• 전력전자학회논문지
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• 제15권4호
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• pp.274-281
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• 2010

본 논문에서는 반도체 플라즈마 식각 시스템의 균일도 향상을 위한 CCP와 ICP 결합 임피던스정합 장치를 제안한다. 이중주파수 전원공급 장치는 CCP와 ICP로 구성되어 있고 첫 번째 구성은 고집적화를 위해 페라이트 코어를 사용한 유도 결합 플라즈마(ICP : Inductively Coupled Plasma)방식이며, 두 번째 구성은 셀 전체의 균일도 향상을 위한 용량 결합 플라즈마(CCP : Capacitively Coupled Plasma)방식이다. 제안된 시스템은 반도체 장비 산업에서 요구되는 높은 생산성을 실현할 수 있다. 본 논문에서는 제안된 시스템의 타당성을 검증하기 위해 CCP와 ICP 결합 임피던스정합 장치를 제작하였고, 이론적 분석과 27.12MHz 와 400kHz의 조건에서 시뮬레이션 및 실험을 진행하였다

• 한국표면공학회지
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• 제44권1호
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• pp.26-31
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• 2011

Numerical modeling is used to investigate the perturbation of a single Langmuir probe (0.2 mm diameter shielded with 6 mm insulator) inserted along the center axis of a cylindrical inductively coupled plasma chamber filled with Ar at 10 mTorr and driven by 13 MHz. The probe was driven by a sine wave. When the probe tip is close to a substrate by 24.5 mm, the probe characteristics was unperturbed. At 10 mm above the substrate, the time averaged electric potential distribution around the tip was severly distorted making a normal probe analysis impossible.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.302-305
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• 2000

It is important to control the electron energy distribution to have high quality plasma process. A conventional inductively coupled plasma(ICP) source with 13.56MHz power is not adequate for low damage sub-half micron patterning process due to higher electron temperature. Only the pulsed plasma technique seems to provide low electron temperature, and thus low process damage. Recently, a novel method proposed by us, named as ‘Enhanced-ICP’, which uses periodic weak axial magnetic field added to a normal ICP source, has shown great improvement in etch characteristics. changes of plasma characteristics according to the frequency of time-varying axial magnetic field have been observed by probe-time-averaged Langmuir probe.

• 한국표면공학회지
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• 제53권2호
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• pp.67-71
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• 2020

For deposition technology using plasma, it plays an important role in improving film deposited with high ionization rate through high density plasma. Various deposition methods such as high-power impulse magnetron sputtering and ion-beam sputtering have been developed for physical vapor deposition technology and are still being studied. In this study, it is intended to control plasma using inductive coupled plasma (ICP) antennas and use properties to improve the properties of Hafnium nitride (HfN) films using ICP assisted magnetron sputtering (ICPMS). HfN film deposited using ICPMS showed a finer grain sizes, denser microstructure and better mechanical properties as ICP power increases. The best mechanical properties such as nanoindentation hardness of 47 GPa and Young's modulus of 401 GPa was obtained from HfN film deposited using ICPMS at ICP power of 200 W.

• 센서학회지
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• 제31권4호
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• pp.214-217
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• 2022

The effect of inductively coupled plasma (ICP) treatment with O₂ gas on the surface properties of poly(ether sulfone) (PES) was investigated. X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical characteristics of the O₂ plasma-treated PES films. The surface roughness of the pristine and O₂ plasma-treated PES films for different RF powers of the ICP was determined using an atomic force microscope (AFM). The contact angles of the PES films were also measured, using which the surface free energies were calculated. The O1s XPS spectra of the PES films revealed that the number of polar functional groups increased following the O₂ plasma treatment. The AFM analysis showed the average surface roughness increased from 1.01 to 4.48 nm as the RF power of the ICP was increased. The contact angle measurements revealed that the PES films became more hydrophilic as the RF power of the ICP was increased. The total surface energy increased with the RF power of the ICP, resulting from the increased polar energy component.

• 반도체디스플레이기술학회지
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• 제10권2호
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• pp.83-89
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• 2011

In this study, we investigated the effects of shutter control by Reactive Magnetron Sputtering using Inductively-Coupled Plasma(ICP) for obtaining ZnO thin films with high purity. The surface morphologies and structure of deposited ZnO thin films were characterized using Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and X-ray Diffractometer (XRD). Also, optical and chemical properties of ZnO thin films were analyzed by Spectroscopic Ellipsometer (SE) and X-ray Photoelectron spectroscopy (XPS). As a result, it observed that ZnO thin films grown at reactive sputtering using shutter control and ICP were higher density, lower surface roughness, better crystallinity than other conventional sputtering deposition methods. For obtaining better quality deposition ZnO thin films, we will investigate the effects of substrate temperature and RF power on shutter control by a reactive magnetron sputtering using inductively-coupled plasma.

• 약학회지
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• 제36권3호
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• pp.199-204
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• 1992

The trace elements in animal feed were analyzed by Inductively Coupled Plasma Mass Spectrometer (ICP-MS, VG-PlasmaQuad Co.) to find possible sources of heavy metals accumulation in rat organ. The study about spectral interference was performed by analysis of a background spectrum of ICP-MS. Recovery test using standard of Cd and Se (100 ppb) was found to be better than 90%. Twenty elements (Ca, Fe, Mg, Ti, Cr, Ni, Cu, Zn, Ba, Al, Mn, Pb, B, Ce, Bi, U, V, Cd, and W)are determined.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.41-45
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• 2005

In this paper, parameters of electron temperature and density for the mercury-free lighting-source were measured to diagnosis and analyze in Xe based inductively coupled plasma(ICP). In results at several dependences of 20~100 mTorr Xenon pressure, 50~200W RF power and horizontal distribution were especially mentioned. When Xe pressure was 20mTorr and RF power was 200W, the electron temperature and density were respectively 3.58eV and $3.56{\times}10^{12}cm^{-3}$. The key parameters of Xe based ICP depended on Xe pressure more than RF power that could be verified. A high electron temperature and low electron density with a suitable Xe pressure are indispensible parameters for Xe based ICP lighting-source.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.43-47
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• 2006

In this paper, parameters of electron temperature and density for the mercury-free lighting-source were measured to diagnosis and analyze in Xe based inductively coupled plasma (ICP). As results at several dependences of 20~100mTorr Xenon pressure, the brightness of discharge tube was higher (4,900 $cd/m^2$) than other conditions when Xe pressure was 20mTorr and RF power was 200W. In that case, the electron temperature and density were 3.58eV and $3.56{\times}10^{12}cm^2$, respectively. The key parameters of Xe based ICP depended on Xe pressure more than RF power that could be verified. A high electron temperature and low electron density with a suitable Xe pressure are indispensible parameters for Xe based ICP lighting-source.

• 한국작물학회지
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• 제49권spc1호
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• pp.269-276
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• 2004