• Journal of Korean Association for Spatial Structures
• /
• v.17 no.4
• /
• pp.93-102
• /
• 2017

Wireless MEMS sensors have common features such as wireless communication, data measurement, embedded processing, battery-based self-power, and low cost, and increased measurement effectiveness. Wireless MEMS sensors enable efficient SHM without interfering with location because there is no requirement for triboelectric noise and cumbersome cables. However, there is little research on the communication distance with sensors and data. For instance, existing researches have limited communication distance experiments in civil engineering bridges. It is also necessary to investigate the characteristics of dynamic behavior and the communication distance of architectural structures with different wireless transmission/reception environments. Therefore, in a building structure with walls and slabs instead of open spaces, MEMS sensors and data loggers were used as distance experiments where communication disturbance between the vertical slab and the horizontal wall could actually be communicated.

• Journal of the Korean Ceramic Society
• /
• v.37 no.2
• /
• pp.164-167
• /
• 2000

Flue gases in the iron foundry consist of 15~20% CO2 as an air pollution gas whose emission should be mitigated in order to protect the environment. In the present study, ultrafine powders of NixZn1-xFe2O4 as a potential catalyst for the CO2 decomposition were prepared by the coprecipitation methods. Oxygen deficient ferrites (MeFe2O4-$\delta$) can decompose CO2 as C and O2 at a low temperature of about 30$0^{\circ}C$. The XRD result of synthesized ferrites showed the spinel structure of ferrites and ICP-AES and EDS quantitative analyses showed the composition similar with initial molar ratios of the mixed solution prior to reaction. The BET surface area of the (Ni, Zn)-ferrites was about 77~89.5$m^2$/g and their particle size was observed about 10~20 nm. The CO2 decomposition efficiency of the oxygen deficient (Nix, Zn1-x)-ferrites was the highest at x=0.3, and the ternary (Ni, Zn)-ferrites was better than that of binary Ni-ferrites.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.182-182
• /
• 2012

Plasma etching is used in various semiconductor processing steps. In plasma etcher, optical- emission spectroscopy (OES) is widely used for in-situ endpoint detection. However, the sensitivity of OES is decreased if polymer is deposited on viewport or the proportion of exposed area on the wafer is too small. Because of these problems, the object is to investigate the suitability of using plasma impedance monitoring (PIM) and self plasma optical emission spectrocopy (SPOES) with statistical approach for in-situ endpoint detection. The endpoint was determined by impedance signal variation from I-V monitor (VI probe) and optical emission signal from SPOES. However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ and SiNx layers are etched by fluorocarbon on inductive coupled plasma (ICP) etcher, if the proportion of $SiO_2$ and SiNx area on Si wafer are small. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance monitoring is compared with optical emission spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.32-32
• /
• 2011

Plasma etching is used in microelectronic processing for patterning of micro- and nano-scale devices. Commonly, optical emission spectroscopy (OES) is widely used for real-time endpoint detection for plasma etching. However, if the viewport for optical-emission monitoring becomes blurred by polymer film due to prolonged use of the etching system, optical-emission monitoring becomes impossible. In addition, when the exposed area ratio on the wafer is small, changes in the optical emission are so slight that it is almost impossible to detect the endpoint of etching. For this reason, as a simple method of detecting variations in plasma without contamination of the reaction chamber at low cost, a method of measuring plasma impedance is being examined. The object in this research is to investigate the suitability of using plasma impedance monitoring (PIM) with statistical approach for real-time endpoint detection of $SiO_2$ etching. The endpoint was determined by impedance signal variation from I-V monitor (VI probe). However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ film on Si wafer is etched by fluorocarbon plasma on inductive coupled plasma (ICP) etcher. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance analysis is compared with optical emission spectroscopy (OES). From impedance data, we tried to analyze physical properties of plasma, and real-time endpoint detection can be achieved.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
• /
• 1996.04a
• /
• pp.88-96
• /
• 1996

The characteristic analysis of fly ash generated from a fired power plant using bunker-C oil has been investigated. Ash size distribution by an optical microscopy with image processing technique, morphological shape by a scanning electron microscope(SEM) and microscope, chemical composition by the inductively coupled plasma emission spectrometry(ICP), and resistivity measurement as a function of temperature and moisture content by the resistivity meter are performed. A study of physical, chemical and electrical characteristics of bunker-C fly ash plays an important role of improving the performance of an electrostatic precipitator and protecting air pollution. The samples of bunker-C fly ash for analysis were collected from the electrostatic precipitator hopper of Ulsan Power Plant Unit 1 and Pusan Power Plant Unit 1. Mass median diameter(MMD) of bunker-C fly ash was measured 12.7${\mu}{\textrm}{m}$, while MMD of fly ash generated from the mixture of bunker-C oil(40%) and domestic anthracitic coal(60%) was 25.7${\mu}{\textrm}{m}$. The morphological structure of bunker-C fly ash consisted of fine particles of non-spherical shape. The primary chemical components of bunker-C fly ash were composed of SiO2(2.36%), Al2O3(4.91%), Fe2O3(14.33%) and C(11.84%). Resistivity of bunker-C fly ash was found to be increased with increasing temperature at the range of 100~15$0^{\circ}C$ and was measured 103~104 ohm-cm.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.61.1-61.1
• /
• 2010

