• Asian-Australasian Journal of Animal Sciences
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• v.27 no.1
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• pp.131-139
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• 2014

This study was performed to determine the effect of dietary supplementation of procyanidin on growth performance, blood characteristics, and immune function in growing pigs. In experiment 1 (Exp. 1), thirty-two crossbred pigs with an initial BW of $19.2{\pm}0.3$ kg were allocated into 4 treatments for an 8-wk experiment: i) CON (basal diet), ii) MOS 0.1 (basal diet+0.1% mannanoligosaccharide), iii) Pro-1 (basal diet+0.01% procyanidin), and iv) Pro-2 (basal diet+0.02% procyanidin). Pigs fed Pro-1 and Pro-2 diets had greater (p<0.05) gain:feed ratio compared with those fed CON or MOS 0.1 diets. Serum creatinine concentration was less (p<0.05) in Pro-2 treatment than those in CON, MOS 0.1 and Pro-1 treatments. In Exp. 2, twelve pigs (BW $13.4{\pm}1.3$ kg) received basal diet with i) 0 (CON), ii) 0.02% (Pro-0.02%), and iii) 0.04% procyanidin (Pro-0.04%) for 4 wk. Concentration of platelets was lower (p<0.05) in the Pro-0.04% group compared to CON at 24 h after lipopolysaccharide (LPS) challenge. In addition, secretion of cytokines from cultured peripheral blood mononuclear cells (PBMC) in the presence or absence of procyanidin was examined. The levels of interleukin (IL)-$1{\beta}$, IL-6 and tumor necrosis factor (TNF)-${\alpha}$ were lower (p<0.05) in Pro (LPS-stimulated PBMCs+procyanidin) than those in CON (LPS-stimulated PBMCs+PBS) at 4 h after LPS challenge. These data suggest that dietary addition of procyanidin improves feed efficiency and anti-inflammatory cytokines of pigs.

• Journal of Animal Science and Technology
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• v.49 no.4
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• pp.481-490
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• 2007

An experiment was conducted to investigate the effects of dietary supplementation of MOS, lectin and organic acid mixture(Organic acid F, Organic acid G) on the egg production, egg quality, profile of leukocytes and erythrocytes, small intestinal microflora and immune response in laying hens. A total of 900 Hy-line BrownⓇ laying hens of 48 wks old were assigned to one of the following 6 dietary treatments:control(C), C+AvillamycinⓇ 6ppm, C+MOS 250ppm, C+lectin 12.5ppm, C+Organic acid F(formic acid 35.4%, formate 34.6%, potassium 30.0%) 0.3% and C+0rgarnic acid G(fumaric acid 23%, calcium formate 14%, potassium sorbate 5%, calcium propionate 7%) 0.06%. Each treatment was replicated five times with thirty birds per replicate, housed in 2 bird cages. Feeding trial lasted for 6 wks under 16 hours lighting regimen. All supplemental groups were higher than the control in 6 wks hen-day and hen-housed egg production showing the highest with MOS treatment(P<0.05). Soft & broken egg productions were lower in supplemental groups than in the control except lectin treatment(P<0.05). Eggyolk color of supplemental groups was higher than that of the control except Organic acid G treatment(P<0.05). The values of RBC, HB, MCHC were highest in lectin treatment and lowest in MOS treatment(P<0.05). The numbers of intestinal microflora were not significantly different among the treatments. Serum IgG levels of all supplemental groups were higher than those of the control(P<0.05). In conclusion, for supplementation of antibiotics, immune modulators and organic acid mixture improved production parameters in general. Among the supplements, MOS showed the best performance in egg production and eggyolk color.

• ETRI Journal
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• v.37 no.1
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• pp.97-106
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• 2015

In this paper, MOS-triggered silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR-based ESD protection circuits with floating N+/P+ diffusion regions for inverter and light-emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded-gate NMOS (ggNMOS) in the MOS-triggered SCR-based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P-well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the N+/P+ floating diffusion region. The trigger voltage was improved by the partial insertion of a P-body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low- and high-voltage applications were designed using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology, with $100{\mu}m$ width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS-6008).

