• Proceedings of the IEEK Conference
• /
• 1999.06a
• /
• pp.837-840
• /
• 1999

In this paper, we design and verify the hardware circuit that performs PLCP(Physical Layer Convergence Protocol) protocol functions of physical layer in IEEE 802.11 frequency hopping WLAN(Wireless Local Area Network). Altera MAX＋PLUS I $I^{〔1〕}$ is used as a design tool. The designed circuit consists of control register module to interface with upper layer, FIFO module to transmit/receive data with upper layer, TX function module, and RX function module. It is verified that the developed circuit conforms well to the IEEE 802.11 standard specification and can support both 1Mbps and 2 Mbps transmission rate by simulation. The developed circuits can be utilized for the implementation of protocol processor in wireless LAN areas.

• Solar Energy
• /
• v.8 no.1
• /
• pp.68-73
• /
• 1988

In the glass/TCO/p-i-n a-Si/Al type of amorphous silicon solar cell, the effects on solar cell efficiency and metastability for the various kinds of TCO analyzed by SAM and ESCA, which was used to measure the diffusion profiles of In and Sn and the Fermi energy shifts in the TCO/p interface respectively. Indium which diffused into a-Si p-layer did not have any significant effects on the Fermi level shift of p-layer when the content of $B_2H_6/SiH_4$ in p-layer was at 1 gas%. The cell fabricated on $SnO_2$ turned out to have the best cell photovoltaic characteristics. ITO fabricated by electron beam deposition system, which was shown to have the greatest rate of diffusion of Indium in ITO/p interface produced the worst metastability among the cells tested.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.24 no.7
• /
• pp.945-956
• /
• 2000

The axisymmetric bodies considered in this study have hemispherical and ellipsoidal noses. The near-field pressure fluctuations over each nose model at $Re_D=2.43{\times}10^5$ were investigated in the laminar separation region and developing turbulent boundary layers using a 1/8' pin-holed microphone sensor. The wall pressure fluctuations were also measured in an axisymmetric boundary layer on a cylinder parallel to mean flow at a momentum thickness Reynolds number of 850 and a boundary layer thickness to cylinder radius ratio of 1.88.

• Journal of the Semiconductor & Display Technology
• /
• v.10 no.2
• /
• pp.57-63
• /
• 2011

Photovoltaic effect is confirmed in DSSC fabricated under the common conditions. In upper electrodes, validity of ZnO as new TCO material was investigated and an improvement of characteristics in DSSC was tried by control of process conditions at semiconductive powder layer. ZnO thin film showed very high resistivity, therefore efficiency of solar cell was lower than that of conventional ITO-related material. DSSC characteristics was able to improve by thin blocking layer doposited between the TCO and semiconductor layer.

• Proceedings of the KIEE Conference
• /
• 1994.11a
• /
• pp.234-236
• /
• 1994

We fabricated Au/PI/Pb and Au/PI/1-layer Arachidic acid/Pb structures in order to electron transport properties through the junctions. It was found that 9-layer PI LB films function as a good tunneling barrier from the I-V properties. And several peaks originating in the vibrational modes of the constituent molecules of 1-layer arachidicacid LB films were clearly observed in $d^2V/dI^2-V$ curves.

• The Journal of the Korean Society for Microbiology
• /
• v.8 no.1
• /
• pp.33-36
• /
• 1973

This study was carried out for the classification of mycobacteria using the thin-layer chromatography of mycobacterial lipids. Results as follows: Of the 12 strains of mycobacteria, the two spots on chromatogarphy were three strains of mycobacteria(BCG, M. tuberculosis($H_{37}J$) and M. ulcerans) and three spots on chromatography were two strains of mycobacteria(M. kansasii and M. balnei). The method of thin-layer chromatography of mycobacterial lipids was considered to capable for the use of classification of mycobacteria.

