• The Journal of Korean Academy of Prosthodontics
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• v.35 no.2
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• pp.344-356
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• 1997

The purpose of this study was to evaluate the long term tooth-brushing effect on the color change of specially treated IPS Empress porcelain surface. Staining techique with blue stain and liquid was used. The surfaces of the specimen were treated with 5% and 10% Hydrofluoric acid, 50mm and 250mm alumina sandblast, and then blue stain and liquid were used for external stain. After 29,200, 58,400, 87,600, 116,200 brushing strokes (equivalent to 2, 4, 6, 8 years each), color changes of the stained layer were measured with spectrophotometer(CM-3500d, MINOLTA, Tolkyo, Japan). The result of this study was obtained as follows : 1. The color changes were great after 29,200 tooth brushing strokes in every group, but from 29,200 strokes to 116,800 strokes, there were no significant color changes in each group. (p>0.05) 2. The greastest color changes were observed in 5% HF treated group and the least color changes were observed in $50{\mu}m$ aluminar sandblast treated group in every stroke (p<0.05), but no statistical difference between groups compared with control group (p>0.05). According to these results, pretreatment of I.P.S. Empress porcelain with alumina sandblast improved the color stability It is thought that about 8 year-tooth brushing strokes does not change the color of IPS Empress porcelain significantly on this condition, but long term follow-up will be needed.

• Journal of Korean Society of Environmental Engineers
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• v.35 no.4
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• pp.257-262
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• 2013

The fluorine-containing waste water tends to show a higher removal efficiency through the coagulative precipitation process with calcium. However the tetrafluoroborate produced from the etching process is difficult to remaval due to it's low reactivity with calcium. The objective of this study is improving the efficiency of fluoride ion removal in tetrafluoroborate through decomposing. Research on tetrafluoroborate decomposition depending on reaction pH, temperature, and aluminum dosage were conducted, using a laboratory-scale reactor. The result shows that the reaction of tetrafluoroborate with aluminum is faster with lower pH, higher water temperature, and higher Al/T-F (Aluminum/Total Fluoride) mole ratio. It is found that there was no big change in concentration after over 120 minutes of reaction. This study is to be able to improve the efficiency of tetrafluoroborate and fluoride wastewater treatment by using aluminum.

• Korean Journal of Materials Research
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• v.27 no.9
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• pp.501-506
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• 2017

Surface morphology and optical properties such as transmittance and haze effect of glass etched by physical and chemical etching processes were investigated. The physical etching process was carried out by pen type sandblasting process with $15{\sim}20{\mu}m$ dia. of $Al_2O_3$ media; the chemical etching process was conducted using HF-based mixed etchant. Sandblasting was performed in terms of variables such as the distance of 8 cm between the gun nozzle and the glass substrate, the fixed air pressure of 0.5bar, and the constant speed control of the specimen stage. The chemical etching process was conducted with mixed etching solution prepared by combination of BHF (Buffered Hydrofluoric Acid), HCl, and distilled water. The morphology of the glass surface after sandblasting process displayed sharp collision vestiges with nonuniform shapes that could initiate fractures. The haze values of the sandblasted glass were quantitatively acceptable. However, based on visual observation, the desirable Anti-Glare effect was not achieved. On the other hand, irregularly shaped and sharp vestiges transformed into enlarged and smooth micro-spherical craters with the subsequent chemical etching process. The curvature of the spherical crater increased distinctly by 60 minutes and decreased gradually with increasing etching time. Further, the spherical craters with reduced curvature were uniformly distributed over the etched glass surface. The haze value increased sharply up to 55 % and the transmittance decreased by 90 % at 60 minutes of etching time. The ideal haze value range of 3~7 % and transmittance value range of above 90 % were achieved in the period of 240 to 720 minutes of etching time for the selected concentration of the chemical etchant.

• Membrane Journal
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• v.30 no.1
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• pp.38-45
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• 2020

Although Lithium metal battery (LMB) has a very large theoretical capacity, it has a critical problem such as formation of dendrite which causes short circuit and short cycle life of the LMB. In this study, PDMS/GO composite with evenly dispersed graphene oxide (GO) nanosheets in poly (dimethylsiloxane) (PDMS) was synthesized and coated into a thin film, resulting in the effect that can physically suppress the formation of dendrite. However, PDMS has low ion conductivity, so that we attained improved ion conductivity of PDMS/GO thin film by etching technic using 5wt% hydrofluoric acid (HF), to facilitate the movement of lithium (Li) ions by forming the channel of Li ions. The morphology of the PDMS/GO thin film was observed to confirm using SEM. When the PDMS/GO thin film was utilized to lithium metal battery system, the columbic efficiency was maintained at 87.4% on average until the 100^th cycles. In addition, voltage profiles indicated reduced overpotential in comparison to the electrode without thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.241-241
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• 2008

Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.131.1-131.1
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• 2010

