• Title/Summary/Keyword: ION

Search Result 16,666, Processing Time 0.038 seconds

Solid State Cesium Ion Beam Sputter Deposition

  • Baik, Hong-Koo
    • Proceedings of the Korea Association of Crystal Growth Conference
    • /
    • 1996.06a
    • /
    • pp.5-18
    • /
    • 1996
  • The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

  • PDF

ION BEAM APPLICATION

  • Baba Mamoru
    • Nuclear Engineering and Technology
    • /
    • v.38 no.4
    • /
    • pp.319-326
    • /
    • 2006
  • A brief review is presented on the ion beam application in science and technology. ion beams are used very effectively in various fields of science and technology, on the basis of advance in accelerator technology and experimental techniques for ion beam utilization. Recent progress in this field is reviewed in terms of the direct ion beam utilization like ion beam analysis, and the utilization of neutrons as secondary particles.

Hydrogen Ion Implantation Mechanism in GaAs-on-insulator Wafer Formation by Ion-cut Process

  • Woo, Hyung-Joo;Choi, Han-Woo;Kim, Joon-Kon
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.6 no.2
    • /
    • pp.95-100
    • /
    • 2006
  • The GaAs-on-insulator (GOI) wafer fabrication technique has been developed by using ion-cut process, based on hydrogen ion implantation and wafer direct bonding techniques. The hydrogen ion implantation condition for the ion-cut process in GaAs and the associated implantation mechanism have been investigated in this paper. Depth distribution of hydrogen atoms and the corresponding lattice disorder in (100) GaAs wafers produced by 40 keV hydrogen ion implantation were studied by SIMS and RBS/channeling analysis, respectively. In addition, the formation of platelets in the as-implanted GaAs and their microscopic evolution with annealing in the damaged layer was also studied by cross-sectional TEM analysis. The influence of the ion fluence, the implantation temperature and subsequent annealing on blistering and/or flaking was studied, and the optimum conditions for achieving blistering/splitting only after post-implantation annealing were determined. It was found that the new optimum implant temperature window for the GaAs ion-cut lie in $120{\sim}160^{\circ}C$, which is markedly lower than the previously reported window probably due to the inaccuracy in temperature measurement in most of the other implanters.

Effect of Nitrogen Ion Implantation on Wear Behavior of Biocompatible Ti Implant (질소이온 주입이 생체적합성 티타늄 임플란트의 마모특성에 미치는 영향)

  • Byeon, Eung-Seon;Kim, Dong-Su;Lee, Gu-Hyeon;Jeong, Yong-Su
    • 연구논문집
    • /
    • s.30
    • /
    • pp.137-145
    • /
    • 2000
  • Since the concept of osseointegration was introduced, titanium and titanium-based alloy materials have been increasingly used for bone-anchored metal in oralmaxillofacial and orthopedic reconstruction. Successful osseointegration has been attributed to biocompatibility and surface condition of metal implant among other factors. Although titanium and titanium alloys have an excellent over the metal ion release and biocompatibility, considerable controversy has developed over the metal ion and wear debris in vivo and vitro. In this study, nitrogen ion implantation technique was used to improve the corrosion resistance and wear property of titanium materials, ultimately to enhance the tissue reaction to titanium implants As ion implantation energy was increased, projected range of nitrogen ion the Ti substrate was gradually increased. Under condition of constant ion energy. atomic concentration of nitrogen was also increased with ion doses. The friction in Hank's solution was increased with ion doses. The friction coefficient of ion implanted specimens in HanK's solution was increased from 0.39, 0.47 to 0.52, 0.65 respectively under high energy and ion dose conditions. As increasing ion energies and ion dose, amount of wear was reduced.

