• 한국표면공학회지
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• 제45권4호
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• pp.168-173
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• 2012

A real-time monitoring of an immersed antenna type inductively coupled plasma (ICP) was done with optical emission spectroscopy (OES) to check the reports that sputtered atom density is decreasing as the ICP power is increased. At 10 mTorr pressure of Ar, Mg was sputtered by a bipolar pulsed power supply into 2 MHz ICP which has an insulator covered 2.5 turn antenna. Emitted light was collected in two different positions: above the target and inside the ICP region. With 100 W of Mg sputtering power, the intensities of Mg I (285.06 nm), Mg II (279.48 nm), Ar I (420.1 nm) were increased constantly with ICP power from 100 W to 600 W. At 500 W, the intensity of $Mg^+$ exceeded that of Mg under PID controlled discharge voltage of 180 V. The ratio of Mg II/Mg I was increased from 0.45 to 2.71 approximately 6 times.

• 분석과학
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• 제32권4호
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• pp.121-130
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• 2019

Alumina is one of the most important ceramic materials because of its useful physical and chemical properties. Recently, high-purity alumina has been used in various industrial fields. This leads to increasing demand for reliable elemental analysis of impurities in alumina samples. However, the chemical inertness of alumina makes the sample preparation for conventional elemental analysis a tremendously difficult task. Herein, we demonstrated the feasibility of laser ablation for effective sampling of alumina powder. Laser ablation performs sampling rapidly without any chemical reagents and also allows simultaneous optical emission spectroscopy and mass spectrometry analyses. For six alumina samples including certified reference materials and commercial products, laser-induced breakdown spectroscopy (LIBS) and laser-ablation inductively-coupled plasma mass spectrometry (LA-ICP-MS) analyses were performed simultaneously based on a common laser ablation sampling. LIBS was found to be useful to quantify alkali and alkaline earth metals with limits-of-detection (LODs) around 1 ppm. LA-ICP-MS could quantify transition metals such as Ti, Cu, Zn, and Zr with LODs in the range from a few tens to hundreds ppb.

• 한국표면공학회지
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• 제37권3호
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• pp.164-168
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• 2004

Polycrystalline silicon thin films were deposited by inductively coupled plasma (ICP) assisted magnetron sputtering using a gas mixture of Ar and $H_2$ on a glass substrate at $250^{\circ}C$. At constant Ar mass flow rate of 10 sccm, the working pressure was changed between 10mTorr and 70mTorr with changing $H_2$ flow rate. The effects of RF power applied to ICP coil and $Ar/H_2$ gas mixing ratio on the properties of the deposited Si films were investigated. The crystallinity was evaluated by both X-ray diffraction and Raman spectroscopy. From the results of Raman spectroscopy, the crystallinity was improved as hydrogen mixing ratio was increased up to$ Ar/H_2$=10/16 sccm; the maximum crystalline fraction was 74% at this condition. When RF power applied to ICP coil was increased, the crystallinity was also increased around 78%. In order to investigate the surface roughness of the deposited films, Atomic Force Microscopy was used.

• 방사성폐기물학회지
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• 제21권1호
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• pp.43-53
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• 2023

Sulfide concentrations critically affect worker safety and the integrities of underground facilities, such as deep geological repositories for spent nuclear fuel. Sulfide is highly sensitive to oxygen, which can oxidize sulfide to sulfate. This can hinder precise measurement of the sulfide concentration. Hence, a literature review was conducted, which revealed that two methods are commonly used: the methylene blue and sulfide ion-selective electrode (ISE) methods. Inductively coupled plasma optical emission spectroscopy (ICP-OES) was used for comparison with the two methods. The sulfide ISE method was found to be superior as it yielded results with a higher degree of accuracy and involved fewer procedures for quantification of the sulfide concentration in solution. ICP-OES results can be distorted significantly when sulfide is present in solution owing to the formation of H₂S gas in the ICP-OES nebulizer. Therefore, the ICP-OES must be used with caution when quantifying underground water to prevent any distortion in the measured results. The results also suggest important measures to avoid problems when using ICP-OES for site selection. Furthermore, the sulfide ISE method is useful in determining sulfide concentrations in the field to predict the lifetime of disposal canisters of spent nuclear fuel in deep geological repositories and other industries.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.804-808
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• 1998

The inductively coupled plasma(ICP) etching of platinum with BCl$_3$/Cl$_2$ gas chemistry has been studied. X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical binding states of the etched surface. The plasma characteristics was extracted from optical emission spectroscopy (OES) and a single Langmuir probe. In this case of Pt etching using BCl$_3$/Cl$_2$ gas chemistries, the result of OES and Langmuir probe showed the increase of Cl radicals and ion current densities in the plasmas with increasing Cl$_2$ gas ratio. At the same time, XPS results indicated that the intensities of Pt 4f decreased with increasing Cl$_2$ gas ratio. The decrease of Pt 4f intensities implies the increase of residue layer thickness on the etched Pt surface.

