• 제목/요약/키워드: I/O devices

검색결과 425건 처리시간 0.024초

입자상물질과 Ash양이 디젤매연여과장치 내의 배압 및 유동균일도에 미치는 영향 (Effect of Particulate Matter and Ash Amount on Pressure Drop and Flow Uniformity of Diesel Particulate Filter Reduction System)

  • 김윤지;한단비;서태원;오광철;백영순
    • 청정기술
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    • 제26권1호
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    • pp.22-29
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    • 2020
  • 최근 미세먼지 증가로 인하여 디젤엔진의 배출 규제가 강화됨에 따라 디젤 매연여과장치에 관심이 급증하게 되었으며, 특히 디젤 배기가스 후처리 장치의 고효율화에 대한 기술개발이 더욱 요구되고 있다. 이에 대한 일환으로서 디젤매연여과장치(diesel particulate filter, DPF) 내 배기가스의 유동 균일도를 향상시키고 배압을 낮추어서 배기가스처리 효율을 높이는 연구가 많이 되고 있다. 본 연구에서는 ANSYS Fluent를 이용하여 직경 12"의 DPF와 디젤산화촉매(diesel oxidation catalyst, DOC)를 장착한 디젤 매연여과장치에서의 배기가스의 유속과 온도, DPF IO ratio, Ash와 PM양에 따른 배압에 미치는 영향을 시뮬레이션 하여 배압을 낮추는 최적화 연구를 하였다. 결과로서 배기가스의 온도와 유속이 낮을수록 배압이 낮아졌으며, PM양이 Ash양보다 배압에 더 큰 영향을 주는 것으로 나타냈다. 또한 비대칭 DPF가 대칭 DPF에 비해 배압이 더 낮게 나타냈으나, 유동 균일도의 경우는 다양한 변수에 관계없이 일정하게 나타냈다. european stationary cycle (ESC), european transient cycle (ETC) 조건에서 PM의 정화효율은 비대칭, 대칭 DPF 관계없이 유사하나, particle number (PN)의 정화효율에서는 비대칭 DPF가 대칭 DPF에 비해 높게 나타냈다.

UV경화성 폴리머를 이용한 미소유체 통합접속 벤치 개발 및 전기/유체적 특성평가 (Electrical and Fluidic Characterization of Microelectrofluidic Bench Fabricated Using UV-curable Polymer)

  • 윤세찬;진영현;조영호
    • 대한기계학회논문집A
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    • 제36권5호
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    • pp.475-479
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    • 2012
  • 본 논문은 고차가지구조 폴리머인 AEO3000 를 이용한 UV 광경화 성형 공정을 제안하고자 한다. 이는 기존의 바이오칩 제작에 사용되는 PDMS 보다 경도가 높아 금속 전극 형성이 용이하고 제작 공정이 빠르다는 장점을 갖는다. AEO3000 을 이용하여 본 연구에서는 4 개의 소자를 전기적 유체적으로 연결할 수 있는 전기유체 통합벤치를 제작하고 미소유체 혼합소자와 세포분리소자를 연결, 본 소재와 공정이 바이오칩에 적용될 수 있음을 검증하였다. 전기 유체적 특성 분석 결과 전기적 접촉 저항은 $0.75{\pm}0.44{\Omega}$으로 충분히 작은 값을 보였으며, 유체 접속의 압력 저하는 8.3kPa로 기존의 튜브 연결 방법 대비 39.3% 개선된 값을 보였다. 통합벤치에 접속된 소자에 활성 및 비활성 효모를 주입하여 순차적인 혼합 및 재분리를 성공적으로 구현함으로써 본 소자에 적용된 AEO3000 및 UV 광경화 공정이 생체시료의 처리에 적용될 수 있음을 실험적으로 검증하였다. 이는 바이오 의료 분야에 적용 가능한 생체 친화적 소재의 고속 생산에 응용될 수 있다.

감압대기 및 불활성가스 분위기에서 적합한 정전기 제거장치의 개발 (Development of the Most Optimized Ionizer for Reduction in the Atmospheric Pressure and Inert Gas Area)

  • 이동훈;정필훈;이수환;김상효
    • 한국안전학회지
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    • 제31권3호
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    • pp.42-46
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    • 2016
  • In LCD Display or semiconductor manufacturing processes, the anti-static technology of glass substrates and wafers becomes one of the most difficult issues which influence the yield of the semiconductor manufacturing. In order to overcome the problems of wafer surface contamination various issues such as ionization in decompressed vacuum and inactive gas(i.e. $N_2$ gas, Ar gas, etc.) environment should be considered. Soft X ray radiation is adequate in air and $O_2$ gas at atmospheric pressure while UV radiation is effective in $N_2$ gas Ar gas and at reduced pressure. At this point of view, the "vacuum ultraviolet ray ionization" is one of the most suitable methods for static elimination. The vacuum ultraviolet can be categorized according to a short wavelength whose value is from 100nm to 200nm. this is also called as an Extreme Ultraviolet. Most of these vacuum ultraviolet is absorbed in various substances including the air in the atmosphere. It is absorbed substances become to transit or expose the electrons, then the ionization is initially activated. In this study, static eliminator based on the vacuum ultraviolet ray under the above mentioned environment was tested and the results show how the ionization performance based on vacuum ultraviolet ray can be optimized. These vacuum ultraviolet ray performs better in extreme atmosphere than an ordinary atmospheric environment. Neutralization capability, therefore, shows its maximum value at $10^{-1}{\sim}10^{-3}$ Torr pressure level, and than starts degrading as pressure is gradually reduced. Neutralization capability at this peak point is higher than that at reduced pressure about $10^4$ times on the atmospheric pressure and by about $10^3$ times on the inactive gas. The introductions of these technology make it possible to perfectly overcome problems caused by static electricity and to manufacture ULSI devices and LCD with high reliability.