• Korean Journal of Veterinary Research
• /
• v.39 no.5
• /
• pp.1006-1012
• /
• 1999

This study was conducted to evaluate the ELISA kit for measuring the level of cortisol in the urine. The CV of within-run variation and day to day variation were 0.4~2.8 and 1.8~5.7, respectively. The minimum limitation of measurement was 1ng/ml. The cross reaction was high ($CR_{50}(%)=11.4{\sim}43.2$) in prednisolone, 11-deoxycortisol, 21-deoxycortisol and predinosone. There was low and no cross reaction in other steroid. To develop the ELISA kit we measured the cortisol level in diluted urine with PBS (procedure I), extracted urine with methylene chloride (procedure II) and extracted methylene chloride-extracted urine from thin-layer chromatography (procedure III). The CV value of procedure I, II, III was 9.4~28.3%, 7.2~8.9% and 2.5~5.7%, respectively. There was significant difference between procedure I with II, and pro-cedure I with III(p < 0.01), but no difference between procedure II with III significantly(p < 0.01). The mean UCCR of urine collected through am 8 to 10 was $9.5{\pm}7.6$(0.14~28.0) in 12-month-old dog(n = 47). In this study we can measure the cortisol level in extracted urine with methylene chloride and sequential thin-layer chromatography accurately using ELISA kit.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.12
• /
• pp.545-552
• /
• 2003

When a Si PIN diode is exposed to fast neutrons, it results in displacement damage to the Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed. Several PIN diode arrays with various thickness and cross-section area of the intrinsic layer(I layer) were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have a good linearity to neutron dose and show that the increase of thickness of I layer and the decrease of cross-section of PIN diodes improve the sensitivity. Newly developed PIN diodes with thicker I layer and various cross section, were retested and then showed the best neutron sensitivity at the condition that the I layer thickness was similar to a side length. On the basis of two test results, final discrete PIN diodes with a rectangular shape were manufactured and the characteristics as neutron detectors were analyzed through the neutron beam test using on-line electronic dosimetry system. Developed PIN diode shows a good linearity as dosimetry in the range of 0 to 1,000cGy(Tissue) and its neutron sensitivity is 13mV/cGy at constant current of 5mA, that is three times higher than that of commercially available neutron detectors. And the device shows little dependency on the orientation of the neutron beam and a considerable stability in annealing test for a long period.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.257-257
• /
• 2010

One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio ($I_{on}/I_{off}$), leakage current, threshold voltage, and hysteresis, under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stabilities of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers were investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic layer deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to $10^5$ times with 5mm bending radius. In the most of the devices after $10^5$ times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the $I_{on}/I_{off}$ and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.

• 한국해양학회지
• /
• v.18 no.2
• /
• pp.104-110
• /
• 1983

The Intermittent phenomena of the turbulent momentrm transports were closely examined in order to know the nature of intermittency and its fluid dynamic implications in the oceanic turbulent boundary layer. Also the connection between the observed intermittency and the bursting phenomenon was studied in detail. In this investigation, strong intermittency of turbulent momentum transports were found and the peak values of Reynolds stress (i,e., u'w') was about 408 times greater than average Reynolds stress (u',w') in the mid-layer and 270 times greater in the uppcrlayer of the turbulent boundary layer. These values are far greater than presently known maximum value, namely 30 times greater than the average Reynolds stress reported by Gordon (1974) and Heathersaw (1974). The distribution of Reynolds stress were extremely non-normal with the mean peak occurrence period of 5 minutes in the mid-layer and 1. 1 minutes in the upper layer of the turbulent boundary layer. Each teak lasted about 2 seconds in the mid-layer and 1.1 seconds in the upper layer of the turbulent boundary layer. Our dimensionless period of peak occurrence are found to be 33.3 in the mid-layer and 7.3 in the upper-layer, which are substantially larger than the often quoted values of 3.2-6.8 for the bursting period (Jackson, 1976). Some workers have interpreted that the intermittency phenomenon is the retlect of burst across their probe of the currentmeter (Gordon, 1974; Heathersaw, 1974). However, it was known that the burst can be found very near bottom boundary with smoothed bottom (i,e., friction Reynolds number$\leq$3,000) in the laboratory experiments. Through this investigation, it was found that the intermittent strength of the turbulent momentum transports does not conclusively indicate the characteristic feature of the boundary layer turbulence with a rough bottom (i,e., friction Reynolds number$\geq$10$\^$5/).