• Title/Summary/Keyword: IRSP

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The analysis on properties of IR emitter unit device fabricated by using MEMS technology for Infrared Scene Projector (MEMS 기술을 이용하여 제작한 적외선 영상 투사용 에미터 단위 소자의 특성 분석)

  • Park, Ki Won;Shin, Young Bong;Kang, In-Ku;Lee, Hee Chul
    • Journal of the Institute of Electronics and Information Engineers
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    • v.54 no.3
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    • pp.31-36
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    • 2017
  • In this paper, designed infrared (IR) emitter device for infrared scene projector (IRSP) which is used for evaluating the performance of IR sensor systems was simulated by using finite element analysis (FEA) tool and fabricated by using MEMS (Micro Electro-Mechanical System) technology. The performance of the fabricated IR emitter unit device was characterized in the vacuum chamber by using IR image microscope for MWIR($3{\sim}5{\mu}m$), which showed 423K apparent temperature (Tapp) and 22msec time constant (${\tau}$).

A Read-In Integrated Circuit for IR Scene Projectors Adopting a Sub-Frame Control Technique for Minimizing the Temperature Loss (온도 손실의 최소화를 위해 Sub-Frame 제어 기법을 적용한 적외선 영상 투사기용 신호입력회로)

  • Shin, Uisub;Cho, Min Ji;Kang, Woo Jin;Jo, Young Min;Lee, Hee Chul
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.8
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    • pp.113-118
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    • 2016
  • In this paper, a read-in integrated circuit (RIIC) for IR scene projectors (IRSPs) adopting a sub-frame control technique is proposed, which minimizes the reduction of the apparent temperature of the IR images projected from IRSPs operating at a frame rate of 30 Hz. The proposed sub-frame control technique significantly reduces the amount of scene data loss on capacitors, which is caused by leakage currents flowing through MOSFET switches during holding periods, by dividing a unit frame into 8 sub-frames and refreshing the same scene data for each sub-frame. A current-drive RIIC was designed for the higher apparent temperature of IR radiated from the emitter, and it receives the scene data as a form of analog voltages from an external DAC. A prototype chip with a $64{\times}32$ RIIC array was fabricated using Magnachip/SKhynix $0.35{\mu}m$ 2-poly 4-metal CMOS process, and the measured maximum output data current is $230.3{\mu}A$. This amount of current ensures the projection of IR images whose maximum apparent temperature is $366.2^{\circ}C$ in the mid-wavelength IR (MWIR) when applied to a prototype emitter having a resistance of $15k{\Omega}$.