• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.218-219
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• 2007

Silicon feed stock shortage have acted as major restraints for growth of photovoltaic industry. Concentrating photovoltaic (CPV) system will reduce the use of silicon PV materials. This paper presents the application possibility of mono-crystalline silicon solar cell, which has increased in market share, for PV concentrator. We measured the power of solar cell using sun simulator and I-V curve tracer and compared the results. The comparison of results showed that the concentrated solar cell generated the power more approximately 7 times than without concentration in spite of non-heat sink. If CPV technology included heat sink combines already developed PV tracking system, it will have a merit economically.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.22-23
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• 2007

We tried to find the possibility of mono-crystalline silicon solar cell for photovoltaic concentrating system which is major cost portion for PV system using fresnel lens. With solar simulator and I-V curve tracer, we analyzed maximum output characteristics and measured the temperature of concentrated area using infrared camera. Because of temperature increase, there was no merit when concentrating. But at low radiant power, it showed more efficient operation. The combination of heat-sink technology and tracking system to our concentrating PV system would give better performance results.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1271-1273
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• 1993

$SiO_2$ and SiON films are formed by Laser CVD for inter-level dielectrics in submicron VLSI. This technique is noticeable that film formation can be done at low temperatures, below $300^{\circ}C$ with less damage. An ArF Excimer Laser with wave length of 193nm is used to excite and dissociate reactant gases. After film formation growth rate, refractive index, I-V curve, and step coverage characteristics of the films were evaluated.

• Progress in Superconductivity and Cryogenics
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• v.12 no.2
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• pp.1-4
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• 2010

Normal zone propagation (NZP) within jointed YBCO coated conductors (CC) was analyzed experimentally. The joint between CC tapes were conducted by lap joint method and the characteristics of the jointed CC tapes measured from V-I curve. NZP was induced by thermal heaters attached to two points of the jointed CC tapes; the voltages across the jointed CC tapes were measured and recorded. NZP induced by each heater point is compared in point of protection of CC tapes and magnet. This study about NZP of the jointed tapes may be useful to make a magnet system with several coils using YBCO CC.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.189-192
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• 2000

We fabricated rapid single-flux-quantum RS flip-flop circuits with and without Y$_1$Ba$_2$Cu$_3$O$_{7-{\delta}}$(YBCO) ground plane. The circuit consists of SNS-type ramp-edge Josephson junctions that have cobalt-doped YBCO and Sr$_2$AITaO$_6$(SAT) for barrier layer and insulator layer, respectively. The fabricated Josephson junction showed a typical RSJ-like current-voltage(I-V) characteristics above 50K. We sucessfuly demonstrated RS flip-flop at temperatures around 50K. The RS flip-flop fabricated on ground plane showed more definite set and reset state in voltage-flux(V-${\phi}$) modulation curve for read SQUID, which may be attributed to a shielding effect of the YBCO ground plane.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.419-424
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• 2009

ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

• Journal of the Korean institute of surface engineering
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• v.28 no.3
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• pp.182-191
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• 1995

A highly porous silicon layer was fabricated by anodizing single crystalline silicon in a dilute solution of hydrofluoric acid. The color of the porous silicon changed from red and blue to yellow gold during the anodizing process. The current-voltage (I-V) curve of the anodizing process showed a typical Schottky diode rectification form. The cell voltage decreased with the increase of HF concentration in the solution at high current range. However, the voltage was independent on HF concentration in the solution at low current range. The pore size was dependant on anodizing condition (HF concentration, current and anodizing time). The pore size and wall width of porous silicon layer were 4~6 and 1~3 nm, respectively. Surface of the porous silicon was covered with silicon compound ($SiH_x$etc.) according to IR spectrum analysis. The peak wavelength and width of photoluminescence (PL) spectrum of porous silicon were 650~850 nm (1.5~1.9 eV) and 250 nm, respectively. The photoluminescence intensity and peak wavelength, and porosity of porous silicon increased with increasing anodizing current and decreased with increasing HF concentration in the anodizing solution.