Highly Doped Nano-crystal Embedded Polymorphous Silicon Thin Film Deposited by Using Neutral Beam Assisted CVD at Room Temperature

  • 장진녕;이동혁;소현욱;홍문표
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.154-155
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    • 2012
  • The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (< $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

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정신과 간호 실습에 대한 간호 대학생과 간호학교 학생들의 태도 비교 연구 (A Comparative Study on Attitude of the Collegiate an4 Non-Collegiate Nursing Students toward Their Clinical Affiliation in a Mental Hospital)

  • 김소야자
    • 대한간호학회지
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    • 제4권2호
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    • pp.17-31
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    • 1974
  • Today, over seventy five percent of nursing in Korea provide a psychiatric experience in the basic curriculum. The psychiatric affiliation presents numerous major problems of adjustment to the student. The Importance of positive attitude toward the nursing care of psychiatric patients is recognized by the nursing profession. I have fined out the unfavorable attitude of non collegiate nursing students toward psychiatric nursing affiliation by previous research. This study was undertaken in response to a felt need to explore the use of several devices which might yield information about attitudes toward psychiatric nursing as a basis for future planning of the program offered at a selected hospital. This study is designed to meet the following objectives; (1) In order to find out the expressed attitudes of fifty·three collegiate nursing students toward their psychiatric affiliation. (2) To compare responses given by selected group of collegiate and non collegiate nursing students to same questionnaire (3) To determine the relationship between the attitudes of nursing students toward psychiatric nursing and the type of instructions where experience was obtained. A questionnaire, a Korean translation of the "Psychiatric Nursing Attitude Questionnaire" by Moldered Elizabeth fletcher, was administered to fifty-three collegiate nursing students who had completed a four-week psychiatric affiliation in a S hospital psychiatric ward during May 7, 1973 to Dec. 16, 1973. - The questionnaire of 100 statements was administered in the following way; (1) Part Ⅰ, Preconceptions, was, given in individual conferences with each subject, during the first few days of their affiliation, and again during the final week of affiliation. The responses to Part I were oral. (2) Part Ⅱ, Expectations, Part Ⅲ, Personal Relations, Part Ⅳ, Personal Feelings, and Part V, Attitudes and Activities of Patients were given to all of the subjects in a group meeting during the second week of the affiliation, and again, during the fourth week at the termination of the affiliation. Responses to Parts Ⅱ, Ⅲ, Ⅳ·, and V, were written. Each of the 100 statements of the questionnaire was considered to be either Positive or Negative. A favorable response was assigned the positive value of 1 and an unfavorable response was assigned the Negative value of O. The coefficient of correlation was computed between the two sets of scores for the fifty-three nursing students, The mean score, the standard deviation, and the differences in the means on each of the five parts of the questionnaire were computed and the relationships calculated by at-test. The results of the study were as follows; 1. There was no significant correlation between the two sets of the scores for the fifty-three nursing students during the four-week psychiatric affiliation. (r= 0.36) 2. There was no significant difference in the mean scores between the first and final tests for any of the questionnaire. 3. The Part Ⅰ, Preconceptions, data indicated collegiate nursing students have positive attitudes in preconceptions than non collegiate nursing students and preconceptions toward the psychiatric affiliation which affect their psychiatric nursing experience. 4. The Part Ⅱ, Expectations, data indicated more appropriate expectations of collegiate nursing students related to pre psychiatric affiliation orientation and sufficient theory learning than non-collegiate nursing students. 5. The Part Ⅲ, Personal relations, data indicated some students have negative attitudes in personal relations with normal people in respect to psychological security and social responsibilities. 6. The Part Ⅳ, Personal feelings, data indicated nursing students have psychological insecurity & inappropriateness. 7. The Part V, Attitudes and activities of patients, data indicated collegiate nursing students have more positive attitudes to the psychotic behavior of certain situations due to sufficient theory learning. 8. The data indicated collegiate·nursing students have more positive attitude than non-collegiate nursing students. 5. The Part Ⅲ, Personal relations, data indicated some students have negative attitudes in personal relations with normal people in respect to psychological security and social responsibilities. 6. The Part Ⅳ, Personal feelings, data indicated nursing students have psychological insecurity & inappropriateness. 7. The Part V, Attitudes and activities of patients, data indicated collegiate nursing students have more positive attitudes to the psychotic behavior of certain situations due to sufficient theory learning. 8. The data indicated collegiate·nursing students have more positive attitude than non-collegiate nursing students through psychiatric affiliation.

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