• Membrane Journal
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• v.32 no.6
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• pp.456-464
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• 2022

Hydrogen permeation performance was analyzed by manufacturing Pd and Pd-Cu membranes through electroless plating. As a support for the Pd and Pd-Cu membranes, α-Al₂O₃ ceramic hollow fiber were used. Pd-Cu membrane was manufactured through sequential electroless plating, and then annealing was performed at 500°C, for 18 h in a hydrogen atmosphere to make Pd and Cu alloy. After annealing, the Pd-Cu membrane confirmed that the alloy was formed through EDS (Energy Dispersive X-ray Spectroscopy) and XRD (X-ray Diffraction) analysis. In addition, the thickness of the Pd and Pd-Cu plating layers were measured to be about 3.21 and 3.72 µm, respectively, through SEM (Scanning Electron Microscope) analysis. Hydrogen permeation performance was tested for hydrogen permeation in the range of 350~450°C and 1~4 bar in hydrogen single gas and mixed gas (H₂, N₂). In a single hydrogen gas, Pd and Pd-Cu membranes have flux of up to 54.42 and 67.17 ml/cm²⋅ min at 450 °C and 4 bar. In the mixed gas, it was confirmed that the separation factors of 1308 and 453 were obtained under the conditions of 450 °C and 4 bar.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.102-102
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.51-51
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.252-252
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• 2005

• Transactions of the Korean hydrogen and new energy society
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• v.12 no.3
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• pp.177-189
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• 2001

T hydrogen absorption-desorption behavior induced by thermal or hydrogen pressure cycling in a closed system was observed in hydrogen storage alloys, $(La-R-Mm)Ni_{4.5}Fe_{0.5}$, $MmNi_4Fe_{0.85}Cu_{0.15}$ and $(Ce-F-Mm)Ni_{4.7}Al_{0.2}Fe_{0.1}$. Thereby (La-R-Mm), Mm and (Ce-F-Mm) refer to La-rich mischmetal, mischmetal and Ce-free mischmetal respectively. As the results, it is found that the alloy stabilities during thermal cycling varies with alloy composition change. The highest stability occurs in $MmNi_4Fe_{0.85}Cu_{0.15}$ and the lowest stability in $(La-R-Mm)Ni_{4.5}Fe_{0.5}$. Comparing hydrogen pressure cycling with thermal cycling, pressure cycling causes severer degradation of the alloy $(Ce-F-Mm)Ni_{4.7}Al_{0.2}Fe_{0.1}$ than thermal cycling. When the 1500 times-cycled alloy is annealed at $400^{\circ}C$ for 3hrs under 1 atm of hydrogen pressure the hydrogen storage capacity is recovered only partially but not completely to the initial capacity. The amount of capacity loss after annealing is larger in the hydrogen pressure cycled samples than in the thermal cycled, suggesting an incoming of impure gas during hydrogen pressure cycling.

• Journal of the Korean Society for Precision Engineering
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• v.11 no.2
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• pp.173-181
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• 1994

A Cold spot temperature control system for the batch annealing furnace has been estabilished in order to reduce energy consumption to improve productivity and stabilize the propertics of products. Therefore we confirmed a relation between annealing cycle time and atmospheric gas, variation of coil cold spot temperature with time during heating and actual temperature measurements at mid-width of each coil during heating and actual temperature measurements at mid-width of each coil during soaking. The results of the tempaeature variation effect on the batch annealing are as follows. 1) Heating time is reduced to one half with increasing atmospheric gas flow rate and changing of atmospheric gas component from HNx to Ax gas, and annealing cycle time is reduced to 2.7 times. 2) In case of short time healing, the slowest heating part is the center of B coil, in case of long time heating, the low temperature point moves from the center of coil to inside coil. And the temperature in this part is higher than other parts when cooling. When finished heating, the cold spot is located 1/3 of coil inside in case of HNx atmospheric gas. But center of coil in case of Ax atmospheric gas. 3) The outside of top coil is the highest temperature point when heating, which becomes the lowest temperature point when cooling. So, this point becomes high temperature zone at heating and low temperature zone at cooling, It has relation according to atmospheric gas component and flow rate. 4) Soaking time at batch annealing cycle determination is made a decision by the input coil width, and soaking time for quality homogenization of 1214mm width coil must be 2.5 hours longer than that of 914mm width coil for the same ciol weight. 5) Annealing cycle time with Ax atmospheric gas is extended 1 hour in of slow cooling during 5 hours in order to avoid rapid cooling.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.145-145
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• 2010

