• E2M - 전기 전자와 첨단 소재
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• 제9권10호
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• pp.1013-1018
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• 1996

The annealing effects of Au/Te/Au/n-GaAs structure was investigated by using x-ray diffraction, scanning electron microscope, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the intensity of Au-Ga peak by X-ray diffraction was increased. The Ga$\_$2/Te$\_$3/peak got evident for the samples annealed at 400.deg. C and GaAs peak by recrystallization appeared for the samples annealed at 500.deg. C. The variation from the schottky to low resistance contact was confirmed by I-V curve. The lowest value of the specific contact resistance of the samples annealed at 500.deg. C was 3.8*10$\^$-5/.ohm.-cm$\^$2/ but the value increased above 600.deg. C.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 춘계학술대회 논문집
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• pp.899-900
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• 2009

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2003년도 춘계학술발표회 초록집
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• pp.53-53
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and metal substrates using thiophene and ethylcyclohexane precursors by PECVD method. In order to compare electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30~100 W. AFM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants, respectively. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the thiophene films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C- V data measured at 1MHz. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current of thiophene thin films were obtained to be about 3.22 and $1{\;}{\times}10^{-11}{\;}A/cm^2$. However, in case of ethylcyclohexane thin films, the minimum dielectric constant and the best leakage current were obtained to be about 3.11 and $5{\;}{\times}10^{-12}{\;}A/cm^2$.

• 대한전자공학회논문지
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• 제26권6호
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• pp.38-47
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• 1989

헴트(HEMT) 소자의 순수 해석적 DC모델이 2차원 전하제어 시뮬레이션 결과[4]에 기초하여 제작되었다. 이 모델에서는 2-DEG 채널의 전자 운송 역학에 확산 효과를 추가하였다. 이 확산효과는 기존 1차원 DC모델에서 사용하는 전자 이동도 및 문턱전압을 증가시키는 효과를 가졌음을 보였다. 또한 2-DEG 농도분포함수를 piecewise 선형화하여 HEMT 소자의 subthreshold 특성의 해석적 모델을 추가하였고, 따라서 2-DEG의 채널 두께 및 게이트 용량을 게이트 전압의 함수로 나타내었다. I-V curve의 전류포화영역에서의 기울기를 모델하는데는 gate 밑의 전자포화채널 지역에서의 전자채널두께와 채널길이 변조현상을 함께 고려하였다. Troffimenkoff형의 전장의존 전자이동도를 사용하여 I-V곡선의 포화현상을 모델하였다. 또한 기존 1차원 모델에서 감안되지 않은 2차원 효과가 실제 전류특성곡선에서 매우 중요한 역할을 하며, 이 효과가 효과적으로 1개의 보정상수f로 보상됨을 보였고, 물리적으로 이 상수가 채널 GCA 지역과 채널포화지역 사이에 형성되는 채널천이지역의 전자농도와 관계됨을 보였다.

• 한국초전도ㆍ저온공학회논문지
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• 제14권2호
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• pp.20-23
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• 2012

With continuous development of the 2nd generation HTS conductor, the critical current of the conductor is also increasing. However, many applications require more than 2 conductors in parallel to transport large current. Applications such as HTS power cables and some HTS current leads usually need much larger transport current than that provided by a single conductor and they require more than several tens of HTS conductors. In the case of parallel connection of multiple HTS conductors, the current distribution depends on the contact resistance of each conductor at the terminals for DC operation. The non-uniform distribution of the terminal resistances results in a non-uniform distribution of the current. The resultant current non-uniformity affects on the measurement of the I-V curve and the thermal performance of the multiple conductors. This paper describes the I-V curves obtained from multiply connected HTS conductors with different terminal contact resistances to investigate the relationship between the distorted I-V curve and heat generation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.410-411
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• 2007

To investigate the ZnO LED which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Analysis of ZnO LED V-I curve will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

• 한국안광학회지
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• 제4권2호
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• pp.141-146
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• 1999