• 전기학회논문지
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• 제56권1호
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• pp.132-138
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• 2007

Carbon nanotubes (CNTs) arc grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. The structural and field-emissive properties of the CNTs grown are characterized in terms of the substrate-bias applied. Characterization using the various techniques, such as field-omission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), Auger spectroscopy (AES), and Raman spectroscopy, shows that the structural properties of the CNTs, including their physical dimensions and crystal qualities, as well as the nature of vertical growth, are strongly dependent upon the application of substrate bias during CNT growth. It is for the first time observed that the provailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negatively substrate-biasing would promote the vertical-alignment of the CNTs grown, compared to positively substrate-biasing. However, the CNTs grown under the positively-biased condition display a higher electron-emission capability than those grown under the negatively-biased condition or without any bias applied.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권3호
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• pp.111-116
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• 2004

The Ni/SiC Schottky diode was fabricated with the $\alpha$-SiC thin film grown by the ICP-CVD method on a (111) Si wafer. $\alpha$-SiC film has been grown on a carbonized Si layer in which the Si surface was chemically converted to a very thin SiC layer achieved using an ICP-CVD method at $700^{\circ}C$. To reduce defects between the Si and $\alpha$-SiC, the surface of the Si wafer was slightly carbonized. The film characteristics of $\alpha$-SiC were investigated by employing TEM (Transmission Electron Microscopy) and FT-IR (Fourier Transform Infrared Spectroscopy). Sputterd Ni thin film was used as the anode metal. The boundary status of the Ni/SiC contact was investigated by AES (Auger Electron Spectroscopy) as a function of the annealing temperature. It is shown that the ohmic contact could be acquired beyond a 100$0^{\circ}C$ annealing temperature. The forward voltage drop at 100A/cm was I.0V. The breakdown voltage of the Ni/$\alpha$-SiC Schottky diode was 545 V, which is five times larger than the ideal breakdown voltage of the silicon device. As well, the dependence of barrier height on temperature was observed. The barrier height from C- V characteristics was higher than those from I-V.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.88-88
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• 2003

Optical Emission Spectroscopy(OES) is a very important technology for real-time monitoring of plasma in a reactor during dry etching process. OES technology is non-invasive to the plasma process. It can be used to collect information on excitation and recombination between electrons and ions in the plasma. It also helps easily diagnose plasma intensity and monitor end-point during plasma etch processing. We studied high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar plasma with an OES as a function of processing pressure, RIE chuck power, ICP source power and gas composition. The scan range of wavelength used was from 400 nm to 1000 nm. It was found that OES peak Intensity was a strong function of ICP source power and processing pressure, while it was almost independent on RIE chuck power in BCl$_3$-based planar ICP processes. It was also worthwhile to note that increase of processing pressure reduced negatively self-induced dc bias. The case was reverse for RIE chuck power. ICP power and gas composition hardly had influence on do bias. We will report OES results of high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar Plasma in detail in this presentation.

• 한국진공학회지
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• 제7권3호
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• pp.176-186
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• 1998

Si 기판 위에 3종의 Pt-Co 합금박막 (Pt66-Co34, Pt40-Co60, Pt18-Co82)과 순수한 Pt, Co 박막 시료를 제작하여 표면 조성분석의 정량화 및 표준화를 위한 표준시료로 제안하 였다. in-istu X-ray photoelectron spectroscopy(XPS)분석에 의해 증착된 이원 합금박막의 조성이 정확히 조절되었으며, 합금박막의 실제 조성은 유도결합플라즈마-원자방출분광법 (inductively coupled plasma-atomic emission spectroscopy: ICP-AES)과 러더퍼드 후방산 란분광법(Ruthford back-scattering spectrometry: RBS)에 의해 결정되었다. in-situ XPS 결과와 ICP에 의한 조성을 비교한 결과 매질 효과를 고려하면 비교적 정확한 조성을 구할 수 있음이 확인되었다. 이 시료를 이용한 XPS와 Auger electron spectroscopy(AES)에 의한 국내 공동분석 결과는 약4%내외의 큰 편차를 보이고 있지만, 평균 조성 값은 약1%의 오차 범위 내에서 두 방법에 의한 결과가 서로 잘 일치하였다. 이온빔 스퍼터링에 의해 Pt조성이 증가된 표면층이 형성되어 정확한 조성분석을 위해서는 선택스퍼터링에 의한 표면 변형을 정량적으로 함을 알았다.

• 한국건축시공학회지
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• 제23권2호
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• pp.113-121
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• 2023

본 연구에서는 부산물(석분 슬러지, 고로슬래그, 제강슬래그, 폐콘크리트 슬러지, 바텀애시) 5종과 클링커 내 중금속 분석을 위한 레이져 유도 플라즈마 분광법(LIBS) 적용성과 재현성 검토를 실험적으로 수행하였다. 클링커를 포함한 6종의 부산물 시료에 대한 ICP-MS, XRF, LIBS 분석 결과, 정량적 분석에서 ICP와 XRF의 차이가 확인되었으나, LIBS 분석은 표준분석과 일치하지 않고 시료의 정성적인 분석만 가능하였다. LIBS를 통한 정량적 분석을 위하여 Cd, Pb, Hg에 대하여 LIBS 분석 파장(Cd - 214.44nm, Pb - 405.78nm, Hg - 253.65nm)을 설정하였고, 농도별(1~1000ppm) 용액에 함침하여 건조시킨 멤브레인 표면에 레이져를 조사한 결과, 스펙트럼 강도와 농도 사이의 상관관계를 확인할 수 있었다.