• Journal of the Korean institute of surface engineering
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• v.43 no.6
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• pp.266-271
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• 2010

Ternary Mo-Cu-N films were deposited on Si wafer substrates with various copper contents by magnetron sputtering method using Mo target and Cu target in $Ar/N_2$ gaseous atmosphere. As increasing $N_2$ pressure, the microstructure of Mo-N films changed from ${\gamma}-Mo_2N$ of (111) having face-centered-cubic (FCC) structure to $\delta$-MoN of (200) having hexagonal structure. Detailed the microstructures of the Mo-Cu-N coatings were studied by X-ray diffraction, scanning electron microscopy and field emission transmission electron microscope. The results indicated that the incorporation of copper into the growing Mo-N coating led to the $Mo_2N$ and MoN crystallites were more well-distributed and refined and the copper existed in grain boundary. Ternary Mo-Cu-N films had a composite microstructure of the nanosized crystal crystalline ${\gamma}-Mo_2N$ and $\delta$-MoN surrounded by amorphous $Cu_3N$ phase.

• Applied Chemistry for Engineering
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• v.28 no.3
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• pp.290-293
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• 2017

In this study, the fundamental behavior of microdomains in block copolymer/nanoparticle composite thin films was examined. In this experiment, polystyrene-b-poly(2-vinylpyridine) block copolymer and CdSe nanoparticles having a noncentrosymmetric property were employed. Composite hybrid thin films were produced by a spin coating method, and changes in the internal structure of composite thin films were monitored mainly by transmission electron microscopy. In summary, nanoparticles resided inside the thin film relatively intact, however, the block copolymer microdomains rotated parallel to the electric field direction. This study will be very helpful for future research activities regarding behaviors of heterogeneous composite materials under external fields.

• Progress in Superconductivity and Cryogenics
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• v.15 no.2
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• pp.12-15
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• 2013

The pure and carbon (C)-doped $MgB_2$ thin films were fabricated on $Al_2O_3$ (0001) substrates at a temperature of $650^{\circ}C$ by using hot-filament-assisted hybrid physical-chemical vapor deposition technique. The $T_c$ value for pure $MgB_2$ film is 38.5 K, while it is between 30 and 35 K for carbon-doped $MgB_2$ films. Expansion in c-axis lattice parameter was observed with increase in carbon doping concentration which is in contrast to carbon-doped $MgB_2$ single crystals. Significant enhancement in the critical current density was obtained for C-doped $MgB_2$ films as compared to the undoped $MgB_2$ film. This enhancement is most probably due to the incorporation of C into $MgB_2$ and the high density of grain boundaries, both help in the pinning of vortices and result in improved superconducting performance.

• Journal of the Korean Applied Science and Technology
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• v.16 no.4
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• pp.317-322
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• 1999

Transparent films were prepared using the sol-gel process by mixing TEOS with PVA solution that was solved in EtOH and distilled water homogeneously. HCl, $CH_3COOH$ and $NH_4OH$ were used as catalysts of the sol-gel process, and for improving the flexibility of films glycerol was used as plasticizer. In case of each catalyst, transparency and tensile strength were increased, and glass transition temperature (Tg) was shifted to higher temperature with increasing TEOS ratio. Also, in case of adding the plasticizer, the flexibility of films was increased. On the contrary, transparency, thermal stability and tensile strength were decreased with increasing HCl and $NH_4OH$ ratio. Also, the range of being made of film type was expanded when $CH_3COOH$ was used than HCl and $NH_4OH$.

• Journal of the Korean institute of surface engineering
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• v.56 no.5
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• pp.335-340
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• 2023

Quinary component of 3㎛ thick Ti-Al-Si-Cu-N films were deposited onto WC-Co and Si wafer substrates by using an arc ion plating(AIP) system. In this study, the influence of copper(Cu) contents on the mechanical properties and microstructure of the films were investigated. The hardness of the films with 3.1 at.% Cu addition exhibited the hardness value of above 42 GPa due to the microstructural change as well as the solid-solution hardening. The instrumental analyses revealed that the deposited film with Cu content of 3.1 at.% was a nano-composites with nano-sized crystallites (5-7 nm in dia.) and a thin layer of amorphous Si₃N₄ phase.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.17 no.3
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• pp.51-58
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• 2018

