• Journal of the Korean Magnetics Society
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• v.5 no.3
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• pp.216-221
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• 1995

Both manufacturing parameters and particles' chemical composition controll coercivity and its distribution of magnetic particles. The coercivity and its distribution are important properties for high density magnetic recording, so these are used as tool for evaluation of reproducibility of magnetic particles. We report in this paper the applications of dM/dH versus H curve, which is derived from magnetic hysteresis loop, to the evaluation of coercivity distribution of magnetic particles and oxidation studies of recording metal particles. The coercivity distri-bution can be estimated from the full width half rnaximun (FWHM) and the peak shape of the dM/dH versus H curve. The peak shape of the curve depends upon distribution of particles' coercivity. The peak of dM/dH versus H curve becomes broad and lor is splitted into two or rmre peaks. It depends on uniformity of particles' coercivity. When the coercivity difference between Ba-Ferrite and ${\gamma}-Fe_{2}O_{3}$ is larger than 600 Oe, the peak becomes broad and is consequently splitted into two peaks. Ununiformly substituted Ba-Ferrite particles show broad peak. It is apparent that the analysis of the curve is one of sensitive measuring techniques for determination of coercivity distri-bution and studies on magnetic properties of substituted Ba-Ferrite and oxidation of magnetic recording metal particles.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.64.1-64
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• 2003

A metal-ferroelectric [SrBi$_2$Ta$_2$O$\_$9/ (SBT)-high-k-insulator(PrOx)-semiconductor(Si) structure has been fabricated and evaluated as a key part of metal-ferroelectric-insulator-semiconductor-field-effect-transistor MFIS-FET memory, aiming to improve the memory retention characteristics by increasing the dielectric constant in the insulator layer and suppressing the depolarization field in the SBT layer. A 20-nm PrOx film grown on Si(100) showed both a high of about 12 and a low leakage current density of less than 1${\times}$ 10e-8 A/$\textrm{cm}^2$ at 105 MV/cm. A 400-nm SBT film prepared on PrOx/Si shows a preferentially oriented (105) crystalline structure, grain size of about 130 nm and subface roughness of 3.2 nm. A capacitance-voltage hysteresis is confirmed on the Pt/SBT/PrOx/Si diode with a memory window of 0.3V at a sweep voltage width of 12 V. The memory retention time was about 1 104s, comparable to the conventional Pt/SBT/SiO$\_$x/N$\_$y/(SiO$\_$N/)/Si. The gradual change of the capacitance indicates that some memory degradation mechanism is different from that in the Pt/SBT/SiON/Si structure.

• Journal of the Korean Society of Groundwater Environment
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• v.4 no.3
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• pp.144-152
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• 1997

In this study the experiment on water retention cure was conducted by using a volumetric pressure plate extractor for two different soils (SUS and KUS). When the volumetric pressure plate extractor is used, the volume of water removed from the soil sample at each increasing pressure step can be accurately measured and retained. When pressure values are subsequently reduced, the volume of water that returns to the soil can then also be accurately measured. The hysteresis effect of water retention curve was considered in the experiment. Parameters of water retention function were estimated by fitting experimental data with three proposed equations. Results of estimation showed that parameters of Gardner, Brooks-Corey and van Genuchten equations were found to be associated with air-entry value and width of size distribution. Consequently van Genuchten equation was proved to be best fined through the measured data points.

• Journal of Electrical Engineering and Technology
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• v.4 no.2
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• pp.219-228
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• 2009

The growing application and the numerous qualities of induction motors (1M) in industrial processes that require high security and reliability levels has led to the development of multiple methods for early fault detection. However, various faults can occur, such as stator short-circuits and rotor failures. Traditionally the diagnosis machine is done through a sinusoidal power supply, in the present paper we study experimentally the effects of the rotor failures, such as broken rotor bars in function of the ac supplying, the load and show the impact of the converter from diagnosis of the machine. The technique diagnosis used is based on the spectral analysis of stator currents or stator voltages respectively according to the types of induction motor ac supplying. So, four different ac supplying are considered: ${\odot}$ the IM is directly by the balanced three-phase network voltage source, ${\odot}$ the IM is fed by a sinusoidal current source given the controlled by hysteresis, ${\odot}$ the IM is fed (in open loop) by a scalar control imposing through ratio V/f=constant, ${\odot}$ the IM is controlled through a vector control using space vector pulse width modulation (SVPWM) technique inverter with an outer speed loop.

