• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.7-13
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• 2004

Experimental results are presented for the degradation of 3 nm-thick gate oxide under -2.5V $\leq$ V$_{g}$ $\leq$-4.0V stress and 10$0^{\circ}C$ conditions using P and NMOSFETs that are annealed with hydrogen or deuterium gas at high-pressure (5 atm). The degradation mechanisms are highly dependent on stress conditions. For low gate voltage, hole-trapping is found to dominate the reliability of gate oxide both in P and NMOSFETs. With increasing gate voltage to V$_{g}$ =-4.0V, the degradation becomes dominated by electron-trapping in NMOSFETs, however, the generation rate of "hot" hole was very low, because most of tunneling electrons experienced the phonon scattering before impact ionization at the Si interface. Statistical parameter variations as well as the gate leakage current depend on and are improved by high-pressure deuterium annealing, compared to corresponding hydrogen annealing. We therefore suggest that deuterium is effective in suppressing the generation of traps within the gate oxide. Our results therefore prove that hydrogen related processes are at the origin of the investigated oxide degradation.gradation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.699-700
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• 2013

Aluminum and hydrogen doped zinc oxide (AZHO) films were prepared by r.f. magnetron sputtering. The structural, electrical, and optical properties of the AHZO films were investigated in terms of the annealing conditions to study the thermal stability. The XRD measurements revealed that the degree of c-axis orientation was decreased and the crystallintiy of the films was deteriorated by the heat treatment. The electrical resistivity was significantly increased when the films were annealed at higher temperature. Although the optical transmittance of AHZO films didn't highly changed by heat treatment, the optical band gap was reduced, regardless of annealing temperature and duration. The thermal stability of AHZO films was worse compared to AZO films.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.570-576
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• 2002

Application of the aged Inconel 718 in hydrogen environment is seriously restraint by its high hydrogen embrittlement (HE) sensitivity. m previous researches, we have suggested the possibility and applicability of the laser surface annealing (LSA) process in improving the HE resistance of this alloy. Sequentially, a study on the effects of the precipitates in the Inconel 718 on its HE sensitivity was conducted in this research. Firstly, flat bar specimens were heat-treated to obtain various kinds of precipitation microstructures concerning the ${\gamma}$" phase and the 6 phase. Hydrogen was charged into the specimen by a cathodic charging process. The loss in reduction of area (RA) caused by hydrogen charging was used to assess the HE sensitivity. The HE sensitivity of the alloy was lowered with decreasing the volume fraction of ${\gamma}$". Moreover, it was possible to increase the HE resistance of the aged alloy by dissolving the $\delta$ phase, keeping the strength at the same level as that of the common aged alloy. Thus, we concluded that both the $\delta$ phase and the ${\gamma}$" phase affected the HE sensitivity of Inconel 718. Next, two kinds of notch tensile specimens were fabricated, one kind having $\delta$ phase and the other having no $\delta$ phase. All these specimens were aged via the same aging heat treatment process. The LSA process annealed a thin layer of the notch bottom of each specimen. One specimen of each kind was charged with hydrogen by the cathodic hydrogen charging process. Loss in the notch tensile strength (NTS) caused by hydrogen was used to evaluate the HE sensitivity. It was found that while the HE sensitivity of conventionally aged Inconel 718 was decreased by the LSA process, the HE sensitivity of the $\delta$-free aged Inconel 718 could further be decreased. Therefore, for applications in hydrogen environments, it is possible to fabricate alloys with both good HE resistance and high strength by controlling the precipitation conditions, and to improve HE resistance further via applying the LSA process.

• Journal of the Korean institute of surface engineering
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• v.27 no.4
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• pp.234-240
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• 1994

A large area impurity doping method for poly-Si TFT LCD has been developed. The advantage of this method is the doping of impurities into Si over a large area without mass separation and beam scanning. Phosphorus diluted in hydrogen was discharged by RF(13.56MHz) power and ions from discharged gas were accelerated by DC acceleration voltage and were implanted into deposited Si films. The annealing characteristic of this method was similar to that of the ion implantation method in the low doping concentration. Three mechanisms were evolved in the annealing characteristics of phosphorus doped Si films. Point defects annihilation and the retrogradation of dopant atoms at grain boundaries as a result of grain growth played a major role at low and high annealing temperature, respectively. However, due to the dopant segregation, the reverse annealing range existed at intermediate annealing temperature.

• Journal of the Korean Institute of Gas
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• v.5 no.2 s.14
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• pp.9-13
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• 2001

A complete spectrum of risk assessment including qualitative and quantitative approaches were performed for the POSCO's Batch Annealing Furnace (BAF) gas systems. The purpose of BAF is to enhance the quality of steel by annealing it with either hydrogen/nitrogen mixture gas or pure hydrogen gas. Number of gas leak scenarios were identified to generate frequency of their occurrences. With the hypothetical accident scenarios given, fire/explosion impact studies were performed to estimate magnitude of significant consequences. Several different indices were also presented from which practical safety improvement action items could be established.

