• Korean Journal of Materials Research
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• v.8 no.8
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• pp.751-756
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• 1998

Effects of remote hydrogen plasma cleaning process parameters on the removal of Fe impurities on Si surfaces and the Fe removal mechanism were investigated. Fe removal efficiency is enhanced with decreasing the plasma exposure time and increasing the rf-power. The optimum plasma exposure time and rf-power are 1 min and 100W. respectively, in the range below 10 min and 100W. Fe removal efficiency is better under lower pressures than higher pressures, and the optimum $\textrm{H}_2$ flow rate was found to be 20 and 60sccm, respectively, under a low and a high pressure. The post-RHP(remote hydrogen plasma) annealing enhanced metallic contaminants removal efficiency, and the highest efficiency was achieved at $600^{\circ}C$. According to the AFM analysis results Si surface roughness was improved by 30-50%, which seems to be due to the removal of particles by the plasma cleaning. Also. Fe impurities removal mechanisms by remote hydrogen plasma are discussed.

• Journal of Pharmacopuncture
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• v.18 no.2
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• pp.7-18
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• 2015

Objectives: Lawsone (1,4 naphthoquinone) is a non redox cycling compound that can be catalyzed by DT diaphorase (DTD) into 1,2,4-trihydroxynaphthalene (THN), which can generate reactive oxygen species by auto oxidation. The purpose of this study was to evaluate the toxicity of the phytomarker 1,4 naphthoquinone and its metabolite THN by using the molecular docking program AutoDock 4. Methods: The 3D structure of ligands such as hydrogen peroxide ($H_2O_2$), nitric oxide synthase (NOS), catalase (CAT), glutathione (GSH), glutathione reductase (GR), glucose 6-phosphate dehydrogenase (G6PDH) and nicotinamide adenine dinucleotide phosphate hydrogen (NADPH) were drawn using hyperchem drawing tools and minimizing the energy of all pdb files with the help of hyperchem by $MM^+$ followed by a semi-empirical (PM3) method. The docking process was studied with ligand molecules to identify suitable dockings at protein binding sites through annealing and genetic simulation algorithms. The program auto dock tools (ADT) was released as an extension suite to the python molecular viewer used to prepare proteins and ligands. Grids centered on active sites were obtained with spacings of $54{\times}55{\times}56$, and a grid spacing of 0.503 was calculated. Comparisons of Global and Local Search Methods in Drug Docking were adopted to determine parameters; a maximum number of 250,000 energy evaluations, a maximum number of generations of 27,000, and mutation and crossover rates of 0.02 and 0.8 were used. The number of docking runs was set to 10. Results: Lawsone and THN can be considered to efficiently bind with NOS, CAT, GSH, GR, G6PDH and NADPH, which has been confirmed through hydrogen bond affinity with the respective amino acids. Conclusion: Naphthoquinone derivatives of lawsone, which can be metabolized into THN by a catalyst DTD, were examined. Lawsone and THN were found to be identically potent molecules for their affinities for selected proteins.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.59-63
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• 2017

The n-type GaN semiconductor has excellent properties as a photoelectrode, but it has disadvantage that its reliability is deteriorated due to the photocorrosion because the oxygen reaction occurs on the surface. For this reason, there are fundamental attempts to avoid photocorrosion reaction of GaN surfaces by using the p-type GaN as a photoelectrode where hydrogen generation reaction occurs on the surface. However, p-type GaN has a problem of low efficiency because of its high resistivity and low hole mobility. In this study, we try to improve the photocurrent efficiency by activation process for the p-type GaN. The p-type GaN was annealed for 1 min. at $500^{\circ}C$ in $N_2$ atmosphere. Hall effect measurement system was used for the electrical properties and potentiostat (PARSTAT4000) was used to measure the photoelectrochemical (PEC) characteristics. Consequently, the photocurrent density was improved more than 1.5 times by improving the activation process for the p-type GaN. Also, its reliability was maintained for 3 hours.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• Tribology and Lubricants
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• v.26 no.6
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• pp.317-321
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• 2010

Thin films of tin sulphide (SnS) have been formed by a novel 2-stage process where-in D.C. magnetron sputtering was used to deposit to thin films of tin (Sn) and the layers then sulphidised using 5% hydrogen sulphide ($H_2S$) gas in Argon. Although it was not found possible to deposit high quality thin films of tin directly onto glass substrates, excellent layers of tin were produced by using molybdenum (Mo) coated glass as the substrate material. The chemical and physical properties of the SnS layers formed were determined using scanning electron microscopy, energy dispersive x-ray analysis, x-ray diffraction studies and using reflectance versus wavelength measurements and these related to the conditions of synthesis. The data shows that it should be possible to produce conventional "substrate structure" devices based on the use of this technology.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.383-383
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• 2009

