• Korean Journal of Materials Research
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• v.8 no.8
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• pp.751-756
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• 1998

Effects of remote hydrogen plasma cleaning process parameters on the removal of Fe impurities on Si surfaces and the Fe removal mechanism were investigated. Fe removal efficiency is enhanced with decreasing the plasma exposure time and increasing the rf-power. The optimum plasma exposure time and rf-power are 1 min and 100W. respectively, in the range below 10 min and 100W. Fe removal efficiency is better under lower pressures than higher pressures, and the optimum $\textrm{H}_2$ flow rate was found to be 20 and 60sccm, respectively, under a low and a high pressure. The post-RHP(remote hydrogen plasma) annealing enhanced metallic contaminants removal efficiency, and the highest efficiency was achieved at $600^{\circ}C$. According to the AFM analysis results Si surface roughness was improved by 30-50%, which seems to be due to the removal of particles by the plasma cleaning. Also. Fe impurities removal mechanisms by remote hydrogen plasma are discussed.

• Journal of Pharmacopuncture
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• v.18 no.2
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• pp.7-18
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• 2015

Objectives: Lawsone (1,4 naphthoquinone) is a non redox cycling compound that can be catalyzed by DT diaphorase (DTD) into 1,2,4-trihydroxynaphthalene (THN), which can generate reactive oxygen species by auto oxidation. The purpose of this study was to evaluate the toxicity of the phytomarker 1,4 naphthoquinone and its metabolite THN by using the molecular docking program AutoDock 4. Methods: The 3D structure of ligands such as hydrogen peroxide ($H_2O_2$), nitric oxide synthase (NOS), catalase (CAT), glutathione (GSH), glutathione reductase (GR), glucose 6-phosphate dehydrogenase (G6PDH) and nicotinamide adenine dinucleotide phosphate hydrogen (NADPH) were drawn using hyperchem drawing tools and minimizing the energy of all pdb files with the help of hyperchem by $MM^+$ followed by a semi-empirical (PM3) method. The docking process was studied with ligand molecules to identify suitable dockings at protein binding sites through annealing and genetic simulation algorithms. The program auto dock tools (ADT) was released as an extension suite to the python molecular viewer used to prepare proteins and ligands. Grids centered on active sites were obtained with spacings of $54{\times}55{\times}56$, and a grid spacing of 0.503 was calculated. Comparisons of Global and Local Search Methods in Drug Docking were adopted to determine parameters; a maximum number of 250,000 energy evaluations, a maximum number of generations of 27,000, and mutation and crossover rates of 0.02 and 0.8 were used. The number of docking runs was set to 10. Results: Lawsone and THN can be considered to efficiently bind with NOS, CAT, GSH, GR, G6PDH and NADPH, which has been confirmed through hydrogen bond affinity with the respective amino acids. Conclusion: Naphthoquinone derivatives of lawsone, which can be metabolized into THN by a catalyst DTD, were examined. Lawsone and THN were found to be identically potent molecules for their affinities for selected proteins.

• Journal of the Korean Electrochemical Society
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• v.18 no.1
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• pp.31-37
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• 2015

Composition-controlled ternary components chalcogenides germanium tin sulfide ($Sn_xGe_{1-x}S$) nanoparticles were synthesized by a novel gas-phase laser photolysis reaction of tetramethyl germanium, tetramethyl tin, and hydrogen sulfide mixture. Subsequent thermal annealing of as-grown amorphous nanoparticles produced the crystalline orthorhombic phase nanoparticles. All these composition-tuned nanoparticles showed excellent cycling performance of the lithium ion battery. The germanium sulfide nanoparticles exhibit a maximum capacity of 1200 mAh/g after 70 cycles. As the tin composition (x) increases, the capacity maintains better at the higher discharge/charge rate. This novel synthesis method of tin germanium sulfide nanoparticles is expected to contribute to expand their applications in high-performance energy conversion systems.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.284-291
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• 1997

The electrode characteristics of two kinds of metal hydride electrodes using V-Ti (V-rich) based alloy were studied, in which one electrode was prepared by sintering the mixture of V-Ti alloy and Ni powders by a rapid thermal annealing technique and the other one was prepared using V-Ti-Ni ternary alloy, The discharge capacities of all electrodes during the charge-discharge cycling were completely deteriorated within 10 cycles. It appeared that the deterioration of the electrodes was caused by the dissolution of V in the near-surface region into the electrolyte and the formation of $TiO_2$ layer on the alloy particle surface. This degradation mechanism was supported by the facts that V is main hydride forming element and $TiO_2$ has very low electrical conductivity and hydrogen diffusivity.