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.123-123
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• 2000

선폭이 초미세화됨에 따라 게이트 전극에서의 공핍 현상 및 불순물 확산의 물제를 갖는 poly-Si 게이트를 대체할 전극 물질로 텅스텐(W)이 많이 연구되어 왔다. 반도체 소자의 배선물질로 일찍부터 사용되어온 텅스텐은 내화성 금속의 일종으로 용융점이 높고, 저항이 낮다. 그러나, 일반적으로 사용되고 있는 CVD에 의한 텅스텐의 증착은 반응가스(WF6)로부터 오는 불소(F)의 게이트 산화막내로의 확산으로 인해 MOS 소자가 크게 열화될수 있다. 본 연구에서는 W/TiN 이중 게이트 전극 구조를 갖는 MOS 캐패시터를 제작하여 전기적 특성을 살펴보았다. P-Type (100) Si위에 RTP를 이용, 85$0^{\circ}C$에서 110 의 열산화막을 성장 및 POA를 수행한 후, 반응성 스퍼터링법에 의해 상온, 6mTorr, N2/Ar=1/6 sccm, 100W 조건에서 TiN 박막을 150, 300, 500 의 3그룹으로 증착하였다. 그 위에 LPCVD 방법으로 35$0^{\circ}C$, 0.7Torr, WF6/SiH4/H2=5/5~10/500sccm 조건에서 2000~3000 의 텅스텐을 증착하였다. Photolithography 공정 및 습식 에칭을 통해 200$\mu\textrm{m}$$\times$200$\mu\textrm{m}$ 크기의 W/TiN 복층 게이트 MOSC를 제작하였다. W/TiN 복측 게이트 소자와 비교분석하기 위해 같은 조건의 산화막을 이용한 알루미늄(Al) 게이트, 텅스텐 게이트 MOSC를 제작하였다. 35$0^{\circ}C$에서 증착된 텅스텐 박막은 10~11$\Omega$/ 의 면저항을 가졌고 미소한 W(110) peak값을 나타내는 것으로 보아 비정질 상태에 가까웠다. TiN 박막의 경우 120~130$\Omega$/ 의 면저항을 가졌고 TiN (200)의 peak 값이 크게 나타난 반면, TiN(111) peak가 미소하게 나타났다. TiN 박막의 두께와 WF/SiH4의 가스비를 변화시켜가며 제작된 MOS 캐패시터를 HF 및 QS C-V, I-V 그리고 FNT를 통한 전자주입 방법을 이용하여 TiN 박막의 불소에 대한 확산 방지막 역할을 살펴 보았다. W/TiN 게이트 MOS 소자는 모두 순수 텅스텐 게이트보다 우수하였고, Al 게이트와 유사한 전기적 특성을 보여주었다. W/TiN 게이트 MOS 소자는 모두 순수 텅스텐 게이트보다 우수하였고, Al 게이트와 유사한 전기적 특성을 보여주었다. TiN 박막이 300 , 500 이고 WF6/SiH4의 가스비가 5:10인 경우 소자 특성이 우수하였으나, 5:5의 경우에는 FNT 전자주입 특성이 열화되기 시작하였다. 그리고, TiN박막의 두께가 150 으로 얇아질 경우에는 WF6/SiH4의 가스비가 5:10인 경우에서도 소자 특성이 열화되기 시작하였다. W/TiN 복층 게이트 MOS 캐패시터를 제작하여 전기적인 특성 분석결과, 순수 텅스텐 게이트 소자의 큰 저전계 누설 전류 특성을 해결할 수 있었으며, 불소확산에 영향을 주는 조건이 WF6/SiH4의 가스비에 크게 의존됨을 알 수 있었다. TiN 박막의 증착 공정이 최적화 될 경우, 0.1$\mu\textrm{m}$이하의 초미세소자용 게이트 전극으로서 텅스텐의 사용이 가능할 것으로 보여진다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.207-209
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• 2004

Currently, for satisfying the needs of scaled MOSFET's a high quality thin oxide dielectric is desired because the properties of conventional $SiO_2$ film are not acceptable for these very small sized transistors. As an alternative gate dielectric have drawn considerable alternation due to their superior performance and reliability properties over conventional $SiO_2$, to obtain the superior characteristics of ultra thin dielectric films, $N_2O$ grown thin oxynitride has been proposed as a dielectric growtuanneal ambient. In this study the authors observed process characteristics of $N_2O$ grown thin dielectric. In view points of the process characteristics of MOS capacitor, the sheet resistance of 4.07$[\Omega/sq.]$, the film stress of $1.009e^{10}[dyne/cm^2]$, the threshold voltage$(V_t)$ of 0.39[V], the breakdown voltage(BV[V]) of 11.45[V] was measured in PMOS. I could achieve improved electrical characteristics and reliability for deep submicron MOSFET devices with $N_2O$ thin oxide.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.17-23
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• 2005

The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.339-339
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• 2012