• Applied Chemistry for Engineering
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• v.22 no.2
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• pp.190-195
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• 2011

To investigate the photon-trapping effect and scattering layer effect of $TiO_2$ multi-layer in dye-sensitized solar cell (DSSC) and the degree of recombination of electrons at the electrode treated $TiCl_4$, we formed electrodes of different conditions and obtained the most optimal electrode conditions. To estimate characteristics of the cell, IV curve, UV-Vis spectrophotometer, electrochemical impedance spectroscopy (EIS) and incident photon-to-current conversion efficiency (IPCE) were measured. As a result, we confirmed that the multi-layer's efficiency was higher than that of monolayer in the IV curve and the performance of $TiCl_4$ treated electrode was increased according to decreasing the impedance of EIS. Among several conditions, the efficiency of the cell with scattering layer is higher than that of a layer with the base electrode about 19%. Because the light scattering layer enhances the efficiency of the transmission wavelength and has long electron transfer path. Therefore, the value of the short circuit current increases approximately 10% and IPCE in the maximum peak also increases about 12%.

• Journal of Electrochemical Science and Technology
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• v.15 no.2
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• pp.253-260
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• 2024

Proton exchange membrane water electrolysis (PEMWE) is an efficient method for utilizing renewable energy sources such as wind and solar powers to produce green hydrogen. For PEMWE powered by renewable energy sources, its durability is a crucial factor in its performance since irregular and fluctuating characteristics of renewable energy sources, especially for wind power, can deteriorate the stability of PEMWE. Triangular voltage cycle is well able to simulate fluctuating wind power, but its effect on the durability has not been investigated extensively. In this study, the performance degradation of the PEMWE cell operated with the triangular voltage cycling was investigated at different ramping rates. The measured current responses during the cycling gradually decreased for both ramping rates, and I-V curve measurements before and after the cycling confirmed the degradation of the performances of PEMWE. For both measurements, the degradation rate was larger for 300 mV s^-1 than 30 mV s^-1, and they were determined as 0.36 and 1.26 mV h^-1 (at the current density of 2 A cm^-2) at the ramping rates of 30 and 300 mV s^-1, respectively. The comparison with other studies on triangular voltage cycling also indicate that an increase in the ramping rate accelerates the deterioration of the PEMWE performance. X-ray photoelectron spectroscopy and transmission electron microscopy results showed that the Ir catalyst was oxidized and did not dissolve during the voltage cycling. This study suggests that the ramping rate of the triangular voltage cycling is an important factor for the evaluation of the durability of PEMWE cells.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.56-63
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• 1994

The effects of sulfur treatments on the barrier heithts of Schottky contacts and the interface-state density of metal-insulator-semiconductor (MIS) capacitors on InP have been investigated. Schottky contacts were formed by the evaporation of Al, Au, and Pt on n-InP substrate before and after (NH$_{4}$)$_{2}$S$_{x}$ treatments, respectively. The barrier height of InP Schottky contacts was measured by their current-voltage (I-V) and capacitance-voltage (C_V) characteristics. We observed that the barrier heights of Schottky contacks on bare InP were 0.35~0.45 eV nearly independent of the metal work function, which is known to be due to the surface Fermi level pinning. In the case of sulfur-treated Au/InP ar Pt/InP Schottky diodes, However, the barrier heights were not only increased above 0.7 eV but also highly dependent on the metal work function. We have also investigated effects of (NH$_{4}$)$_{2}$S$_{x}$ treatments on the distribution of interface states in Si$_{3}$N$_{4}$InP MIS diodes where Si$_{3}$N$_{4}$ was provided by plasma enhanced chemical vapor deposition (PECVD). The typical value of interface-state density extracted feom 1 MHz C-V curve of sulfur-treated SiN$_{x}$/InP MIS diodes was found to be the order of 5${\times}10^{10}cm^{2}eV^{1}$. This value is much lower than that of MiS diodes made on bare InP surface. It is certain, therefore, that the (NH$_{4}$)$_{2}$S$_{x}$ treatment is a very powerful tool to enhance the barrier heights of Au/n-InP and Pt/n-InP Schottky contacts and to reduce the density of interface states in SiN$_{x}$/InP MIS diode.