• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.510-510
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• 2012

반도체, 디스플레이, 태양광 등의 공정에서 사용되는 웨이퍼의 크기가 증가하고, 생산률이 플라즈마의 밀도에 비례한다는 연구 결과가 발표되면서 대면적 고밀도 플라즈마 소스 개발에 대한 연구가 활발히 진행되고 있다. 특히, ECR, ICP, Helicon plasma 등 고밀도 플라즈마 소스에 대한 관심이 높아지고 있다. 이에 따라, 여러 개의 ICP를 결합한 multiple ICP를 이용해 대면적 고밀도 플라즈마 소스 개발을 진행했다. Multiple ICP의 경우 각 ICP 소스에 같은 power (current)를 공급해야만 균일한 플라즈마 방전이 발생되어 균일도를 확보 할 수 있다. Current controller 같은 추가적인 장비를 설치하지 않고, power를 분배하는 transmission line을 coaxial 형태로 설계하고 같은 길이로 병렬 연결함으로써 각각의 ICP소스에서 균일한 플라즈마를 방전시킬 수 있었다. Power generator에서 보는 각 ICP의 total impedance는 각 ICP 소스의 impedance와 coaxial 형태의 transmission line의 characteristic impedance, frequency, 길이의 함수로 구할 수 있고, 이 total impedance가 일정하기 때문에 current가 균등하게 분배되어 각 ICP소스에 균등한 power 분배가 가능한 것이다. 실질적으로 ICP 소스의 impedance는 플라즈마 방전 유무에 따라 변화하기 때문에 일정하게 유지하는 것은 어렵다. Transmission line의 characteristic을 사용함으로써 ICP의 impedance의 변화에 상관없이 Total impedance를 일정하게 유지시킴으로써 균등한 power 분배가 가능하다는 것을 연구했다. Frequency는 13,56MHz, characteristic impedance를 $50{\Omega}$ (coaxial cable)으로 고정하고, ICP 소스의 플라즈마 방전 유무/antenna turn/소스 위치에 따른 total impedance를 transmission line의 길이에 따라 측정하고, 이를 이론값, 그래프와 비교하였다. 특정 length에서 플라즈마 방전 유무(ICP의 impedance 변화)와 상관없이 비교적 일정한 total impedance를 유지하는 것을 확인 했다. 이것은 특정 길이를 갖는 coaxial형태의 transmission line를 연결하면, total impedance는 플라즈마 방전 유무로 발생하는 ICP의 impedance 변화와 상관없이 일정하게 유지되어 각 ICP소스에 균등한 파워 분배가 가능하다는 것을 보여준 결과이다. 이것을 토대로 frequency에 따라(또는 characteristic impedance에 따라) 균등한 파워 분배가 가능한 coaxial 형태 transmission line의 특정 길이를 구할 수 있고, 대면적 소스에서 균등한 파워 분배를 위한 병렬연결에 적용할 수 있을 것이다.

• Korean Chemical Engineering Research
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• v.43 no.1
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• pp.76-79
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• 2005

Dry etching of NiFe, NiFeCo, and Ta for magnetic random access memory (MRAM) by inductively coupled plasmas (ICPs) of $Cl_2/Ar$ has been carried out. NiFe and NiFeCo showed maximum etch rates at a particular ICP source power, but the etch rate of Ta increased with the ICP source power. The etch rates of the magnetic thin films increased with the RF chuck power, but decreased with the operating pressure and the $Cl_2$ concentration. To avoid a corrosion problem by chlorine, the etched samples were rinsed with de-ionized water for 5 minutes after etching. The etch profile showed a clean and smooth surface at 50% $Cl_2$ concentration.

• The Transactions of the Korean Institute of Power Electronics
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• v.15 no.4
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• pp.274-281
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• 2010

This paper proposes a DFPS (Dual Frequency Power Source) impedance matching device for uniformity improvement of a semiconductor plasma etching system. The DFPS consists of two parts for safe plasma processing on large-area substrates. The first part is an ICP (Inductively Coupled Plasma) for high integration by using ferrite core. The second part is a CCP (Capacitive Coupled Plasma) to control uniformity of whole cells. Proposed DFPS can achieve high productivity improvement required for semiconductor equipment industry. The proposed plasma system is analyzed, simulated and experimentally verified with a matching equipment at 27.12MHz and 400kHz.

• Korean Journal of Clinical Laboratory Science
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• v.41 no.1
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• pp.31-36
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• 2009

The exposure of human beings to toxic trace metals (Cu, Zn) continues to be an important public health issue and concern. This study was conducted to assess the exposure to trace metals (Cu, Zn) in the general Korean population by inductively coupled plasma mass spectrometry (ICP-MS) and Atomic absorption spectrometry (AAS). Serum samples were obtained from 40 healthy volunteers. Specimens were collected in special container and we applied sample processing to minimize contamination. We used ICP-MS and AAS to analyze simultaneously the concentration of metals including copper, zinc. Distribution of trace metal levels in the general healthy population showed lower values. The results in this study can provide background data for clinical studies associated with trace metal exposure in the korean population.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.271-271
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• 2012

