• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.159-159
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• 2013

In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Various carbon-source were used as organic precursor with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using cyclic voltammetry, ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. Electronic property of N-doped plasma thin film is changed as flow rate of the NH3 gas.

• 반도체디스플레이기술학회지
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• 제20권2호
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• pp.34-42
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• 2021

Recent cleaning technologies of mask in extremely ultraviolet semiconductor processes were reviewed, focused on newly developed issues such as particle size determination or hydrocarbon and tin contaminations. In detail, critical particle size was defined and proposed for mask cleaning where nanosized particles and its various shapes would result in surface atomic ratio increase vigorously. A new cleaning model also was proposed with amphoteric behavior of electrolytically ionized water which had already shown excellent particle removing efficiency. Having its non-equilibrium and amphoteric properties, electrolyzed ion water seemed to oxidize contaminant surface selectively in nano-scale and then to lift up oxidized ones from mask surface very effectively. This assumption should be further investigated in future in junction with hydrogen bonding and cluster of water molecules.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• 공업화학
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• 제10권6호
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• pp.843-847
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• 1999

본 연구에서는 유동층-화학증기침투에 의해 이염화이메틸규소(DDS)와 수소로부터 생성된 탄화규소를 활성탄에 증착시킨 세라믹 탄소/탄화규소복합체가 제조되었다. 4~12, 12~20, 20~40 mesh의 활성탄이 사용되었다. 증착 후 반응물인 이염화이메틸규소의 농도, 활성탄의 크기, 반응압력, 반응시간에 따른 반응후 각 시료의 표면적과 증착량 및 증착양상을 관찰하였다. 실험결과 DDS의 농도가 낮고 반응압력이 작을수록 시료 기공내에 고른 증착을 갖는 것을 알 수 있었다. 또한 기공직경과 표면적들이 어떠한 시점에서 최소값을 갖는 것으로 기공내부 증착에서 입자외부 표면 증착으로 바뀜을 알 수 있었다. DDS의 농도가 낮고 반응압력이 낮을 때 작은 탄화규소입자가 활성탄 표면에 더욱 고르게 증착되었다. 이 결과들은 SEM, TGA, 기공도측정장치, BET에 의해 확인되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• Korean Chemical Engineering Research
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• 제55권2호
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• pp.270-274
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• 2017

본 연구에서는 양자 역학 계산 이론 중 하나인 Density Functional Theory (DFT)를 사용하여 $Pd/Pd_3Fe$ 촉매 표면에서 개미산(HCOOH) 분해 반응으로부터 수소를 생산하는 반응 메커니즘을 분석하였다. 기존 연구에 따르면, 단일 원자 촉매 중에서 개미산 분해 반응에 가장 높은 수소 생산성을 기록하는 원자는 Pd 촉매이지만, 부 반응으로 생산되는 CO가 Pd에 독성을 띄우기 때문에 Pd 촉매의 성능을 저하시킨다. 이러한 단점을 극복하고자, Pd를 기반으로 Pd와 Fe를 3:1로 합금하여 $Pd_3Fe$가 코어(core) 형태로 존재하고 Pd가 표면에 위치한 core-shell $Pd/Pd_3Fe$ 촉매를 설계하여 개미산 분해 반응에 의한 수소 생산 속도를 계산하였다. 순수 Pd촉매 보다 $Pd/Pd_3Fe$ 촉매의 수소 생산 반응의 활성 에너지가 감소하였다. 그 이유는 Pd와 Fe가 합금화 되면서 $Pd_3Fe$의 격자 상수가 $2.76{\AA}$로 줄어 들어 HCOO의 흡착에너지를 0.03 eV 감소시켰고, Fe에서 표면 Pd로 전자가 이동하면서 표면 전자 구조가 변화하여 HCOO의 흡착에너지를 0.29 eV 낮추었기 때문이다. 본 연구에서 제안하는 결과를 바탕으로 추후 개미산으로부터 수소 생산이 더 용이한 새로운 촉매 설계 메커니즘을 제안하고자 한다.