• BMB Reports
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• v.36 no.6
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• pp.552-557
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• 2003

Oligomers with $\alpha$-aminooxy acids are reported to form very stable turn and helix structures, and they are supposed to be useful peptidomimetics for drug design. A recent report suggested that homochiral oxa-peptides form a strong eight-member-ring structure by a hydrogen bond between adjacent aminooxy-acid residues in a $CDCl_3$ solution. In order to design an $\alpha$-MSH analog with a stable turn conformation, we synthesized four tetramers and one pentamer, based on $\alpha$-MSH sequence, and determined the solution structures of the molecules by two-dimensional NMR spectroscopy and simulated annealing calculations. The solution conformations of the three peptidomimetic molecules (TLV, TDV, and TLL) in DMSO-$d_6$ contain a stable 7-membered-ring structure that is similar to a $\gamma$-turn in normal peptides. Newly-designed tetramer TDF and pentamer PDF have a ball-type rigid structure that is induced by strong hydrogen bonds between adjacent amide protons and carbonyl oxygens. In conclusion, the aminooxy acids, easily prepared from natural or unnatural amino acids, can be employed to prepare peptidomimetic analogues with well-defined turn structures for pharmaceutical interest.

• Journal of the Korean Chemical Society
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• v.43 no.5
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• pp.540-546
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• 1999

Solution conformation of cyclo-($Gln^1-Trp^2-Phe^3-{\beta}Ala^4-Leu^5-Met^6$), new NK-2 antagonist in dimethyl sulfoxide solution, has been determined by the use of two-dimensional nuclear magnetic resonance spectroscopy combined with simulated annealing calculations. The peptide exhibited converged structures with the atomic root-mean-square difference for the backbone atoms ($N,\;C^{\alpha},\;C'$) of all residues being 0.02${\AA}$ in the 25 annealed structures. The analysis of the structures indicated that the cyclic peptide has three intramolecular hydrogen bonds between $Met^6NH$ and ${\beta}Ala^4CO$, ${\beta}Ala^4NH$ and $Met^6CO$, $Phe^3NH$ and $Met^6CO$, and contain a type-I ${\beta}$-turn with Gln and Trp and ${\gamma}$-turn with Leu. The addition of an extra methylene group to Gly, i.e. P-Ala residue, may relax some unfavorable restraints in the cyclic backbone structure, hence enabling an additional hydrogen bond, which results in stabilizing one conformation.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.359-361
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• 1998

Visible photoluminescence(PU was observed from hydrogenated amorphous silicon deposited on silicon(a-Si : H/Si) using electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR- PECVD) with silane ($SiH_{4}$) gas as the reactant source. The PL spectra from a-Si : H/Si were very similar to those from porous silicon. Hydrogen contents of samples annealed under oxygen atmosphere for 2minutes at $500^{\circ}C$ by rapid thermal annealing were reduced to 1~2%, and the samples did not show visible PL, indicating that hydrogen has a very important role in the PL process of a- Si : H/Si. As the thickness of deposited a-Si : H film increased, PL intensity decreased. The visi¬ble PL from a-Si: H deposited on Si by ECR-PECVD with $SiH_{4}$ . is suggested to be from silicon hydrides formed at the interface between the Si substrate and the deposited a-Si : H film during the deposition.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.78-83
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• 2005

Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.

• Journal of the Korean institute of surface engineering
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• v.38 no.1
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• pp.7-13
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• 2005

Bismuth thin films were prepared on glass substrate with RF magnetron sputtering and effects of substrate temperature on surface morphology and their electrical transport properties were investigated. Grain growth of bismuth after nucleation and the onset of coalescense of grains at 393 K were observed with field emission secondary electron microscopy. Continuous thin films could not be obtained above 473 K because of grain segregation and island formation. Hall effect measurements showed that substrate heating yields the decrease of carrier density and the increase of mobility. Resistivity of bismuth film has its minimum (about 0.7 x 10/sup -3/ Ωcm) in range of 403～433 K. Annealing of bismuth films deposited at room temperature was carried out in a radiation furnace with flowing hydrogen gas. The change of resistivity was not significant due to cancellation of the decrease of carrier density and the increase of mobility. The abrupt change of electrical properties of film annealed above 523 K was found to be caused by partial oxidation of bismuth layer in x-ray diffraction analysis.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.302-305
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• 2016

In this paper, a low on-resistance and high current driving capability trench gate power metal-oxide-semiconductor field-effect transistor (MOSFET) incorporating a current sensing feature is proposed and evaluated. In order to realize higher cell density, higher current driving capability, cost-effective production, and higher reliability, self-aligned trench etching and hydrogen annealing techniques are developed. While maintaining low threshold voltage and simultaneously improving gate oxide integrity, the double-layer gate oxide technology was adapted. The trench gate power MOSFET was designed with a 0.6 μm trench width and 3.0 μm cell pitch. The evaluated on-resistance and breakdown voltage of the device were less than 24 mΩ and 105 V, respectively. The measured sensing ratio was approximately 70:1. Sensing ratio variations depending on the gate applied voltage of 4 V ~ 10 V were less than 5.6%.