• Journal of the Korean Society for Precision Engineering
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• v.13 no.8
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• pp.72-79
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• 1996

In a BAF(Batch Annealing Furnace), various studies have been pursued in order to reduce energy consumption rate to improve productivity and to stabilize the properties of products. The purpose of this study was to investigate the effects of both the atmospheric gas and convector plate shapes on the augmentation of heat transfer. The use of hydrogen instead of nitrogen as an atmospheric gas, combined with high convection in the BAF, has shown that considerable increases in furnace out put and significantly improved material quality are attainable. Because convector plate shapes make the atmosheric gas easily flow density, high diffusivity and reducing character of hydrogen, a better heat transfer rates resulting in uniform material temperature distribution and improved coil surface quality can be achieved. Also, it was found that the closed convector plate took more time for the annealing cycle time than the other plate type(open-type)by about ten hours.

• Transactions of Materials Processing
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• v.13 no.3
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• pp.205-210
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• 2004

The waveguide Bragg gratings have been fabricated by the phase-mask method. An excimer laser with maximum 600mJ output pulse energy and uniform phase masks have been used. Hydrogen loading is often used for enhancing the uv photosensitivity of the core, however, the resultant gratings show significant aging effect. In the present study, high temperature thermal annealing process has been investigated to obtain thermal gratings and process parameters are deduced.

• Transactions of the Korean hydrogen and new energy society
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• v.18 no.1
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• pp.40-45
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• 2007

Methylene blue(MB) was photocatalytically degraded with one-body photoanode and solar simulator to investigate the possible application to both environmental purification and photoelectrochemical cell for hydrogen production. Photoactive titanium dioxide was formed on both sides of Ti plate following steps such as rinsing-annealing-calcination or anodizing(20 V, 30 V)-annealing($350^{\circ}C$, $450^{\circ}C)$ after etching. The prepared titania plate($2cm{\times}2\;cm$, ca 1.6 mg $TiO_2$ on the basis of $1\;{\mu}m$ thickness) was used to degrade MB(10 ppm in 200 mL solution). The reaction tended to follow the Langmuir-Hinshelwood kinetics with zero order. Comparative experiments with Degussa P25 showed the same zero order kinetics when 2 mg of P25 had been used, while the first order kinetics when 200 mg used. This concludes the feasibility of the prepared titania plate as a material for the purification of low-level harmful organics and an electrode or a membrane for photoelectrochemical system for hydrogen production.

• Journal of Magnetics
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• v.8 no.3
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• pp.124-127
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• 2003

HDDR (hydrogenation, disproportionation, desorption, recombination) and mechanical milling processes have been applied to the $SmCo_{5}$ alloy in an attempt to produce a highly coercive powder. The $SmCo_{5}$ alloy had very high structural stability under the hydrogen atmosphere and the 1:5 phase was only partially disproportionated under up to 10 kgf/$\textrm{cm}^2$ hydrogen gas. The partially disproportionated material was recombined not into 1:5 phase after the HDDR, but rather into multi-phase mixture consisting of 1:5, 2:17, 2:7 and 1:7 phases. The $SmCo_{5}$ alloy HDDR-treated with hydrogen up to 10 kgf/$\textrm{cm}^2$ had poor coercivity. For a useful HDDR to prepare a high coercivity $SmCo_{5}$ alloy powder, much higher hydrogen pressure well exceeding 10 kgf/$\textrm{cm}^2$ would be required. The $SmCo_{5}$ alloy lump was amorphized by an intensive mechanical milling, and it was crystallised ultra-finely by a subsequent optimum annealing. The optimally annealed material had very high coercivity, and it was found that the mechanical milling followed by an annealing was an effective way of producing highly coercive $SmCo_{5}$ alloy powder.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.713-717
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• 2004

In this study, the etched trench properties including cross-sectional profile, surface roughness, and crystalline defects were investigated depending on the various silicon etching and additive gases, For the case of HBr$He-O_2SiF_4$ trench etching gas mixtures, the excellent trench profile and minimum defects in the silicon trench were achieved. Due to the residual oxide film grown by the additive oxygen gas, which acts as a protective layer during trench etching, the undercut and defects generation in the trench were suppressed. To improve the electrical characteristics of trench gate, the hydrogen annealing process after trench etching was also adopted. Through the hydrogen annealing, the trench corners might be rounded by the silicon atomic migration at the trench corners having high potential. The rounded trench corner can afford to reduce the gate electric field and grow a uniform gate oxide. As a result, dielectric strength and TDDB characteristics of the hydrogen annealed trench gate oxide were remarkably increased compared to the non-hydrogen annealed one.