• Journal of the Korean Magnetics Society
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• v.1 no.1
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• pp.1-5
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• 1991

The magnetic properties of the polycrystalline ${(Fe_{2}O_{3})}_{1-x-y}{(In_{2}O_{3})}_{x}{(Eu_{2}O_{3})}_{y}$(x=0.01, y=0.02과 x=0.02, y=0.03) have been studied by the methods of X-ray diffraction, $M\"{o}ssbauer$ effect, and magnetic hysteresis measurement. The X-ray diffraction patterns show that the samples have a same crystal structure as $\alpha-Fe_{2}O_{3}$. From the analysis of the temperature dependence of the quadrupole splitting and average half-width, it is found that the Morin transition occurs in the sample of x=0.01 and y=0.02 and the spin angle defined as the angle between the [111] crystal axis and antiferromagnetic vector, changes from about $35^{\circ}$ to the (111) plane as increasing the temperature in the sample of x=0.02 and y=O.03. The temperature dependence of magnetic hyperfine field is analyzed by using the spin-wave theory. The isomer shift values at room temperature are found to be given by about 0.35mm/s for the samples which means that the Fe ions belong to $3^{+}ion$. The temperature dependence of isomer shift was analyzed by using the Debye model.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.40 no.5
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• pp.275-281
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• 2016

In this study, we investigate the pool boiling enhancement caused by perforated plates on top of a smooth surface. We conduct tests using R-123 at atmospheric pressure. It was shown that perforated plates significantly enhanced the pool boiling of the smooth surface. The reason may be attributed to the increased bubble contact area between the plates. The results showed that the enhancement ratio was dependent on the heat flux. At high heat flux, the enhancement ratio increased as the porosity increased. However, at low heat flux, the enhancement ratio decreased as the porosity increased. For the present investigation, the optimum configuration had a pore diameter of 2.0 mm, pore pitch of $2.5mm{\times}5.0mm$ or $5.0mm{\times}5.0mm$, and a gap width of 0.5 mm, which yielded heat-transfer coefficients that are close to those of GEWA-T. The optimum porosity for R-123 was significantly larger than that of water or ethanol. The reason for this may be the large liquid-to-vapor density ratio along with the small latent heat of vaporization of R-123. The perforated plates yielded smaller boiling hysteresis compared with that of the smooth surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.254.2-254.2
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• 2014

The Transmission Fourier Transform Infrared spectroscopy (FTIR) of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000~2300 cm-1. It indicated that the existence of many silicon phases and defect sources in the matrix of the SiOx films. The total hysteresis width is the sum of the flat band voltage shift (${\Delta}VFB$) due to electron and hole charging. At the range voltage sweep of ${\pm}15V$, the ${\Delta}VFB$ values increase of 0.57 V, 1.71 V, and 13.56 V with 1/2, 2/1, and 6/1 samples, respectively. When we increase the gas ratio of SiH4/N2O, a lot of defects appeared in charge storage layer, more electrons and holes are charged and the memory window also increases. The best retention are obtained at sample with the ratio SiH4/N2O=6/1 with 82.31% (3.49V) after 103s and 70.75% after 10 years. The high charge storage in 6/1 device could arise from the large amount of silicon phases and defect sources in the storage material with SiOx material. Therefore, in the programming/erasing (P/E) process, the Si-rich SiOx charge-trapping layer with SiH4/N2O gas flow ratio=6/1 easily grasps electrons and holds them, and hence, increases the P/E speed and the memory window. This is very useful for a trapping layer, especially in the low-voltage operation of non-volatile memory devices.