  • PDF

DEVELOPMENT OF A NEW ION TRANSPORT CODE FOR PLANETARY IONOSPHERES WITH EXPLICIT TREATMENT OF ION-ION COLLISION

  • KIM YONG HA
    • Journal of The Korean Astronomical Society
    • /
    • v.38 no.2
    • /
    • pp.59-66
    • /
    • 2005
  • A new ion transport code for planetary ionospheric studies has been developed with consideration of velocity differences among ion species involving ion-ion collision. Most of previous planetary ionosphere models assumed that ions diffuse through non-moving ion and neutral background in order to consolidate continuity and momentum equations for ions into a simple set of diffusion equations. The simplification may result in unreliable density profiles of ions at high altitudes where ion velocities are fast and their velocity differences are significant enough to cause inaccuracy when computing ion-ion collision. A new code solves explicitly one-dimensional continuity and momentum equations for ion densities and velocities by utilizing divided Jacobian matrices in matrix inversion necessary to the Newton iteration procedure. The code has been applied to Martian nightside ionosphere models, as an example computation. The computed density profiles of $O^+,\;OH^+$, and $HCO^+$ differ by more than a factor of 2 at altitudes higher than 200 km from a simple diffusion model, whereas the density profile of the dominant ion, $O_2^+$, changes little. Especially, the density profile of $HCO^+$ is reduced by a factor of about 10 and its peak altitude is lowered by about 40 km relative to a simple diffusion model in which $HCO^+$ ions are assumed to diffuse through non-moving ion background, $O_2^+$. The computed effects of the new code on the Martian nightside models are explained readily in terms of ion velocities that were solved together with ion densities, which were not available from diffusion models. The new code should thus be expected as a significantly improved tool for planetary ionosphere modelling.

APPLICATION OF TIN ION-PLATING TO THE ORTHODONTIC APPLIANCE (교정용 장치물에 대한 TiN Ion Plating의 응용)

  • Kwon, Oh-Won;Kim, Kyo-Han
    • The korean journal of orthodontics
    • /
    • v.21 no.1 s.33
    • /
    • pp.7-16
    • /
    • 1991
  • To estimate the possibility of the application of TiN ion-plating to the orthodontic appliance, colorimetric properties, and characteristics of ion-plated film as well as adhesive strength of TiN film to the substrate and mechanical properties of ion-plated orthodontic appliance were investigated. The obtained results were as follows: 1) TiN ion-plated film had the colorimetric properties which were the hue of about 2.5 Y, the brightness of about 6, and the chroma of about 4 by the standard color chip of JIS. 2) TiN ion-plated film was $2{\mu}m$ in thickness and its deposition pattern was rather irregular. 3) TiN phase was confirmed on the X-ray diffraction pattern. 4) Critical load for delamination of ion-plated film from stainless steel band was 10N. 5) Tensile and yield strength of ion-plated specimen was increased about 10Kg $f/mm^2$, while elongation was decreased $1\%$ compairing to the values of the non ion-plated specimen.

  • PDF

Ion Beam Assisted Crystallization Behavior of Sol-Gel Derived $PbTiO_3$ Thin Films

  • Oh, Young-Jei;Oh, Tae-Sung;Jung, Hyung-Jin
    • The Korean Journal of Ceramics
    • /
    • v.2 no.1
    • /
    • pp.48-53
    • /
    • 1996
  • Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.

  • PDF

A Study on Electro-Optical Characteristics of the Ion Beam Aligned TN Cell on the DLC Thin Film (DLC 박막을 이용한 Ion Beam 배향 TN 셀의 전기광학특성에 관한 연구)

  • 황정연;조용민;노순준;이대규;백홍구;서대식
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.15 no.8
    • /
    • pp.726-730
    • /
    • 2002
  • Electro-optical (EO) performances of the ion beam (IB) aligned twisted-nematic (TN)-liquid crystal display (LCD) with ion beam exposure on the new diamond-like carbon (DLC) thin film surface were investigated. A good voltage-transmittance (V-T) curve of the ion beam aligned TN-LCD with oblique ion beam exposure on the DLC thin film surface for 1 min was observed. Also, the fast response time of the ion beam aligned TN-LCD with oblique ion beam exposure on the DLC thin film surface for 1 min can be achieved. Finally, the residual DC voltage of the ion beam aligned TN-LCD on the DLC thin film surface is almost the same as that of the rubbing aligned TN-LCD on a polyimide (Pl) surface.

Solvent Effect on the Dynamics of Radical Ion Pair Separation

  • Han, Chul-Hee
    • Journal of Photoscience
    • /
    • v.8 no.1
    • /
    • pp.33-37
    • /
    • 2001
  • Picosecond absorption spectroscopy has been employed in the study of the solvent dynamics of 1, 2, 4, 5-tetracyanobenzene/biphenyl derivative radical ion pairs, and the resulting rates of radical ion pair separation are faster in acetonitrile than in dichloromethane. In an effort to account quantitatively for such solvent effect on the rate of radical ion pair separation, an equation for the rate of radical ion pair separation is introduced, in which the rate depends exponentially on the electrostatic interaction energy in the radical ion pair. In our analysis of the types of electrostatic interaction energy based on the conducting spheres in dielectric continuum was chosen, and the rate equation employing this electrostatic energy provided information on the distance on the distance of radical ion pair separation and solvation energy of the radical ion pair, thereby providing quantitative explanation for the observed solvent effect on the rate of radical ion pair sepaaration.

  • PDF