In this paper, we report that the effects of hydrogen doping on the electrical and optical properties of typical transparent conducting oxide films such as ZnO and $SnO_2$ prepared by magnetron sputtering. Recently, density functional theory (DFT) calculations have shown strong evidence that hydrogen acts as a source of n-type conductivity in ZnO. In this work, the beneficial effect of hydrogen incorporation on Ga-doped ZnO thin films was demonstrated. It was found that hydrogen doping results a noticeable improvement of the conductivity mainly due to the increases in carrier concentration. Extent of the improvement was found to be quite dependent on the deposition temperature. A low resistivity of $4.0{\times}10^{-4}\;{\Omega}{\cdot}cm$ was obtained for the film grown at $160^{\circ}C$ with $H_2$ 10% in sputtering gas. However, the beneficial effect of hydrogen doping was not observed for the films deposited at $270^{\circ}C$. Variations of the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. Theoretical calculations also suggested that hydrogen forms a shallow-donor state in $SnO_2$, even though no experimental determination has yet been performed. We prepared undoped $SnO_2$ thin films by RF magnetron sputtering under various hydrogen contents in sputtering ambient and then exposed them to H-plasma. Our results clearly showed that the hydrogen incorporation in $SnO_2$ leads to the increase in carrier concentration. Our experimental observation supports the fact that hydrogen acting as a shallow donor seems to be a general feature of the TCOs.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.11A
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• pp.1091-1096
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• 2010

Stiction in microelectromechanical systems (MEMS) has been a major failure mechanism. Especially, in RF MEMS switches, moving parts often suffered in-use and release related stiction problems. Some materials and methods have been used to prevent this problem. Diamond-like carbon (DLC) has not only been used as a protective material owing to its good mechanical properties but also has been used as a hydrophobic material. Its properties could be controlled by post annealing treatment in various conditions. We synthesized DLC films using a radio frequency plasma enhanced chemical vapor deposition (RF PECVD) method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas. Then, the change of the hydrophobic property of the films was investigated undervarious annealing temperatures in nitrogen and in oxygen ambient. The films, that were annealed above $700^{\circ}C$ in nitrogen ambient, showed a high contact angle of water (> $90^{\circ}$) even though their mechanical property was sacrificed to some degree. The structural variation and the changes of the hydrophobic and mechanical properties of the DLC films were analyzed by Raman spectrum, contact angle measurement, surface profiler, and a nanoindentation test.

• Journal of the Korean institute of surface engineering
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• v.31 no.5
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• pp.237-244
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• 1998

In this stydy, submicron shallow trenches applied to STI(shallow tench isolation) were etched using inductively coupled $CI_2$/HBr and $CI_2/N_2$plasmas and the physical and electrical defects remaining on the etched silicon trench surfaces and the effects of various annealing and oxidation on the removal of the defects were studied. Using high resolution electron microscopy(HRTEM), Physical defects were investigated on the silicon trench surfaces etched in both 90%$CI_2$/ 10%$N_2$ and 50%$CI_2$/50%HBr. Among the areas in the tench such as trench bottom, bottom edge, and sidewall, the most dense defects were found near the trench bottom edge, and the least dense defects were found near the trench bottom edge, and least dense defects compared to that etched with ment as well as hydrogen permeation. Thermal oxidation of 200$\AA$ atthe temperature up to $1100^{\circ}C$apprars not to remove the defects formed on the etched silicon trenches for both of the etch conditions. To remove the physicall defects, an annealing treatment at the temperature high than $1000^{\circ}C$ in N for30minutes was required. Electrical defects measured using a capacitance-voltage technique showed the reduction of the defects with increasing annealing temperature, and the trends were similar to the results on the physical defects obtained using transmission electron microscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.362-362
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• 2009

$MgB_2$ bulk samples were sintered at different ambient. In this work, high purity Ar gas was added with oxygen and hydrogen gas, which can be regarded as impurity in a sense, as a possible dopant in the $MgB_2$. It was found that oxygen in the sintering ambient leads to a decrease in the critical current density $J_c$ at self field and lower fields. However, we can obtained higher $J_c$ at higher fields. It was also noted that $MgB_2$ samples sintered with 5% hydrogen in Ar revealed the increased $J_c$ at all fields compared to those processed in pure Ar ambient. From the XRD and FESEM analysis, the impurity gas in Ar can refine the $MgB_2$ grain size and result in increased grain. boundary, which can act as a strong flux pinning sites in $MgB_2$ samples. Also discussed are the effects of sintering ambient on irreversibility field, $H_{irr}$ and the upper critical field, $H_{C2}$.