• 멤브레인
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• 제14권3호
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• pp.201-206
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• 2004

열화학적 IS 공정에서 요오드화수소의 분해에 적용하기 위하여 화학증착법(CVD)으로 제조된 silica 막의 안정성을 HI-$H_2O$ 기상 혼합물에서 평가하였다. Si 원천으로 tetraethoxysilane을 사용하여 서로 다른 CVD 온도로 기공크기가 100 nm인 $\alpha$-alumina를 처리하였다. CVD온도는 $700^{\circ}C$, $650^{\circ}C$, $600^{\circ}C$이었다. $600^{\circ}C$에서 수행한 단일 성분의 투과 실험에서 측정한 막의 $H_2$/$N_2$ 선택도는 CVD 온도 $700^{\circ}C$의 M1 막은 43.2, $650^{\circ}C$의 M2 막은 12.6, $600^{\circ}C$의 M3 막은 8.7을 나타내었다. HI-$H_2O$ 기상 혼합물에서 안정성 실험은 $450^{\circ}C$에서 수행하였는데, CVD 온도 $650^{\circ}C$에서 처리된 막이 다른 온도에서 처리된 막보다 더 안정성이 더 좋은 결과를 얻었다.

• 전기화학회지
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• 제12권1호
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• pp.47-53
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• 2009

본 연구에서는 불순물이 포함된 Al 기판으로부터 두 단계의 양극산화 (anodization) 법에 의해 균일한 나노기공을 갖는 AAO(Anodic Aluminum Oxide)을 제조하였다. 생성된 AAO템플릿 위에 Deposition-Precipitation(DP)방법을 사용하여 수직으로 형성된 $TiO_2$ 나노섬유에 Au를 첨가시켜 2 wt.% $Au/TiO_2$ 나노섬유룰 제조하였다. 두 단계의 양극산화를 통해 규칙적으로 배열된 AAO 기공 형상과 기판 위에 수직으로 배향된 $TiO_2$ 나노섬유의 형상을 SEM을 통해 확인하였다. 또한 $Au/TiO_2$ 나노섬유의 특성은 XRD와 Raman 분석을 통하여 $TiO_2$의 아나타제(anatase)와 루타일(rutile) 결정구조와 $TiO_2$ 나노섬유에 담지된 Au의 존재를 확인하였다. 또한 일산화탄소(CO) 산화반응을 통해 AAO(Anodic Aluminum Oxide)기판 위에 형성된 $TiO_2$와 2 wt% $Au/TiO_2$ 나노섬유의 광촉매적 활성을 비교하였다.

• Asian-Australasian Journal of Animal Sciences
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• 제17권2호
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• pp.263-270
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• 2004

A repeated $4{\times}4$ Latin square design was conducted with eight ileal cannulated castrates to examine the effect of source of starch and fiber on nutrient balance and energy metabolism. Pigs were fed on one of the four experimental diets: Control diet (C) mainly based on cooked rice; and diets P, S and W with the inclusion of either raw potato starch, sugar beet pulp or wheat bran supplementation, respectively. With the exception of an increased (p<0.05) energy loss from methane production with diet S observed, no significant differences (p>0.05) in the ratio of metabolizable energy (ME)/digestible energy, the utilization of ME for fat deposition and for protein deposition, energy loss as hydrogen and urinary energy were found between diets. The efficiency of utilization of ME for maintenance was lower (p<0.05) with diets P and S than with diet C. The inclusion of fiber sources (sugar beet pulp or wheat bran) or potato starch reduced the maintenance energy requirement. The fecal energy excretion was increased (p<0.05) with either sugar beet pulp or wheat bran supplementation, while it was unaffected (p>0.05) by addition of potato starch. In comparison with diets C and P, a lowered ileal or fecal digestibility of energy with diets S and W was observed (p<0.05). Feeding sugar beet pulp caused increased (p<0.05) daily production of methane and carbon dioxide and consequently increased energy losses from methane and carbon dioxide production, while it did not influence the daily hydrogen production (p>0.05). An increased (p<0.05) proportion of NSP excreted in feces was seen by the supplementation of wheat bran. Higher NSP intake caused an increased daily amount of NSP in the ileum, but the ileal NSP proportion as a percentage of NSP intake was unaffected by diets. Feeding potato starch resulted in increased daily amount of starch measured in the ileum and the proportion of ileal starch as a percentage of starch intake, while no significant influence on fecal starch was found. Higher (p<0.05) daily amount of fecal starch and the proportion of fecal starch as a percentage of starch intake were found with fiber sources supplementation compared with diets C and P. By increasing the dietary NSP content the fecal amount of starch increased (p<0.01).