$CuIn_{1-x}-GaxSe_2$ based materials with direct bandgap and high absorption coefficient are promising materials for high efficiency hetero-junction solar cells. CIGS champion cell efficiency(19.9%, AM1.5G) is very close to polycrystalline silicon(20.3%, AM1.5G). A reduction in the price of CIGS module is required for competing with well matured silicon technology. Price reduction can be achieved by decreasing the manufacturing cost and by increasing module efficiency. Manufacturing cost is mostly dominated by capital cost. Device properties of CIGS are strongly dependent on doping, defect chemistry and structure which in turn are dependent on growth conditions. The complex chemistry of CIGS is not fully understood to optimize and scale processes. Control of the absorber grain size, structural quality, texture, composition profile in the growth direction is important to achieving reliable device performance. In the present work, CIS nanoparticles were prepared by a simple wet chemical synthesis method and their structural and optical properties were investigated. XRD patterns of as-grown nanopowders indicate CIS(Cubic), $CuSe_2$(orthorhombic) and excess selenium. Further, as-grown and annealed nanopowders were characterized by HRTEM and ICP-OES. Grain growth of the nanopowders was followed as a function of temperature using HT-XRD with overpressure of selenium. It was found that significant grain growth occurred between $300-400^{\circ}C$ accompanied by formation of ${\beta}-Cu_{2-x}Se$ at high temperature($500^{\circ}C$) consistent with Cu-Se phase diagram. The result suggests that grain growth follows VLS mechanism which would be very useful for low temperature, high quality and economic processing of CIGS based solar cells.

• Journal of the Korean Society for Precision Engineering
• /
• v.28 no.1
• /
• pp.19-23
• /
• 2011

Recently, focused ion beam (FIB) applications have been investigated for the modification of VLSI circuit, the MEMS processing, and the localized ion doping, A multi aperture FIB system has been introduced as the demands of FIB applications for high speed and large area processing increase. A liquid metal ion source has problems, a large angular divergence and a metal contamination into a substrate. In this study, a gas ion source was introduced to replace a liquid metal ion source. The gas ion source generated inductively coupled plasma (ICP) in a quartz tube (diameter: 45 mm). Ar gas fed into the quartz was ionized by a 2 turned radio frequency antenna. The Ar ions were extracted by 2 extraction grids. The maximum extraction voltage was 10 kV. A numerical simulation was used to optimize the design of extraction grids and to predict an ion trajectory. As a result, the maximum ion current density was 38 $mA/cm^2$ and the spread of ion energy was 1.6 % for the extraction voltage.

• Proceedings of the Korean Radioactive Waste Society Conference
• /
• 2018.05a
• /
• pp.57-57
• /
• 2018

The electrorefining process is generally composed of two recovery steps in pyroprocessing - the deposit of uranium onto a solid cathode and the recovery of the remaining uranium and TRU elements simultaneously by a liquid cadmium cathode. The liquid cathode processing is necessary to separate cadmium from the actinide elements since the actinide deposits are dissolved or precipitated in a liquid cathode. Distillation process was employed for the cathode processing. It is very important to avoid a splattering of cadmium during evaporation due to the high vapor pressure. In this study, a multi-layer porous round cover was proposed and examined to develop a splatter shield for the Cd distillation crucible. Cadmium vapor can be released through the holes of the shield, whereas liquid drops can be collected in the multiple hemisphere. The collected drops flow on the round surface of the cover and flow down into the crucible. The crucible cover was fabricated and tested in the Cd distiller. The cover was made with three stainless steel round plates with a diameter of 33.50 mm. The distance between the hemispheres and the diameter of the holes are 10 and 1 mm, respectively. About 40 grams of Cd and about 4 grams of Bi was distilled at a reduced pressure for two hours at $470^{\circ}C$. After the Cd distillation experiment, cadmium was not detected and more than 90 % of Bi remained in the ICP-OES analysis. Therefore the crucible cover can be a candidate for the splatter shield of the Cd distillation crucible. Further development of the crucible cover is necessary for the decision of the optimum cover geometry and the operating conditions of the Cd distiller.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.105-105
• /
• 2009

$ZrO_2$ is one of the most attractive high dielectric constant (high-k) materials. As integrated circuit device dimensions continue to be scaled down, high-k materials have been studied more to resolve the problems for replacing the EY31conventional $SiO_2$. $ZrO_2$ has many favorable properties as a high dielectric constant (k= 20~25), wide band gap (5~7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2/Si$ structure. In order to get fine-line patterns, plasma etching has been studied more in the fabrication of ultra large-scale integrated circuits. The relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compound In this study, the surface kinetic properties of $ZrO_2$ thin film was investigated in function of Ch addition to $BCl_3/Ar$ gas mixture ratio, RF power and DC-bias power based on substrate temperature. The figure 1 showed the etch rate of $ZrO_2$ thin film as function of gas mixing ratio of $Cl_2/BCl_3/Ar$ dependent on temperature. The chemical state of film was investigated using x-ray photoelectron spectroscopy (XPS). The characteristics of the plasma were estimated using optical emission spectroscopy (OES). Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.145-145
• /
• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).