• Journal of Magnetics
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• v.21 no.1
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• pp.35-39
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• 2016

$Cr_{100-x}Ti_x$ amorphous texture-inducing layers (TIL) were investigated to realize highly (002) oriented $L1_0$ FePt-C granular films through hetero-epitaxial growth on the (002) textured bcc-$Cr_{80}Mn_{20}$ seed layer (bcc-SL). As-deposited TILs showed the amorphous phase in Ti content of $30{\leq}x(at%){\leq}75$. Particularly, films with $40{\leq}x{\leq}60$ kept the amorphous phase against the heat treatment over $600^{\circ}C$. It was found that preference of the crystallographic texture for bcc-SLs is directly affected by the structural phase of TILs. (002) crystallographic texture was realized in bcc-SLs deposited on the amorphous TILs ($40{\leq}x{\leq}70$), whereas (110) texture was formed in bcc-SLs overlying on crystalline TILs (x < 30 and x > 70). Correlation between the angular distribution of (002) crystal orientation of bcc-SL evaluated by full width at half maximum of (002) diffraction (FWHM) and a grain diameter of bcc-SL indicated that while the development of the lateral growth for bcc-SL grain reduces FWHM, crystallization of amorphous TILs hinders FWHM. $L1_0$ FePt-C granular films were fabricated under the substrate heating process over $600^{\circ}C$ with having different FWHM of bcc-SL. Hysteresis loops showed that squareness ($M_r/M_s$) of the films increased from 0.87 to 0.95 when FWHM of bcc-SL decreased from $13.7^{\circ}$ to $3.8^{\circ}$. It is suggested that the reduction of (002) FWHM affects to the overlying MgO film as well as FePt-C granular film by means of the hetero-epitaxial growth.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.3
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• pp.37-41
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• 2002

In this research, we investigate the properties of membrane and thin film sensor which is using magnetic resonance properties. we expect to $Si_xN_y$ and SiC materials as membrane materials, we measured thin film stress and properties to find the best membrane fabrication condition. Of the two membrane, $Si_xN_y$ thin film is the better than SiC thin film. because of an adequate tensile stress and lower thermal expansion coefficient as sensor structure layer. After performing deposition and patterning thin film sensor material on $Si_xN_y$, we analyzed the magnetic hysteresis and magnetic resonance frequency of sensor. If the magnetic field which is applied in sensor material is removed, magnetization made by magnetic field is transited to elastic mode. moreover. energy radiation is induced during the transition and voltage generates in sensor by energy radiation. At this moment, If voltage generation period is longer, mechanical vibration is induced and signal is generated by mechanical vibration. we also see that as the increase of thin film sensor' length and width, magnetic resonance frequency is decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.454-459
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• 2020

In this study, a TiO₂/TiO_2-x-based resistance variable memory was fabricated using a DC/RF magnetron sputtering system and ALD. In order to analyze the effect of oxygen plasma treatment on the performance of resistance random access memory (ReRAM), the TiO₂/TiO_2-x-based ReRAM was evaluated by applying RF power to the TiO_2-x oxygen-holding layer at 30, 60, 90, 120, and 150 W, respectively. The ReRAM was fabricated, and the electrical and surface area performances were compared and analyzed. In the case of ReRAM without oxygen plasma treatment, the I-V curve had a hysteresis curve shape, but the width was very small, with a relatively high surface roughness of the oxygen-retaining layer. However, in the case of oxygen plasma treatment, the HRS/LRS ratio for the I-V curve improved as the applied RF power increased; stable improvement was also noted in the surface roughness of the oxygen-retaining layer. It was confirmed that the low voltage drive was not smooth due to charge trapping in the oxygen diffusion barrier layer owing to the high intensity ReRAM applied with an RF power of approximately 150 W.