Precision Engineering
• /
• v.30 no.1
• /
• pp.128-133
• /
• 2013

Si Nanowire (Si-NW) arrays were fabricated by top-down method. A relatively simple method is suggested to fabricate suspended silicon nanowire arrays. This method allows for the production of suspended silicon nanowire arrays using anisotropic wet etching and conventional MEMS method of SOI (Silicon-On-Insulator) wafer. The dimensions of the fabricated nanowire arrays with the proposed method were evaluated and their effects on the Field Effect Transistor (FET) characteristics were discussed. Current-voltage (I-V) characteristics of the device with nanowire arrays were measured using a probe station and a semiconductor analyzer. The electrical properties of the device were characterized through leakage current, dielectric property, and threshold voltage. The results implied that the electrical characteristics of the fabricated device show the potential of being ion-selective field effect transistors (ISFETs) sensors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.11
• /
• pp.698-703
• /
• 2015

In this study, we fabricated the dual gate (DG) ion-sensitive field-effect-transistor (ISFET) with flexible polyimide (PI) extended gate (EG). The DG ISFETs significantly enhanced the sensitivity of pH in electrolytes from 60 mV/pH to 1152.17 mV/pH and effectively improved the drift and hysteresis phenomenon. This is attributed to the capacitive coupling effect between top gate and bottom gate insulators of the channel in silicon-on-transistor (SOI) metal-oxide-semiconductor (MOS) FETs. Accordingly, it is expected that the PI-EG based DG-ISFETs is promising technology for high-performance flexible biosensor applications.

• Journal of Electrical Engineering and information Science
• /
• v.2 no.3
• /
• pp.82-87
• /
• 1997

Ion-Sensitive Field-Effect Transistors(ISFETs) with LPCVD silicon nitride as a sensitive gate were fabricated on the basis of a CMOS process. The silicon nitride was deposited directly on a poly silicon gate-electrode. Using a specially designed measuring cell, the hydrogen ions sensing properties of the ISFET in liquid could be investigated without any bonding or encapsulation. At first, th sensitivity was estimated by simualtions according to the site-binding theory and the experimental results were analysed and compared with simulated results. The measured dta were in good agreement with the simulated results. The silicon nitride based ISFET has good linearity evaluated from correlation factor ($\geq$0.9998) and a mean pH-sensitivity of 56.8mV/pH. The maximum hysteresis width between forward(pH=3\longrightarrowpH=11)- and backward(pH=11\longrightarrowpH=3) titration was 16.7mV at pH=6.54.