• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.197-202
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• 1996

The highly oriented diamond particles were deposited on the mirror-polished (100) silicon substrates in the bell-jar type microwave plasma deposition system using a three-step process consisting if carburization, bias-enhanced nucleation and growth. By adjusting the geometry of the substrate and substrate holder, very dense disc-shaped plasma was formed over the substrate when the bias voltage was below -200V. Almsot perfectly oriented diamond films were obtained only in this dense disc-shaped plasma. From the results of the optical emission spectra of the dense disc-shaped plasma, it was found that the concentrations of atomic hydrogen and hydrocarbon radical were increased with negative bias voltage. It was also found that the highly oriented diamonds were deposited in the region, where the intensity ratios of carbonaceous species to atomic hydrogen are saturated.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.590-590
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• 2013

Direct growth of graphene using CVD method has been done on CVD grown boron nitride substrate. From the SEM image, we have shown that the size of grain of graphene could be clearly controlled by varying the amount of injected hydrocarbon. To convince the existence of graphene on boron nitride, XPS and Raman has been checked. Both B1s and N1s peaks in XPS spectra and the Raman peak around 1,370 $cm^{-1}$ demonstrated that boron nitride did remain after high temperature treatment during the graphene growth process. And along the graphene grain boundary, the Raman fingerprint of graphene was neatly appeared.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.760-763
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• 2007

The properties of carbon nanotube obtained by thermal chemical vapor deposition (CVD) process were investigated as a function of ammonia $(NH_3)$ gas in hydrocarbon gas, Fe catalyst thickness, and growth temperature. Fe catalyst was prepared by DC magnetron sputter and pre-treated with ammonia gas. CNTs were then grown with ammonia-acetylene gas mixture by thermal CVD. The diameter of these CNTs shows a strong correlation with the gas rate, the catalyst film thickness and temperature. From our results, it was found that the factors of grown CNTs positively acted to improve CNT quality.

• Carbon letters
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• v.13 no.4
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• pp.205-211
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• 2012

Methanol as a carbon source in chemical vapor deposition (CVD) graphene has an advantage over methane and hydrogen in that we can avoid optimizing an etching reagent condition. Since methanol itself can easily decompose into hydrocarbon and water (an etching reagent) at high temperatures [1], the pressure and the temperature of methanol are the only parameters we have to handle. In this study, synthetic conditions for highly crystalline and large area graphene have been optimized by adjusting pressure and temperature; the effect of each parameter was analyzed systematically by Raman, scanning electron microscope, transmission electron microscope, atomic force microscope, four-point-probe measurement, and UV-Vis. Defect density of graphene, represented by D/G ratio in Raman, decreased with increasing temperature and decreasing pressure; it negatively affected electrical conductivity. From our process and various analyses, methanol CVD growth for graphene has been found to be a safe, cheap, easy, and simple method to produce high quality, large area, and continuous graphene films.

• Journal of Environmental Science International
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• v.1 no.1
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• pp.19-33
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• 1992

The high oxidants, which occur the daily maximum concentrations in the afternoon, are transported into the other region via long range transport mechanisms or trapped within the shallow mixing boundary layer and then removed physically (deposition, transport by mountain wind, etc.) and chemically (reaction with local sources). Therefore, modeling formation of photochemical oxidants requires a complex description of both chemical and meteorolog ital processecs . In this study, as a part of air quality studies, we reviewed various aspects of photochemical modeling on the basis of currently available literature. The result of the review shows that the model is based on a set of coupled continuity equations describing advection, diffusion, transport, deposition, chemistry, emission. Also photochemical oxidant models require a large amount of input data concerned with all aspects of the ozone life cycle. First, emission inventories of hydrocarbon and nitrogen oxides, with appropriate spatial and temporal resolution. Second, chemical and photochemical data allowing the quantitative description of the formation of ozone and other photochemically-generated secondary pollutants. Third, dry deposition mechanisms particularly for ozone, PAN and hydrogen peroxide to account for their removal by absorption on the ground, crops, natural vegetation, man-made and water surfaces. Finally, meteorological data describing the transport of primary pollutants away from their sources and of secondary pollutants towards the sensitive receptors where environmental damage may occur. In order to improve our present study, shortcomings and limitation of existing models are pointed out and verification Process through observation is emphasized.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2006.05a
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• pp.100-109
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• 2006

In the regeneratively cooled combustion chambers using hydrocarbon fuels, coking occurs as the wall temperature increases which generates compounds deposition on the wall. This phenomenon reduces cooling capability of the coolant, finally it can cause damage to combustor by overheating of chamber wall. In this paper electrical heating equipment which is used for the coking experiments and the test results are introduced. The compatibilities of copper alloy with let A-1 were assessed at each condition based on the test results.

• Journal of the Semiconductor & Display Technology
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• v.2 no.1
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• pp.1-5
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• 2003

Plasma generator based on non-self-sustained low-pressure arc discharge has been examined as a tool for deposition of highly-adhesive hydrogenated amorphous diamond-like carbon(DLC) films. Since the discharge is stable in wide range of gas pressures and currents, this plasma source makes possible to realize both plasma-immersion ion implantation(PIII) and plasma-immersion ion deposition(PIID) in a unified vacuum cycle. The plasma parameters were measured as functions of discharge current. Discharge and substrate bias voltage parameters have been determined for the PIII and PIID modes. For PIID it has been demonstrated that hard and well-adherent DLC coating are produced at 200-500 eV energies per deposited carbon atom. The growth rates of DLC films in this case are about 200-300 nm/h. It was also shown that short(∼60$\mu\textrm{s}$) high-voltage(> 1kV) substrate bias pulses are the most favorable for achieving high hardness and good adhesion of DLC, as well as for reducing of residual intrinsic stress are.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.210.2-210.2
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• 2016

An inductively coupled plasma source was prepared for the deposition of a-C:H thin film. Properties of the inductively coupled plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe harmonic frequency were 13.56Mhz and 27.12Mhz. Dependencies of plasma parameters on process parameters were accord with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.143.1-143.1
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• 2015

An inductively coupled plasma source driven by 13.56MHz was prepared for the deposition of a-C:H thin film. Properties of the plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe at first and second harmonic frequency were 13.56Mhz and 27.12Mhz respectively. Dependencies of plasma parameters on process parameters were agreed with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• Journal of Electrochemical Science and Technology
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• v.7 no.1
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• pp.33-40
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• 2016

Sr_0.92Y_0.08TiO_3-δ (SYT) was investigated as an alternative anode in humidified CH₄ fuel for SOFCs at low temperatures (650 ℃-750 ℃) and compared with the conventional Ni/yttria-stabilized zirconia (Ni/YSZ) anode. The goal of the study was to directly use a hydrocarbon fuel in a SOFC without a reforming process. The cell performance of the SYT anode was relatively low compared with that of the Ni/YSZ anode because of the poor electrochemical catalytic activity of SYT. In the presence of CH₄ fuel, however, the cell performance with the SYT anode decreased by 20%, in contrast to the 58% decrease in the case of the Ni/YSZ anode. The severe degradation of cell performance observed with the Ni/YSZ anode was caused by carbon deposition that resulted from methane thermal cracking. Carbon was much less detected in the SYT anode due to the catalytic oxidation. Otherwise, a significant amount of bulk carbon was detected in the Ni/YSZ anode.