• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.3
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• pp.144-148
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• 2001

For the purpose of developing capacitive humidity sensor having interdigit electrodes, interdigit electrode was modeled and simulated to obtain capacitance and sensitivity as a function of geometric parameters like the structural gap and thichness. For the development of ASIC, switched capacitor signal conditioning circuits for capacitive humidity sensor were designed and simulated by cadence using 0.25um CMOS process parameters. The signal conditioning circuits are composed of amplifier for voltage gain control, and clock generator for sensor driving and switch control The characteristics of the fabricated sensors are; 1) sensitivity is 9fF/%R.H., 2) temperature coefficient of offset(TCO) is 0.4%R.H./$^{\circ}C$, 3) nonlinearity is 1.2%FS, 4) hysteresis is 1.5%FS in humidity range of 3%R.H. ${\sim}$ 98%R.H.. The response time is 50 seconds in adsorption and 70 seconds in desorption. Fabricated process used in this capacitive humidity sensor having interdigit electrode are just as similar as conventional IC process technology. Therefore this can be easily mass produced with low cost, simple circuit and utilized in many applications for both industrial and environmental measurement and control system, such as monitoring system of environment, automobile, displayer, IC process room, and laboratory etc..

• Journal of Magnetics
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• v.15 no.4
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• pp.194-198
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• 2010

In our present work, we developed a GMI (giant magnetoimpedance) sensor system to detect magnetic fields in the milli gauss range based on the asymmetric magnetoimpedance (AGMI) effect in Co-based amorphous ribbon with self bias field produced by field-annealing in open air. The system comprises magnetoimpedance sensor probe, signal conditioning circuits, A/D converter, USB controller, notebook computer, and program for measurement and display. Sensor probe was constructed by wire-bonding the cobalt based amorphous ribbon with dimensions $10\;mm\;{\times}\;1\;mm\;{\times}\;20\;{\mu}m$ on a printed circuit board. Negative feedback was used to remove the hysteresis and temperature dependence and to increase the linearity of the system. Sensitivity of the milli gauss meter was 0.3 V/Oe and the magnetic field resolution and environmental noise level were less than 0.01 Oe and 2 mOe, respectively, in an unshielded room.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.21-24
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• 1997

Ferroeletric LiNbO$_3$ thin films hale been prepared directly on Si(100) substrates by conventional RF magnetron spurttering system for nonvolatile memory applications. As-deposited films were performed RTA(Rapid Thermal Annealing) treatment in an oxygen atmosphere at 600 $^{\circ}C$ for 60 s. The rapid thermal annealed films were changed to poly-crystalline ferroelectric nature from amorphous of as-deposition. The resistivity of the ferroelectric LiNbO$_3$ film was increased from a typical vague of 1~2$\times$10$^{8}$ $\Omega$.cm before the annealing to about 1$\times$10$^{13}$ $\Omega$.cm at 500 kV/cm and reduce the interface state density of the LiNbO$_3$/Si(100) interface to about 1$\times$10$^{11}$ cm$^2$ . eV. Ferroelectric hysteresis measurements using a Sawyer-Tower circuit yielded remanent polarization (Pr) and coercive field (Ec) values of about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively.

• Journal of IKEEE
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• v.14 no.2
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• pp.51-57
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• 2010

A CMOS rail-to-rail high voltage buffer amplifier is proposed to drive the gamma correction reference voltage of large TFT LCD panels. It is operating by a single supply and only shows current consumption of 0.5mA at 18V power supply voltage. The circuit is designed to drive the gamma correction voltage of 8-bit or 10-bit high resolution TFT LCD panels. The buffer has high slew rate, 0.5mA static current and 1k$\Omega$ resistive and capacitive load driving capability. Also, it offers wide supply range, offset voltages below 50mV at 5mA constant output current, and below 2.5mV input referred offset voltage. To achieve wide-swing input and output dynamic range, current mirrored n-channel differential amplifier, p-channel differential amplifier, a class-AB push-pull output stage and a input level detector using hysteresis comparator are applied. The proposed circuit is realized in a high voltage 0.18um 18V CMOS process technology for display driver IC. The circuit operates at supply voltages from 8V to 18V.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.6
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• pp.715-720
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• 2016

This paper proposes a PWM (Pulse Width Modulation) voltage mode DC-DC step-up converter for portable devices. The converter, which is operated with a 1 MHz switching frequency, is capable of reducing the mounting area of passive devices, such as inductor and capacitor, and is suitable for compact mobile products. This step-up converter consists of a power stage and a control block. The circuit elements of the power stage are an inductor, output capacitor, MOS transistors Meanwhile, control block consist of OPAMP (operational amplifier), BGR (band gap reference), soft-start, hysteresis comparator, and non-overlap driver and some protection circuits (OVP, TSD, UVLO). The hysteresis comparator and non-overlapping drivers reduce the output ripple and the effects of noise to improve safety. The proposed step-up converter was designed and verified in Magnachip/Hynix 0.18um 1-poly, 6-metal CMOS process technology. The output voltage was 5 V with a 3.3 V input voltage, output current of 100 mA, output ripple less than 1% of the output voltage, and a switching frequency of 1 MHz. These designed DC-DC step-up converters could be applied to the Personal Digital Assistants(PDA), cellular Phones, Laptop Computer, etc.