현재 MOS 소자에 사용되고 있는 $SiO_2$ 산화막은 그 두께가 얇아짐에 따라 Gate Leakage current와 여러 가지 신뢰성 문제가 대두되고 있고, 이를 극복하고자 High-k물질을 사용하여 기존에 발생했던 Gate Leakage current와 신뢰성 문제를 해결하고자 하고 있다. 본 실험에서는 High-k(hafnium) Gate Material에 온도 변화를 주었을 때 여러 가지 전기적인 특성 변화를 보는 방향으로 연구를 진행하였다. 기본적인 P-Type Si기판을 가지고, 그 위에 있는 자연적으로 형성된 산화막을 제거한 후 Hafnium Gate Oxide를 Atomic Layer Deposition (ALD)를 이용하여 증착하고, Aluminium을 전극으로 하는 MOS-Cap 구조를 제작한 후 FGA 공정을 진행하였다. 마지막으로 $300^{\circ}C$, $450^{\circ}C$로 30분정도씩 Annealing을 하여, 온도 조건이 다른 3가지 종류의 샘플을 준비하였다. 3가지 샘플에 대해서 각각 I-V (Gate Leakage Current), C-V (Mobile Charge), Interface State Density를 분석하였다. 그 결과 Annealing 온도가 올라가면 Leakage Current와 Dit(Interface State Density)는 감소하고, Mobile Charge가 증가하는 것을 확인할 수가 있었다. 본 연구는 향후 High-k 물질에 대한 공정 과정에서의 다양한 열처리에 따른 전기적 특성의 변화 대한 정보를 제시하여, 향후 공정 과정의 열처리에 대한 방향을 잡는데 도움이 될 것이라 판단된다.

• Korean Journal of Poultry Science
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• v.36 no.2
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• pp.125-131
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• 2009

This study was conducted to investigate the effects of dietary supplementation of mannan-oligosaccharides (MOS) and fructo-oligosaccharides (FOS) on the performance, immune response and small intestinal microflora in laying hens. A total of 960 Hy-Line $Brown^{(R)}$ laying hens of 27 wks old, housed in 2 bird cages, were assigned in a completely randomized block design into one of the following 6 dietary treatments: control, antibiotic (6 ppm avilamycine), 0.025% MOS, 0.05% MOS, 0.25% FOS, and 0.5% FOS. Each treatment had 4 replicates of 40 birds and was fed ad libitum for 6 wks under 16 h lighting regimen. There were significant differences among treatments in hen-day and hen-housed egg production. Hen-day egg production in 0.025% MOS was significantly higher than that of control. Hen-housed egg production in antibiotic-treated group was significantly higher compared with control. Egg weight, feed intake and feed conversion were not significantly different among treatments. Egg shell thickness was highest in 0.25% FOS, but was not significantly different among the rest of treatments. There were no significant differences among treatments in egg shell strength, egg shell color, egg yolk color and Haugh unit. IgG concentrations in serum were not significantly different among treatments. On the other hand, IgA concentrations of the treated birds tended to be increased compared with control. Dietary treatments tended to decrease Cl. perfringens and E. coli, and to increase Lactobacillus spp. The result of this experiment showed that dietary supplementation of MOS and FOS in laying hens tended to improve egg production comparable to the supplementation of antibiotics. The level of serum IgA and small intestinal microflora were also significantly affected by the treatments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• Asian-Australasian Journal of Animal Sciences
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• v.22 no.4
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• pp.550-556
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• 2009

This study was designed to evaluate the effects of dietary prebiotic (mannan oligosaccharide = MOS) and probiotic (Saccharomyces cerevisiae = SC) in finishing turkey diets on carcass, cut yield, meat composition and colour. A total of 72 ten-weeksold Big6 male turkey poults were used in the trial. There were eight replicate floor pens per floor with three birds in each. The experiment lasted up to 20 wks of age. The trial was set up as a completely randomized design with 3 dietary treatments. The treatments were: i) negative control (C, no additive); ii) MOS 1 g per kg of diet and iii) SC 1 g per kg of diet (strain SC47, $300{\times}10^{10}$ CFU/kg). Body weight (BW) and feed intake were determined for each of the two week intervals. Twenty-four birds were slaughtered and eviscerated to determine carcass, carcass parts and internal organ weights at 20 wks of age. Meat colour and pH levels were measured 24 h after slaughter. The dietary treatments did not affect BW and average daily gain during the trial (p>0.05). The average daily feed intake and feed conversion ratio of turkey toms fed with MOS were higher than those of control and SC groups during the overall period (p<0.05). The dietary treatments did not affect carcass yield, breast meat, thigh, wing, liver, heart, empty gizzard, intestine, and abdominal fat pad proportions and meat pH, composition and pigmentation (p>0.05). These results suggest that the addition of MOS and SC is not likely to produce any performance or carcass characteristics in finishing turkeys at 10 to 20 wks of age.