Growth and Properties of GaN on $\textrm{MgAl}_{2}\textrm{O}_{4}$ Substrate by Hydride Vapor Phase Epitaxy Method
($\textrm{MgAl}_{2}\textrm{O}_{4}$ 기판위에 GaN의 Hydride Vapor Phase Epitaxy성장과 특성)
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- Korean Journal of Materials Research
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- v.7 no.8
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- pp.707-713
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- 1997