In this paper, the organic material Poly(methyl methacrylate) PMMA is used with inorganic $Al_2O_3$ to fabricate organic-inorganic multilayer barrier thin films. The organic thin films are developed using a roll-to-roll electrohydrodynamic atomization system, whereas the inorganic are grown using a roll-to-roll low-temperature atmospheric pressure atomic layer deposition system. For the first time, these two technologies are used together to develop organic-inorganic multilayer barrier thin films in atmospheric condition. The films are grown under optimized parameters and classified into three classes based on the layer structures, when the total thickness of the barrier is maintained at ~ 160 nm. All classes of barriers show good morphological, optical and chemical properties. The $Al_2O_3$ films with a low average arithmetic roughness of 1.58 nm conceal the non-uniformity and irregularities in PMMA thin films with a roughness of 5.20 nm. All classes of barriers show a notably good optical transmission of ~ 85 %. The hybrid organic-inorganic barriers show water vapor and oxygen permeation in the range of ${\sim}3.2{\times}10^{-2}g/m^2/day$ and $0.015cc/m^2/day$ at $23^{\circ}C$ and 100% relative humidity. It has been confirmed that it can be mass-produced and used as a low-cost barrier thin film in various printing electronic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.97-98
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• 2009

Here, we describe a versatile strategy for precise control of the optoelectrical properties of the single walled carbon nanotube (SWNT)/silane binder hybrid films by noncovalent hybridization. Stable SWNT/silane binder solutions were prepared by direct mixing of high concentration CNT solutions and silane sol solutions. The critical binder content was determined by varying the amount of binder in the SWNT/binder solutions. A binder content of 50 wt% was used to prepare the other SWNT/binder solutions. This study demonstrates how the intermolecular interactions between the SWNTs and the silanes can affect the conductivity of the CNT/binder network films by characterizing the optoelectrical and Raman spectroscopic properties of the SWNT/silane films containing silane binders with various functional groups. The use of the PTMS binder with phenyl groups was found to be most effective in the fabrication of transparent and conductive films on glass substrates. Such a precise control of the optoelectrical properties of SWNT/binder films can be useful to fabricate the high performance conductive thin films, with ramifications for understanding the fundamental intermolecular interaction in carbon materials science.

• Polymer(Korea)
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• v.37 no.5
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• pp.579-586
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• 2013

Poly(vinyl alcohol)(PVA) nanocomposite films containing various saponite (SPT) clay contents were synthesized using a solution intercalation method. The thermal property, morphology, optical transparency, and gas permeability of the PVA nanocomposite films with various SPT contents in the range of 0 to 10 wt% were examined. PVA nanocomposite film containing 5 wt% SPT showed excellent thermal and gas barrier property. The hybrid films containing 5 wt% SPT were equibiaxially stretched with stretching ratios ranging from 150 to 250%. The clay dispersion, optical transparency, and gas permeability were also examined as a function of equibiaxial stretching ratio. The PVA nanocomposite films with various equibiaxial stretching ratios showed excellent optical transparency and barrier to oxygen permeability.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.118-118
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• 2011

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and AlOx-SAOL were fabricated and the electrical characteristics were evaluated. To further improve the scaling and to increase the program/erase speed, the high-k dielectric with a large barrier height such as Al2O3 can also act alternatively as a blocking layer for high-speed flash memory device application. The Al2O3 layer and AlOx-SAOL were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer which is consisted of AlOx-SAOL were sequentially deposited at $100^{\circ}C$. The floating gate is consisted of ZnO films, which are doped with copper. The floating gate of ZnO:Cu films was used for charge trap. The same as tunneling layer, floating gate were sequentially deposited at $100^{\circ}C$. By using ALD process, we could control the proportion of Cu doping in charge trap layer and observe the memory characteristic of Cu doping ratio. Also, we could control and observe the memory property which is followed by tunneling layer thickness. The thickness of ZnO:Cu films was measured by Transmission Electron Microscopy. XPS analysis was performed to determine the composition of the ZnO:Cu film deposited by ALD process. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was about 13V. The feasibility of ZnO:Cu films deposited between Al2O3 and AlOx-SAOL for NFGM device application was also showed. We applied our ZnO:Cu memory to thin film transistor and evaluate the electrical property. The structure of our memory thin film transistor is consisted of all organic-inorganic hybrid structure. Then, we expect that our film could be applied to high-performance flexible device.----못찾겠음......

• Composites Research
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• v.30 no.5
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• pp.288-296
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• 2017

The focus of this study is to experimentally investigate the heat dissipation characteristics of poly (methyl methacrylate) (PMMA) composite films with phase change materials (PCM) to resolve heat build-up problems encountered in various electronic devices. In this study, two different types of phase change materials were used to fabricate the composite films by compression molding method and PCM paste sealing method then compared. It was observed in this study that the heat dissipation capability of PCM/PMMA composite films was remarkably enhanced by applying graphite sheet or graphene film into the composite due to their high thermal conductivity. These PCM/ PMMA composite films were attached on the hot spot inside smart phone and tested its surface temperature change according to time. The heat dissipation capability of PCM/PMMA composite film incorporated smart phone was increased 154% and hybrid PCM/PMMA composite film incorporated smart phone was increased 286% over the reference, respectively.