• Journal of Power Electronics
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• v.17 no.5
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• pp.1372-1381
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• 2017

This paper presents a high-side switch driver IC capable of improving the current sensing accuracy and providing reverse battery protection. Power semiconductor switches used to replace relay switches are encumbered by two disadvantages: they are prone to current sensing errors and they require additional external protection circuits for reverse battery protection. The proposed IC integrates a gate driver and current sensing blocks, thus compensating for these two disadvantages with a single IC. A p-sub-based 90-V $0.13-{\mu}m$ bipolar-CMOS-DMOS (BCD) process is used for the design and fabrication of the proposed IC. The current sensing accuracy (error ${\leq}{\pm}5%$ in the range of 0.1 A-6.5 A) and the reverse battery protection features of the proposed IC were experimentally tested and verified.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.85-88
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• 2001

This paper suggests an improved switch architecture for the rechargeable battery protection IC. In the existing protection IC, charging and discharging switches composed of the CMOS transistor and the diode are external components. It is difficult to integrate the switches in a CMOS process due to the large chip-size overhead and inevitable parasitic effects. In this paper, we propose a new switch architecture of the MOSFET's 'diode connection' method. The performance and chip-size overhead are proved to be adequate for the fully integrated protection IC.

• Journal of IKEEE
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• v.7 no.2 s.13
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• pp.172-180
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• 2003

Based on simulation results and accompanying analysis, we suggest a thyristor-type ESD protection device structure suitable for implementation in standard CMOS processes to reduce the parasitic capacitances added to the input nodes, which is very important in CMOS RF ICs. We compare DC breakdown characteristics of the suggested device to those of a conventional NMOS protection device to show the benefits of using the suggested device for ESD protection. The characteristic improvements are demonstrated and the corresponding mechanisms are explained based on simulations. Structure dependencies are also examined to define the optimal structure. AC simulation results are introduced to estimate the magnitude of reduction in the added parasitic capacitance when using the suggested device for ESD protection. The analysis shows a possibility of reducing the added parasitic capacitance down to about 1/40 of that resulting with a conventional NMOS protection transistor, while maintaining robustness against ESD.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.4
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• pp.445-453
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• 2015

A fully integrated cost-effective and low-power single chip Lithium-Ion (Li-Ion) battery protection IC (BPIC) for portable devices is presented. The control unit of the battery protection system and the MOSFET switches are integrated in a single package to protect the battery from over-charge, over-discharge, and over-current. The proposed BPIC enters into low-power standby mode when the battery becomes over-discharged. A new auto release function (ARF) is adopted to release the BPIC from standby mode and safely return it to normal operation mode. A new delay shorten mode (DSM) is also proposed to reduce the test time without increasing pin counts. The BPIC implemented in a $0.18-{\mu}m$ CMOS process occupies an area of $750{\mu}m{\times}610{\mu}m$. With DSM enabled, the measured test time is dramatically reduced from 56.82 s to 0.15 s. The BPIC chip consumes $3{\mu}A$ under normal operating conditions and $0.45{\mu}A$ under standby mode.

• Proceedings of the IEEK Conference
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• 2000.09a
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• pp.911-914
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• 2000

본 논문에서는 배터리가 없는 ASK 전송방식의 RFID(Radio Frequency IDentification) Transponder 칩 설계에 관한 내용을 다룬다. Transponder IC는 power-generation 회로, clock-generation 회로, digital block, modulator, overoltge protection 회로로 구성된다. 설계된 칩은 저전력 회로를 적용하여 원거리 transponder칩을 구현할 수 있도록 하였다. 설계된 회로는 0.25㎛ 표준 CMOS 공정으로 레이아웃하여 제작하였다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.10
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• pp.1-7
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• 2020

In recent years, as LED display systems are actively spread, study on effective control methods for an LED driver for driving the systems has been in progress. The most representative among them is the uniform brightness control method for the LED driver channel. In this paper, we propose an LED driver IC for BLU with current compensation and system protection functions to minimize channel luminance deviation. It is designed for current accuracy within ±3% between channels and a channel current of 150 mA. In order to satisfy the design specifications, the channel amplifier offset was canceled out by a chopping operation using a channel-driving PWM signal. Also, a pre-charge function was implemented to minimize the fast operation speed and luminance deviation between channels. LED error (open, short), switch TR short detection, and operating temperature protection circuits were designed to protect the IC and BLU systems. The proposed IC was fabricated using a Magnachip 0.35-um CMOS process and verified using Cadence and Synopsys' Design Tool. The fabricated LED driver IC has current accuracy within ±1.5% between channels and 150-mA channel output characteristics. The error detection circuits were verified by a test board.

• Journal of IKEEE
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• v.25 no.4
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• pp.735-740
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• 2021

In this paper, we propose a new ESD protection device with high holding voltage with low current gain of parasitic NPN BJT by improving the structure of the existing LTDDSCR. The electrical characteristics of the proposed protection device were analyzed by HBM simulation using Synopsys' TCAD simulation, and the operation of the added BJT was confirmed by current flow, impact ionization and recombination simulation. In addition, the holding voltage characteristics were optimized with the design variables D1 and D2. As a result of the simulation, it was verified that the new ESD protection device has a higher holding voltage compared to the existing LTDDSCR and has a symmetrical bidirectional characteristic. Therefore, the proposed ESD protection device has high area efficiency when applied to an IC and is expected to improve the reliability of the IC.

• Journal of the Korean Electrochemical Society
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• v.4 no.3
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• pp.132-137
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• 2001

Recently, the demand for notebook PC with lithium ion batteries has steadily increased and consumers require them to adopt a SBP(smart battery pack) able to predict the remaining capacity and the run time of batteries precisely. The SBP is composed of a protection If, by which safety of lithium ion batteries is maintained against overcharge, overdischarge and overcurrent, and a smart IC, which calculates the remaining capacity and the remaining run time. The protection IC shut abmormal current down by using overcharge/overdischarge FET. A SBS(smart battery system) is composed of a system host, a smart battery and a smart battery charger. The smart ICs for SBP will be required to provide a low cost, low current consumption and small size. There will need to develop a microcomputer control type IC and an optimum algorism which is able to predict the residual capacity and the residual run time precisely. SBS will apply to many kinds of industry fields such as an electric bicycle, an electric vehicle, a load levelling and a military.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1217-1220
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• 2003

A low-power design technique for lithium-ion Battery-Protection Integrated Circuit (BPIC) for multi cell configuration is proposed. The hardware sharing scheme with more precisely divided operating states in the detection range could reduce the power consumption significantly, especially during the normal state. The usefulness of the proposed scheme was confirmed through HSPICE simulations.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.3
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• pp.96-102
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• 2009

This paper deals with gate drive and power IC for high power devices(600V/200A and 1200V/150A). The proposed gate driver provides high gate driving capability (4 A source, 8 A sink), and over-current protected by means of power transistor desaturation detection. In addition, soft-shutdown function is added to reduce voltage overshoots due to parasitic inductance. This gate drive If is designed, fabricated, and tested using the Dongbu hitek 0.35um BCDMOS process.