This study was conducted for engineering optimization for the gasification process which is the key factor for success of Taean IGCC gasification plant which has been driven forward under the government support in order to expand to supply new and renewable energy and diminish the burden of the responsibility for the reduction of the green house gas emission. The gasification process consists of coal milling and drying, pressurization and feeding, gasification, quenching and HP syngas cooling, slag removal system, dry flyash removal system, wet scrubbing system, and primary water treatment system. The configuration optimization is essential for the high efficiency and the cost saving. For this purpose, it was designed to have syngas cooler to recover the sensible heat as much as possible from the hot syngas produced from the gasifier which is the dry-feeding and entrained bed slagging type and also applied with the oxygen combustion and the first stage cylindrical upward gas flow. The pressure condition inside of the gasifier is around 40~45Mpg and the temperature condition is up to $1500{\sim}1700^{\circ}C$. It was designed for about 70% out of fly ash to be drained out throughout the quenching water in the bottom part of the gasifier as a type of molten slag flowing down on the membrane wall and finally become a byproduct over the slag removal system. The flyash removal system to capture solid particulates is applied with HPHT ceramic candle filter to stand up against the high pressure and temperature. When it comes to the residual tiny particles after the flyash removal system, wet scurbbing system is applied to finally clean up the solids. The washed-up syngas through the wet scrubber will keep around $130{\sim}135^{\circ}C$, 40~42Mpg and 250 ppmv of hydrochloric acid(HCl) and hydrofluoric acid(HF) at maximum and it is turned over to the gas treatment system for removing toxic gases out of the syngas to comply with the conditions requested from the gas turbine. The result of this study will be utilized to the detailed engineering, procurement and manufacturing of equipments, and construction for the Taean IGCC plant and furthermore it is the baseline technology applicable for the poly-generation such as coal gasification(SNG) and liquefaction(CTL) to reinforce national energy security and create new business models.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.399-399
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• 2013

Metal silicides는 Si 기반의microelectronic devices의 interconnect와 contact 물질 등에 사용하기 위하여 그 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 이 중 Rare-earth(RE) silicides는 저온에서 silicides를 형성하고, n-type Si과 낮은 Schottky Barrier contact (~0.3 eV)을 이룬다. 또한 낮은 resistivity와 Si과의 작은 lattice mismatch, 그리고 epitaxial growth의 가능성, 높은 thermal stability 등의 장점을 갖고 있다. RE silicides 중 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 n-channel schottky barrier MOSFETs의 source/drain으로 주목받고 있다. 또한 Silicon 기반의 CMOSFETs의 성능 향상 한계로 인하여 germanium 기반의 소자에 대한 연구가 이루어져 왔다. Ge 기반 FETs 제작을 위해서는 낮은 source/drain series/contact resistances의 contact을 형성해야 한다. 본 연구에서는 저접촉 저항 contact material로서 ytterbium germanide의 가능성에 대해 고찰하고자 하였다. HRTEM과 EDS를 이용하여 ytterbium germanide의 미세구조 분석과 면저항 및 Schottky Barrier Heights 등의 전기적 특성 분석을 진행하였다. Low doped n-type Ge (100) wafer를 1%의 hydrofluoric (HF) acid solution에 세정하여 native oxide layer를 제거하고, 고진공에서 RF sputtering 법을 이용하여 ytterbium 30 nm를 먼저 증착하고, 그 위에 ytterbium의 oxidation을 방지하기 위한 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, rapid thermal anneal (RTA)을 이용하여 N2 분위기에서 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium germanides를 형성하였다. Ytterbium germanide의 미세구조 분석은 transmission electron microscopy (JEM-2100F)을 이용하였다. 면 저항 측정을 위해 sulfuric acid와 hydrogen peroxide solution (H2SO4:H2O2=6:1)에서 strip을 진행하여 TiN과 unreacted Yb을 제거하였고, 4-point probe를 통하여 측정하였다. Yb germanides의 면저항은 열처리 온도 증가에 따라 감소하다 증가하는 경향을 보이고, $400{\sim}500^{\circ}C$에서 가장 작은 면저항을 나타내었다. HRTEM 분석 결과, deposition 과정에서 Yb과 Si의 intermixing이 일어나 amorphous layer가 존재하였고, 열처리 온도가 증가하면서 diffusion이 더 활발히 일어나 amorphous layer의 두께가 증가하였다. $350^{\circ}C$ 열처리 샘플에서 germanide/Ge interface에서 epitaxial 구조의 crystalline Yb germanide가 형성되었고, EDS 측정 및 diffraction pattern을 통하여 안정상인 YbGe2-X phase임을 확인하였다. 이러한 epitaxial growth는 면저항의 감소를 가져왔으며, 열처리 온도가 증가하면서 epitaxial layer가 증가하다가 고온에서 polycrystalline 구조의 Yb germanide가 형성되어 면저항의 증가를 가져왔다. Schottky Barrier Heights 측정 결과 또한 면저항 경향과 동일하게 열처리 증가에 따라 감소하다가 고온에서 다시 증가하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.454-454
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• 2014

Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.