Silicon is commercially prepared by the reaction of high-purity silica with wood, charcoal, and coal, in an electric arc furnace using carbon electrodes, so called the metallurgical refining process, which produces ~98% pure Si (MG-Si). This can be further purified to solar grade silicon (SoG-Si) by various techniques. The most problematic impurity elements are B and P because of their high segregation coefficients. In this study, we explored the possibility of the using Cat-CVD for Si purification. The existing hot-wire CVD was modified to accommodate the catalyzer and the heating source. Mo boat (1.5 cm ${\times}$ 1 cm ${\times}$ 0.2 cm) was used as a heating source. Commercially available Si was purchased from Nilaco corporation (~99% pure). This powder was kept in the Mo-boat and heated to the purification temperature. In addition to the purification by cat-CVD technique, other methods such as thermal CVD, plasma enhanced CVD, vacuum annealing was also tried. It is found that the impurities are reduced to a great extent when treated with cat-CVD method.

• Applied Chemistry for Engineering
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• v.10 no.3
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• pp.354-361
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• 1999

The films annealed after physical deposition of titanium and chemical deposition of amorphous silicon by plasma were formed Si-rich titanium silicide with a good quality of crystallinity and had the various lattice structures due to orientation of lattices for epitaxy growth during annealing process. Band gap of the titanium silicide had 1.14~1.165 eV and the films annealed after chemical deposition of a-Si:H by plasma were influenced by a-Si and the dangling bond offered by desorption of hydrogen. Urbach tail ($E_0$) of the films annealed after physical deposition of Ti was nearly constant within a range of 0.045~0.05 eV, and the number of defect in films annealed after chemical deposition of a-Si:H by plasma was about 2~3 times more than that in annealed Ti/Si films.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.51-54
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• 1999

Hydrogenated amorphous silicon (a-Si:H) films are fabricated by Argon radical annealing (ArRA). The deposition rate of continuously deposited a-Si:H film is 1.9 $\AA$/s. As ArRA time are increased to 0.5 and 1 minute, the deposition rate are increased to 2.8 $\AA$/s and 3.3 $\\AA$/s. The deposition rate of a-si:H films with 2 and 3 minutes ArRA time are 3.3 $\AA$/s. As the ArRA time is increased, the optical band gap and the hydrogen contents in the a-Si:H films are increased and slightly decreased. The light-induced degradation of ArRA treated a-Si:H films are less than that of continuously deposited a-Si:H film. The dark conductivity and the conductivity activation energy ($E_a$) of continuously deposited a-Si:H film are decreased to 1/25 in room temperature and increased to 0.09eV By 1 hour light soaking, respectively. The dark conductivity and $E_a$ of ArRA treated a-Si:H film decreased to 1/3 in room temperature and increased to 0.03eV by 1 hour light soaking, respectively. We could improve the stability of a-Si:H films under the light soaking by ArRA technique and discussed the microscopic process of ArRA technique.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1604-1607
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• 2009

YAG laser crystallization of Si-based thin film deposited on plastic substrate has been studied. The Si-based thin films as crystallization precursor are with varied hydrogen (H) content. The effect of the H content on the crystallinity of the resulted poly-Si film has been investigated. The experimental results of the poly-Si crystallized by doublefrequency YAG laser shows that the initial dehydrogenation process could be left out if ${\mu}c$-Si was adopted as the crystallization precursor. The YAG laser annealing condition on plastic substrate and the crystallization results have been discussed in the paper.

• Advances in nano research
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• v.5 no.4
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• pp.359-372
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• 2017

Metallic copper nanoparticles were synthesised by reduction of copper ions in aqueous solution, and metal-metal bonding by using the nanoparticles was studied. A colloid solution of metallic copper nanoparticles was prepared by mixing an aqueous solution of $CuCl_2$ (0.01 M) and an aqueous solution of hydrazine (reductant) (0.2-1.0 M) in the presence of 0.0005 M of citric acid and 0.005 M of n-hexadecyltrimethylammonium bromide (stabilizers) at reduction temperature of $30-80^{\circ}C$. Copper-particle size varied (in the range of ca. 80-165 nm) with varying hydrazine concentration and reduction temperature. These dependences of particle size are explained by changes in number of metallic-copper-particle nuclei (determined by reduction rate) and changes in collision frequency of particles (based on movement of particles in accordance with temperature). The main component in the nanoparticles is metallic copper, and the metallic-copper particles are polycrystalline. Metallic-copper discs were successfully bonded by annealing at $400^{\circ}C$ and pressure of 1.2 MPa for 5 min in hydrogen gas with the help of the metalli-ccopper particles. Shear strength of the bonded copper discs was then measured. Dependences of shear strength on hydrazine concentration and reduction temperature were explained in terms of progress state of reduction, amount of impurity and particle size. Highest shear strength of 40.0 MPa was recorded for a colloid solution prepared at hydrazine concentration of 0.8 M and reduction temperature of $50^{\circ}C$.