Many studies have been investigated on high density plasma source (Electron Cyclotron Resonance, Inductively Coupled Plasma, Helicon plasma) for large area source after It is announced that productivity of plasma process depends on plasma density. In this presentation, we will propose the new concept of the multiple source, which consists of a parallel connection of ICP sources and helicon plasma sources. For plasma uniformity, equivalent power (especially, equivalent current in ICP & Helicon) should distribute on each source. We design power feeding line as coaxial transmission line with same length of ground line in each source for equivalent power distribution. And we confirm the equivalent power distribution with simulation and experimental result. Based on basic study, we develop the plasma source for oxidation in semiconductor process. we will discuss the relationship between the processing parameters (With or WithOut magnet, operating pressure, input power ). In ICP, plasma density uniformity is uniform. In ICP with magnet (or Helicon) plasma density is not uniform. As a result, new design (magnet arrangement and gas distributor and etc..) are needed for uniform plasma density in ICP with magnet and Helicon.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2010.11a
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• pp.781-783
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• 2010

Chonbuk national university High-enthalpy plasma research center is under construction for 60kW and 200kw ICP(RF) Plasma system as Advance Material R&D and production equipment. The 60kW & 200kW ICP(RF) plasma systems will contribute to promote Korea's material industrial development and Thermal plasma technology.

• Journal of the Speleological Society of Korea
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• no.78
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• pp.9-15
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• 2007

The materials showing high structure dispersion with functional properties were developed on the quartz base and those were obtained by mechano-chemical reaction technology. Depending on the processing conditions and subsequent applications the materials produced by mechano-chemical reaction show concurrently magnetic, dielectric and electrical properties. The obtained magnetic-electrical powders classified by aggregate complex of their features as segnetomagnetics, containing a dielectric material as a carrying nucleus, particularly the quartz on that surface one or more layers of different compounds were synthesized having thickness up to 1050nm showing magnetic, electrical properties and others. The similarity of the structure of surface layers of quartz particles subjected to mechano-chemical processing and nano-structure cluspol (clusters in a polymer matrics) material was alsoconfirmed by the fact that the characteristics of ferromagnetic quartz of insulating nano-composite powder were changed with time, after its preparing process was completed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.88-88
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• 2003

Optical Emission Spectroscopy(OES) is a very important technology for real-time monitoring of plasma in a reactor during dry etching process. OES technology is non-invasive to the plasma process. It can be used to collect information on excitation and recombination between electrons and ions in the plasma. It also helps easily diagnose plasma intensity and monitor end-point during plasma etch processing. We studied high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar plasma with an OES as a function of processing pressure, RIE chuck power, ICP source power and gas composition. The scan range of wavelength used was from 400 nm to 1000 nm. It was found that OES peak Intensity was a strong function of ICP source power and processing pressure, while it was almost independent on RIE chuck power in BCl$_3$-based planar ICP processes. It was also worthwhile to note that increase of processing pressure reduced negatively self-induced dc bias. The case was reverse for RIE chuck power. ICP power and gas composition hardly had influence on do bias. We will report OES results of high density planar inductively coupled BCl$_3$ and BCl$_3$/Ar Plasma in detail in this presentation.

• KIPS Transactions on Software and Data Engineering
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• v.11 no.12
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• pp.525-530
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• 2022

Although the iterative closest point (ICP) algorithm has been widely used to align two point clouds, ICP tends to fail when the initial orientation of the two point clouds are significantly different. In this paper, when two triangular meshes A and B have significantly different initial orientations, we present an algorithm to align them. After obtaining weighted centroids for meshes A and B, respectively, vertices that are likely to correspond to each other between meshes are set as feature points using the distance from the centroid to the vertices. After rotating mesh B so that the feature points of A and B to be close each other, RMSD (root mean square deviation) is measured for the vertices of A and B. Aligned meshes are obtained by repeating the same process while changing the feature points until the RMSD is less than the reference value. Through experiments, we show that the proposed algorithm aligns the mesh even when the ICP and Go-ICP algorithms fail.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.371-378
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• 1996

An RF inductively coupled plasma (ICP) torch has been developed as a typical thermal plasma generator and reactor. It has been applied to various materials processings such as plasma flash evaporation, thermal plasma CVD, plasma spraying, and plasma waste disposal. The RF ICP reactor has been generally operated under one atmospheric pressure. Lately the characteristics of low pressure RF ICP is attracting a great deal of attention in the field of plasma application. In our researches of RF plasma applications, low pressure RF ICP is mainly used. In many cases, the plasma generated by the ICP torch under low pressure seems to be rather capacitive, but high density ICP can be easily generated by our RF plasma torch with 3 turns coil and a suitable maching circuiit, using 13.56 MHz RF generator. Plasma surface modification (surface hardening by plasma nitriding and plasma carbo-nitriding), plasma synthesis of AIN, and plasma CVD of BN, B-C-N compound and diamond were practiced by using low pressure RF plasma, and the effects of negative and positive bias voltage impression to the substrate on surface modification and CVD were investigated in details. Only a part of the interesting results obtained is reported in this paper.