• Proceedings of the Korea Information Processing Society Conference
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• 2000.10b
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• pp.1267-1270
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• 2000

위성통신 시스템은 기존의 지상망이나 광 케이블 기술에 비해 통신 대역폭의 유연성과 다중 접속능력, 이동통신, 광역성, 멀티포인트 및 브로드캐스팅 등의 본래의 특징으로 인해 초고속정보통신망 구축에 중요한 역할을 하게 된다. 특히 OBP (On-Board Processing) 기술을 적용하면 기존 위성통신 탑재장치의 수동적인 중계 기능 이외에 복조/재변조, 부호/복호화 및 오류정정, 중계기 및 빔간의 상호 연결/절체 등의 새로운 기능이 추가되어 능동적인 중계를 가능하게 함으로써 통신 품질의 향상, 통신 링크의 전송 효율 개선, 전송 용량 증대 등의 장점을 갖고있다. OBP 탑재 위성 B-IDSN 중계망은 하나의 거대한 가상 ATM 교환기로 간주되고, 여러중계 지구국들중 목적 중계 지구국으로 패킷들을 직접 라우팅 할 수 있는 장점이 있다. 본 논문은 OBP 탑재 위성 B-ISDN 연동 프로토콜 연구를 수행하는 것으로서, 위성 B-ISDN 구조와 각 지구국별 신호 기능 및 B-IDSN 신호 시스템인 DSS2 계층 3 신호 프로토콜, B-ISUP 프로토콜, S-BISUP 프로토콜의 구조를 분석하였다. 또한 점-대-다지점을 위한 B-ISDN의 연결과 소유권 및 각각의 프로토콜에 대한 메시지와 프리미티브를 정의하여, 이를 토대로 OBP 탑재 위성 B-IDSN 연동 프로토콜의 기본 호 처리 절차를 설계 및 구현하고, 이를 테스트하였다.

• Journal of Industrial Technology
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• v.20 no.B
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• pp.227-232
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• 2000

ISDN AO/DI provides efficient communication. It dynamically allocates channels for bandwidth, which is key component for packet data communication. In this paper, we analyze performance improvement of ISDN AO/DI system with buffering scheme and compare with AO/DI system without buffering scheme. From the simulation of AO/DI with buffering scheme, we see that the required bandwidth is less than of the AO/DI system without buffering scheme.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Journal of Preventive Medicine and Public Health
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• v.41 no.4
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• pp.214-218
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• 2008

Bioterrorism events have worldwide impacts, not only in terms of security and public health policy, but also in other related sectors. Many countries, including Korea, have set up new administrative and operational structures and adapted their preparedness and response plans in order to deal with new kinds of threats. Korea has dual surveillance systems for the early detection of bioterrorism. The first is syndromic surveillance that typically monitors non-specific clinical information that may indicate possible bioterrorism-associated diseases before specific diagnoses are made. The other is infectious disease specialist network that diagnoses and responds to specific illnesses caused by intentional release of biologic agents. Infectious disease physicians, clinical microbiologists, and infection control professionals play critical and complementary roles in these networks. Infectious disease specialists should develop practical and realistic response plans for their institutions in partnership with local and state health departments, in preparation for a real or suspected bioterrorism attack.