• Journal of Biomedical Engineering Research
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• v.37 no.5
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• pp.168-177
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• 2016

In this paper we present an implantable pressure sensor to measure real-time blood pressure by monitoring mechanical movement of artery. Sensor is composed of inductors (L) and capacitors (C) which are formed by microfabrication and direct bonding on two biocompatible substrates (quartz). When electrical potential is applied to the sensor, the inductors and capacitors generates a LC resonance circuit and produce characteristic resonant frequencies. Real-time variation of the resonant frequency is monitored by an external measurement system using inductive coupling. Structural and electrical simulation was performed by Computer Aided Engineering (CAE) programs, ANSYS and HFSS, to optimize geometry of sensor. Ultrafast laser (femto-second) cutting and MEMS process were executed as sensor fabrication methods with consideration of brittleness of the substrate and small radial artery size. After whole fabrication processes, we got sensors of $3mm{\times}15mm{\times}0.5mm$. Resonant frequency of the sensor was around 90 MHz at atmosphere (760 mmHg), and the sensor has good linearity without any hysteresis. Longterm (5 years) stability of the sensor was verified by thermal acceleration testing with Arrhenius model. Moreover, in-vitro cytotoxicity test was done to show biocompatiblity of the sensor and validation of real-time blood pressure measurement was verified with animal test by implant of the sensor. By integration with development of external interrogation system, the proposed sensor system will be a promising method to measure real-time blood pressure.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.7
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• pp.77-84
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• 1995

We studied the effects of the Zr/Ti ration and the bottom electrode (Pt or ITO) on the electrical properties of PZT thin films prepared by sol-gel method. Their permittivities and tagent losses with the variation of frequencies were measured by the LCR meter and their maximum polarizations, remanent polarizations, and coercive fields were obtained from the hysteresis loops measured by the Sawyer-Tower circuit. For the PZT thin film of the Zr/Ti ration of 53/47, permittivity at 10kHz, coercive field, maximum and remanent polarizations ere measured as 952, 20.7kV/cm, 10.43${\mu}C/cm^{2}$ and 4.3${\mu}C/cm^{2}$, respectively. For the film of the Zr/Ti ration of 25/75, coercive field, maximum and remanent polarizations were measured as 33.12kV/cm, 5.59${\mu}C/cm^{2}$ and 1.5${\mu}C/cm^{2}$, respectively. For the film of the Zr/Ti ratio of 75/25, they were measured as 23.8kV/cm, 7.45${\mu}C/cm^{2}$, and 3.5${\mu}C/cm^{2}$, repectively. Our investigation into the effects of the lower electrode on the electrical properties of PZT films showed the following results. The permittivities of the PZT films deposited on the ITO electrode decreased more quickly than those of the PZT films on the Pt electrode. The tangent losses of the former films increased more quickly than those of the latter. These may be due to the degradation of the quality of the interface between the electrode and the film, which results from the diffusion of Pb. It is also noticeable that permittivities and tangent losses of the PZT films deposited on the ITO electrode varied differently with the Zr/Ti ratio. This may indicate that the quality of the interface between the electrode and the film changes with the Zr/Ti ration of the PZT film.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.134-140
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• 1997

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.8
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• pp.5541-5549
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• 2015

This paper introduces a safer and more power efficient heater by using induction heating, to apply to the semiconductor wafer fabrication exhaust gas cleaning system. The exhaust gas cleaning system is currently made with filament heater that generates an endothermic reaction of N2 gas for the removal of moisture. Induction theory, through the bases of theoretical optimization and electronic implementation, is applied in the design of the induction heater specifically for the semiconductor wafer exhaust system. The new induction heating design provides a solution to the issues with the current energy inefficient, unreliable, and unsafe design. A robust and calibrated design of the induction heater is used to optimize the energy consumption. Optimization is based on the calibrated ZVS induction circuit design specified by the resonant frequency of the exhaust pipe. The fail-safe energy limiter embedded in the system uses a voltage regulator through the feedback of the MOSFET control, which allows the system performance to operate within the specification of the N2 Heater unit. A specification and performance comparison from current conventional filament heater is made with the calibrated induction heater design for numerical analysis and the proof of a better design.