단결정 $LaAlO_3$의 열자극발광을 온도, 파장, 발광강도의 3차원 데이터로 측정하였고, 이를 분석하였다. $LaAlO_3$는 YBCO(초전도체) 또는 각종 반도체의 성장기판으로 많이 활용되고 있다. 온도, 파장, 발광강도의 3차원 데이터를 얻으므로써 활성화 에너지 뿐만 아니라, 기존의 온도대 발광곡선(glow curve) 분석에서 그 정보를 알기 힘들었던, 재결합준위(recombination center)의 에너지를 결정할 수 있었다. 이는 특정 피크온도에서의 파장대 발광강도 데이터를 Franck-Condon 모델을 이용하여 곡선 춤법으로 분석하여 얻을 수 있다. 온도대 발광강도곡선(glow curve)을 수치해석에 의한 곡선맞춤법으로 분석한 결과 세 개의 발광곡선이 중첩되어 있음을 알게되었으며, 각각에 대한 활성화 에너지는 0.54eV, 0.91eV, 1.02eV 였다. 재결합준위의 에너지는 2.04eV, 2.75eV 였다.

• 전기의세계
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• 제26권5호
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• pp.83-89
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• 1977

This paper described the minority carrier lifetime in Si epitaxial layer, and also the voltage (V) versus current (I) characteristics of high resistivity Si epitaxial layer0substrate junction. The measured lifetime in Si epi-layer was much shorter than in bulk, and the temperature dependence of lifetime was found to agree well with Shockley-Read model of recombination which applies to high resistivity n-type materials. The V-I curve showed; an ohmic region (I.var.V), a sublinear region (I.var.V$^{1}$2/), a space charge limited current region (I.var.V$^{2}$), and finally a negative resistance region. We investigated these phenomena by the theory of the relaxation semiconductor.

• 조명전기설비학회논문지
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• 제23권1호
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• pp.59-68
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• 2009

분산진원으로서 연료전지 발전장치는 100w부터 수백[kw]의 용량을 가지며 종전의 대규모 전력설비와 비교하여 높은 신뢰도를 갖는 고품질의 전력을 공급할 수 있다. 본 연구에서는 소형 분산전원으로서 PEMFC(polymer electrolyte membrane fuel cell)연료전지 발전장치에 대한 PSIM(power electronics simulation tool) 모델을 설정하고 이를 바탕으로 DSP(digital signal processor)기반의 연료전지 하드웨어 시뮬레이터를 구현하였다. 연료전지 전류와 출력전압과의 관계는 연료전지의 전압-전류(V-I) 곡선 중 ohmic영역에서 1차 함수로 간략화 하였다. 구현된 시스템은 PEMFC 하드웨어 시뮬레이터, 절연형 풀 브리지 직류 부스트 컨버터 그리고 60[Hz] PWM인버터로 구성되어있다. 부하변동 및 과도상태에 대한 연료전지 하드웨어 시뮬레이터의 전압-전류-전력(V-I-P) 특성을 파악하였으며, 저항 부하 및 비선형 부하에 대한 전력변환기의 60[Hz] 정현파 교류출력 전압파형을 고찰하였다.

• 한국태양에너지학회 논문집
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• 제37권4호
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• pp.23-33
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• 2017

A great deal of study for loss reduction of photovoltaic system is conducted currently. It is hard to distinct the fault of photovoltaic system with the naked eye. For that reason, it is essential to repair and maintain the PV system by monitoring the system. The fault of individual modules can cause the huge loss of the entire system because of the mismatch. Therefore, the method of diagnosing the PV array is necessary by measuring the multi-channel arrays simultaneously. In this paper, it is presented the method of measuring I-V curve of multi-channel arrays simultaneously by using the charge and discharge characteristics of capacitor. Generated DC power at PV arrays is charged and discharged at the capacitors in a moment. By measuring the charged voltage and current, it is possible to diagnose of performance of PV arrays.